• The Transactions of the Korean Institute of Electrical Engineers P
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• v.51 no.2
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• pp.77-81
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• 2002

In this study, PZT thin films were fabricated using sol-gel processing onto Si/$SiO_2$/Ti/Pt substrates. PZT sol with different Zr/Ti ratio(20/80, 30/70, 40/60, 52/48) were prepared, respectively. The films were fabricated by using the spin-coating method on substrates. The films were heat treated at $450^{\circ}C$, $650^{\circ}C$ by rapid thermal annealing(RTA). The preferred orientation of the PZT thin films were observed by X-ray diffraction(XRD), and Scanning electron microscopy(SEM). All of the resulting PZT thin films were crystallized with perovskite phase. The fine crystallinity of the films were fabricated. Also, we found that the ferroelectric properties from the dielectric constant of the PZT thin films were over 600 degrees, P-E hysteresis constant. And the leakage current densities of films were lower than $10^{-8}A/cm^2$. It is concluded that the PZT thin films by sol-gel process to be convinced of application for ferroelectric memory device.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.183-189
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• 1992

The characteristics of N/O(SiOz/SisN4) film on WSi2 are compared with storage node Poly-Si. Leakage current and breakdown voltage are improved and storage capacitance is decreased. The oxidation rate of WSiz is more rapid than polycrystalline silicon. Thus the thick bottom oxide on the WSiz causes to the decrease of capacitance. The out diffusion of dopant impurity in polycrystalline silicon through the silicide leads to the formation of a depletion region in the polycrystalline silicon and the decrease of depletion capacitance. That results in the decrease of the overall storage capacitance.

• Proceedings of the KIPE Conference
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• 2015.07a
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• pp.195-196
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• 2015

This paper investigates the design of coupled inductor for minimum inductor current ripple in rapid traction battery charger systems. Based on the general circuit model of coupled inductor together with the operating principles of dc-dc converter, the relationship between the ripple size of inductor current and the coupling factor is derived under the different duty ratio. The optimal coupling factor which corresponds to a minimum inductor ripple current becomes -0.5, i.e. a complete inverse coupling without leakage inductance, as the steady-state duty ratio operating point approaches 1/3 or 2/3. In an opposite manner, the optimal coupling factor value of zero, i.e. zero mutual inductance, is required when the steady-state duty ratio operating point approaches either zero or one. Coupled inductors having optimal coupling factor can minimize the ripple current of inductor and battery current resulting in a reliable and efficient operation of battery chargers.

• Proceedings of the KIPE Conference
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• 2017.07a
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• pp.88-89
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• 2017

This paper investigates the design of multi-winding coupled inductor for minimum inductor current ripple in rapid traction battery charger systems. Based on the general circuit model of multi-winding coupled inductor together with the operating principles of dc-dc converter, the relationship between the ripple size of inductor current and the coupling factor is derived under the different duty ratio. The optimal coupling factor which corresponds to a minimum inductor ripple current becomes -(1/n-1), i.e. a complete inverse coupling without leakage inductance, as the steady-state duty ratio operating point approaches 1/n, 2/n, … or (n1)/n. In an opposite manner, the optimal coupling factor value of zero, i.e. zero mutual inductance, is required when the steady-state duty ratio operating point approaches either zero or one.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.5
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• pp.399-402
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• 2007

The effects of heat treatment on the electrical properties of strained-Si/SiGe-on-insulator (SGOI) devices were examined. We proposed the optimized heat treatment processes for improving the back interfacial electrical properties in SGOI-MOSFET. By applying the additional pre-RTA (rapid thermal annealing) before gate oxidation step and the post-RTA after source/drain dopant activation step, the electrical properties of strained-Si channel on $Si_{1-x}Ge_x$ layer were greatly improved, which resulting the improvement of the driving current, transconductance, and leakage current of SGOI-MOSFET.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.7-8
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• 2006

The effects of heat treatment on the electrical properties of SGOI were examined. We proposed the optimized heat treatments for improving the interfacial electrical properties in SGOI-MOSFET. By applying the additional pre-RTA(rapid thermal annealing) before gate oxidation and post-RTA after dopant activation, the driving current, the transconductance, and the leakage current were improved significantly.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.677-680
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• 1999

Rapid developing automation technology enhances the need of sensors. Among many materials, silicon has the advantages of electrical and mechanical property, Single-crystalline silicon has different piezoresistivity on 야fferent directions and a current leakage at elevated temperature, but poly-crystalline silicon has the possibility of controling resistivity using dopping ions, and operation at high temperature, which is grown on insulating layers. Each wafer has slightly different thicknesses that make difficult to obtain the precisely same thickness of a diaphragm. This paper deals with the fabrication process to make poly-crystalline silicon based pressure sensors which includes diaphragm thickness and wet-etching techniques for each layer. Diaphragms of the same thickness can be fabricated consisting of deposited layers by silicon bulk etching. HF etches silicon nitride, HNO$_3$+HF does poly -crystalline silicon at room temperature very fast. Whereas ethylenediamice based etchant is used to etch silicon at 11$0^{\circ}C$ slowly.

• Proceedings of the Korean Institute of Building Construction Conference
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• 2020.06a
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• pp.12-13
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• 2020

Construction projects and buildings are becoming taller and larger, and the size of water tanks of production facilities and high-rise buildings is also gradually increasing. Most large water tanks apply a waterproofing layer to the water tank type concrete structure. The application of polyurea coating materials, which are excellent in water resistance, chemical resistance, physical performance, rapid hardening, and workability is gradually increasing as waterproofing and anticorrosion layer for water tank. As a result, defects such as water leakage and damage to the waterproofing layer are continuously occurring, causing production disruption, setback to users. Therefore, it is required to review suitability through performance verification of the waterproofing and anticorrosion system.

• Archives of Reconstructive Microsurgery
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• v.23 no.1
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• pp.36-39
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• 2014

Extravasation injury refers to leakage of corrosive liquids from veins, resulting in tissue damage. The authors report on a case of extravasation injury to the left hand after administration of fluid to the antecubital area in a patient with brain damage. In order to minimize the effects of extravasation injury, rapid diagnosis and management are needed. In patients with stiffness, pressure sores can develop requiring more careful management by the medical staff.

• Journal of the Korean Ceramic Society
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• v.31 no.10
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• pp.1115-1122
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• 1994

ZT/PZT/ZT multi-layered thin films were deposited on silicon substrate by co-sputtering method for FEMFET device application. Effects of Pb/(Zr+Ti) ratio, films thickness, annealing conditions and substrate temperature on the ferroelectric behavior of the multi-layered films were studied. The best memory device characteristics with leakage current of 2$\times$10-8 A/$\textrm{cm}^2$ and breakdown field of about 1 MV/cm could be obtained with ZT(250 $\AA$) / PZT(1000 $\AA$)/ZT(750 $\AA$) multi-layered thin film deposited at 35$0^{\circ}C$ and post-annealed at $700^{\circ}C$ for 120 sec by RTA(Rapid Thermal Annealing).