• Applied Microscopy
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• v.25 no.2
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• pp.73-79
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• 1995

The oxidation of silicon wafers is an essential step in the fabrication of semiconductor devices. It is known to induce degradation of electrical properties and lattice strain of Si substrate from thermal oxidation process due to charged interface and thermal expansion mismatch from thermally grown SiO, film. In this study, convergent beam electron diffraction technique is employed to directly measure the lattice strains in Si(100) and $4^{\circ}$ - off Si(100) substrates with thermally grown oxide layer at $1200^{\circ}C$ for three hours. The ratios of {773}-{973}/{773}-{953} Higher Order Laue Zone lines were used at [012] zone axis orientation. Lattice parameters of the Si substrate as a function of distance from the interface were determined from the computer simulation of diffraction patterns. Correction value for the accelerating voltage was 0.2kV for the kinematic simulation of the [012]. HOLZ patterns. The change in the lattice strain profile before and after removal of oxide films revealed the magnitudes of intrinsic strain and thermal strain components. It was shown that $4^{\circ}$ -off Si(100) had much lower intrinsic strain as surface steps provide effective sinks for the free Si atoms produced during thermal oxidation. Thermal strain in the Si substrate was in compression very close to the interface and high concentration of Si interstitials appeared to modify the thermal expansion coefficient of Si.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2017.05a
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• pp.172-178
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• 2017

Thermal property is one of the important characteristic in the field of energetic materials. As the energy material is released during decomposition, DSC(Differential Scanning Calorimetry) is frequently used for the thermal analysis. In case of the dynamic DSC measurements, thermal dynamic change like melting is prevented from the thermal property measurements. And due to the predicting kg scale, the conditions of the heat exchange with the environment significantly is changed. In this study, As the method to resolve the problem, we predict the thermal aging property using the AKTS thermokinetic program from DSC measurements which performed isothermal method. Predicting the thermal aging properties from ARC(Accelerating Rate Calorimetry) measurement, we compare two results.

• Journal of Aerospace System Engineering
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• v.17 no.4
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• pp.18-27
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• 2023

In this paper, the structural-thermal-optical performance analysis of the mirror was performed by setting the laser heat source as the boundary condition of the thermal analysis. For the laser heat source model, the Beer-Lambert model considering semi-transparent optical material based on Gaussian beam was selected as the boundary condition, and the mechanical part was not considered, to analyze the performance of only the mirror. As a result of the thermal analysis, thermal stress and thermal deformation data due to temperature change on the surface of the mirror were obtained. The displacement data of the surface due to thermal deformation was fitted to a Zernike polynomial to calculate the optical performance, through which the performance of the mirror when a high-energy laser was incident on the mirror could be predicted.

• Proceedings of the KSME Conference
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• 2007.05b
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• pp.2482-2487
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• 2007

Numerical simulations are conducted for the analysis of a thermal mass air flow sensor with periodic heating pulses on silicon-nitride ($Si_3N_4$) thin membrane structure. This study aims to find the locations of temperature sensors on the thin membrane and the heating pulse conditions, that the higher sensitivity can be achieved, for the development of a MEMS fabricated mass air flow sensor which is driven in periodic heating pulse. The simulations, thus, focus on the membrane temperature profile according to variation of the flow velocity, heating duration time and imposed power. The flow velocity of the simulations is ranging from 3 m/s to 35 m/s, heating duration time from 1 ms to 3 ms and imposed power from 50 mW to 90 mW. The corresponding Reynolds numbers vary from 1000 to 10000.

• Journal of Energy Engineering
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• v.6 no.2
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• pp.119-128
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• 1997

A method to mitigate the thermal stratification flow of a horizontal pipe line is proposed by heating external bottom of the pipe with electrical heat tracing. Unsteady two dimensional model has been used to numerically investigate an effect of the external heating on the thermal stratification flow. The dimensionless governing equations are solved by using the control volume formulation and SIMPLE algorithm. Temperature distribution, streamline profile and Nusselt number distributions are analyzed under heating conditions. The numerical results of this study show that the maximum dimensionless temperature difference between hot and cold sections of the inner wall of pipe is 0.424 at dimensionless time of 1,500 and the thermal stratification phenomenon disappears at about dimensionless time of 9,000.

• Journal of computational fluids engineering
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• v.21 no.1
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• pp.43-49
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• 2016

Thermal cracking is commonly modeled as plug flow reaction, neglecting the lateral gradients present. In this paper, 2-dimensional computational fluid dynamics including turbulence model and molecular reaction scheme are carried out. This simulation is solved by means of coupled implicit scheme for stable convergence of solution. The reactor is modeled as an isothermal tube, whose length is 1.2 m and radius is 0.01 m, respectively. At first, The radial profile of velocity and temperature at each point are predicted in its condition. Then the bulk temperature and conversion curve along the axial direction are compared with other published data to identify the reason why discussed variations of properties are important to product yield. Finally, defining a new non-dimensional number, Effect of interaction with turbulence, heat transfer and chemical reaction are discussed for design of thermal cracking furnace.

• Journal of the Korean Society for Precision Engineering
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• v.20 no.10
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• pp.183-190
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• 2003

Major device failures such as die cracking, interfacial delamination and warpage in flip chip packages are due to excessive heat and thermal gradients- There have been significant researches toward understanding the thermal performance of electronic packages, but the majority of these studies do not take into account the combined effects of thermo-mechanical interactions of the different package constituents. This paper investigates the thermo-mechanical performance of flip chip package constituents based on the finite element method with thermo-mechanically coupled elements. Delaminations with different lengths between the silicon die and underfill resin interfaces were introduced to simulate the defects induced during the assembly processes. The temperature gradient fields and the corresponding stress distributions were analyzed and the results were compared with isothermal case. Parametric studies have been conducted with varying thermal conductivities of the package components, substrate board configurations. Compared with the uniform temperature distribution model, the model considering the temperature gradients provided more accurate stress profiles in the solder interconnections and underfill fillet. The packages with prescribed delaminations resulted in significant changes in stress in the solder. From the parametric study, the coefficients of thermal expansion and the package configurations played significant roles in determining the stress level over the entire package, although they showed little influence on stresses profile within the individual components. These observations have been implemented to the multi-board layer chip scale packages (CSP), and its results are discussed.

• KIEE International Transactions on Electrophysics and Applications
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• v.2C no.6
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• pp.309-313
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• 2002

In this paper, we have studied minimization of the kerf-width and surface burning, which occurred after the conventional singulation process of the multi-layer BGA board with copper, polyethylene and epoxy glass fiber. The high thermal energy of a pulsed Nd:YAG laser is used to cut the multi-layer board. The most considerable matter in the laser cutting of the multi-layer BGA boards is their different absorption coefficient to the laser beam and their different heat conductivity. The cut mechanism of a multi-layer BGA board using a 2$^{nd}$ harmonic Nd:YAG laser is the thermal vaporization by high temperature rise based on the Gaussian profile and copper melting point. In this experiment, we found that the sacrifice layer and Na blowing are effective in minimizing the surface burning by the reaction between oxygen in the air and the laser beam. In addition, N2 blowing reduces laser energy loss by debris and suppresses surface oxidation. Also, the beam incidence on the epoxy layer compared to polyimide was much more suitable to reduce damage to polyimide with copper wire for the multi layer BGA singulation. When the polyester double-sided tape is used as a sacrifice layer, surface carbonization becomes less. The SEM, non-contact 3D inspector and high-resolution microscope are used to measure cut line-width and surface morphology.

• Journal of the Korean Society for Precision Engineering
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• v.28 no.4
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• pp.463-473
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• 2011

The warm shrink fitting process is generally used to assemble automobile transmission parts (shaft/gear). But the fitting process can cause the dimensions of addendum and dedendum of the gear to change with respect to the fitting interference and the profile of the gear. As a result, there may be additional noise and vibration between gears. To address these problems, we analyzed the warm shrink fitting process according to process parameters; the fitting interference between the outer diameter of the shaft and the inner diameter of the gear, the inner diameter of the gear, addendum and dedendum of the gear, the heating temperature. In this study, a closed form equation for predicting the amount of deformation of addendum and dedendum in the R-direction was proposed. And the FEA method to analyze the cooling process was proposed for thermal-structural-thermal coupled field analysis of the warm shrink fitting process (heating-fitting-cooling process).

• Korean Journal of Materials Research
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• v.31 no.2
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• pp.97-100
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• 2021

We report the effect of Standard Clean-1 (SC-1) cleaning to remove residual Ti layers after silicidation to prevent Al diffusion into Si wafer for Ti Schottky barrier diodes (Ti-SBD). Regardless of SC-1 cleaning, the presence of oxygen atoms is confirmed by Auger electron spectroscopy (AES) depth profile analysis between Al and Ti-silicide layers. Al atoms at the interface of Ti-silicide and Si wafer are detected, when the SC-1 cleaning is not conducted after rapid thermal annealing. On the other hand, Al atoms are not found at the interface of Ti-SBD after executing SC-1 cleaning. Al diffusion into the interface between Ti-silicide and Si wafer may be caused by thermal stress at the Ti-silicide layer. The difference of the thermal expansion coefficients of Ti and Ti-silicide gives rise to thermal stress at the interface during the Al layer deposition and sintering processes. Although a longer sintering time is conducted for Ti-SBD, the Al atoms do not diffuse into the surface of the Si wafer. Therefore, the removal of the Ti layer by the SC-1 cleaning can prevent Al diffusion for Ti-SBD.