• 부식과 방식
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• 제12권1호
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• pp.1-11
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• 2013

Alloy 600 재료의 PWSCC의 개념을 소개하고 그 발생과 전파에 미치는 미세조직, 온도, 응력, 수화학 환경등의 주요인자를 정리하였다. ◯ PWSCC란 니켈 기지 합금인 Alloy 600와 그 용접재인 Alloy 82/182 재료가 원자로 1차수 환경에서 보이는 응력부식균열을 의미한다. ◯ Alloy 600의 PWSCC에 미치는 주요 인자에는 재료의 미세조직, 응력, 온도, 환경등이 있으며 그 중에서 재료의 미세조직이 가장 지배적인 인자이다. ◯ 재료내의 탄화물은 탄소 함량과 열처리 조건에 따라 달리 형성되며 입계를 따라 준연속적으로 잘 발달된 입계탄화물을 가지는 재료가 PWSCC에 저항성을 가진다. ◯ 손상속도는 부가 응력의 네 제곱에 비례하여 증가하는 것으로 알려져 있다. ◯ PWSCC는 Arrhenius 관계의 열활성화 과정(thermally activated process)이다. ◯ 용존수소량에 따라 재료의 부식전위가 정해지는데 전극전위가 Ni/NiO 평형전위 부근에서 가장 큰 균열 성장 민감도를 보인다는 데는 연구자들 사이에 이견이 없다. 그러나 균열의 개시에 대한 용존수소량의 영향에 대해서는 이견이 있다.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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• pp.154-155
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• 2006

This study investigated a mechanism for controlling the shape of Cu nanocrystals fabricated using the polyol process, which considers the thermodynamic transition from a facetted surface to a rough surface and the growth mechanisms of nanocrystals with facetted or rough surfaces. The facetted surfaces were stable at relatively low temperatures due to the low entropy of perfectly facetted surfaces. Nanocrystals fabricated using a coordinative surfactant stabilized the facetted surface at a higher temperature than those fabricated using a non-coordinative surfactant. The growth rate of the surface under a given driving force was dependent on the surface structure, i.e., facetted or rough, and the growth of a facetted surface was a thermally activated process. Surface twins decreased the activation energy for growth of the facetted surface and resulted in rod- or wire-shaped nanocrystals

• Journal of Photoscience
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• 제9권2호
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• pp.130-133
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• 2002

The last step in the photocycle of photoactive yellow protein (PYP) is a spontaneous recovery of the dark state from the active state in which the p-coumaric acid chromophore is thermally isomerized, concomitantly with the deprotona- tion of the chtomophore and the refolding of the protein moicty. For the purpose of understanding the mechanism of the thermal back-isomerization, we have investigated the rate-determining step by analyzing mutant PYPs of Met100, which was previously shown to play a major role in facilitating the reaction (1). The mutation to Lys, Leu, Ala, or Glu decelerated the dark state recovery by 1 to 3 three orders of magnitude. By evaluating temperature-dependence and pH-dependence of the kinetics of the dark state recovery, it was found that the retardation by mutations resulted from elevation of the activation enthalpy ( H$\^$┿/) and that the pKa of the chromophore, which was affected by the mutation, is in a linier correlation with the amplitude of the rate constants. It was, therefore, deduced from the correlation that the free energy for crossing the activated state in the dark recovery process is proportional to the free energy for the deprotonation of the chromophore, identifying the rate-determining step as the deprotonation of the chromophore. (1) Devanathan, S. Genick, U. K. Canestrelli, I. L. Meyer, T. E. Cusanovich, M. A. Getzoff, E. D. Tollin, G., Biochemistry 1998, 37, 11563 - 11568

• 전기화학회지
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• 제3권3호
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• pp.162-168
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• 2000

전기주석도금용 PSA(Phenolsulfonic Acid Bath)계 전기주석 도금액은 장기간 사용하면 노화되어 도금 전류밀도 범위 축소 및 표면특성 열화현상이 일어나게 된다. 본 연구에서는 도금액 노화 현상의 원인을 축적된 phenolsulfonate농도 증가의 관점에서 조사하였다. 동전위와 정전위 분극실험 결과에서는, phenolsulfonate축적농도 증가에 따른 도금액의 노화 정도가 증가함에 따라 음극분극 초기에 나타나는 한계전류밀도가 점차 낮아지는 현상이 나타났다. Sodium phenolsulfonate를 첨가하여 phenolsulfonate끼 농도만을 조절한 도금액에서도 노화된 도금액과 거의 비슷한 분극 특성이 나타남으로써 도금액 노화의 원인이 축적된 phenolsulfonate임을 간접적으로 확인할 수 있었다. 또한 도금액의 온도가 증가할수록 한계전류밀도가 뚜렷하게 나타나지 않고 도금액 노화에 따른 영향이 적어져서 도금액의 노화는 물질이동과 같은 thermally-activated process의 제약에 의한 것이며, phenolsulfonate가 축적되면서 주석 이온의 mobility를 감소시키고, 따라서 정상적인 도금 반응이 억제되는 것으로 판단된다.

• 한국재료학회지
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• 제19권12호
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• pp.644-648
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• 2009

Temperature dependency of resistivity of the carbon black-polyethylene composites below and above percolation threshold is studied based on the electrical conduction mechanism. Temperature coefficient of resistance of the composites below percolation threshold changed from minus to plus, increasing volume fraction of carbon black; this trend decreased with increasing volume fraction of carbon black. The temperature dependence of resistivity of the composites below percolation threshold can be explained with a tunneling conduction model by incorporating the effect of thermal expansion of the composites into a tunneling gap. Temperature coefficient of resistance of the composites above percolation threshold was positive and its absolute value increased with increasing volume fraction of carbon black. By assuming that the electrical conduction through percolating paths is a thermally activated process and by incorporating the effect of thermal expansion into the volume fraction of carbon black, the temperature dependency of the resistivity above percolation threshold has been well explained without violating the universal law of conductivity. The apparent activation energy is estimated to be 0.14 eV.

• 대한토목학회논문집
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• 제43권5호
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• pp.555-566
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• 2023

본 연구에서는 콘크리트 부재에 저온 적용을 위해 SOL-GEL 기법을 이용하여 제조된 열에너지 저장 복합상변화물질(CPCM)를 개발하였다. 코어는 테트라데칸, 지지재는 활성탄(AC)을 각각 사용하였다. 진공 함침법을 이용하여 AC의 다공성 구조에 테트라데칸 상변화 물질(PCM)을 함침시키고, 테트라에틸오르토실리케이트(TEOS)를 사용한 SOL-GEL 공정을 이용하여 제조된 복합체에 실리카 겔을 얇게 코팅하였다. CPCM의 열 성능은 시차주사열량계(DSC)과 열 중량분석(TGA)을 통해 분석했다. DSC 결과 테트라데칸 PCM은 용융 및 동결 온도가 각각 6.4℃ 및 1.3℃이고 해당 엔탈피는 각각 226J/g 및 223.8J/g인 것으로 나타났다. CPCM은 7.1℃ 및 2.4℃에서 용융 및 동결 과정에서 각각 32.98J/g 및 27.7J/g의 엔탈피를 나타내었다. TGA 시험 결과 AC는 500℃까지 열적으로 안정하며, 이는 120℃ 정도인 순수 테트라데칸의 분해 온도보다 훨씬 높은 것으로 나타났다. 또한, AC-PCM과 CPCM의 경우 각각 80℃와 100℃에서 열분해가 시작되었다. CPCM의 화학적 정성 분석을 위해 푸리에 변환 적외선(FT-IR) 분광법을 이용하였으며, 그 결과 개발된 복합체가 화학적으로 안정함을 확인하였다. 마지막으로, SOL-GEL 공정 후 AC 표면에 실리카 겔의 얇은 층이 존재함을 확인하기 위해 주사전자현미경(SEM)을 이용하여 AC와 CPCM의 표면 형태를 분석하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제3권3호
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• pp.132-138
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• 2003

We investigated the polarization retention characteristics of ferroelectric capacitors with $Pb(Zr,Ti)O_3$ (PZT) thin films which were fabricated by different deposition methods. In thermally-accelerated retention tests, PZT films which were prepared by a chemical solution deposition (CSD) method showed rapid decay of retained polarization charges as the thickness of the films decreased down to 100 nm, while the films which were grown by metal organic chemical vapor deposition (MOCVD) retained relatively large non-volatile charges at the corresponding thickness. We concluded that in the CSD-grown films, the thicker interfacial passive layer compared with the MOCVD-grown films had an unfavorable effect on retention behavior. We observed the existence of such interfacial layers by extrapolation of the total capacitance with thickness of the films and the capacitance of these layers was larger in MOCVD-grown films than in CSD-grown films. Due to incomplete compensation of surface polarization charges by the free charges in the metal electrodes, the interfacial field activated the space charges inside the interfacial layers and deposited them at the boundary between the ferroelectric layer and the interfacial layer. Such space charges built up an internal field inside the films, which interfered with domain wall motion, so that retention property at last became degraded. We observed less imprint which was a result of less internal field in MOCVD-grown films while large imprint was observed in CSD-grown films.

• 대한금속재료학회지
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• 제50권9호
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• pp.677-684
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• 2012

A feasible way to fabricate in-situ Al/TiC composites was investigated. An elemental mixture of $Al-TiO_2-C$ pellet was directly added into an Al melt at $800-920^{\circ}C$ to form TiC by self-combustion reaction. The addition of CuO initiates the self-combustion reaction to form TiC in $1-2{\mu}m$ at the melt temperature above $850^{\circ}C$. Besides the CuO addition, a diluent element of excess Al plays a significant role in the TiC formation by forming a precursor phase, $Al_3Ti$. Processing parameters such as CuO content, the amount of excess Al and the melt temperature, have affected the combustion reaction and formation of TiC, and their influences on the microstructures of in-situ Al/TiC composites are examined.

• Transactions on Electrical and Electronic Materials
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• 제1권1호
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• pp.26-31
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• 2000

The ~1540 nm $^4$ $I_{13}$ 2/ longrightarro $w^4$ $I_{15}$ 2/ emissions of E $r^{3+}$ in Er-implanted GaN annealed at temperatures in the 400 to 100$0^{\circ}C$ range were investigated to gain a better understanding of the formation and dissociation processes of the various E $r^{3+}$ sites and the recovery of damage caused by the implantation with increasing annealing temperature ( $T_{A}$).The monotonic increase in the intensity of the broad defect photoluminescence(PL) bands with incresing $T_{A}$ proves that these are stable radiative recombination centers introduced by the implantation and annealing process. Theser centers cannot be attributed to implantation-induced damage that is removed by post-implantation annealing. Selective wavelength pumpling of PL spectra at 6K reveals the existence of at least nine different E $r^{3+}$ sites in this Er-implanted semiconductor. Most pf these E $r^{3+}$ PL centers are attributed to complexed of Er atoms with defects and impurities which are thermally activated at different $T_{A}$. Only one of the nine observed E $r^{3+}$ PL centers can be pumped by direct 4f absorption and this indicates that it is highest concentration E $r^{3+}$ center and it represents most of the optically active E $r^{3+}$ in the implanted sample. The fact that this E $r^{3+}$ center cannot be strongly pumped by above-gap light or broad band below-gap absorption indicates that it is an isolated center, i.e not complexed with defects or impurities, The 4f-pumped P: spectrum appears at annealing temperatures as low as 40$0^{\circ}C$, and although its intensity increase monotonically with increasing $T_{A}$ the wavelengths and linewidths of its characteristic peaks asre unaltered. The observation of this high quality E $r_{3+}$PL spectrum at low annealing temperatures illustrates that the crystalline structure of GaN is not rendered amorphous by the ion implantation. The increase of the PL intensities of the various E $R_{3+}$sites with increasing $T_{A}$is due to the removal of competing nonradiative channels with annealing. with annealing.annealing.