• Proceedings of the KIEE Conference
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• 1987.11a
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• pp.187-190
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• 1987

This paper is for the charge storage effect and C-V characteristics of MIS type diode which is the basic structural unit of charge-coupled device after growing the $Pb_{1-x}Sn_xTe$ crystal. $Pb_{1-x}Sn_xTe$ singlecrystal dbtained from the horizental furnace using Bridgman method. To judge whether the grown singlecrystal is suitable for specimen or not, it was investigated by X-ray diffraction analysis, thermogravimetry and differential thermal analysis. The C-V characteristics of the specimen caused to anodic oxidation was the best when the insulator film's depth was 250[$\AA$]. Measuring the C-V characteristics aftermanufacturing MIS type diode resulted that the whole capacitance was the largest when the supply voltage was low, 0.3[V] and the capacitance also varied according to the variance frequence when the supply voltage is over 0.5[V]. From the above result, even if the supply voltage is low, the $Pb_{1-x}Sn_xTe$ also have a good charge storage effect.

• Current Optics and Photonics
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• v.4 no.3
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• pp.238-246
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• 2020

The heat distribution in crystals in a 2-㎛ acousto-optic Q-switched Tm:LuAG laser pumped by pulsed-laser-diode (pulsed-LD) intermittent-pumping technology was analyzed using COMSOL software. The thermal lensing effect of the Tm:LuAG crystal can be mitigated by pulsed-LD intermittent-pumping techniques. An experimental setup using this kind of approach achieved maximum output energy of 8.31 mJ, minimum pulse width of 101.9 ns, and highest peak power of 81.55 kW, reached at a Q-switched repetition rate of 200 Hz. It offers significant improvement of performance of the output laser beam, compared to pulsed-LD double-ended pumping technology at the same repetition rate.

• Proceedings of the KIPE Conference
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• 2018.07a
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• pp.536-538
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• 2018

This paper introduces an enhanced interleaved (IL) PFC (Power Factor Correction) boost converter typed 650V Intelligent Power Module (IPM), which is fully optimized hybrid IGBT converter modules; Silicon (Si) IGBT and Silicon Carbide (SiC) diode, for up to 10kW HVAC (Heating, Ventilation, and Air Conditioning) systems. It utilizes newly developed $4^{th}$ Generation Field Stop (FS) trench IGBTs, $EXTREMEFAST^{TM}$ anti-paralleled diodes, SiC Junction Barrier Schottky (JBS) diodes, Bridge rectifiers, Multi-function LVIC, and Built-in thermistor provide good reliable characteristics for the entire system. This module also takes technical advantage of DBC (Direct Bonded Copper) substrate for the better thermal performance. It is shown that the Si IGBT/SiC diode hybrid IL PFC module can achieve excellent EMI performance and greatly enhance the power handling capability or switching frequency of various applications compared to the Si IGBT/Diode. This paper provides an overall description of the newly developed 650V/50A Hybrid SiC IL PFC IPM product.

• Journal of the Semiconductor & Display Technology
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• v.7 no.1
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• pp.47-51
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• 2008

The Al:Au double-layer metal electrode for use in transparent, dual emission of organic light-emitting diode (OLED) was fabricated. The electrode of Al:Au metals with various thicknesses was deposited by the vacuum thermal evaporation technique. For Al thickness of 1 nm, a bottom luminance of $4880\;cd/m^2$ was observed at 8 V. Otherwise, top luminance of $2020\;cd/m^2$ were observed at 8 V. In addition, the threshold voltages of the electrodes were 2.2 V. It was forward that the inserting 1 nm Al between LiF and Au enhanced electron injection with tunneling effect.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.191-192
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• 2005

The reverse breakdown voltages of 4H-SiC SBD(schottky barrier diode)s with FP(Field Plate) and/or FLR(Field Limiting Ring) as a edge termination, were investigated. The breakdown voltages of SBDs with FP ware investigated varying the overlap width from $1{\mu}m$ to $30{\mu}m$. The maximum average breakdown voltages was 475V. There is no significant changes for the devices with overlap width of between $5{\mu}m\sim30{\mu}m$. It was confirmed that the dielectric breakdown of the thin thermal oxide is main cause of device failure. However, the breakdown voltage of SBD with FLR was 1400V even though the FLR edge termination structure was not optimized.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.2
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• pp.128-131
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• 2009

Silicon carbide (SiC) has attracted significant attention for high frequency, high temperature and high power devices due to its superior properties such as the large band gap, high breakdown electric field, high saturation velocity and high thermal conductivity. We performed Al ion implantation processes on n-type 4H-SiC substrate using a SILVACO ATHENA numerical simulator. The ion implantation model used Monte-Carlo method. We simulated the effect of channeling by Al implantation in both 0 off-axis and 8 off-axis n-type 4H-SiC substrate. We have investigated the effect of varying the implantation energies and the corresponding doses on the distribution of Al in 4H-SiC. The controlled implantation energies were 40, 60, 80, 100 and 120 keV and the implantation doses varied from $2{\times}10^{14}$ to $1{\times}10^{15}\;cm^{-2}$. The Al ion distribution was deeper with increasing implantation energy, whereas the doping level increased with increasing dose. The effect of post-implantation annealing on the electrical properties of Al-implanted p-n junction diode were also investigated.

• Journal of the Semiconductor & Display Technology
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• v.17 no.4
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• pp.37-41
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• 2018

$Y_3A_{l5}O_{12}:Ce^{3+},Pr^{3+}$ single crystal phosphor was prepared by floating zone method. single crystal was confirmed to have a Ia-3d (230) space group of cubic structure and showed regular morphology. The optical properties, single crystal exhibited a emission band from green, yellow wide wavelength and 610nm, 640nm red wavelength vicinity. The luminance maintenance rate was decreased by phonon with increasing temperature, but high luminance is maintained more than powder phosphor. In addition, $Y_3A_{l5}O_{12}:Ce^{3+},Pr^{3+}$ single crystal phosphor was applied to a high power blue laser diode, we implemented high power white laser lightings. and it was confirmed that thermal properties over time, due to the effective heat transfer of complete crystal structure. We confirmed that excellent radiant heat properties than powder phosphor was applied to a high power white laser diode.

• Journal of Hydrogen and New Energy
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• v.26 no.2
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• pp.184-191
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• 2015

As the power electronics system increases the frequency, the power loss and thermal management are paid more attention. This research presents a real time model of dissipation power with junction temperature response for 120kw IGBT inverter which is applied to the thermal management of high power IGBT inverter. Since the computational time is critical for real time simulation, look-up tables of IGBT module characteristic curve are implemented. The power loss from IGBT provides a clue to calculate the temperature of each module of IGBT. In this study, temperature of each layer in IGBT is predicted by lumped capacitance analysis of layers with convective heat transfer. The power loss and temperature of layers in IGBT is then communicated due to mutual dependence. In the dynamic model, PWM pulses are employed to calculation real time IGBT and diode power loss. Under Matlab/Simulink$^{(R)}$ environment, the dynamic model is validated with experiment. Results showed that the dynamic response of power loss is closely coupled with effective thermal management. The convective heat transfer is enough to achieve proper thermal management under guideline temperature.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.8
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• pp.15-25
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• 1997

The integration method of carier concentrations to redcue the discretization error of th box integratio method used in the discretization of the three-dimensional poisson's equation is presented. The carrier concentration is approximated in the closed form as an exponential function of the linearly varying potential in the element. The presented method is implemented in the three-dimensional poisson's equation solver running under the windows 95. The accuracy and the convergence chaacteristics of the three-dimensional poisson's equation solver are compared with those of DAVINCI for the PN junction diode and the n-MOSFET under the thermal equilibrium and the DC reverse bias. The potential distributions of the simulatied devices from the three-dimensional poisson's equation solver, compared with those of DAVINCI, has a relative error within 2.8%. The average number of iterations needed to obtain the solution of the PN junction diode and the n-MOSFET using the presented method are 11.47 and 11.16 while the those of DAVINCI are 21.73 and 23.0 respectively.

• Solar Energy
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• v.18 no.3
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• pp.119-128
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• 1998

This study has been carried out to develop a thermo-diode system capable of adjusting heat flow direction, solar absorptivity and thermal capacity. What we call "Smart Module" here has emerged from a series of repeated processes involving design, construction and test. In all, it is found that liquid thermo-diode systems are viable in harnessing the sun's energy. The module can be applied for space heating in winter and reduce the cooling load of buildings in summer.