• Nuclear Engineering and Technology
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• v.51 no.2
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• pp.369-376
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• 2019

A complete solution for a soluble-boron-free (SBF) small modular reactor (SMR) is pursued with a new burnable absorber concept, namely centrally-shielded burnable absorber (CSBA). Neutronic flexibility of the CSBA design has been discussed with fuel assembly (FA) analyses. Major design parameters and goals of the SBF SMR are discussed in view of the reactor core design and three CSBA designs are introduced to achieve both a very low burnup reactivity swing (BRS) and minimal residual reactivity of the CSBA. It is demonstrated that the core achieves a long cycle length (~37 months) and high burnup (~30 GWd/tU), while the BRS is only about 1100 pcm and the radial power distribution is rather flat. This research also introduces a supplementary reactivity control mechanism using stainless steel as mechanical shim (MS) rod to obtain the criticality during normal operation. A further analysis is performed to investigate the local power peaking of the CSBA-loaded FA at MS-rodded condition. Moreover, a simple $B_4C$-based control rod arrangement is proposed to assure a sufficient shutdown margin even at the cold-zero-power condition. All calculations in this neutronic-thermal hydraulic coupled investigation of the 3D SBF SMR core are completed by a two-step Monte Carlo-diffusion hybrid methodology.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.12
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• pp.80-90
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• 1994

To develop VLSI of higher packing density with 0.5.mu.m gate length of less, semiconductor devices require shallow junction with higher doping concentration. the most common method to form the shallow junction is ion implantation, but in order to remove the implantation induced defect and activate the implanted impurities electrically, ion-implanted Si should be annealed at high temperature. In this annealing, impurities are diffused out and redistributed, creating deep PN junction. These make it more difficult to form the shallow junction. Accordingly, to miimize impurity redistribution, the thermal-budget should be kept minimum, that is. RTA needs to be used. This paper reports results of the diffusion characteristics of PSG film by varying Phosphorus weitht %/ Times and temperatures of RTA. From the SIMS.ASR.4-point probe analysis, it was found that low sheet resistance below 100 .OMEGA./ㅁand shallow junction depths below 0.2.mu.m can be obtained and the surface concentrations are measured by SIMS analysis was shown to range from 2.5*10$^{17}$ aroms/cm$^{3}$~3*10$^{20}$ aroms/cm$^{3}$. By depending on the RTA process of PSG film on Si, LDD-structured nMOSFET was fabricated. The junction depths andthe concentration of n-region were about 0.06.mu.m. 2.5*10$^{17}$ atom/cm$^{-3}$ , 4*10$^{17}$ atoms/cm$^{-3}$ and 8*10$^{17}$ atoms/cm$^{3}$, respectively. As for the electrical characteristics of nMOS with phosphorus junction for n- region formed by RTA, it was found that the characteristics of device were improved. It was shown that the results were mainly due to the reduction of electric field which decreases hot carriers.

• Journal of the Korean Society for Nondestructive Testing
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• v.30 no.2
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• pp.85-90
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• 2010

The infrared energy is emitted in the infrared wavelength range that corresponds to the surface temperature of a object which has temperature that is over the absolute the temperature(OK). The infrared thermography (IRT) is a non-destrnctive testing method that provides thermal video for the user in real-time by converting the infrared quantity that is detected by the infrared detector into temperature. The pipes of nuclear power plant(NPP) could be thinned by the corrosion and fatigue and the defect could lead to a big accident. For this reason, the effective non-destructive testing method is necessary. In this study, the relationship between the measured temperature and the defect depth or size of NPP pipes were recognized and that was applied to detect the wall thinning defects of NPP pipes.

• Journal of Sensor Science and Technology
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• v.8 no.5
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• pp.400-406
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• 1999

Piezoresistive flow sensors with four different types of microbeam structures were fabricated using (100), n/$n^+$/n three-layer silicon wafer and their characteristics were investigated. Piezoresistors were formed through boron diffusion and its values were about $1\;k{\Omega}$. Three-dimensional silicon microbeams were constructed by porous silicon micromachining and curled microbeams were fabricated by the difference in the thermal expansion coefficient between silicon and metal. The output response of the fabricated sensor was evaluated through half- bridge. The output voltage increased with increasing length of microbeam at the same flow velocity, while the detectable measurement range extended with decreasing length of microbeam. The output voltage of the fabricated sensors were increased with quotient of 3.2 of the flow rate since the stress of the beam versus the gas flow showed non-linear characteristics.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.16 no.12
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• pp.1204-1211
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• 2004

It is difficult to apply a conventional selection guide for diffusers when the diffuser is installed in a perimeter zone, because the air diffusion performance index (ADPI) vs. throw/length (T/L) ratio curve listed in conventional guide does not consider the perimetric heating load through the walls. The objective of this study is to evaluate the effect of the perimetric heating load on the ADPI and propose a selection guide for a proper line diffuser when perimetric heating load exists. The velocity and temperature distributions and the ADPI values are obtained numerically with various heat load ratios and air flow rates. The velocity and temperature distributions and the ADPI values are analyzed by CFD in case of various heat load ratios and air flow rates. Also, ADPI was calculated by those results. The ADPI values by numerical results are compared with an existing experimental data to verify the method for the evaluation of ADPI proposed in a present study. In case of a line diffuser installed at the high side wall, the ADPI decreases according to the increases of the flow rate on every heat load ratio of the present study except 0.75. The ADPI vs. T/L ratio curves have been proposed for the heat load ratios of 0.25, 0.5, 0.75 to guarantee the comport thermal environment when diffusers are installed in perimeter zone.

• Journal of the Korean Chemical Society
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• v.48 no.6
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• pp.553-560
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• 2004

In this experiment, a three dimensional structure analysis was carried out to examine the surface defects of semiconductor made artificially on known scale. It was investigated the three dimensional imaging according to the sample depth and the thermal diffusivity as well as the carrier transport properties. The thermal diffusivity measurement of the intrinsic GaAs semiconductor was also analyzed by the difference of frequency-dependence photoacoustic signals from the sample surface of different conditions. Thermal properties such as thermal diffusion length or thermal diffusivity of the Si wafer with and without defects on the surface were obtained by interpreting the frequency dependence of the PA signals. As a result, the photoacoustic signal is found to have the dependency on the shape and depth of the defects so that their structure of the defects can be analyzed. This method demonstrates the possibility of the application to the detection of the defects, cracks, and shortage of circuits on surface or sub-surface of the semiconductors and ceramic materials as a nondestructive testing(NDT) and a nondestructive evaluation(NDE) technique.

• Korean Journal of Materials Research
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• v.1 no.3
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• pp.132-138
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• 1991

A comparision was made on the influence of BPSG flow temperatures on the electrical properties in submicron CMOS DRAMs containing two BPSG layers. Three different combinations of BPSG flow temperature such as $850^{\circ}C/850^{\circ}C,\;850^{\circ}C/900^{\circ}C,\;and\;900^{\circ}C/900^{\circ}C$ were employed and analyzed in terms of threshold, breakdown and isolation voltage along with sheet resistance and contact resistance. In case of $900^{\circ}C/900^{\circ}C$ flow, the threshold voltage of NMOS was decreased rapidly in channel length less than $0.8\mu\textrm{m}$ with no noticeable change in PMOS and a drastic decrease in breakdown voltages of NMOS and PMOS was observed in channel length less than and equal to $0.7\mu\textrm{m}$ and $0.8\mu\textrm{m}$, respectively. Little changes in threshold and breakdown voltages of NMOS and PMOS, however, were shown down to channel length of $0.6\mu\textrm{m}$ in case of $850^{\circ}C/850^{\circ}C$ flow. The isolation voltage was increased with decreasing BPSG flow temperature. A significant increase in the sheet resistance and contact resistance was noticeable with decreasing BPSG flow temperature from $900^{\circ}C$ to $850^{\circ}C$. All these observations were rationalized in terms of dopant diffusion and activation upon BPSG flow temperature. Some suggestions for improving contact resistance were made.

• Korean Journal Plant Pathology
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• v.1 no.1
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• pp.33-37
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• 1985

A yellow stripe and bud benting disease of soybean was commonly observed on the field at Suweon area. The causal agent was identified as alfalfa mosaic virus (AMV) by indicator plant reactions, physical properties, serological test and electron microscopy. AMV produced vein clearing, top necrosis, top bent and mottling on the parts of soybean plants. Local lesions were produced on the inoculated leaves of Vigna sesquipedialis, Vicia faba and Tetragonia expansa, while Chenopodium am, anticolor, C. quinoa, Pisum satvium, Petunia hybrida and Nicotiana tabacum 'Bright yellow' were systemically infected. The thermal inactivation point was $60^{\circ}C$, dilution end point was $10^{-3}$, and longevity in vitro was 2 days at room temperature. AMV from soybean was reacted with AMV - antiserum in agar gel diffusion test. Electron microscopy of AMV from soybean exhibited bacilliform particles of 60nm in length.

• Environmental Sciences Bulletin of The Korean Environmental Sciences Society
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• v.1 no.1
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• pp.35-43
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• 1997

Handling the emergency problems such as Chemobyl accident require real time prediction of pollutants dispersion. One-point real time sounding at pollutant source and simple model including turbulent-radiation process are very important to predict dispersion at real time. The stability categories obtained by one-dimensional numerical model (including PBL dynamics and radiative process) are good agreement with observational data (Golder, 1972). Therefore, the meteorological parameters (thermal, moisture and momentum fluxes; sensible and latent heat; Monin-Obukhov length and bulk Richardson number; vertical diffusion coefficient and TKE; mixing height) calculated by this model will be useful to understand the structure of stable boundary layer and to handling the emergency problems such as dangerous gasses accident. Especially, this simple model has strong merit for practical dispersion models which require turbulence process but does not takes long time to real predictions. According to the results of this model, the urban area has stronger vertical dispersion and weaker horizontal dispersion than rural area during daytime in summer season. The maximum stability class of urban area and rural area are 'A' and 'B' at 14 LST, respectively. After 20 LST, both urban and rural area have weak vertical dispersion, but they have strong horizontal dispersion. Generally, the urban area have larger radius of horizontal dispersion than rural area. Considering the resolution and time consuming problems of three dimensional grid model, one-dimensional model with one-point real sounding have strong merit for practical dispersion model.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.11
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• pp.968-972
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• 2008

Ni/Ti/Al multilayer system ('/'denotes the deposition sequence) was tested for low-resistance ohmic contact formation to Al-implanted p-type 4H-SiC. Ni 30 nm / Ti 50 nm / Al 300 nm layers were sequentially deposited by e-beam evaporation on the 4H-SiC samples which were implanted with Al (norminal doping concentration = $4\times10^{19}cm^{-3}$) and then annealed at $1700^{\circ}C$ for dopant activation. Rapid thermal anneal (RTA) temperature for ohmic contact formation was varied in the range of $840\sim930^{\circ}C$. Specific contact resistances were extracted from the measured current vs. voltage (I-V) data of linear- and circular transfer length method (TLM) patterns. In constrast to Ni contact, Ni/Ti/Al contact shows perfectly linear I-V characteristics, and possesses much lower contact resistance of about $2\sim3\times10^{-4}\Omega{\cdot}cm^2$ even after low-temperature RTA at $840^{\circ}C$, which is about 2 orders of magnitude smaller than that of Ni contact. Therefore, it was shown that RTA temperature for ohmic contact formation can be lowered to at least $840^{\circ}C$ without significant compromise of contact resistance. X-ray diffraction (XRD) analysis indicated the existence of intermetallic compounds of Ni and Al as well as $NiSi_{1-x}$, but characteristic peaks of $Ti_{3}SiC_2$, a probable narrow-gap interfacial alloy responsible for low-resistance Ti/Al ohmic contact formation, were not detected. Therefore, Al in-diffusion into SiC surface region is considered to be the dominant mechanism of improvement in conduction behavior of Ni/Ti/Al contact.