• Transactions of the Korean Society of Automotive Engineers
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• v.24 no.3
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• pp.285-293
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• 2016

The high velocity oxygen fuel(HVOF) thermal spray is a kind of surface modification techniques to produce the sprayed coating layer. This process is to form the coating layer after spraying the powder to molten or semi-molten state by the ultra-high speed at the high-temperature heat source and conflicting with a substrate. The efficiency of thermal spraying is dropped, however, because the semi-molten powder in a spray process become a factor that degrades the mechanical property by the formed pore within the coating layer. Therefore, it is necessary to melt completely the thermal spray powder in order to produce the coating layer with an optimal adhesive force. In this study, to improve the wear resistance, corrosion resistance and heat resistance, the plungers of high-speed and ultra-high pressure reciprocating hydraulic pumps used in ironworks are manufactured with STS $420J_2$ and are coated by the powders of WC-Co-Cr and WC-Cr-Ni including the WC of high hardness using a HVOF thermal sprayer developed in this laboratory. These are called by the surface-modified plungers. The surface roughness, hardness, and surface and cross-sectional microstructure of these two surface-modified and conventional ceramic plungers are measured and compared before operation with after operation for 100 days. It is found that the values of centerline average surface roughness and maximum height for conventional ceramic plunger are 9.5 to 10.8 and 5.2 to 5.7 times higher than those of surface-modified ones coated by WC-Co-Cr and WC-Cr-Ni because the fine tops and bottoms on surface roughness curve of conventional ceramic plunger are approximately 100 times higher than those of surface-modified ones. In addition, the pores and scratches in the surface microstructure are considerably formed in the order of conventional ceramic, WC-Cr-Ni and WC-Co-Cr surface-modified plungers. The greater the WC content of high hardness powder is less the change in the plunger surface.

• Journal of the Semiconductor & Display Technology
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• v.6 no.3
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• pp.19-23
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• 2007

The NiSi is very promising candidate for the metallization in 45 nm CMOS process such as FUSI(fully silicided) gate and source/drain contact because it exhibits non-size dependent resistance, low silicon consumption and mid-gap workfunction. Ni film was first deposited by using ALD (atomic layer deposition) technique with Bis-Ni precursor and $H_2$ reactant gas at $220^{\circ}C$ with deposition rate of $1.25\;{\AA}/cycle$. The as-deposited Ni film exhibited a sheet resistance of $5\;{\Omega}/{\square}$. RTP (repaid thermal process) was then performed by varying temperature from $400^{\circ}C$ to $900^{\circ}C$ in $N_2$ ambient for the formation of NiSi. The process temperature window for the formation of low-resistance NiSi was estimated from $600^{\circ}C$ to $800^{\circ}C$ and from $700^{\circ}C$ to $800^{\circ}C$ with and without Ti capping layer. The respective sheet resistance of the films was changed to $2.5\;{\Omega}/{\square}$ and $3\;{\Omega}/{\square}$ after silicidation. This is because Ti capping layer increases reaction between Ni and Si and suppresses the oxidation and impurity incorporation into Ni film during silicidation process. The NiSi films were treated by additional thermal stress in a resistively heated furnace for test of thermal stability, showing that the film heat-treated at $800^{\circ}C$ was more stable than that at $700^{\circ}C$ due to better crystallinity.

• Transactions on Electrical and Electronic Materials
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• v.18 no.5
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• pp.253-256
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• 2017

A thin Te interlayer was applied to a Ni/n-InGaAs contact to reduce the contact resistance between Ni-InGaAs and n-InGaAs. A 5-nm-thick Te layer was first deposited on a Si-doped n-type $In_{0.53}Ga_{0.47}As$ layer, followed by in situ deposition of a 30-nm-thick Ni film. After the formation of the Ni-InGaAs alloy by rapid thermal annealing at $300^{\circ}C$ for 30 s, the extracted specific contact resistivity (${\rho}_c$) reduced by more than one order of magnitude from $2.86{\times}10^{-4}{\Omega}{\cdot}cm^2$ to $8.98{\times}10^{-6}{\Omega}{\cdot}cm^2$ than that of the reference sample. A thinner Ni-InGaAs alloy layer with a better morphology was obtained by the introduction of the Te layer. The improved interface morphology and the graded Ni-InGaAs layer formed at the interface were believed to be responsible for ${\rho}_c$ reduction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.406-409
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• 2002

The primary insulation system used in an oil-filled transformer is Kraft paper, wood, porcelain and, of course, oil. Modern transformers use paper that is chemically treated to improve its tensile strength properties and resistance to aging caused by immersion in oil. These insulation papers are mainly aged to thermal stress. Over the course of the insulation paper and oil's life it is exposed to high temperatures, oxygen and water. Its interaction with the steel of the tank and core plus the copper and aluminium of the windings will eventually cause the chemical properties of the oil to decay. High temperature have an effect on mechanical strength of cellulous paper using the layer insulation. We made two aging cell in which thermal aging tests of insulation papers and mineral oil are conducted. It is measured dielectric strength, number of acid, moisture, etc. of insulation paper and oil aged in the aging cells.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.11 no.4
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• pp.448-456
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• 1999

Variations of thickness and effective thermal conductivity of frost forming on the horizontal] cylinder with respect to time were measured under cross flow. The local heat flux around the cylinder was determined by measuring the radial temperature distribution in the cylinder having small holes drilled axially in which T-type thermocouples were inserted, then by using one dimensional cylindrical heat conduction equation. The thickness and the surface temperature of the frost layer around the cylinder were measured periodically while developing the frost. Each experiment was peformed by varying the Reynolds number, the temperature, and the humidity condition. Specially the dew point temperature of the most cases was below the freezing point. Experimental data showed that the frost layers on the front and the rear surface were thicker than those on the top and the bottom one which was near the separation point. The thickness and effective thermal conductivity of the frost layer were affected by inlet air velocity, temperature, and humidity. Moreover, the effective thermal conductivity and the effective thermal resistance increase with respect to time.

• Corrosion Science and Technology
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• v.22 no.2
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• pp.108-114
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• 2023

In this study, anti-corrosion effect was investigated through various electrochemical experiments after applying Al thermal spraying technology to AA5083-H321. Open circuit potential and anodic polarization curves were analyzed through electrochemical experiments in natural seawater. The shape of the surface was observed using a scanning electron microscope (SEM) and a 3D microscope before and after the experiment. Component and crystal structure were analyzed through EDS and XRD. As a result, the surface roughness of AA5083-H321 and the Al thermal sprayed coating layer increased due to surface damage caused by anodic dissolution reaction during the anodic polarization experiment. The corrosion rate of AA5083-H321 was relatively low because the Al thermal spray coating layer contained structural defects such as pores and crevices. Nevertheless, the open circuit potential of the Al thermal spray coating layer in natural seawater was measured about 0.2 V lower than that of AA5083-H321. Thus, a sacrificial anode protection effect can be expected.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.10-10
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• 2008

Silicide is inevitable for CMOSFETs to reduce RC delay by reducing the sheet resistance of gate and source/drain regions. Ni-silicide is a promising material which can be used for the 65nm CMOS technologies. Ni-silicide was proposed in order to make up for the weak points of Co-silicide and Ti-silicide, such as the high consumption of silicon and the line width limitation. Low resistivity NiSi can be formed at low temperature ($\sim500^{\circ}C$) with only one-step heat treat. Ni silicide also has less dependence of sheet resistance on line width and less consumption of silicon because of low resistivity NiSi phase. However, the low thermal stability of the Ni-silicide is a major problem for the post process implementation, such as metalization or ILD(inter layer dielectric) process, that is, it is crucial to prevent both the agglomeration of mono-silicide and its transformation into $NiSi_2$. To solve the thermal immune problem of Ni-silicide, various studies, such as capping layer and inter layer, have been worked. In this paper, the Ni-silicide utilizing Pd stacked layer (Pd/Ni/TiN) was studied for highly thermal immune nano-scale CMOSFETs technology. The proposed structure was compared with NiITiN structure and showed much better thermal stability than Ni/TiN.

• Korean Journal of Optics and Photonics
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• v.30 no.5
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• pp.193-196
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• 2019

The design and control of thermal flow is important for the operation of high-power laser diodes (LDs). It is necessary to analyze and improve the thermal bottleneck near the active layer of an LD. As the error in prediction of the thermal resistance of an LD is large, typically due to the hyperbolic increase and saturation to linear increase of the thermal resistance as a function of thickness, it is helpful to use a simple, modified divergence model for the improvement and optimization of thermal resistance. The characteristics of LDs are described quite well, in that the values for simulated thermal resistance curves and the thermal cross section followed are almost the same as the values from the model function. Also, the thermal-cross-section curve obtained by differentiating the thermal resistance is good for identifying thermal bottlenecks intuitively, and is also fitted quite well by the model proposed for both a typical LD structure and an improved LD with thin capping and high thermal conductivity.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.292-292
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• 2014

Wide band gap semiconductors, such as III-nitrides (GaN, AlN, InN, and their alloys), SiC, and diamond are expected to play an important role in the next-generation electronic devices. Specifically, GaN-based high electron mobility transistors (HEMTs) have been targeted for high power, high frequency, and high temperature operation electronic devices for mobile communication systems, radars, and power electronics because of their high critical breakdown fields, high saturation velocities, and high thermal conductivities. For the stable operation, high power, high frequency and high breakdown voltage and high current density, the fabrication methods have to be optimized with considerable attention. In this study, low ohmic contact resistance and smooth surface morphology to AlGaN/GaN on 2 inch c-plane sapphire substrate has been obtained with stepwise annealing at three different temperatures. The metallization was performed under deposition of a composite metal layer of Ti/Al/Ni/Au with thickness. After multi-layer metal stacking, rapid thermal annealing (RTA) process was applied with stepwise annealing temperature program profile. As results, we obtained a minimum specific contact resistance of $1.6{\times}10^{-7}{\Omega}cm2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.456-456
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• 2009

Boron doping on an n-type Si wafer is requisite process for IBC (Interdigitated Back Contact) solar cells. Fiber laser annealing is one of boron doping methods. For the boron doping, uniformly coated or deposited film is highly required. Plasma enhanced chemical vapor deposition (PECVD) method provides a uniform dopant film or layer which can facilitate doping. Because amorphous silicon layer absorption range for the wavelength of fiber laser does not match well for the direct annealing. In this study, to enhance thermal affection on the existing p-a-Si:H layer, a ${\mu}c$-Si:H intrinsic layer was deposited on the p-a-Si:H layer additionally by PECVD. To improve heat transfer rate to the amorphous silicon layer, and as heating both sides and protecting boron eliminating from the amorphous silicon layer. For p-a-Si:H layer with the ratio of $SiH_4$ : $B_2H_6$ : $H_2$ = 30 : 30 : 120, at $200^{\circ}C$, 50 W, 0.2 Torr for 30 minutes, and for ${\mu}c$-Si:H intrinsic layer, $SiH_4$ : $H_2$ = 10 : 300, at $200^{\circ}C$, 30 W, 0.5 Torr for 60 minutes, 2 cm $\times$ 2 cm size wafers were used. In consequence of comparing the results of lifetime measurement and sheet resistance relation, the laser condition set of 20 ~ 27 % of power, 150 ~ 160 kHz, 20 ~ 50 mm/s of marking speed, and $10\;{\sim}\;50 {\mu}m$ spacing with continuous wave mode of scanner lens showed the correlation between lifetime and sheet resistance as $100\;{\Omega}/sq$ and $11.8\;{\mu}s$ vs. $17\;{\Omega}/sq$ and $8.2\;{\mu}s$. Comparing to the singly deposited p-a-Si:H layer case, the additional ${\mu}c$-Si:H layer for doping resulted in no trade-offs, but showed slight improvement of both lifetime and sheet resistance, however sheet resistance might be confined by the additional intrinsic layer. This might come from the ineffective crystallization of amorphous silicon layer. For the additional layer case, lifetime and sheet resistance were measured as $84.8\;{\Omega}/sq$ and $11.09\;{\mu}s$ vs. $79.8\;{\Omega}/sq$ and $11.93\;{\mu}s$. The co-existence of $n^+$layeronthesamesurfaceandeliminating the laser damage should be taken into account for an IBC solar cell structure. Heavily doped uniform boron layer by fiber laser brings not only basic and essential conditions for the beginning step of IBC solar cell fabrication processes, but also the controllable doping concentration and depth that can be established according to the deposition conditions of layers.