• 제목/요약/키워드: Thermal-structure Stability

검색결과 650건 처리시간 0.031초

오엘이디의 단열 소자분리 구조를 위한 이미지 라버셜 감광제 (Image Reversal Photoresist for the Single Isolation Structure of OLEDs)

  • 이승준;신윤수;채결여;임대우;최경희
    • 한국광학회:학술대회논문집
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    • 한국광학회 2009년도 동계학술발표회 논문집
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    • pp.541-542
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    • 2009
  • We have developed an image reversal photoresist with high thermal stability and electric insulating properties for the single isolation structure of OLEDs. The thermal stability and electric insulating properties are investigated and compared with those of conventional insulator and cathode separator materials. The single isolation structure using the image reversal photoresist reduces the fabrication process steps and cuts down the manufacturing cost.

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Thermal Stability Study of $Eu^{2+}-doped$ $BaAl_2Si_2O_8$ Phosphor using Polymorphism for Plasma Display Panel applications

  • Im, Won-Bin;Kim, Yong-Il;Jeon, Duk-Young
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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    • pp.1568-1571
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    • 2005
  • We have evaluated thermal stability of a $BaAl_2Si_2O_8:Eu^{2+}$ $(BAS:Eu^{2+})$, which have polymorph property such as hexagonal, monoclinic structure depending upon firing temperature. When both polymorph $BAS:Eu^{2+}$ were baked in air at 500 $^{\circ}C$ for 30 min, the photoluminescence (PL) intensity of $monoclinic-BAS:Eu^{2+}$ was maintained of the initial intensity. However, the PL intensity of $hexagonal-BAS:Eu^{2+}$ decreased significantly, corresponding to about 34 %. From analyses of Rietveld refinement, the difference of thermal stability of both $BAS:Eu^{2+}$ can be ascribed to both crystal structure of host materials and the average interatomic distances between $Eu^{2+}$ ion and oxygen their crystal structure which plays a key role of shield for Eu2+ ions against oxidation atmosphere.

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Computational thermal stability and critical temperature buckling of nanosystem

  • Chengda Zhang;Haifeng Hu;Qiang Ma;Ning Wang
    • Advances in nano research
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    • 제14권6호
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    • pp.575-590
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    • 2023
  • Many of small-scale devices should be designed to tolerate high temperature changes. In the present study, the states of buckling and stability of nano-scale cylindrical shell structure integrated with piezoelectric layer under various thermal and electrical external loadings are scrutinized. In this regard, a multi-layer composite shell reinforced with graphene nano-platelets (GNP) having different patterns of layer configurations is modeled. An outer layer of piezoelectric material receiving external voltage is also attached to the cylindrical shell for the aim of observing the effects of voltage on the thermal buckling condition. The cylindrical shell is mathematically modeled with first-order shear deformation theory (FSDT). Linear elasticity relationship with constant thermal expansion coefficient is used to extract the relationship between stress and strain components. Moreover, minimum virtual work, including the work of the piezoelectric layer, is engaged to derive equations of motion. The derived equations are solved using numerical method to find out the effects of temperature and external voltage on the buckling stability of the shell structure. It is revealed that the boundary condition, external voltage and geometrical parameter of the shell structure have notable effects on the temperature rise required for initiating instability in the cylindrical shell structure.

Study of thermal stability of Ni Silicide using Ni-V Alloy

  • Zhong, Zhun;Oh, Soon-Young;Kim, Yong-Jin;Lee, Won-Jae;Zhang, Ying-Ying;Jung, Soon-Yen;Li, Shi-Guang;Kim, Yeong-Cheol;Wang, Jin-Suk;Lee, Hi-Deok
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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    • pp.16-17
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    • 2006
  • In this paper, Ni-V alloy was studied with different structures and thickness. In case of Ni-V and Ni-V/Co/TiN, low resistive Ni silicide was formed after one step RTP (Rapid Thermal Process) with temperature range from $400^{\circ}C$ to $600^{\circ}C$ for 30sec in vacuum. After furnace annealing with temperatures range from $550^{\circ}C$ to $650^{\circ}C$ for 30min in nitrogen ambient, Ni-V single structure shows the best thermal stability compare with the other ones. To enhance the thermal stability up to 650oC and find the optimal thickness of Ni silicide, different thickness of Ni-V was studied in this work. Stable sheet resistance was obtained through Ni-V single structure with optimal Ni-V thickness.

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양이온 개시제를 이용한 열경화성 액정 에폭시의 열분해 활성화에너지 (Thermal Decomposition Activation Energy of Liquid Crystalline Epoxy using Cationic Initiator)

  • 정예지;현하늘;조승현
    • Composites Research
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    • 제34권3호
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    • pp.180-185
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    • 2021
  • 기존 아민계 경화제를 사용해 액정 에폭시를 경화할 경우, 랜덤 한 3차원 네트워크 구조의 생성으로 인해 phonon의 산란이 많이 발생하기 때문에 열전도도가 낮게 나타났다. 이러한 문제를 mesogen그룹을 적층된 구조로 형성하는 양이온 개시제를 이용하여 해결하기 위해 본 연구에서는 아민계 경화제와 양이온 개시제를 사용한 에폭시의 TGA분석(Thermogravimetric Analysis)을 통해 등온 열분해 활성화에너지를 조사하여 열적안정성을 비교하였다. 양이온 개시제를 이용한 에폭시의 경우 활성화가 에너지가 높았으며 기존 실험과 비교했을 때, 열적안정성은 열전도도와 비슷한 양상을 보인다.

PET 나노복합재료의 제조 및 특성분석 (The preparation and characterization of poly(ethylene terephthalate)(PET)/layered silicate nanocomposite)

  • 천상욱;손세범;곽승엽
    • 한국복합재료학회:학술대회논문집
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    • 한국복합재료학회 2003년도 추계학술발표대회 논문집
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    • pp.21-24
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    • 2003
  • In general, to enhance physical properties of PET-layered silicate nanocomposites $(P_{et}LSNs)$, it has been well known that the organic modifiers should introduce into gallery regions. However, the organic modifiers in$(P_{et}LSNs)$ may result in thermal decomposition by melt processing at high temperature, and it necessarily lead to deteriorate various physical properties of final products. Therefore, in this study, $(P_{et}LSNs)$ excluding and including organic modifiers were prepared by solution method $(S-P_{et}LSNs_{eom} and S-P_{et}LSNs_{iom})$ and we (focused on the effects of the organic modifiers in $P_{et}$ LSNs with exfoliation structure on the crystallization behaviors, the optical transparency, the thermal stability and the mechanical property. The absence and existence of organic modifiers in $S-P_{et}LSNs_{eom} and S-P_{et}LSNs_{iom}$ were investigated by EA and TGA, and nano-structure of silicate layers in $S-P_{et}LSNs$ was evaluated by using WXRD, SAXS and TEM. $S-P_{et}LSNs_{eom} and S-P_{et}LSNs_{iom}$ were mixed with neat PET as masterbatches by melt method $(M-P_{et}LSNs_{eom} and M-P_{et}LSNs_{iom})$, and also neat PET was mixed with organically modified layered silicates (OLS) by conventional direct melt method $(D-P_{et}LSNs) at 270^{\circ}C$. As results, it was found that $M-P_{et}LSNs_{eom}, M-P_{et}LSNs_{iom}, and D-P_{et}LSN$ showed a exfoliated structure and exhibited faster crystallization rate, better thermal stability and mechanical property than those of neat PET due to the dispersed and detaminated silicate layers in PET matrix. Whereas, considering organic modifiers effect, $M-P_{et}LSNs_{eom} and D-P_{et}LSN$ exhibited slower crystallization rate, poorer optical, thermal and mechanical properties, in comparison to $M-P_{et}LSNs_{eom}> due to the thermal decomposition of organic modifier in $D-P_{et}LSNs$ during melt method.

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Strain-induced enhancement of thermal stability of Ag metallization with Ni/Ag multi-layer structure

  • 손준호;송양희;김범준;이종람
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.157-157
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    • 2010
  • Vertical-structure light-emitting diodes (V-LEDs) by laser lift-off (LLO) have been exploited for high-efficiency GaN-based LEDs of solid-state lightings. In V-LEDs, emitted light from active regions is reflected-up from reflective ohmic contacts on p-GaN. Therefore, silver (Ag) is very suitable for reflective contacts due to its high reflectance (>95%) and surface plasmon coupling to visible light emissions. In addition, low contact resistivity has been obtained from Ag-based ohmic contacts annealed in oxygen ambient. However, annealing in oxygen ambient causes Ag to be oxidized and/or agglomerated, leading to degradation in both electrical and optical properties. Therefore, preventing Ag from oxidation and/or agglomeration is a key aspect for high-performance V-LEDs. In this work, we demonstrate the enhanced thermal stability of Ag-based Ohmic contact to p-GaN by reducing the thermal compressive stress. The thermal compressive stress due to the large difference in CTE between GaN ($5.6{\times}10^{-6}/^{\circ}C$) and Ag ($18.9{\times}10^{-6}/^{\circ}C$) accelerate the diffusion of Ag atoms, leading to Ag agglomeration. Therefore, by increasing the additional residual tensile stress in Ag film, the thermal compressive stress could be reduced, resulting in the enhancement of Ag agglomeration resistance. We employ the thin Ni layer in Ag film to form Ni/Ag mutli-layer structure, because the lattice constant of NiO ($4.176\;{\AA}$ is larger than that of Ag ($4.086\;{\AA}$). High-resolution symmetric and asymmetric X-ray diffraction was used to measure the in-plane strain of Ag films. Due to the expansion of lattice constant by oxidation of Ni into NiO layer, Ag layer in Ni/Ag multi-layer structure was tensilely strained after annealing. Based on experimental results, it could be concluded that the reduction of thermal compressive stress by additional tensile stress in Ag film plays a critical role to enhance the thermal stability of Ag-based Ohmic contact to p-GaN.

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Deintercalation and Thermal Stability of Na-graphite Intercalation Compounds

  • Oh, Won-Chun
    • Carbon letters
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    • 제2권1호
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    • pp.22-26
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    • 2001
  • Na alloyed graphite intercalation compounds with stage 1 and 2 were synthesized using the high temperature and pressure technique. Thermal stability and staging transitions of the compounds were investigated depending on heating rates. The thermal stability and temperature dependence of the deintercalation compounds were characterized using differential scanning calorimeter (DSC) analyzer. Enthalpy of formations were confirmed at temperatures between 25 and $500^{\circ}C$, depending on the various heating rates. The structure ions and interlayer spaces of the graphite were identified by X-ray diffraction (XRD). Diffractograms of stages with non-integral (00l) values were obtained in the thermal decomposition process, and stacking disorder defects and random stage modes were observed. The average value of the interlayer C-C bond lengths were found approximately $2.12{\AA}$ and $1.23{\AA}$ from the diffractions. Based on the stage transition, the degree of the deintercalaton has a inverse-linear relationship against the heating rate.

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Study of Thermal Stability of Ni Silicide using Ni-V Alloy

  • Zhong, Zhun;Oh, Soon-Young;Lee, Won-Jae;Zhang, Ying-Ying;Jung, Soon-Yen;Li, Shi-Guang;Lee, Ga-Won;Wang, Jin-Suk;Lee, Hi-Deok;Kim, Yeong-Cheol
    • Transactions on Electrical and Electronic Materials
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    • 제9권2호
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    • pp.47-51
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    • 2008
  • In this paper, thermal stability of Nickel silicide formed on p-type silicon wafer using Ni-V alloy film was studied. As compared with pure Ni, Ni-V shows better thermal stability. The addition of Vanadium suppresses the phase transition of NiSi to $NiSi_2$ effectively. Ni-V single structure shows the best thermal stability compared with the other Ni-silicide using TiN and Co/TiN capping layers. To enhance the thermal stability up to $650^{\circ}C$ and find out the optimal thickness of Ni silicide, different thickness of Ni-V was also investigated in this work.

Epoxy-siloxane IPN의 열적 안정성에 미치는 후기경화의 영향 (Effects of Post-curing on Thermal Stability of Epoxy-sioxane IPN Structure)

  • 조영신;심미자;김상욱
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1999년도 추계학술대회 논문집 학회본부 C
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    • pp.944-946
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    • 1999
  • The thermal stability of the post cured epoxy-polysiloxane IPN structure was observed by using DSC and TGA. As the post curing time increased the glass transition temperature increased and the secondary exothermic peak disappeared. The thermally decomposing activation energy calculated by using Kissinger expression was 225.6 kJ/mol. The thermal stability of the grafted IPN of epoxy and silicon compound depends on the composing ratio and post curing conditions of time and temperature.

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