• Title/Summary/Keyword: Thermal interface material

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SiAlON Bulk Glasses and Their Role in Silicon Nitride Grain Boundaries: Composition-Structure-Property Relationships

  • Hampshire, Stuart;Pomeroy, Michael J.
    • Journal of the Korean Ceramic Society
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    • v.49 no.4
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    • pp.301-307
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    • 2012
  • SiAlON glasses are silicates or alumino-silicates, containing Mg, Ca, Y or rare earth (RE) ions as modifiers, in which nitrogen atoms substitute for oxygen atoms in the glass network. These glasses are found as intergranular films and at triple point junctions in silicon nitride ceramics and these grain boundary phases affect their fracture behaviour. This paper provides an overview of the preparation of M-SiAlON glasses and outlines the effects of composition on properties. As nitrogen substitutes for oxygen in SiAlON glasses, increases are observed in glass transition temperatures, viscosities, elastic moduli and microhardness. These property changes are compared with known effects of grain boundary glass chemistry in silicon nitride ceramics. Oxide sintering additives provide conditions for liquid phase sintering, reacting with surface silica on the $Si_3N_4$ particles and some of the nitride to form SiAlON liquid phases which on cooling remain as intergranular glasses. Thermal expansion mismatch between the grain boundary glass and the silicon nitride causes residual stresses in the material which can be determined from bulk SiAlON glass properties. The tensile residual stresses in the glass phase increase with increasing Y:Al ratio and this correlates with increasing fracture toughness as a result of easier debonding at the glass/${\beta}-Si_3N_4$ interface.

Effect of Interlayer Materials on Bending Strength and Reliability of Si$_3$N$_4$/S. S316 Joint (Si$_3$N$_4$/S. S316 접합에서 중간재가 접합강도 및 신회도에 미치는 영향)

  • 윤호욱;박상환;최성민;임연수;정윤중
    • Journal of the Korean Ceramic Society
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    • v.35 no.3
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    • pp.219-230
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    • 1998
  • Various interlayer materials have been tested for active metal(Cusil ABA) brazing of Si3N4/S. S316 joint. In general multilayer joint had higher strength(80-150 MPa) and better reliability than monolayered one. The joint with Cu(0.2)/Mo(0.3)/Cu(0.2mm) interlayer showed the highest bending strength of abou 490 MPa and the joint with Cu(0.2)/Mo(0.3mm) interlayer the best reliability (14.6 Weibull modulus). The stresses distributed in joint materials during 4-point bending test were estimated by CAE von Mises analysis; the estimated stresses were In good agreement with the measured data. In multilayer joint Cu was though to reduce the residual stresses induced by the difference in thermal expansion coefficient between the ceramic Mo and metal It apperared that a Cu/Mo was optimum interlayer material for Si3N4/S. S316 joint with high bending strength (420 MPa) and reliability. In addition the various shapes and types of compound were examined by EPMA in joining interface.

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Stepwise Ni-silicide Process for Parasitic Resistance Reduction for Silicon/metal Contact Junction

  • Choi, Hoon;Cho, Il-Whan;Hong, Sang-Jeen
    • Transactions on Electrical and Electronic Materials
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    • v.9 no.4
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    • pp.137-142
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    • 2008
  • The parasitic resistance is studied to silicon/metal contact junction for improving device performance and to lower contact/serial resistance silicide in natural sequence. In this paper constructs the stepwise Ni silicide process for parasitic resistance reduction for silicon/metal contact junction. We have investigated multi-step Ni silicide on SiGe substrate with stepwise annealing method as an alternative to compose more thermally reliable Ni silicide layer. Stepwise annealing for silicide formation is exposed to heating environment with $5^{\circ}C/sec$ for 10 seconds and a dwelling for both 10 and 30 seconds, and ramping-up and the dwelling was repeated until the final annealing temperature of $700\;^{\circ}C$ is achieved. Finally a direct comparison for single step and stepwise annealing process is obtained for 20 nm nickel silicide through stepwise annealing is $5.64\;{\Omega}/square$ at $600\;^{\circ}C$, and it is 42 % lower than that of as nickel sputtered. The proposed stepwise annealing for Ni silicidation can provide the least amount of NiSi at the interface of nickel silicide and silicon, and it provides lower resistance, higher thermal-stability, and superior morphology than other thermal treatment.

The Numerical Analysis for the Surface Crack Behavior in the Planar Solid Oxide Fuel Cell (평판형 고체산화물 연료전지 표면균열거동에 관한 수치해석)

  • Park, Cheol Jun;Kwon, Oh Heon;Kang, Ji Woong
    • Journal of the Korean Society of Safety
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    • v.33 no.5
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    • pp.1-8
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    • 2018
  • A fuel cell is an energy conversion device that converts a chemical energy directly into an electrical energy and has higher energy efficiency than an internal combustion engine, but solid oxide fuel cell (SOFC) consisting of brittle ceramic material remains as a major issue regarding the mechanical properties as the crack formation and propagation. In this study, the stress distribution and crack behavior around the crack tip were evaluated, due to investigated the effects of the surface crack at the operating condition of high temperature. As a result, the difference of the generated stress was insignificant at operating conditions of high temperature according to the surface crack length changes. This is because, the high stiffness interconnect has a closed structure to suppress cell deformation about thermal expansion. The stress intensity factor ratio $K_{II}/K_I$ increased as the crack depth increased, at that time the effect of $K_{II}$ is larger than that of $K_I$. Also the maximum stress intensity factor increased as the crack depth increased, but the location of crack was generated at the electrolyte/anode interface, not at the crack tip.

On-Line Condition Monitoring of Electrical Equipment Using Temperature Sensor (온도센서를 이용한 전력설비의 온라인 상태 감시)

  • Choi, Yong-Sung;Kim, Sun- Jae;Kim, Yeong-Min;Song, Hwao-Kee;Lee, Kyung-Sup
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.57 no.2
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    • pp.202-208
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    • 2008
  • Condition monitoring technologies allow achieving this goal by minimizing downtime through the integrated planning and scheduling of repairs indicated by condition monitoring techniques. Thermal runaways induced by conduction problems deteriorate insulating material and cause disruptive dielectric discharges resulting in arcing faults. Therefore, having the ability to directly measure the temperature of the contacts while in service will provide more information to determine the true condition of the equipment. It allows connective measures to be taken to prevent upcoming failure. Continuous temperature monitoring and event recording provides information on the energized equipment's response to normal and emergency conditions. On-line temperature monitoring helps to coordinate equipment specifications and ratings, determine the real limits of the monitored equipment and optimize facility operations. Using wireless technique eliminates any need for special cables and wires with lower installation costs if compared to other types of online condition monitoring equipment. In addition, wireless temperature monitoring works well under difficult conditions in strategically important locations. Wireless technology for on -line condition monitoring of energized equipment is applicable both as stand alone system and with an interface for power quality monitoring system. The paper presents the results of wireless temperature monitoring: of electrical equipment at a power plant.

Study of Chip-level Liquid Cooling for High-heat-flux Devices (고열유속 소자를 위한 칩 레벨 액체 냉각 연구)

  • Park, Manseok;Kim, Sungdong;Kim, Sarah Eunkyung
    • Journal of the Microelectronics and Packaging Society
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    • v.22 no.2
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    • pp.27-31
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    • 2015
  • Thermal management becomes a key technology as the power density of high performance and high density devices increases. Conventional heat sink or TIM methods will be limited to resolve thermal problems of next-generation IC devices. Recently, to increase heat flux through high powered IC devices liquid cooling system has been actively studied. In this study a chip-level liquid cooling system with TSV and microchannel was fabricated on Si wafer using DRIE process and analyzed the cooling characteristics. Three different TSV shapes were fabricated and the effect of TSV shapes was analyzed. The shape of liquid flowing through microchannel was observed by fluorescence microscope. The temperature differential of liquid cooling system was measured by IR microscope from RT to $300^{\circ}C$.

Effects of Wafer Cleaning and Heat Treatment in Glass/Silicon Wafer Direct Bonding (유리/실리콘 기판 직접 접합에서의 세정과 열처리 효과)

  • 민홍석;주영창;송오성
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.6
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    • pp.479-485
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    • 2002
  • We have investigated the effects of various wafers cleaning on glass/Si bonding using 4 inch Pyrex glass wafers and 4 inch silicon wafers. The various wafer cleaning methods were examined; SPM(sulfuric-peroxide mixture, $H_2SO_4:H_2O_2$ = 4 : 1, $120^{\circ}C$), RCA(company name, $NH_4OH:H_2O_2:H_2O$ = 1 : 1 : 5, $80^{\circ}C$), and combinations of those. The best room temperature bonding result was achieved when wafers were cleaned by SPM followed by RCA cleaning. The minimum increase in surface roughness measured by AFM(atomic force microscope) confirmed such results. During successive heat treatments, the bonding strength was improved with increased annealing temperatures up to $400^{\circ}C$, but debonding was observed at $450^{\circ}C$. The difference in thermal expansion coefficients between glass and Si wafer led debonding. When annealed at fixed temperatures(300 and $400^{\circ}C$), bonding strength was enhanced until 28 hours, but then decreased for further anneal. To find the cause of decrease in bonding strength in excessively long annealing time, the ion distribution at Si surface was investigated using SIMS(secondary ion mass spectrometry). tons such as sodium, which had been existed only in glass before annealing, were found at Si surface for long annealed samples. Decrease in bonding strength can be caused by the diffused sodium ions to pass the glass/si interface. Therefore, maximum bonding strength can be achieved when the cleaning procedure and the ion concentrations at interface are optimized in glass/Si wafer direct bonding.

Development of Large Superalloy Exhaust Valve Spindle by Dissimilar Inertia Welding Process (이종재료 마찰용접에 의한 초내열합금 대형 배기밸브 스핀들 개발)

  • Park Hee-Cheon;Jeong Ho-Seung;Cho Jong-Rac;Lee Nak-Kyu;Oh Jung-Seok;Han Mvoung-Seoup
    • Journal of Advanced Marine Engineering and Technology
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    • v.29 no.8
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    • pp.891-898
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    • 2005
  • Inertia welding is a solid-state welding process in which butt welds in materials are made in bar and in ring form at the joint race, and energy required lot welding is obtained from a rotating flywheel. The stored energy is converted to frictional heat at the interface under axial load. The quality of the welded joint depends on many parameters, including axial force, initial revolution speed and energy amount of upset. working time, and residual stresses in the joint. Inertia welding was conducted to make the large exhaust valve spindle for low speed marine diesel engine. superalloy Nimonic 80A for valve head of 540mm and high alloy SNCrW for valve stem of 115mm. Due to different material characteristics such as, thermal conductivity and flow stress. on the two sides of the weld interface, modeling is crucial in determining the optimal weld geometry and Parameters. FE simulation was performed by the commercial code DEFORM-2D. A good agreement between the Predicted and actual welded shape is observed. It is expected that modeling will significantly reduce the number of experimental trials needed to determine the weld parameters. especially for welds for which are very expensive materials or large shaft. Many kinds of tests, including macro and microstructure observation, chemical composition tensile , hardness and fatigue test , are conducted to evaluate the qualify of welded joints. Based on the results of the tests it can be concluded that the inertia welding joints of the superalloy exhaust valve spindle are better properties than the material specification of SNCrW.

Deposition $Ba_{1-x}Sr_xTiO_3$Thin Films and Electrical Properties with Various Materials Top Electrodes (강유전체$Ba_{1-x}Sr_xTiO_3$ 박막의 제조 및 상부전극재료에 따른 전기적 특성)

  • Park, Choon-Bae;Kim, Deok-Kyu;Jeon, Jang-Bae
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.48 no.6
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    • pp.410-415
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    • 1999
  • $Ba_{1-x}Sr_xTiO_3$ thin films with various ratio of Sr (X = 0.4, 0.5, 0.6) were grown $Pt/TiN/SiO_2/Si$ subastrate by RF magnetron sputtering deposition. As, Ag, and Cu films were deposited on $Ba_{1-x}Sr_xTiO_3$ thin films as top electrodes by using a thermal evaporator. The electrical properties of $Ba_{1-x}Sr_xTiO_3$ thin films for various compositions were characterized and the physical properties at interface between $Ba_{1-x}Sr_xTiO_3$ thin films and top electrodes were evaluated in terms of the work function difference. At x =0.5, the degradation of capacitance is lower to the other compositions. As negative biasapplied, the specimen with Cu top electrode has board saturation region and low leakage current since work function of Cu is bigger than other electrodes.$ Ba_{0.5}Sr_{0.5}TiO_3$ thin films with Cu top electrode, the dielectric constant was measured to the value of 354 at 1 kHz and the leakage current was obtained to the value of $5.26\times10^{-6}A/cm2$ at the forward bias of 2 V.

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Decomposition of Interfacial Crack Driving Forces in Dissimilar Joints

  • Kim, Yun-Jae;Lee, Hyung-Yil
    • Journal of Mechanical Science and Technology
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    • v.14 no.1
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    • pp.30-38
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    • 2000
  • This paper presents a framework how to estimate crack driving forces in terms of crack-tip opening displacement and J-integral for mismatched dissimilar joints with interface cracks. The mismatch in elastic, thermal, and plastic hardening properties is not considered, but the mismatch in plastic yield strengths is emphasized here. The main outcome of the present work is that the existing methods to estimate crack driving forces for homogeneous materials can be used with slight modification. Such modification includes (i) mismatch- corrected limit load solutions, and (ii) evaluating the contribution of each material in dissimilar joints to the total crack driving force, which depends on the strength mismatch of the dissimilar joints.

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