• Journal of the Optical Society of Korea
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• v.18 no.5
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• pp.453-458
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• 2014

A novel high birefringent polymer terahertz (THz) fiber with a suspended elliptical core is proposed in this paper. The introduction of an elliptical core can enhance asymmetry to realize high mode birefringence, and a large porous outer cladding effectively isolates the core-guided mode from interacting with the surrounding environment. A full-vector finite element method(FEM) is used to analyze the characteristics of the THz fiber. Simulation results show that the suspended elliptical fiber exhibits high mode birefringence on a level of $10^{-2}$ over a wide frequency range, and an extremely large mode birefringence(${\approx}0.06226$) is obtained when ellipticity is 0.2. Moreover, a suspended hollow elliptical core fiber is also discussed for the purpose of lower loss, however high mode birefringence and low relative absorption loss can not coexist in such a kind of fiber.

• Journal of the Optical Society of Korea
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• v.17 no.5
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• pp.454-460
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• 2013

We present qualitative and quantitative component analyses on compound explosives via Terahertz time-domain spectroscopy (THz-TDS) based on a combination of wavelet thresholding and wavelength selection. Despite its importance, the field of signal processing of THz signals of compound plastic explosives is relatively unexplored. In this paper, experiment results from explosives Composition B-3 and Pentolite are newly presented, suggesting a novel signal processing procedure for in situ compound explosives detection. The proposed signal processing method demonstrates effective component analysis even in noisy and humid environments, showing significant decrease in component concentration percentage error of approximately 22.7% for Composition B-3 and 48.8% for Pentolite.

• Current Optics and Photonics
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• v.2 no.3
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• pp.215-220
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• 2018

A novel porous-core hexagonal lattice photonic crystal fiber (PCF) is designed and analyzed for efficient terahertz (THz) wave propagation. The finite element method based Comsol v4.2 software is used for numerical analysis of the proposed fiber. A perfectly matched layer boundary condition is used to characterize the guiding properties. Rectangular air-holes are used inside the core to introduce asymmetry for attaining high birefringence. By intentionally rotating the rectangular air holes of porous core structure, an ultrahigh birefringence of 0.045 and low effective material loss of $0.086cm^{-1}$ can be obtained at the operating frequency of 0.85 THz. Moreover, single-mode properties, power fraction in air core and confinement loss of the proposed PCF are also analyzed. This is expected to be useful for wideband imaging and telecom applications.

• Journal of the Optical Society of Korea
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• v.15 no.1
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• pp.103-108
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• 2011

Recently reported asynchronous-optical-sampling terahertz (THz) time-domain spectroscopy enables high-resolution spectroscopy due to a long time-delay window. However, a long-lasting tail signal following the main pulse is often measured in a time-domain waveform, resulting in spectral fluctuation above a background noise level on a high-resolution THz amplitude spectrum. Here, we adopt the wavelet power spectrum estimation technique (WPSET) to effectively remove the spectral fluctuation without sacrificing spectral features. Effectiveness of the WPSET is verified by investigating a transmission spectrum of water vapor.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.205-205
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• 2013

테라헤르쯔(terahertz: THz)파는 0.1~10 THz 의 범위로 적외선과 방송파 사이에 광대역 주파수 스펙트럼을 차지하고 있으며 직진성, 투과성, 그리고 낮은 에너지 (meV)를 가지고 있어 비 파괴적이고 무해한 장점을 지니고 있다. Ti:sapphire laser와 같은 femto-pulse source 등이 많은 발전이 되어 현재 많은 연구와 발전이 이루어지고 있다. femto-pulse source를 이용한 THz 응용에서는 높은 저항, 큰 전자 이동도, 그리고 아주 짧은 전하수명의 기판을 요구하는데 저온에서 성장한 (low-temperature grown : LT) GaAs는 격자 내에 Gallium 자리에 Arsenic이 치환 하면서 AsGa antisite가 발생하여 전하수명을 짧아지는 것을 응용하여 가장 많이 이용되고 있다. 현재 THz 응용분야에서 보다 작고 가격경쟁력이 있는 광통신을 이용한 THz photomixer등이 활발히 연구 하고 있다. 광섬유 내에서 손실과 분산이 최소값을 가지는 부분이 1.55 ${\mu}m$ 부근이고 In0.53Ga0.47As 기판을 이용하였을 때 여기에 완벽하게 만족하게 된다. 하지만 LT-InGaAs 의 경우 AsGa antisite로 인하여 carrier lifetime은 짧아지지만 높은 n-type 전하밀도를 가지게 된다. 이때 Be을 doping하여 전하밀도를 보상하여 높은 저항을 유지해야 하는데 Be의 활성화를 위해서는 열처리를 필요로 한다. 하지만 열처리를 하면 carrier lifetime이 길어지기 때문에 carrier lifetime과 저항을 적절히 조율해야 한다. 이는 물질자체의 특성이기 때문에 InGaAs는 GaAs보다 낮은 amplitude와 짧은 cut-off frequency를 가진다. 본 연구에서는 보다 높은 저항을 얻기 위하여 molecular beam epitaxy를 이용하여 semi-insulating InP:Fe 기판위에 격자 정합된 InGaAs:Be/InAlAs multi quantum well (MQW)를 온도별 ($250{\sim}400^{\circ}C$), 주기별 (50~150)로 성장을 하였고 이때 InGaAs layer의 Be doping level은 $2{\times}1018\;cm^{-3}$, Ex-situ annealing은 $550^{\circ}C$에서 10분으로 고정 하였다. THz 발생 실험에서는 InGaAs/InAlAs MQW은 4000 pA로 1,000 pA를 가지는 InGaAs epilayer보다 4배 높은 전류 신호를 얻을 수 있었고 모든 샘플이 2 THz에서 cut-off frequency를 가지고 있었다. THz 검출 실험에서는 LT-InGaAs:Be epilayer LT-InGaAs:Be/InAlAs, HT-InGaAs/InAlAs 샘플이 각각 180, 9000, 12000 pA의 전류신호를 가지고 있었고 모든 샘플이 2 THz에서 cut-off frequency를 가지고 있었다. HT-InGaAs/InAlAs MQW를 이용한 검출실험에서는 InGaAs layer가 defect free이지만 LT-InGaAs:Be/ InAlAs MQW 보다 높은 전류 신호를 얻을 수 있었다. 이는 InAlAs layer가 저항만 높이는 것뿐만 아니라 carrier trapping layer로써의 역할도 하는 것으로 사료된다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.11
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• pp.745-750
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• 2017

Terahertz time-domain spectroscopy has been used to study the optical properties of $Pr^{3+}-doped$ selenide glasses. The complex refractive indexes of $Pr^{3+}-selenide$ glasses were measured in a frequency range from 0.3 to 1.5 THz. The real and imaginary refractive indexes increased with increasing frequency and $Pr^{3+}$ ion concentration. The obtained result indicated that the phonon modes of the $Pr^{3+}-doped$ selenide glasses shift to lower frequencies with the concentration of $Pr^{3+}$ ions. The theory of far-infrared absorption in amorphous materials was used to analyze the results. The measured data showed that the disorder-induced terahertz absorption increased with increasing $Pr^{3+}$ ion concentration.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.11 no.1
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• pp.102-122
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• 2017

Nanotechnology has provided a set of tools that the engineers can use to design and manufacture integrated nano devices, which are capable of performing sensing, computing, data storing and actuation. One of the main hurdles for nano devices has been the amount of power that it can generate for transmission of data. In this paper, we proposed cooperative nano communication in the Terahertz (THz) Gap frequency band to increase the range of transmission. Outage probability (OP) performances for the proposed cooperative nano communication networks in the THz band (0.1 - 10THz) have been evaluated for the following scenarios; A) A single decode-and-forward (DF) relay over independent identically distributed (i.i.d.) Rayleigh fading channels, B) DF multi-relay network with best relay selection (BRS) over i.i.d. Rayleigh fading channels, and C) DF multi-relay network with multiple hops with BRS over i.i.d. Rayleigh fading channels. The results show that the transmission distance can be improved significantly by employing DF relays. Also, it is shown that by increasing the number of hops in a relay the OP performance is marginally degraded. The analytical results have been verified by Monte-Carlo simulation.

• Current Optics and Photonics
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• v.6 no.3
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• pp.252-259
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• 2022

In this paper, a dual-function dynamically tunable metamaterial absorber is proposed. At frequency points of 1.545 THz and 3.21 THz, two resonance peaks with absorption amplitude of 93.8% (peak I) and 99.4% (peak II) can be achieved. By regulating the conductivity of photosensitive silicon with a pump laser, the resonance frequency of peak I switches to 1.525 THz, and that of peak II switches to 2.79 THz. By adjusting the incident polarization angle by rotating the device, absorption amplitude tuning is obtained. By introducing two degrees of regulation freedom, the absorption amplitude modulation and resonant frequency switching are simultaneously realized. More importantly, dynamic and continuous adjustment of the absorption amplitude is obtained at a fixed resonant frequency, and the modulation depth reaches 100% for both peaks. In addition, the sensing property of the proposed MMA was studied while it was used as a refractive index sensor. Compared with other results reported, our device not only has a dual-function tunable characteristic and the highest modulation depth, but also simultaneously possesses fine sensing performance.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.161-161
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• 2012

본 연구에서는 InGaAs을 이용한 테라헤르쯔(THz) 발생과 검출 특성을 GaAs에 의한 특성과 비교, 조사하였다. 고온성장(HTG, $530^{\circ}C$) InGaAs를 이용하여 photo-Dember (pD) 효과(표면방출)에 의한 THz 발생 특성을 조사하였으며, THz 검출 특성에는 저온성장(LTG, $530^{\circ}C$) InGaAs: Be을 이용하였다. HTG-InGaAs 기판 위에 패턴한 금속전극 (Ti/Au, ${\sim}500{\times}500{\mu}m$)의 가장자리에 Ti: Sapphire fs 펄스 레이저(30 ps/90 MHz)를 조사하여 LTG-GaAs 수신기(Rx)로 THz를 검출, 전류신호(a)와 Fourier transform (FT) 주파수 스펙트럼(b)을 얻었다. HTG-InGaAs에서 얻은 파형은 SI-GaAs에서와 거의 비슷한 모양이었으나, 주파수 범위(0.5~2 THz)는 SI-GaAs의 1~3 THz 보다 좁고 FT 스펙트럼의 세기는 약 1/8 정도로 낮았다. LTG-InGaAs 수신기 (Rx)의 안테나는 쌍극자 ($5/20{\mu}m$) 형태를 가지고 있으며, SI-GaAs Tx로 발생시킨 광원을 사용하여 THz 영역의 검출 특성을 조사하였다. HTG-InGaAs Tx 및 LTG-InGaAs Rx의 이득은 각각 약 $5{\times}10^{-8}$ A/W과 $2.5{\times}10^{-8}$ A/W인 것으로 분석되었다.

• Proceedings of the Optical Society of Korea Conference
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• 2002.07a
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• pp.172-173
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• 2002

As feature sizes of circuits and devices approach 100 m and chip frequencies climb into the upper gigahertz to terahertz range, it becomes increasingly important to have a convenient method of characterizing properties of thin dielectric films in the GHz to THz frequency range [1]. To measure the dielectric and optical properties of materials at THz frequency, a TH2 time-domain spectroscopy has been utilized during past decade. (중략)