• 제목/요약/키워드: Thermal Accelerometer

검색결과 11건 처리시간 0.021초

Thermal Response Analysis of a Low Thermal Drift Three-axis Accelerometer for High Temperature Environments

  • Ishida Makoto;Lee Kyung Il;Takao Hidekuni;Sawada Kazuaki;Seo Hee Don
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2004년도 학술대회지
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    • pp.872-875
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    • 2004
  • In this paper, thermal response analysis of a temperature controlled three-axis accelerometer for high temperature environments with integrated micro-heaters and temperature sensors is investigated with finite element method (FEM) program, ANSYS and infrared thermal measurement systems. And availability to application fields from a viewpoint about short thermal response time is discussed. In this paper, the time of three-axis accelerometer for high temperatures becoming $300^{\circ}C$ by integrated micro-heaters and temperature sensors to reduce thermal drift characteristics was analyzed as a thermal response time of this device. The simulated thermal response time (time until SOI piezoresistors actually becomes $300^{\circ}C$) of three-axis accelerometer for high temperatures with ANSYS is about 0.6s, and measured result with infrared temperature measurement systems is about 0.64s. Experimental results using infrared thermal measurement systems agreed well with these theoretical results.

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열대류형 초소형 가속도계의 최적 설계 (Optimal Design of a Convective MEMS Accelerometer)

  • 박병규;김준원;문일권;김동식
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2008년도 추계학술대회A
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    • pp.1951-1956
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    • 2008
  • Various MEMS accelerometers are used in engineering applications including automobiles, mobile phones, military systems, and electronic devices. Among them, the thermal accelerometer employing the temperature difference induced by the convective flow inside the micro cavity has been a topic of interest. As the convective sensor does not utilize a solid proof mass, it is compact, lightweight, inexpensive to manufacture, sensitive and highly endurable to mechanical shock. However, the complexity of the convective flow and various design constraints make optimization of a device a crucial step before fabrication. In this work, optimization of a 2-axis thermal convective MEMS accelerometer is conducted based on 3-dimensional numerical simulation. Parametric studies are performed by varying the several design variables such as the heater shape/size, the cavity size and types of the gas medium and the position of temperature probes in the sensor. The results of optimal design are presented.

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열 대류 가속도계의 성능향상에 관한 연구 (A Study on the Performance Improvement of the Micromachined Convective Accelerometer)

  • 윤성기;오준석
    • 대한기계학회논문집A
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    • 제31권5호
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    • pp.570-577
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    • 2007
  • A micromachined convective accelerometer is a recently developed device. Typical micromachined accelerometers use a solid proof mass for measuring acceleration. But a micromachined convective accelerometer does not use a solid proof mass. A micromachined convective accelerometer is composed of a heating resistor and temperature sensors. This device measures acceleration by using convective heat transfer phenomenon. Therefore characteristics of a micromachined convective accelerometer are different as compared with typical micromachined accelerometer. In this research, we analyze the convective accelerometer by using transient convective heat transfer analysis. Based on the results of a convective accelerometer, we propose a new model which has improved performance.

SOI 구조 가속도센서의 온도 특성 해석 (Analysis of Temperature Characteristics on Accelerometer using SOI Structure)

  • 손미정;서희돈
    • 센서학회지
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    • 제9권1호
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    • pp.1-8
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    • 2000
  • 최근, 자동차가 점점 고급화 되어감에 따라 자동차엔진과 같이 $200^{\circ}C$ 이상의 고온과 부식적인 환경 하에 사용되어 질 수 있는 고성능의 실리콘 가속도센서의 장착이 기대되고 있다. 그러나 실리콘은 본질적으로 온도의 영향이 큰 물질이고, p-n 접합으로 압저항이 형성되기 때문에 $150^{\circ}C$ 이상이 되면 누설전류가 급격하게 증가하여 센서의 성능을 떨어뜨린다. 본 연구에서는 SOI 구조를 이용한 가속도센서의 온도특성을 해석하고, 유한요소법(finite element method)을 이용하여 감도 온도계수(TCS) 및 오프셋전압 온도계수(TCO)의 열잔류응력과의 관련성을 검토하였다. 그 결과, TCS는 압저항의 불순물 농도를 최적화함으로써 줄일 수 있고, TCO는 압저항의 열잔류응력과 불균일한 공정에 관계가 있다는 것을 알았다. 그리고 센서의 중앙지지구조에 있어서 패키징 열잔류응력의 평균값은 약 $3.7{\times}10^4Nm^{-2}^{\circ}C^{-1}$ 정도로 주변지지구조보다 1/10정도 작게 나타났다.

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범프 본딩된 압저항 실리콘 가속도센서의 제조 (Fabriaction of bump bounded piezoresistive silicon accelerometer)

  • 심준환;이상호;이종현
    • 전자공학회논문지D
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    • 제34D권7호
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    • pp.30-36
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    • 1997
  • Bump bonded piezoesistive silicon accelerometer was fabricated by the porous silicon micromachining and th eprocess technique of integrated circuit. The output voltage of the accelerometer fabricated on (111)-oreiented Si substrates with n/n$^{+}$n triple layers showed good linear characteristic of less than 1%. The measured sensitivity and the resonant frequency was about 743 .mu.V/g and 2.04 kHz, respectively. And the transverse sensitivity of 5.2% was measured from the accelerometer. Also, to investigate an influence on the output characteristics of the sensor due to bump bonding, the values of the piezoresistors were measured through thermal-cycling test in the temperature variation form -50 to 120.deg. C. Then, there was 0.014% resistance changes about 3.61 k.ohm., so sthe output charcteristics of the sensor was less affected by bump bonding.g.

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SOI웨이퍼를 이용한 마이크로가속도계 센서의 열응력해석(I) (Analyses Thermal Stresses for Microaccelerometer Sensors using SOI Wafer(I))

  • 김옥삼
    • 동력기계공학회지
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    • 제5권2호
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    • pp.36-42
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    • 2001
  • This paper deals with finite element analyses of residual stresses causing popping up which are induced in micromachining processes of a microaccelerometer sensors. The paddle of the micro accelerometer sensor is designed symmetric with respect to the direction of the beam. After heating the tunnel gap up to 100 degree and get it through the cooling process and the additional beam up to 80 degree and get it through the cooling process. We learn the thermal internal stresses of each shape and compare the results with each other, after heating the tunnel gap up to 400 degree during the Pt deposition process. Finally we find the optimal shape which is able to minimize the internal stresses of microaccelerometer sensor. We want to seek after the real cause of this pop up phenomenon and diminish this by change manufacturing processes of microaccelerometer sensor by electrostatic force.

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ESPI에 의한 인장하중 하에서의 복합재 적층판의 진동 거동에 관한 연구 (A Study on the Vibration Behavior of Composite Laminate under Tensile Loading by ESPI)

  • 양승필;김경석;정현철;장호섭;김종수
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2000년도 추계학술대회논문집A
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    • pp.516-521
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    • 2000
  • Most of studies, using ESPI method, have handled tension, thermal and vibration analysis, and is limited to isotropic materials. However, tension and vibration simultaneously are loaded in real structure. Also, almost study using ESPI method is locally limited to the analysis on the isotropic materials and a few studies on the anisotropic materials have reported. Existing methods, such as the accelerometer method and FEA method, to analyze vibration have some disadvantages. Using the accelerometer method that is generally used to analyze vibration phenomena, it is impossible to analyze vibration on the oscillating body and one can observe no vibration mode shape during experiment. In case of the FEA method, it is difficult to define boundary conditions correctly if the shape of a body tested is complex, and one can just obtain vibration mode shapes on the peak amplitude in each modes. In this study, plane plate of stainless steel(STS304), isotropic material, that is used as structural steel is analyzed about vibration characteristics under tension. Also, in the study of stainless steel, the characteristics of composite material(AS4/PEEK) used as high strength structural material in aircraft is evaluated about vibration under tension, and studies the effect of tension on vibration.

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관성 항법 장치급 서보 가속도계용 다단차 3차원 실리콘 미세 구조물 제작 (Fabrication of Multi-stepped Three Dimensional Silicon Microstructure for INS Grade Servo Accelerometer)

  • 이영주;이상훈;전국진;김용권;조동일
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1996년도 추계학술대회 논문집 학회본부
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    • pp.425-427
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    • 1996
  • New fabrication technique was developed to make three dimensional silicon microstructure with five fold vertical steps through entire wafer thickness. Each step is pre-defined on multiply stacked thermal oxide and silicon nitride (O/N) layers by photolithographies. Multi-stepped silicon microstructure is formed by anisotropic etch in aqueous KOH solution with the patterned nitride film as masking layer. Fabricated microstructure consists of four $16{\mu}m$ thick flexural spring beams, $290{\mu}m$ thick proof mass, mesas for overrange stop with $10{\mu}m$ height from the surface of the proof mass, and the other mesas and V grooves used for assembling this structure to the packaging frame of pendulous servo accelerometer. Using the numerical finite element method (FEM) simulator: ABAQUS, mechanical characteristics of the fabricated microstructure by the developed technique was compared with those of the same structure processed by one step silicon bulk etch followed by oxidation and patterning the etched region.

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