• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.1026-1029
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• 2008

Temperature increase during OLED operation can significantly degrade the device lifetime. By using top-emission OLEDs fabricated on glass and silicon substrates that have different thermal conductivities, we found that efficient heat dissipation and corresponding lifetime improvement can be obtained by making a direct contact between the OLED anode and the high thermally-conductive silicon substrate. We describe substrate-dependent OLED heat dissipation behavior and OLED lifetime improvement by using infrared camera images and constant current stress test methods.

• Journal of the Korean Society for Industrial and Applied Mathematics
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• 제20권4호
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• pp.309-332
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• 2016

Finite element method has been applied to solve the fundamental governing equations of natural convective, electrically conducting, incompressible fluid flow past an infinite vertical plate surrounded by porous medium in presence of thermal radiation, viscous dissipation, Soret and Dufour effects. In this research work, the results of coupled partial differential equations are found numerically by applying finite element technique. The sway of significant parameters such as Soret number, Dufour number, Grashof number for heat and mass transfer, Magnetic field parameter, Thermal radiation parameter, Permeability parameter on velocity, temperature and concentration evaluations in the boundary layer region are examined in detail and the results are shown in graphically. Furthermore, the effect of these parameters on local skin friction coefficient, local Nusselt number and Sherwood numbers is also investigated. A very good agreement is noticed between the present results and previous published works in some limiting cases.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
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• pp.767-768
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• 2006

In this study, copper vapor chambers with built-in cooling fins, which eliminated the soldered or brazed joints in the conventional vapor chamber, were fabricated using the metal injection molding process. The results show that with optimized molding parameters, fins with an aspect ratio up to 18 could be produced. After sintering, the densities of the fin and chamber reached 96%. With only 32 cooling fins and a small fan installed, the thermal resistance of the heat sink was $1.156^{\circ}C/W$, and the power dissipation was 40W when the junction temperature was $70^{\circ}C$. When copper powder was sintered onto the chamber to make a vapor chamber, the thermal resistance decreased to $1.046^{\circ}C/W$.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2008년도 추계학술대회B
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• pp.2286-2291
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• 2008

Some electronics component, which is adopted as components of antenna for radar or satellite system and used for amplifying signals to transmit, is accompanied by very significant heat dissipation levels because of the inefficiencies inherent in radio frequency wave generation. So, proper cooling performance for that system is base requirement for thermal design. On this paper, we applied heat spreading structures to reduce thermal density and find the optimum values of heat sink design factors through theoretically, numerically and evaluated by product test. As the results, the performance of the cooling system shows the propriety of cooling high density heat dissipation electronics components.

• 한국지반신소재학회논문집
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• 제12권1호
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• pp.83-92
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• 2013

지중송전관로를 통한 송전용량 증대를 위해서는 송전 시 발생하는 열을 빠르게 소산시킬 수 있도록 습윤 시 $50^{\circ}C$-cm/Watt, 건조 시 $100^{\circ}C$-cm/Watt 이하의 열 저항률을 갖는 재료를 되메움재로 사용하는 것이 요구되며, 이를 위해 선행연구에서는 요구되는 조건을 만족시키는 열 소산 되메움재를 개발하였다. 이 연구에서는 개발된 열 소산 되메움재의 열 소산효과를 알아보기 위하여 1회선의 단면을 현장에 설치하고 개발된 열 소산 되메움재와 강모래, 현장토에 대하여 열을 직접 가하고 일정한 지점에서 온도를 측정함으로서 현장시험을 수행하였고, 시험결과와 유한요소해석과의 비교를 통해 열 소산효과를 비교하였다. 비교결과, 열원과 가까운 지점에서는 개발된 열 소산 되메움재가 강모래와 현장토에 비해 열평형상태에 빨리 도달하는 것으로 나타났으며, 열평형에 도달하는 온도도 높은 것으로 나타나 열 소산효과가 우수한 것으로 나타났다. 또한 다른 지점에서도 개발된 되메움재가 다른 재료보다 온도가 높아 열 소산효과가 우수한 것으로 나타났다. 또한 함수비의 변화에도 열 소산효과가 크게 변화하지 않는 것으로 나타났다.

• ETRI Journal
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• 제27권3호
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• pp.337-340
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• 2005

A spot-size converted Fabry-Perot laser diode (LD) was flip-chip bonded to a silica-terraced planar lightwave circuit(PLC) platform to examine the effect of the silica terrace on the heat dissipation of the LD module. From the measurement of the light-current characteristics, it was discovered that the silica terrace itself is not a strong thermal barrier, but the encapsulation of the integrated LD with an index-matching polymer resin more or less deteriorates the heat dissipation.

• 한국표면공학회지
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• 제52권2호
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• pp.58-61
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• 2019

The aim of this study is to quantitatively demonstrate the possibility of heat transfer by thermal radiation by comparing heat transfer by conventional heat transfer and radiation by radiation. 1) The heat transfer was measured by using filler of TIM material with low thermal conductivity (CuS). As a result, heat transfer was easier than ceramic with high thermal conductivity ($Al_2O_3$ and $Si_3N_4$). 2) The reason for this is thought to be that the infrared wave due to radiation of the air diaphragm has moved easily. 3) From the above results, the heat dissipation of the TIM material indicates the possibility of heat transfer by thermal radiation.

• 마이크로전자및패키징학회지
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• 제22권2호
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• pp.5-9
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• 2015

3차원 적층 반도체에서의 열관리를 위한 연구 동향에 대해서 살펴보았다. 적층 구조는 평면구조와 달리 단위 패키지당 발열량 증가, 단위 바닥면적당 전력 소비량 증가, 이웃 칩의 영향으로 과열 가능성의 증가, 냉각구조 추가의 어려움, 국부 열원의 발달 등으로 발열 문제가 매우 심각해질 수 있으며, 특히 국부 열원은 적층을 위해 칩 두께가 얇아짐으로 더욱 심화되고 있어 이를 고려한 발열관리가 필요하다. 구리 TSV는 높은 열전도도를 이용하여 열원의 열을 효과적으로 주변으로 배출하는 역할을 하며 범프 및 gap 충진 재료, 적층 순서와 함께 적층 반도체의 열확산에 큰 영향을 미친다. 이는 실험으로나 수치해석으로 확인되고 있으며, 향후 적층 구조의 각 구성 요소들의 열 특성을 반영한 회로 설계가 이루어질 것으로 예상된다.

• Journal of Advanced Marine Engineering and Technology
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• 제40권2호
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• pp.96-101
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• 2016

The thermal management of high-power LED components in an assembly structure is crucial for the stable operation and proper luminous function. This study employs numerical tools to determine the optimum thermal design in LEDs with a heat sink consisting of a crevice-type vapor-chamber heat pipe. The effects of the MCPCB are investigated in terms of the substrate thicknesses on which the LEDs are mounted. Further, different placement configurations in a system module are considered. This study found that for a confined area, a power of 40 W/LED is applicable to a high-power package. Furthermore, the thermal conductivity of dielectric layer materials should ideally be greater than 0.9 W/m.K. The temperature conditions of the vapor chamber in a heat pipe greatly affect the thermal performance of the system. At an offset distance of 9.0 mm and a $2^{\circ}C$ increase in the temperature of the heat pipe, the resulting maximum temperature increase is approximately $1.9^{\circ}C$ for each heat dissipation temperature. Finally, at a thermal conductivity of 0.3 W/m.K, it was found that the total thermal resistance changes dramatically. Above 1.2 W/m.K, the resistance change reduces exponentially.

• Transactions on Electrical and Electronic Materials
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• 제1권4호
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• pp.25-29
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• 2000

In this paper, PET(Ployethylene Terephthalate) films with semiconducting and interface layers were investigated, The electrical properties, such as volume resistivity, tan$\delta$(dissipation factor) and breakdown strength at various temperatures were measured. Thermal analysis of PET and semiconducting films were measured and compared by differential scanning calorimeter(DSC) of each film. It is found that the volume resistivity of films(dependence on semiconducting interface layers)and electrical properties of PET films are changed ,Breakdown strength and dissipation factor of PET films with semiconducting layer (PET/S/PET) are decreased more greatly than PET and PET/PET films, due to the increase of charge density of charges at two contacted interfaces between PET and semiconductor, The dissipation factor of each films in increased with temperature,. For PET/S/PET film, is depended on temperature more than PET of PET/PET. However, the breakdown strength is increased up to 85$\^{C}$ and then decreased over 100$\^{C}$The electrical properties of PET films with semiconducting/interface layer are worse than without it It is due to a result of temperature dependency, which deeply affects thermal resistance property of PET film more than semiconducting/interface layers.