• Journal of Pharmaceutical Investigation
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• v.27 no.2
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• pp.119-123
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• 1997

The physicochemical and structural properties of new capsaicin derivative, DA-5018, were examined. The reference standard of this compound was obtained by the recrystallization. A method for the determination of the dissociation constant of the compound is described. pH-solubility and distribution coefficient were determined by chromatographic method. Fundamental properties on thermal behaviors were investigated by TG, DTA and DSC. Structural analysis based on spectroscopic method coincided with the chemical structure of DA-5018. Approximate dissociation constant of the compound determined by UV spectral method was 9.35. Solubilities and partition coefficients in various pH buffer solution appeared pH-dependency. No crystal transition or further transition was found in the thermal analysis. This compound showed good stability, but pH 13 buffer and acetone made some degradative products.

• Korean Journal of Materials Research
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• v.25 no.3
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• pp.138-143
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• 2015

Aluminum nitride, a compound semiconductor, has a Wurtzite structure; good material properties such as high thermal conductivity, great electric conductivity, high dielectric breakdown strength, a wide energy band gap (6.2eV), a fast elastic wave speed; and excellent in thermal and chemical stability. Furthermore, the thermal expansion coefficient of the aluminum nitride is similar to those of Si and GaAs. Due to these characteristics, aluminum nitride can be applied to electric packaging components, dielectric materials, SAW (surface acoustic wave) devices, and photoelectric devices. In this study, we surveyed the crystallization and preferred orientation of AlN thin films with an X-ray diffractometer. To fabricate the AlN thin film, we used the magnetron sputtering method with $N_2$, NH3 and Ar. According to an increase in the partial pressures of $N_2$ and $NH_3$, Al was nitrified and deposited onto a substrate in a molecular form. When AlN was fabricated with $N_2$, it showed a c-axis orientation and tended toward a high orientation with an increase in the temperature. On the other hand, when AlN was fabricated with $NH_3$, it showed a-axis orientation. This result is coincident with the proposed mechanism. We fabricated AlN thin films with an a-axis orientation by controlling the sputtering electric power, $NH_3$ pressure, deposition speed, and substrate temperature. According to the proposed mechanism, we also fabricated AlN thin films which demonstrated high a-axis and c-axis orientations.

• Journal of the Korean Electrochemical Society
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• v.22 no.4
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• pp.172-176
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• 2019

The first commercialized cathode material, $LiCoO_2$, suffers from disadvantages such as high cost and toxicity and also possesses safety problems. The nickel-rich $LiNi_{0.9}Mn_{0.1}O_2$ cathode material, used as an alternative to $LiCoO_2$, has highly reversible capacity and high energy density. So, the nickel-rich $LiNi_{0.9}Mn_{0.1}O_2$ cathode material is widely used as an alternative to $LiCoO_2$ due to its highly reversible capacity and high energy density. However, $LiNi_{0.9}Mn_{0.1}O_2$ has several disadvantages as well, such as poor cycle performance and poor thermal instability. To address these problems, we synthesized a new material, $LiNi_{0.5}Mn_{0.5}O_2$, as a shell on the surface of a core to suppress the surface degradation. The new material showed high structural and thermal stabilities and could also maintain a high capacity. The capacity retention of the core-shell cathode (87.7%) was better than that of the core cathode (76.9%) after 50 cycles. Analysis using differential scanning calorimetry revealed that the heat generation in the core-shell cathode ($65.9Jg^{-1}$) was lower than that in the core cathode ($559.7Jg^{-1}$).

• Polymer(Korea)
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• v.34 no.4
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• pp.326-332
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• 2010

Nanocomposite films were prepared by blending poly(amic acid)(PAA), poly(o-hydroxyamide)( PHA) and organically modified montmorillonite (OMMT) that has a layered structure. XRD, SEM and TEM were used to study the morphology of PAA/PHA nanocomposites, and DMA, TGA, UTM, LOI and PCFC techniques were used to characterize the mechanical and thermal properties, and flame retardancy of the nanocomposites. TEM images revealed that OMMT layers were well dispersed in the PAA/PHA matrix and showed exfoliation and intercalation behavior. The addition of 3 wt% OMMT to the PAA/PHA blend increased the initial modulus of PAA/ PHA blend to 3.68 GPa that was ca. 48% higher than that of the control PAA/PHA blend. Above 4 wt%, however, both the initial modulus and the tensile strength were found to decrease, which might be due to the aggregation of OMMT in PAA/PHA matrix. When the OMMT content was below 3 wt%, the thermal stability and flame retardancy of the PAA/PHA nanocomposites increased with increasing OMMT content.

• Journal of Korea Foundry Society
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• v.33 no.5
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• pp.215-225
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• 2013

The alloys required for fossil power plants are altered from stainless steel that has been used below $600^{\circ}C$ to Ni-based alloys that can operate at $700^{\circ}C$ for Hyper Super Critical (HSC) steam turbine. The IN740 alloy (Special Metals Co. USA) is proposed for improved rupture strength and corrosion resistance at high temperature. However, previous studies with experiments and simulations on stable phases at about $700^{\circ}C$ indicated the formation of the eta phase with the wasting of a gamma prime phase, which is the most important reinforced phase in precipitation hardened Ni alloys, and this resulted in the formation of precipitation free zones to decrease the strength. On the basis of thermodynamic calculation, the new Ni-based superalloy named LESS 1 (Low Eta Sigma Superalloy) was designed in this study to improve the strengthening effect and structure stability by depressing the formation of topologically close packed phases, especially sigma and eta phases at high temperature. A thermal exposure test was carried out to determine the microstructure stability of LESS 1 in comparison with IN740 at $800^{\circ}C$ for 300 hrs. The experimental results show that a needle-shaped eta phase was formed in the grin boundary and it grew to intragrain, and a precipitation free zone was also observed in IN740, but these defects were entirely controlled in LESS 1.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.199-199
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• 2011

Recently, Thin film transistors (TFTs) with amorphous oxide semiconductors (AOSs) can offer an important aspect for next generation displays with high mobility. Several oxide semiconductor such as ZnO, $SnO_2$ and InGaZnO have been extensively researched. Especially, as a well-known binary metal oxide, tin oxide ($SnO_2$), usually acts as n-type semiconductor with a wide band gap of 3.6eV. Over the past several decades intensive research activities have been conducted on $SnO_2$ in the bulk, thin film and nanostructure forms due to its interesting electrical properties making it a promising material for applications in solar cells, flat panel displays, and light emitting devices. But, its application to the active channel of TFTs have been limited due to the difficulties in controlling the electron density and n-type of operation with depletion mode. In this study, we fabricated staggered bottom-gate structure $SnO_2$-TFTs and patterned channel layer used a shadow mask. Then we compare to the performance intrinsic $SnO_2$-TFTs and doping hafnium $SnO_2$-TFTs. As a result, we suggest that can be control the defect formation of $SnO_2$-TFTs by doping hafnium. The hafnium element into the $SnO_2$ thin-films maybe acts to control the carrier concentration by suppressing carrier generation via oxygen vacancy formation. Furthermore, it can be also control the mobility. And bias stability of $SnO_2$-TFTs is improvement using doping hafnium. Enhancement of device stability was attributed to the reduced defect in channel layer or interface. In order to verify this effect, we employed to measure activation energy that can be explained by the thermal activation process of the subthreshold drain current.

• Analytical Science and Technology
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• v.10 no.3
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• pp.209-215
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• 1997

Li-AGICs as a anode of secondary battery were synthesized by high-pressure method as a function of the Li-contents. The characteristics of these prepared compounds were determined from the studies with X-ray diffraction method, UV/VIS spectrophotometric and differential scanning calorimeter(DSC) analysis. From the results of X-ray diffraction, it was found that the lower stage intercalation compounds were formed with increase of Li-contents. The mixed stages in these compounds were also observed. In the case of the $Li_{30wt%}$-AGIC, the compounds in the stage 1 structure were formed predominantly, but the structure of only pure stage 1 for structural defect of artificial graphite is not observed. According to UV/VIS spectrophotometric analysis, $Li_{30wt%}$-AGIC shows distinguishable energy state spectrum with the position of $R(%)_{min}$ values, but the characteristic spectra of almost all Li-AGICs are not observed. The enthalpy and entropy changes of the compounds can be obtained from the differential scanning calorimetric analysis results. From the results, it was found that exothermic and endothermic reactions of Li-AGICs are related to thermal stability of lithium between artificial graphite layers.

• Transactions of the Korean hydrogen and new energy society
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• v.33 no.3
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• pp.209-218
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• 2022

Recently, research on the development of anion exchange membranes (AEMs) has received considerable attention from the scientific community around the world. Here, we fabricated a series of AEMs with branched structures with different alkyl spacers and conducted comparative evaluations. The introduction of these branched structures is an attempt to overcome the low ionic conductivity and stability problems that AEMs are currently facing. To this end, branched polymers with different spacer lengths were synthesized and properties of each membrane prepared according to the branched structure were compared. The chemical structure of the polymer was investigated by proton nuclear magnetic resonance, Fourier transform infrared, and gel permeation chromatography, and the thermal properties were investigated using thermogravimetric analysis. The branched anion exchange membrane with (CH₂)₃ and (CH₂)₆ spacers exhibited ionic conductivities of 8.9 mS cm^-1 and 22 mS cm^-1 at 90℃, respectively. This means that the length of the spacer affects the ionic conductivity. Therefore, this study showing the effect of the spacer length on the ionic conductivity of the membrane in the polymer structure constituting the ion exchange membrane is judged to be very useful for future application studies of AEM fuel cells.

• Journal of the Korean Electrochemical Society
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• v.1 no.1
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• pp.1-7
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• 1998

For the purpose of finding new cathode materials for medium-temperature $(700\~800^{\circ}C)$ solid oxide fuel cells, $Gd_{0.8}Ca_{0.2}Co_{1-x}Fe_xO_3,\;(x=0.0\~0.5)$ are prepared, and their thermal stability and conductivity characteristics are investigated. Also, the cathodic activities are measured after the cathode layer being attached on CGO (cerium-gadolinium oxide) electrolyte disk. The X-ray analyses indicate that the materials prepared by calcining the citrate-gels at $800^{\circ}C$ have the orthorhombic perovskite structure without discernible impurities. The thermal stability of the undoped Co perovskite is so poor that it is decomposed to the individual binary oxide even at $1300^{\circ}C$. But the partially Fe-doped cobaltates exhibit a better thermal stability to retain their structural integrity up to $1400^{\circ}C$. The observation whereby both the undoped and Fe-doped cobaltates melt at ca. $1300^{\circ}C$ leads us to perform the electrode adhesion at <$1300^{\circ}C$. The cathodic activity of $Gd_{0.8}Ca_{0.2}Co_{1-x}Fe_xO_3,\;(x=0.0\~0.5)$, electrodes is superior to $La_{0.9}Sr_{0.1}MnO_3$, among the samples of $x=0.0\~0.5$, the x=0.2 cathode shows the best activity for the oxygen reduction reaction. It is likely that the Fe-doping provides a better thermal stability to the materials but in turn imparts an inferior cathodic activity, such that the optimum trade-off is made at x=0.2 between the two factors. The total electrical conductivity and ion conductivity of $Gd_{0.8}Ca_{0.2}Co_{1-x}Fe_xO_3$, are measured to be 51 S/cm and $6.0\times10^{-4}S/cm\;at\;800^{\circ}C$, respectively. The conductivity values illustrate that the materials are a mixed conductor and the reaction sites can be expanded to the overall electrode surface, thereby providing a better cathodic activity than $La_{0.9}Sr_{0.1}MnO_3$.

• Korean Journal of Materials Research
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• v.3 no.5
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• pp.443-450
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• 1993

Self-alignment gatc Schottky contact structure on Si- implanted GaAs was formed by plasma enhanced chemical vapor dcposirion. Tungsten nitride thin films (ahclut 1600$\AA$) \vcre dopositcd on GaAs at $350^{\circ}C$ in order to fahricarc GaAs 1Cs and ttwn rapidly annealed at $750^{\circ}C$ to $900^{\circ}C$. Thermal charac tcristics of PECVD)-$W_{67}N_{43}$/GaAs structure were investigated by X-ray diffraction, photolumintesccnce. and optical deep level transient specrroscopy. Results revealed that $W_{67}N_{33}$ gate was more thermally sta ble with GaAs substrate than W gate and Si atoms implanted In $W_{67}N_{33}$/GaAs structure became morr active than those In W/GaAs after annealing. I-V characteristics of $W_{67}N_{33}$/GaAs diod c exhibired a nearly ideal diode behavior. The termal stability of $W_{67}N_{33}$/GaAs diode was better than that of W/GaAs diode with the post annealing at temperatures from 800 to $900^{\circ}C$ for 20s without As overpressure.