• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.6
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• pp.72-78
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• 1998

An optical modulator Ti:LiNbO$_3$optical waveguide and CPW electrode structure were fabricated. The optical modulator was packaged using components such as ferrules, dirmy LN block and glass, vibration and shock absorbption pad, and alumina feeder through processings of pigtailing. Au wire bonding, epoxing, SMA connecting, sealing. The electrical and optical characteristics were measured after packaging. The electrical properties of S$_{21}$ and S$_{11}$ were obtained as 9.8 GHz at -3 dB and -8.9dB at 14.4GHz, respectively. Optical waveguide prepared met requirements for a single mode at a 1550nm wavelength range. Insertion loss was 4.3dB at room temperature after packaging, and was varied 4.3~6.4dB at various temperatures, 5~45$^{\circ}C$. E-O bandwidth measurement showed 3dB optical response at 7.8GHz, which means that it is applicable for 10Gbps optical communicationon

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.12
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• pp.80-90
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• 1994

To develop VLSI of higher packing density with 0.5.mu.m gate length of less, semiconductor devices require shallow junction with higher doping concentration. the most common method to form the shallow junction is ion implantation, but in order to remove the implantation induced defect and activate the implanted impurities electrically, ion-implanted Si should be annealed at high temperature. In this annealing, impurities are diffused out and redistributed, creating deep PN junction. These make it more difficult to form the shallow junction. Accordingly, to miimize impurity redistribution, the thermal-budget should be kept minimum, that is. RTA needs to be used. This paper reports results of the diffusion characteristics of PSG film by varying Phosphorus weitht %/ Times and temperatures of RTA. From the SIMS.ASR.4-point probe analysis, it was found that low sheet resistance below 100 .OMEGA./ㅁand shallow junction depths below 0.2.mu.m can be obtained and the surface concentrations are measured by SIMS analysis was shown to range from 2.5*10$^{17}$ aroms/cm$^{3}$~3*10$^{20}$ aroms/cm$^{3}$. By depending on the RTA process of PSG film on Si, LDD-structured nMOSFET was fabricated. The junction depths andthe concentration of n-region were about 0.06.mu.m. 2.5*10$^{17}$ atom/cm$^{-3}$ , 4*10$^{17}$ atoms/cm$^{-3}$ and 8*10$^{17}$ atoms/cm$^{3}$, respectively. As for the electrical characteristics of nMOS with phosphorus junction for n- region formed by RTA, it was found that the characteristics of device were improved. It was shown that the results were mainly due to the reduction of electric field which decreases hot carriers.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.36C no.12
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• pp.90-97
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• 1999

Recently, there have been many researches to automate processing and analysing image data in medical field, due to the advance of image processing techniques, the fast communication network and high performance hardware. In this paper, we design and implement the system based on the multi-layer neural network model to be able to analyze, differentiate and count blood cells in the peripheral blood image. To do these, we segment red and white-blood cell in blood image acquired from microscope with CCD(Charge-coupled device) camera and then apply the various feature extraction algorithms to classify. In addition to, we reduce multi-variate feature number using PCA(Principle Component Analysis) to construct more efficient classifier. So, in this paper, we are sure that the proposed system can be applied to a pathological guided system.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.2
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• pp.52-59
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• 1998

The ZnS:Mn thin film electroluminescent(TFEL) devices fabricated by ALE system were investigated. Yellow-orange light emission was observed when the applied voltage exceeded 134 V and luminance increased sharply as the applied voltage increased. Luminance of 568 Cd/c $m^{2}$ was obtained under 1 KHz sinusoidal voltage wave application at the peak applied voltage of 230 V. The peak wavelength of the emissionwas 577 nm. The C-V, Q-V, $Q_{t}$ - $F_{p}$ , L- $Q_{cond}$, and V- $Q_{pol}$ have been measured under theapplication of the trapezoidal wave with its pulse width varying 0 to 75 .mu.sec. The phoshor and the insulator capacitance of the TFEL device under test were 24.3 nF/c $m^{2}$ and 9 nF/c $m^{2}$, respectively. It was observed that the threshold voltage changed from 137V to 100V as the pulse width varied from 0 to 75 .mu.sec. The L- $Q_{cond}$ characteristics showed that the light emission increased in proportion to the $Q_{cond}$. The luminance increased from 386 Cd/ $m^{2}$ to 607 Cd/ $m^{2}$ when the $Q^{+}$$_{cond}$ increased from 1.3 .mu.C/c $m^{2}$ to 2.3 .mu.C/c $m^{2}$. The V- $Q_{pol}$ characteristics showed that the V was inversely proportional to $Q_{pol}$./. th/ was inversely proportional to $Q_{pol}$./. pol/./.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.12
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• pp.89-100
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• 1997

This paper investigated a new type of low voltage threshold switch (LVTS). As distinguished from the many other types of electronic threshold switches, the LvTS is ; voltage controlled, occurs at low voltages ($V_{2}$ $O_{5}$lV devices. The average low threshold voltage < $V_{LVT}$>=218 mV (standard deviation =24mV~kT/q, where T=300K), and was independent of the device area (x100) and amorphous oxide occurred in an ~22.angs. thick interphase of the V/amorphous- $V_{2}$ $O_{5}$ contacts. At $V_{LVT}$ there was a transition from an initially low conductance (OFF) state into a succession of quantized states of higher conductance (ON). The OFF state was spatically homogeneous and dominated by tunneling into the interphase. The ON state conductances were consistent with the quantized conductances of ballistic transport through a one dimensional, quantum point contact. The temeprature dependence of $V_{LVT}$, and fit of the material parameters (dielectric function, barrier energy, conductivity) to the data, showed that transport in the OFF and ON states occurred in an interphase with the characteristics of, respectively, semiconducting and metallic V $O_{2}$. The experimental results suggest that the LVTS is likely to be observed in interphases produced by a critical event associated with an inelastic transfer of energy.rgy.y.rgy.

• Journal of the Korean Institute of Telematics and Electronics S
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• v.35S no.6
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• pp.137-146
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• 1998

Recently many devices print electronic images in a variety of ways. The reproduced color, however, is different from the original color because of the difference of hardware characteristics. To maintain device independent color, gamut mapping method is proposed. The proposed color gamut mapping uses nonlinear intensity mapping and clipping for saturation mapping on HSI color space. In the dithering operation, expanded nonlinear ordered dithering and modified error diffusion are proposed. The proposed ordered dithering uses expanded nonlinear quantization which considers overlapping phenomena of neighbored printing dots. In the modified error diffusion, quantization errors to be diffused are adjusted to improve both image blur and color change produced in the error diffusion. So, the printed image is similar to the image of monitor. Our results indicate that proposed algorithm can produce high quality image in the low bit color devices.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.2
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• pp.88-93
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• 1994

We fabricated a large-scale photovoltaic device for detecting-3-5$\mu$m IR, by forming of n$^{+}$-p junction in the $Hg_{1-x}Cd_{x}$Te (MCT) layer which was grown by LPE on CdTe substrate. The composition x of the MCT epitaxial layer was 0.295 and the hole concentration was 1.3${\times}10^{13}/cm^{4}$. The n$^{+}$-p junction was formed by B+ implantation at 100 keV with a does 3${\times}10^{11}/cm^{2}. The n$^{+}$ region has a circular shape with 2.68mm diameter. The vacuum-evaporated ZnS with resistivity of 2${\times}10^{4}{\Omega}$cm is used as an insulating layer over the epitaxial layer. ZnS plays the role of the anti-reflection coating transmitting more than 90% of 3~5$\mu$m IR. For ohmic contacts, gole was used for p-MCT and indium was used for n$^{+}$-MCT. The fabrication took 5 photolithographic masks and all the processing temperatures of the MCT wafer were below 90$^{\circ}C$. The R,A of the fabricated devices was 7500${\Omega}cm^{2}$. The carrier lifetime of the devices was estimated 2.5ns. The junction was linearly-graded and the concentration slope was measured to be 1.7${\times}10^{17}/{\mu}m$. the normalized detectivity in 3~5$\mu$m IR was 1${\times}10^{11}cmHz^{12}$/W, which is sufficient for real application.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.2
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• pp.47-54
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• 1990

In this paper, we design the 4-bit phase shifter which have $22.5^{\circ},45^{\circ},90^{\circ}$ and $180^{\circ}$ phase shift by applying the loaded line and switched network phase shifter. Its phase shift is variable with changing of the stub and passive device parameters. The experiments show the 6.5 dB average insertion loss and $10^{\circ}$ average phase error at center frequency, 6GHz. The results of experiment agree well with the theories except $180^{\circ}$ phase shifter.

• Journal of Korean Society for Geospatial Information Science
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• v.16 no.3
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• pp.29-34
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• 2008

Demand for car navigation systems has been an explosive increase because of prevalence of owner-drivers, spare time spread, and so on. In addition, car navigation systems are achieving a rapid growth to be the important part of telematics industry with services such as real-time traffic information and DMB(Digital Multimedia Broadcasting). The network data, one of the composition components in car navigation systems, is most important component because that is abstract of real world road network and base data in pathfinding. However most of the car navigation systems have been stand-alone system. Thus user's network data becomes outdated according to the time passing and does not reflect the change of road information in real world. To overcome this problem, users have to update network data in car navigation systems periodically. This method is quite cumbersome process. For this reason, this study proposed a new update method to serve the difference network data on user's device and the real world in real time, and simulated to verify.

• Journal of the Korean Institute of Telematics and Electronics S
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• v.36S no.1
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• pp.38-50
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• 1999

Currently many devices reproduce electronic images in the various ways. However the color that is reproduced in any device is different from the original color due to the difference in the gamut between devices. In this paper, an image dependent gamut mapping method is proposed. This method clips the chroma with compensating for the change of lightness caused by the lightness scaling. The anchor point, which is the center point in the mapping, is set as a lower point by the proposed method than a point by the conventional mapping method. This reduces the color difference between point. In addition, to heighten the color contrast on the constant hue, the different two mapping methods are applied to the printer gamut which is divided in two region, bright region and dark region. Consequently, the printer output image was highly consistent with the corresponding monitor image.