Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Reduction of Contact Resistance Between Ni-InGaAs Alloy and In0.53Ga0.47As Using Te Interlayer

  • Li, Meng (Department of Electronics Engineering, Chungnam National University) ;
  • Shin, Geon-Ho (Department of Electronics Engineering, Chungnam National University) ;
  • Lee, Hi-Deok (Department of Electronics Engineering, Chungnam National University) ;
  • Jun, Dong-Hwan (Technology Development Division, Korea Advanced Nano Fab Center) ;
  • Oh, Jungwoo (School of Integrated Technology, Yonsei Institute of Convergence Technology, Yonsei University)
  • Received : 2017.04.28
  • Accepted : 2017.07.11
  • Published : 2017.10.25
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Abstract

A thin Te interlayer was applied to a Ni/n-InGaAs contact to reduce the contact resistance between Ni-InGaAs and n-InGaAs. A 5-nm-thick Te layer was first deposited on a Si-doped n-type $In_{0.53}Ga_{0.47}As$ layer, followed by in situ deposition of a 30-nm-thick Ni film. After the formation of the Ni-InGaAs alloy by rapid thermal annealing at $300^{\circ}C$ for 30 s, the extracted specific contact resistivity (${\rho}_c$) reduced by more than one order of magnitude from $2.86{\times}10^{-4}{\Omega}{\cdot}cm^2$ to $8.98{\times}10^{-6}{\Omega}{\cdot}cm^2$ than that of the reference sample. A thinner Ni-InGaAs alloy layer with a better morphology was obtained by the introduction of the Te layer. The improved interface morphology and the graded Ni-InGaAs layer formed at the interface were believed to be responsible for ${\rho}_c$ reduction.

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References

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