• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.313-313
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• 2006

In this study, we describe a new double layered nanoporous membrane suitable for virus filtration. One layer is an 80 nm thick film having cylindrical pores with diameters of 15 nm and a narrow pore size distribution. This layer is prepared by using a thin film of the mixture of a block copolymer and a homopolymer, and mainly acts to separate viruses. The support layer (${\sim}150\;microns\;thick$) is a conventional micro-filtration membrane with a broad pore size distribution. This asymmetric membrane showed very high selectivity and flux for the separation of human rhinovirus type 14 (HRV 14) which has a diameter of ${\sim}30\;nm$ and is a major pathogen of the common cold in humans.

• Journal of the Korean Ceramic Society
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• v.52 no.5
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• pp.338-343
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• 2015

To prevent an interfacial reaction between the anode and the electrolyte layer during the conventional high-temperature co-firing process, an anode-supported type cell with a thin-film electrolyte was fabricated by low-temperature ceramic thick film coating process. Ni-GDC cermet composite was used as the anode material and YSZ was used as the electrolyte material. Open circuit voltage and maximum power density were found to strongly depend on the surface uniformity of the anode functional layer. By optimizing the microstructure of the anode functional layer, the open circuit voltage and maximum powder density of the cell increased to 1.11 V and $1.35W/cm^2$, respectively, at $750^{\circ}C$. When a GDC barrier layer was applied between the YSZ electrolyte and the LSCF cathode, the cell showed good stability, with almost no degradation up to 100 h. Anode-supported type SOFCs with high performance and good stability were fabricated using a coating process.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.6
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• pp.260-262
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• 2005

Thickness optimization of heavily doped p-type seeding layer was studied to improve performance of thin film silicon solar cell. We used liquid phase epitaxy (LPE) to grow active layer of $25{\mu}m$ thickness on $p^+$ seeding layer. The cells with $p^+$ seeding layer of $10{\mu}m\;to\;50{\mu}m$ thickness were fabricated. The highest efficiency of a cell is 12.95%, with $V_{oc}=633mV,\;J_{sc}=26.5mA/cm^2$, FF = 77.15%. The $p^+$ seeding layer of the cell is $20{\mu}m$ thick. As thicker seeding layer than $20{\mu}m$, the performance of the cell was degraded. The results demonstrate that the part of the recombination current is due to the heavily doped seeding layer. Thickness of heavily doped p-type seeding layer was optimized to $20{\mu}m$. The performance of solar cell is expected to improve with the incorporation of light trapping as texturing and AR coating.

• 한국신재생에너지학회:학술대회논문집
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• 2005.06a
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• pp.168-171
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• 2005

Thickness optimization of heavily doped p-type seeding layer was studied to improve performance of thin film silicon solar cell. We used liquid phase epitaxy (LPE) to grow active layer of $25{\MU}m$ thickness on p+ seeding layer. The cells with p+ seeding layer of $10{\mu}m\;to\;50{\mu}m$ thickness were fabricated. The highest efficiency of a cell is $12.95\%$, with Voc=633mV, $Jsc=26.5mA/cm^2,\;FF=77.15\%$. The $P^+$ seeding layer of the cell is $20{\mu}m$, thick. As thicker seeding layer than $20{\mu}m$, the performance of the cell was degraded. The results demonstrate that the part of the recombination current is due to the heavily doped seeding layer. Thickness of heavily doped p-type seeding layer was optimized to $20{\mu}m$. The performance of solar cell is expected to improve with the incorporation of light trapping as texturing and AR coating.

• Nuclear Engineering and Technology
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• v.52 no.4
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• pp.734-741
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• 2020

A new air-cooled waste heat removal system with a direct contact heat exchanger was designed for SMRs requiring 200 MW of waste heat removal. Conventional air-cooled systems use fin structure causing high thermal resistance; therefore, a large cooling tower is required. The new design replaces the fin structure with a vertical string type direct contact heat exchanger which has the most effective performance among tested heat exchangers in a previous study. The design results showed that the new system requires a cooling tower 50% smaller than that of the conventional system. However, droplet formation on a falling film along a string caused by Rayleigh-Plateau instability decreases heat removal performance of the new system. Analysis of Rayleigh-Plateau instability considering drag force on the falling film surface was developed. The analysis results showed that the instability can be prevented by providing thick string. The instability is prevented when the string radius exceeds the capillary length of liquid by a factor of 0.257 under stagnant air and 0.260 under 5 m/s air velocity.

• Korean Journal of Materials Research
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• v.18 no.5
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• pp.272-276
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• 2008

In submicron MOSFET devices, maintaining the ratio between the channel length (L) and the channel depth (D) at 3 : 1 or larger is known to be critical in preventing deleterious short-channel effects. In this study, n-type SOI-MOSFETs with a channel length of $0.1\;{\mu}m$ and a Si film thickness (channel depth) of $0.033\;{\mu}m$ (L : D = 3 : 1) were virtually fabricated using a TSUPREM-4 process simulator. To form functioning transistors on the very thin Si film, a protective layer of $0.08\;{\mu}m$-thick surface oxide was deposited prior to the source/drain ion implantation so as to dampen the speed of the incoming As ions. The p-type boron doping concentration of the Si film, in which the device channel is formed, was used as the key variable in the process simulation. The finished devices were electrically tested with a Medici device simulator. The result showed that, for a given channel doping concentration of $1.9{\sim}2.5\;{\times}\;10^{18}\;cm^{-3}$, the threshold voltage was $0.5{\sim}0.7\;V$, and the subthreshold swing was $70{\sim}80\;mV/dec$. These value ranges are all fairly reasonable and should form a 'magic region' in which SOI-MOSFETs run optimally.

• Transactions of the Society of Information Storage Systems
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• v.7 no.1
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• pp.25-30
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• 2011

In the last couple of years, the flexible optical disk(FOD) system that consists of a thin polycarbonate(PC) film of 95 ${\mu}m$ thick, a rigid stabilizer, and a high speed spindle motor has been spot-lighted as the next-generation optical system for archival use of digital data. The air film between the rotating disk and stabilizer provides a means for damping out the lateral disk vibrations. However, its damping-capability drops significantly as the rotational speed of the disk exceeds a specific limit and, eventually, the disk vibration propagates inward causing the whole span of the disk exhibits large vibration amplitudes. Based on the numerical simulations as well as the experimental results, the present work aims to evaluate the damping coefficient of the air-film near the outer region of the disk where the capillary type orifices are applied to the edge of the curved stabilizer.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2001.11a
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• pp.172-175
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• 2001

A novel microstrip type low-pass filter using thin or thick film resistors is proposed to efficiently eliminate harmonic spurious response in stop-band. The proposed low-pass filter shows the spurious suppression enhancement of 20 dB over a conventional one. The designed low-pass filter could be used as a harmonic rejection filter of a local oscillator for Ku-band satellite payload system.

• Journal of Sensor Science and Technology
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• v.9 no.6
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• pp.430-439
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• 2000

$In_2O_3$-based thin film sensor with 500-600 nm thick was fabricated for the detection of CO gas by rf magnetron sputtering. In order to improve both sensitivity to CO gas and selectivity to hydrogen gas containing -CH, ultra-thin transition metal Co catalyst was sputtered over $In_2O_3$ thin film and annealed at $500^{\circ}C$. Sensitivity to CO was maximum at the thickness of Co 2.1 nm and $300^{\circ}C$, and that to $C_3H_8$ was at the thickness of Co 1.4 nm and $350-400^{\circ}C$. From the x-ray photoelectron spectroscopy (XPS) result, ultra-thin Co was existed into CoO covered with $Co_2O_3$ on $In_2O_3$ particles, and thus p-n junction of $In_2O_3(n-type)$-CoO(p-type) was thought to be formed. In this p-n junction type sensors, sensing mechanism with reducing gases can be explained by the variation of depletion layer thickness formed in the interface.

• Korean Journal of Materials Research
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• v.13 no.5
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• pp.279-284
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• 2003

The $CoSi_2$ process is widely employed in a salicide as well as an ohmic layer process. In this experiment, we investigated the characteristics of $CoSi_2$ films by combinations of I-type (TiN 100$\AA$/Co 150$\AA$), II-type(TiN 100$\AA$/Co 150$\AA$/Ti 50$\AA$), III-type(Ti 100$\AA$/Co 150$\AA$/Ti 50$\AA$), and IV-type(Ti 100$\AA$/Co 150$\AA$/Ti 100$\AA$). Sheet resistances of $CoSi_2$ show the lowest resistance with 2.9 $\Omega$/sq. in a TiN/Co condition and much higher resistances in conditions simultaneously applying Ti capping layers and Ti interlayers. Though we couldn't observe a $CoSi_2$roughness dependence on the film stacks from RMS values, Ti capping layers turned into 78∼94$\AA$ thick TiN layers of (200) preferred orientation at $N_2$ambient. In addition, Ti interlayers helped to form the epitaxial $CoSi_2$with (200) preferred orientation and ternary compounds of Co-Ti-Si. We propose that film structures of II-type and III-type may be appropriate in the salicide process and the ohmic layer process from the viewpoint of Co diffusion kinetics and the CoSi$_2$epitaxy.