• Title/Summary/Keyword: Thermal oxidation

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Thermal Emissivity of a Nuclear Graphite as a Function of Its Oxidation Degree (2) - Effect of Surface Structural Changes -

  • Seo, Seung-Kuk;Roh, Jae-Seung;Kim, Eung-Seon;Chi, Se-Hwan;Kim, Suk-Hwan;Lee, Sang-Woo
    • Carbon letters
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    • v.10 no.4
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    • pp.300-304
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    • 2009
  • Thermal emissivity of nuclear graphite was measured with its oxidation degree. Commercial nuclear graphites (IG-110, PECA, IG-430, and NBG-18) have been used as samples. Concave on graphites surface increased as its oxidation degree increased, and R value (Id/Ig) of the graphites decreased as the oxidation degree increased. The thermal emissivity increased depending on the decrease of the R (Id/Ig) value through Raman spectroscopy analysis. It was determined that the thermal emissivity was influenced by the crystallinity of the nuclear graphite.

The Effect of Oxide Formation on the Lifetime of Plasma Sprayed or EB-PVD Thermal Barrier Coatings (플라즈마 용사 및 EB-PVD에 의한 열벽코팅 수명에 대한 산화물 생성의 영향)

  • ;R.D.Sisson;Jr
    • Journal of the Korean institute of surface engineering
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    • v.27 no.2
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    • pp.91-98
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    • 1994
  • For the plasma sprayed as well as the EB-PVD thermal barrier coatings, the fracture paths within the oxidation products developed at the interface between the partially stabilized zirconia ceramic coating and NiCoCrAlY bond coat during cyclic thermal oxidation has been investigated. It was observed that the fracture in the oxidation products primarily took place within the oxide such as $Ni_{1-x}Co_3(Al_,Cr)_2O_4$ or at the interface between the oxide and $Al_2O_3$. It was found that Al2O3 developed first, followed by the Ni/Co/Cr rich oxides such as ,,$Ni_{1-x}Co_x(Al_,Cr)_2O_4$ $Cr_2O_3$and NiO at the interface between the ceramic coating and the bond coat in a cyclic high temperature environment. It was therfore concluded that the formation of the oxide containing Ni, Cr and Co was a life-limiting event for thermal barrier coatings during cyclic thermal oxidation.

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An Evaluation on High Temperature Oxidation Resistance of EB-PVD Thermal Barrier Coatings (전자빔 증착법에 의한 열차폐코팅의 고온 내산화성 평가)

  • Kim, Jong-H.;Jeong, Se-I.;Lee, Ku-H.;Lee, Eui-Y.
    • Journal of the Korean institute of surface engineering
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    • v.39 no.4
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    • pp.147-152
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    • 2006
  • Failure mechanisms of electron beam physical vapor deposited thermal barrier coatings(EB-PVD TBCs) that occur during thermal cyclic oxidation were investigated. The investigations include microstructural degradation of NiCrAIY bond coat, thermally grown oxides(TGOs) along the ceramic top coat-substrate interface and fracture path within TBCs. The microstructural degradation of the bond coat during cyclic oxidation created Al depleted zones, resulting in reduction of NiAl and ${\gamma}$-Ni solid solution phase. It was observed that the fracture took placed primarily within the TGOs or at the interfaces between TGOs and bond coat.

A Study on the Thermal Oxidation and Wettability of Lead-free Solders of Sn-Ag-Cu and Sn-Ag-Cu-In

  • Lee, Hyunbok;Cho, Sang Wan
    • Applied Science and Convergence Technology
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    • v.23 no.6
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    • pp.345-350
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    • 2014
  • The surface oxidation mechanism of lead-free solder alloys has been investigated with multiple reflow using X-ray photoelectron spectroscopy. It was found that the solder surface of Sn-Ag-Cu-In solder alloy is surrounded by a thin $InO_x$ layer after reflow process; this coating protects the metallic surface from thermal oxidation. Based on this result, we have performed a wetting balance test at various temperatures. The Sn-Ag-Cu-In solder alloy shows characteristics of both thermal oxidation and wetting balance better than those of Sn-Ag-Cu solder alloy. Therefore, Sn-Ag-Cu-In solder alloy is a good candidate to solve the two problems of easy oxidation and low wettability, which are the most critical problems of Pb-free solders.

N-type Silicon Solar Cell Based on Passivation Layer Grown by Rapid Thermal Oxidation (Rapid Thermal Oxidation 기반의 표면 보호막을 이용한 n-type 실리콘 태양전지의 제작과 전기적 특성 분석)

  • Ryu, Kyungsun;Kim, Sung-Jin
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.1
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    • pp.18-21
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    • 2013
  • $SiO_2$ layer grown by rapid thermal oxidation and $SiN_x$ layer were used for passivating the surface of n-type silicon solar cell, instead of only $SiN_x$ layer generally used in photovoltaic industry. The rapid thermal oxidation provides the reduction of processing time and avoids bulk life time degradation during the processing. Improvement of 30 mV in Voc and $2.7mA/cm^2$ in Jsc was obtained by applying these two layers. This improvement led to fabrication of a large area ($239cm^2$) n-type solar cell with 17.34% efficiency. Internal quantum efficiency measurement indicates that the improvement comes from the front side passivation, but not the rear side, by using $SiO_2/SiN_x$ stack.

Correlation Between the Porosity and the Thermal Emissivity as a Function of Oxidation Degrees on Nuclear Graphite IG-11 (원자로급 흑연 IG-11의 산화율에 따른 기공도와 열방사율과의 관계)

  • Seo, Seung-Kuk;Roh, Jae-Seung;Kim, Gyeong-Hwa;Chi, Se-Hwan;Kim, Eung-Seon
    • Korean Journal of Materials Research
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    • v.18 no.12
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    • pp.645-649
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    • 2008
  • Graphite for the nuclear reactor is used to the moderator, reflector and supporter in which fuel rod inside of nuclear reactor. Recently, there are many researches has been performed on the various characteristics of nuclear graphite, however most of them are restricted to the structural and the mechanical properties. Therefore we focused on the thermal property of nuclear graphite. This study investigated the thermal emissivity following the oxidation degree of nuclear graphite with IG-11 used as a sample. IG-11 was oxidized to 6% and 11% in air at 5 l/min at $600^{\circ}C$. The porosity and thermal emissivity of the sample were measured using a mercury porosimeter and by an IR method, respectively. The thermal emissivity of an oxidized sample was measured at $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$, $400^{\circ}C$ and $500^{\circ}C$. The porosity of the oxidized samples was found to increase as the oxidation degree increased. The thermal emissivity increased as the oxidation degree increased, and the thermal emissivity decreased as the measured temperature increased. It was confirmed that the thermal emissivity of oxidized IG-11 is correlated with the porosity of the sample.

The study on dielectric properties of $Ta_2O_5$ thin films obtained by thermal oxidation (Thermal Oxidation 법으로 제조된 $Ta_2O_5$ 박막의 유전체 물성에 관한 연구)

  • Kim, I.S.;Kim, H.J.;Min, B.K.;Song, J.S.
    • Proceedings of the KIEE Conference
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    • 2002.07c
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    • pp.1473-1475
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    • 2002
  • This study presents the dielectric properties of $Ta_2O_5$ MIM capacitor structure processed by thermal oxidation. The AES(auger electron emission) depth profile showed thermal oxidation effect gives rise to the $O_2$ deficiened into the new layer. The leakage current density respectively, at $1{\sim}3{\times}10^{-3}$(kV/cm) were $3{\times}10^{-4}-10^{-8}(A/cm^2)$. Leakage current density behavior is stable irrespective of applied electric field, the frequency va capacitance characteristic enhanced stability. The capacitance vs voltage measurement that, $V_{fb}$(flat-band voltage) was increase dependance on the thin films thickness, it is changed negative to positive.

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Effects of Clove Extracts on the Autoxidation and Thermal Oxidation of Soybean Oil (대두유의 자동산화 및 가열산화에 미치는 정향추출물의 항산화 효과)

  • 박상일;손종연
    • Korean journal of food and cookery science
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    • v.20 no.1
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    • pp.81-85
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    • 2004
  • This study was conducted to investigate the antioxidant activities of clove extracts in water, methanol and ether. The clove extracts, BHA and ${\alpha}$-tocopherol were added to each oil at a level of 200 ppm. The activities of the substrate oils and controls were tested under autoxidation and thermal oxidation conditions. The degree of the effects of the antioxidant activities under autoxidation condition were in the following order; ether extract 〉 methanol extract 〉BHA 〉 ${\alpha}$-tocopherol 〉 water extract = control group. The induction periods of the control, water, methanol and ether extracts, and BHA and ${\alpha}$-tocopherol were 9.5, 9.6, 10.7 11.8, 10.4 and 9.7 days, respectively. Under thermal oxidation condition, the methanol extract showed stronger antioxidant activity than those of the water and ether extracts. The antioxidant activity of the methanol extract was attributed to ${\alpha}$-tocopherol and BHA.

Large-Scale Synthesis of Cu2O Nanowires by Thermal Oxidation Method (열 산화법을 이용한 Cu2O 나노선의 대면적 합성)

  • Lee, Geun-Hyoung
    • Korean Journal of Materials Research
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    • v.24 no.7
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    • pp.388-392
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    • 2014
  • $Cu_2O$ nanowires were synthesized at large scale on copper plate by thermal oxidation in air. The effect of oxidation time and temperature on the morphology of the nanowires was examined. The oxidation time had no effect on the diameter of the nanowires, while it had a great effect on the density and the length of the nanowires. The density and the length of the nanowires increased, and then decreased, with increasing oxidation time. The oxidation temperature had a tremendous effect on the size-distribution as well as the density of the nanowires. When the oxidation temperature was $700^{\circ}C$, uniform size-distribution and high density of the nanowires was achieved. At lower and higher temperatures, the density of the nanowires was lower, and they displayed a broader size-distribution. It is suggested that the $Cu_2O$ nanowires were grown via a vapor-solid mechanism because no catalyst particles were observed at the tips of the nanowires.

The Oxidation Effect of Semiconductor Carbon Nanotube (반도체 탄소나노튜브의 산화열처리 효과)

  • Kim, Jwa-Yeon;Park, Kyung-Soon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.11a
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    • pp.126-127
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    • 2005
  • Semiconductor carbon nanotube was grown on oxided silicon wafer with Atmosphere Pressure Chemical Vapor Deposition (APCVD) ethmod and investigated the electrical property after thermal oxidation at 300$^{\circ}C$ in air. The electrical property was measured at room temperature in air after thermal oxidation at 300$^{\circ}C$ for various times in air. Semiconductor carbon nanotube was steadily changed to metallic carbon nanotube as increasing of thermal oxidation times at 300$^{\circ}C$ in air.

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