• Korean Chemical Engineering Research
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• v.59 no.1
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• pp.42-48
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• 2021

Zn and Al added LiNi0.85Co0.15O2 cathode materials were synthesized to improve electrochemical properties and thermal stability using a solid-state route. Crystal structure, particle size and surface shape of the synthesized cathode materials was measured using XRD (X-ray diffraction) and SEM (scanning electron microscopy). CV (cyclic voltammetry), first charge-discharge profiles, rate capability, and cycle life were measured using battery cycler (Maccor, series 4000). Strong binding energy of Al-O bond enhanced structure stability of cathode material. Electrochemical properties were improved by preventing cation mixing between Li+ and Ni2+. Large ion radius of Zn+ increased lattice parameter of NC cathode material, which meant unit-cell volume was expanded. NCZA25 showed 80% of capacity retention at 0.5 C-rate during 100 cycles, which was 12% higher than that of NC cathode. The discharge capacity of NCZA25 showed 104 mAh/g at 5 C-rate. NCZA25 achieved 36 mAh/g more capacity than that of NC cathod. NCZA25 cathode material showed excellent rate capability and cycling performance.

• Journal of Powder Materials
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• v.28 no.4
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• pp.293-300
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• 2021

We investigate the effect of phosphorous content on the microstructure and magnetic properties of Fe_83.2Si_5.33-0.33xB_10.67-0.67xP_xCu_0.8 (x = 1-4 at.%) nanocrystalline soft magnetic alloys. The simultaneous addition of Cu and P to nanocrystalline alloys reportedly decreases the nanocrystalline size significantly, to 10-20 nm. In the P-containing nanocrystalline alloy, P atoms are distributed in an amorphous residual matrix, which suppresses grain growth, increases permeability, and decreases coercivity. In this study, nanocrystalline ribbons with a composition of Fe_83.2Si_5.33-0.33xB_10.67-0.67xP_xCu_0.8 (x = 1-4 at.%) are fabricated by rapid quenching melt-spinning and thermal annealing. It is demonstrated that the addition of a small amount of P to the alloy improves the glass-forming ability and increases the resistance to undesirable Fe_x(B,P) crystallization. Among the alloys investigated in this work, an Fe_83.2Si₅B₁₀P₁Cu_0.8 nanocrystalline ribbon annealed at 460℃ exhibits excellent soft-magnetic properties including low coercivity, low core loss, and high saturation magnetization. The uniform nanocrystallization of the Fe_83.2Si₅B₁₀P₁Cu_0.8 alloy is confirmed by high-resolution transmission electron microscopy analysis.

• KOREAN JOURNAL OF PACKAGING SCIENCE & TECHNOLOGY
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• v.29 no.1
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• pp.51-57
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• 2023

Because of the global pollution caused by plastic disposal, demand for eco-friendly transformation in the packaging industry is increased. As part of that, the utilization of polylactic acid (PLA) as a food packaging material is increased. However, it is necessary to improve the crystallinity of PLA by adding nucleating agents or to improve the modulus by adding fillers because of the excessive brittleness of the PLA matrix. Thus, the cellulose nanofiber (CNF) was fabricated and dried to obtain a powder form and applied to the CNF/PLA nanocomposite. The effect of CNF on the morphological, thermal, rheological, and dynamic mechanical properties of the composite was analyzed. We can confirm the impregnated CNF particle in the PLA matrix through the field emission scanning electron microscope (FE-SEM). Differential scanning calorimetry (DSC) analysis showed that the crystallinity of not annealed CNF/PLA nanocomposite was increased approximately 2 and 4 times in the 1st and 2nd cycle, respectively, with the shift to lower temperature of cold crystallization temperature (T_cc) in the 2nd cycle. Moreover, the crystallinity of annealed CNF/PLA nanocomposite increased by 13.4%, and shifted T_cc was confirmed.

• Nuclear Engineering and Technology
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• v.55 no.6
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• pp.2139-2146
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• 2023

During reactor operation, the divertor must withstand unprecedented simultaneous high heat fluxes and high-energy neutron irradiation. The extremely severe service environment of the divertor imposes a huge challenge to the bonding quality of divertor joints, i.e., the joints must withstand thermal, mechanical and neutron loads, as well as cyclic mode of operation. In this paper, potassium-doped tungsten (KW) is selected as the plasma facing material (PFM), oxygen-free copper (OFC) as the interlayer, oxide dispersion strengthened copper (ODS-Cu) alloy as the heat sink material, and reduced activation ferritic/martensitic (RAFM) steel as the structural material. In this study, a vacuum brazing technology is proposed and optimized to bond Cu and ODS-Cu alloy with the silver-free brazing material CuSnTi. The most appropriate brazing parameters are a brazing temperature of 940 ℃ and a holding time of 15 min. High-quality bonding interfaces have been successfully obtained by vacuum brazing technology, and the average shear strength of the as-obtained KW/Cu and ODS-Cu alloy joints is ~268 MPa. And a fabrication route for manufacturing the flat-type divertor target based on brazing technology is set. For evaluating the reliability of the fabrication technologies under the reactor relevant condition, the high heat flux test at 20 MW/m² for the as-manufactured flat-type KW/Cu/ODS-Cu/RAFM mockup is carried out by using the Electron-beam Material testing Scenario (EMS-60) with water cooling. This paper reports the improved vacuum brazing technology to connect Cu to ODS-Cu alloy and summarizes the production route, high heat flux (HHF) test, the pre and post non-destructive examination, and the surface results of the flat-type KW/Cu/ODS-Cu/RAFM mockup after the HHF test. The test results demonstrate that the mockup manufactured according to the fabrication route still have structural and interfacial integrity under cyclic high heat loads.

• Journal of the Korean Society of Food Culture
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• v.25 no.5
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• pp.615-624
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• 2010

This study was conducted to investigate the use of sugar alcohols as alternative sweeteners for replacing sucrose in sponge cake. The sponge cakes were prepared with only sucrose or a 50% replacement of sucrose with various sugar alcohols (erythritol, sorbitol, and xylitol). The specific gravity of cake batter containing only sucrose was significantly higher and the viscosity was significantly lower than those containing sugar alcohol (p<0.001). Among sugar alcohols, xylitol was the most similar to sucrose. The thermal characteristics, as assessed by differential scanning calorimetry, showed that sucrose delayed gelatinization of cake batter more than sugar alcohol, as the onset temperature and the peak temperature of cake batter containing only sucrose were higher than those containing sugar alcohol. The moisture content of cake containing sorbitol was the highest and that containing only sucrose was the lowest among cakes. The specific volume of cakes containing only sucrose and xylitol were higher and the baking loss rate of those were lower than other sugar alcohols. The volume and symmetry index of cake containing only sucrose were the highest among cakes (p<0.001), and xylitol was similar to sucrose for the above indices. The redness (a) and yellowness (b) values of crust containing only sucrose were significantly higher than those containing sugar alcohols (p<0.001). The a and b values of crumb containing erythritol were the lowest among cakes, showing a pale yellowish color. The microstructure, as assessed by scanning electron microscopy, showed that the cake containing only sucrose had more uniformly and finely distributed pores and a smoother cross section than that containing sugar alcohols. Cake containing xylitol was similar to cake containing only sucrose. Hardness, chewiness, and gumminess of cake containing only sucrose were higher than those containing sugar alcohols, whereas the adhesiveness of cakes containing sugar alcohols were higher than those containing only sucrose (p<0.01). Among sugar alcohols, xylitol was the most similar to sucrose in textural properties. In a sensory quality test, the tenderness and moistness of cakes containing sorbitol and erythritol were higher than those containing only sucrose and xylitol. The overall acceptance of cakes containing xylitol and only sucrose were higher than those containing sorbitol and erythritol (p<0.001). Thus, xylitol is more appropriate as a 50% replacement for sucrose than erythritol and sorbitol when preparing sponge cake.

• Composites Research
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• v.37 no.3
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• pp.209-214
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• 2024

Graphene oxide (GO), known for its high stiffness, thermal conductivity, and electrical conductivity, is being utilized as a reinforcement in nanocomposite materials. This study evaluates the mechanical properties of epoxy nanocomposites incorporating GO and edge modified GO (E-GO), which has hydroxyl groups substituted only on its edges. GO/E-GO was uniformly dispersed in epoxy resin using ultrasonic dispersion, and mechanical properties were assessed through tensile testing. The results showed that the addition of nanoparticles increased both tensile strength and toughness. The tensile strength of the epoxy without nanoparticles was 74.4 MPa, while the highest tensile strength of 90.7 MPa was observed with 0.3 wt% E-GO. Additionally, the modulus increased from 2.55 GPa to 3.53 GPa with the addition of nanoparticles. Field emission scanning electron microscopy of the fracture surface revealed that the growth of cracks was impeded by the nanoparticles, preventing complete fracture and causing the cracks to split in multiple directions. E-GO, with surface treatment only on the edges, exhibited higher mechanical properties than GO due to its superior dispersion and surface treatment effects. These results highlight the importance of nanoparticle surface treatment in developing high-performance nanocomposite materials.

• Korean Chemical Engineering Research
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• v.50 no.4
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• pp.684-689
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• 2012

Poly(acrylic acid) (PAA) microspheres is one of the widely-used polymeric materials for the bio-field application and the electric materials. For the synthesis of PAA microspheres, the polymerization technique using surfactants is applied. After the synthesis, the purification and separation processes are required for the removal of surfactant. When general organic solvents were used, many problems, such as huge amount of waste solvent, additional separation processes, and the possibility of residual media, were occurred. Thus, High-pressure Soxhlet extraction using liquid $CO_2$ was developed to solve these problems. In this study, High-pressure Soxhlet extraction of the synthesized PAA microspheres using liquid $CO_2$ was conducted for the removal of Monasil PCA which is used for the dispersion polymerization of acrylic acid in compressed liquid Dimethyl ether (DME). The morphology of the extracted PAA particles was checked by field emission scanning electron microscopy (FE-SEM) and the residual concentration of Monasil PCA was analyzed by inductively coupled plasma - Optical Emission Spectrometer (ICP-OES). For studying the effect of the solvent effect, Soxhlet extraction was conducted using n-hexane, liquid DME, and liquid $CO_2$. In case of n-hexane, some extracted PAA microspheres were produced. However, deformation was also occurred due to the high thermal energy of n-hexane vapor. Liquid DME could not remove Monasil PCA. When using liquid $CO_2$, the extracted PAA microspheres which were free for the residual solvent were produced without deformation. For finding the optimum operating condition, high-pressure Soxhlet extraction was conducted for 8 hours with changing the temperature of reboiler and condenser. When the extractor temperature is $19.6{\pm}0.2^{\circ}C$ and the pressure is $51.5{\pm}0.5$ bar, the best removal efficiency was obtained.

• Korean Journal of Materials Research
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• v.2 no.6
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• pp.408-416
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• 1992

Stable TiS$i_2$was formed by RTA on single-Si and on poly-Si. Subsequently, an Al-1% Si layer with 600-nm thick was deposited on top of the TiS$i_2$, Finally, the specimens were annealed for 30min at 400-60$0^{\circ}C$in $N_2$ambient. The thermal stability of Al-1% Si/TiS$i_2$bilayer and interfacial reaction were investigated by measuring sheet resistance, Auger electron spectroscopy (AES), and scanning electron microscopy (SEM). The composition and phase of precipitates formed by the reaction of Al-1% Si with Ti-silicide were studied by energy dispersive spectroscopy (EDS), X-ray diffraction (XRD). In the case of single-Si substrate the reaction of Al-1% Si layer with TiS$i_2$layer resulted in precipitates, consuming all TiS$i_2$layer at 55$0^{\circ}C$. On the other hand, the disappearance of TiS$i_2$on poly-Si occurred at 50$0^{\circ}C$ and more precipitates were formed by the reaction of Al-1% Si/TiS$i_2$on potty-Si substrate than those of the reaction on single-Si substrate. This phenomenon resulted from the fact that Ti-silicide formed on poly-Si was more unstable than on single-Si by the effect of grain boundary. By EDS analysis the precipitates were found tobe composed of Ti, Al, and Si. X-ray diffraction showed the phase of precipitates to be theT$i_7$A$l_5$S$i_12$ternary compound.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.31-31
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• 2010

The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).

• Journal of the Korean Vacuum Society
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• v.17 no.6
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• pp.528-537
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• 2008

60 nm and 20 nm thick hydrogenated amorphous silicon(a-Si:H) layers were deposited on 200 nm $SiO_2$/single-Si substrates by inductively coupled plasma chemical vapor deposition(ICP-CVD). Subsequently, 30 nm-Ni layers were deposited by an e-beam evaporator. Finally, 30 nm-Ni/(60 nm and 20 nm) a-Si:H/200 nm-$SiO_2$/single-Si structures were prepared. The prepared samples were annealed by rapid thermal annealing(RTA) from $200^{\circ}C$ to $500^{\circ}C$ in $50^{\circ}C$ increments for 40 sec. A four-point tester, high resolution X-ray diffraction(HRXRD), field emission scanning electron microscopy(FE-SEM), transmission electron microscopy(TEM), and scanning probe microscopy(SPM) were used to examine the sheet resistance, phase transformation, in-plane microstructure, cross-sectional microstructure, and surface roughness, respectively. The nickel silicide from the 60 nm a-Si:H substrate showed low sheet resistance from $400^{\circ}C$ which is compatible for low temperature processing. The nickel silicide from 20 nm a-Si:H substrate showed low resistance from $300^{\circ}C$. Through HRXRD analysis, the phase transformation occurred with silicidation temperature without a-Si:H layer thickness dependence. With the result of FE-SEM and TEM, the nickel silicides from 60 nm a-Si:H substrate showed the microstructure of 60 nm-thick silicide layers with the residual silicon regime, while the ones from 20 nm a-Si:H formed 20 nm-thick uniform silicide layers. In case of SPM, the RMS value of nickel silicide layers increased as the silicidation temperature increased. Especially, the nickel silicide from 20 nm a-Si:H substrate showed the lowest RMS value of 0.75 at $300^{\circ}C$.