• 한국전기전자재료학회논문지
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• 제28권8호
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• pp.490-495
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• 2015

This paper was proposed the theoretical research and optimal design 3,000 V IGBT for using electrical automotive, high speed train and first power conversion. To obtaining 3,000 V breakdown voltage, the design parameters was showed $160{\Omega}{\cdot}cm$ resistivity and $430{\mu}m$ drift length. And to maintain 5 V threshold voltage, we obtained $6.5{\times}10^{13}cm^{-2}$ p-base dose. We confirmed $24{\mu}m$ cell pitch for maintain optimal on state voltage drop and thermal characteristics. This 3,000 V IGBT was replaced to thyristor devices using first power conversion and high speed train, presently.

• 전기의세계
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• 제23권6호
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• pp.49-55
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• 1974

Amorphous semiconductor from As 30 Te 48 Ge 10 Si 12 was prepared, and studied electron microscopy, X-ray analysis and resistivity measurement. It's resistivity is 1.56*10$^{6}$ .ohm.-cm when small ampule is used for preparing sample it is found that no phase separation has occurced by electron microscopy, and that phase transition temperature is 232.deg. C by differential Thermal Analysis. The specimen showed threshold switching that the low resistance state occur at critical electric field and the resistance recover at low applied field. Critical electric field of the switching is 10$^{5}$ V/cm at room temperature. Threshold voltage secreace exponentially with increasing ambient temperature and at that each voltage resistance of the switching device increase exponentially. According to the series resistance and applied vottage current slope on the V-I curve is varied. When applied voltage is decreased after switching, the resistance of the switching device is increased. By this result the origin of the switching is the Joule's heating.

• 전자공학회논문지A
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• 제28A권9호
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• pp.736-742
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• 1991

N$^{+}$poly gate NMOSFETs and p$^{+}$ poly gate (surface type) PMOSFETs with three different gate oxides(SiO2, NO, and ONO) were fabricated. The rapid thermal nitridation and reoxidation techniques have been applied to gate oxide formation. The current drivability of the ONO NMOSFET shows larger values than that of the SiO2 NMOSFET. The snap-back occurs at a lower drain voltage for SiO$_2$ cases for ONO NMOSFET. Under the maximum substrate current bias conditions, hot-carrier effects inducting threshold voltage shift and transconductance degradation were investigated. The results indicate that ONO films exhibit less degradation in terms of threshold voltage shift. It was confirmed that the ONO samples achieve good improvement of hot-carrier immunity. In a SiO$_2$ SC-PMOSFET, with significant boron penetration, it becomes a depletion type (normally-on). But ONO films show excellent impurity barrier properties to boron penetration from the gate.

• 한국전기전자재료학회논문지
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• 제27권10호
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• pp.648-652
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• 2014

We have investigated the effect of electrical properties of amorphous InGaZnO thin film transistors (a-IGZO TFTs) by post thermal annealing in $O_2$ ambient. The post-annealed in $O_2$ ambient a-IGZOTFT is found to be more stable to be used for oxide-based TFT devices, and has better performance, such as the on/off current ratios, sub-threshold voltage gate swing, and, as well as reasonable threshold voltage, than others do. The interface trap density is controlled to achieve the optimum value of TFT transfer and output characteristics. The device performance is significantly affected by adjusting the annealing condition. This effect is closely related with the modulation annealing method by reducing the localized trapping carriers and defect centers at the interface or in the channel layer.

• 약학회지
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• 제43권2호
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• pp.263-273
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• 1999

When glutamate was infected intrathecally, the result is similar to those produced by TPA injected. The involvement of protein kinase C (PKC) in the nociceptive responses in rat dorsal horn neurons of lumbar spinal cord was studied. In test with formalin, a PKC inhibitor (chelerythrine) inhibited dose-dependently the formalin-induced behavior response. Neomycin also inhibited it significantly. But, a PKC activator (12-O-tetradecanoylphorbol-13-ester, TPA) showed reverse effect. When gluatamate was injected intrathecally, we observed the result is smilar to those produced by TPA injection. On the other hand, intrathecal injection of glutamate induced thermal and mechanical hyperalgesia. In Tail-flick test, we examined the involvement of PKC on the glutamate-indeced thermal hyperalgesia. Chelerythrine showed an inhibitory effect and TPA enhanced thermal response. Glutamate decreased the mechanical threshold significantly. A pretreatment of chelerythrine and neomycin inhibited glutamate-induced mechanical hyperalgesia, but the effect of neomycin was not significant. TPA had little effect on the mechanical nociceptive response. These results suggest that the PKC activation through metabotropic receptor at postsynaptic region of spinal cord dorsal horn neurons may influence on the persistent nociception produced by chemical stimulation with formalin, thermal and mechanical hyperalgesia induced by glutamate.

• Geomechanics and Engineering
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• 제16권5호
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• pp.483-493
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• 2018

Experimental study of the deterioration of high-temperature rock subjected to rapid cooling is essential for thermal engineering applications. To evaluate the influence of thermal shock on heated granite with different temperatures, laboratory tests were conducted to record the changes in the physical properties of granite specimens and the dynamic mechanical characteristics of granite after rapid cooling were experimentally investigated by using a split Hopkinson pressure bar (SHPB). The results indicate that there are threshold temperatures ($500-600^{\circ}C$) for variations in density, porosity, and P-wave velocity of granite with increasing treatment temperature. The stress-strain curves of $500-1000^{\circ}C$ show the brittle-plastic transition of tested granite specimens. It was also found that in the temperature range of $200-400^{\circ}C$, the through-cracks induced by rapid cooling have a decisive influence on the failure pattern of rock specimens under dynamic load. Moreover, the increase of crack density due to higher treatment temperature will result in the dilution of thermal shock effect for the rocks at temperatures above $500^{\circ}C$. Eventually, a fitting formula was established to relate the dynamic peak strength of pretreated granite to the crack density, which is the exponential function.

• 항공우주시스템공학회지
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• 제17권4호
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• pp.18-27
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• 2023

본 논문에서는 열해석의 하중조건으로 레이저 열원을 설정하여 반사경의 구조-열-광학 성능 분석을 수행하였다. 레이저 열원 모델은 가우시안 빔을 바탕으로 반투명한 소재를 고려한 Beer-Lambert 법칙을 적용하여 하중조건으로 선정하였으며, 반사경만의 성능 분석을 위하여 기구부는 고려하지 않았다. 열변형해석을 수행하여 반사경 표면의 온도 변화로 인한 열응력과 열변형 데이터를 얻었다. 열변형에 의한 반사경 표면의 변위 데이터를 Zernike 다항식에 피팅하여 파면오차를 계산하였으며, 이를 통해 고에너지 레이저가 반사경으로 입사될 때 반사경의 광학 성능을 예측할 수 있었다.

• Journal of Information Display
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• 제4권2호
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• pp.1-6
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• 2003

In this paper, we demonstrate that the organic electrophosphorescent device is driven by the organic thin film transistor with spin-coated photoacryl gate insulator. It was found that electrical output characteristics in our organic thin film transistors using the staggered-inverted top-contact structure showed the non-saturated slope in the saturation region and the sub-threshold nonlinearity in the triode region, where we obtained the maximum power luminance that was about 90 $cd/m^2$. Field effect mobility, threshold voltage, and on-off current ratio in 0.45 ${\mu}m$ thick gate dielectric layer were 0.17 $cm^2/Vs$, -7 V, and $10^6$ , respectively. In order to form polyimide as a gate insulator, vapor deposition polymerization process was also introduced instead of spin-coating process, where polyimide film was co-deposited by high-vacuum thermal evaporation from 4,4'-oxydiphthalic anhydride (ODPA) and 4,4'-oxydianiline (ODA) and cured at 150${\sqsubset}$for 1hr. It was also found that field effect mobility, threshold voltage, on-off current ratio, and sub-threshold slope with 0.45 ${\mu}m$ thick gate dielectric films were 0.134 $cm^2/Vs$, -7 V, and $10^6$ A/A, and 1 V/decade, respectively.

• 한국세라믹학회지
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• 제15권3호
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• pp.135-139
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• 1978

Sintering oxide which was prepared by sintering at $1200^{\circ}C$ the mixture of ${\gamma}$-$Fe_2O_3$ and $Sb_2O_3$ in 2 : 1 mol ratio, showed 1st electrical switching and stable 2nd switching when D.C. voltage was applied. This electrical switching mechanism was known to be thermal mechanism from dependence of environmental temperature of threshold Voltage(Vm), Current(Im) and the conductivity of the current filament of the sintering oxide.

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 2002년도 추계학술대회 논문집
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• pp.117-122
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• 2002

Electrical discharge machining uses thermal energy from electrical discharge, while wire electrical discharge machining (WEDM) technology is widely used in conductive material machining. This paper proposes a method for evaluating the characteristics of wires in WEDM. In order to evaluate the wire processing performance, processing speed and roughness, straightness, corner processing have been assessed with precision experiment equipment and image processing including Laplacian filtering with various threshold levels.