• Title/Summary/Keyword: Technology Leakage

Search Result 1,687, Processing Time 0.031 seconds

Ageing Diagnostics in Oil Transformer for Large Capacity due to Test methods (시험방법에 의한 대용량 유입변압기의 열화진단)

  • Sim, Yoon-Tae;Kim, Wang-Gon;Hong, Jin-Woong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2003.07a
    • /
    • pp.96-99
    • /
    • 2003
  • In this paper, ageing diagnostics in the large capacity oil transformer are investigated. Following items are investigated for the ageing diagnostic in transformer oils (leakage current of sensor, power consumption and temperature of transformer oil). All temperature data are gathered from daily report in the substation. The power consumption of transformer are gathered output report of APIS(Airport Power Information System). Especially, data of sensor leakage current are accumulated from the online diagnostic system for transformer oil. The temperature of transformer oils major change factor was ambient temperature and capacity of power load. The leakage current are change by oil temperature. The leakage current ware not more than 2 [nA] in summer,

  • PDF

Correlation between Capacitance and Structure-optical Properties of Semiconductor with Zero Leakage Current (누설전류 Zero인 반도체 물질의 구조적 광학적 특성과 전도성과의 상관성)

  • Yun, Tae Hwan;Oh, Teresa
    • Journal of the Semiconductor & Display Technology
    • /
    • v.14 no.3
    • /
    • pp.27-31
    • /
    • 2015
  • It was the electrical properties of ZnS treated by the annealing in a vaccum and an atmosphere conditions to reseached the leakage current effect of semiconductor devices. Most samples were shown the non-linear with unipolar properties, but the ZnS annealed at $100^{\circ}C$ in a vaccum was only observed no leakage current in a range of -20 V< voltage < 15 V. The crystallinity of ZnS with no leakage current was improved and optical property was also improved. Because the ambipolar characteristics and low leakage currents originated from the extension effect of a depletion width by electron-hole combination in the depletion layer.

A Zero Voltage Switching Phase Shift Full Bridge Converter with Separated Primary Winding

  • Kim, Young-Do;Kim, Chong-Eun;Cho, Kyu-Min;Park, Ki-Bum;Cho, In-Ho;Moon, Gun-Woo
    • Proceedings of the KIPE Conference
    • /
    • 2008.06a
    • /
    • pp.379-381
    • /
    • 2008
  • Generally additional leakage inductance and two clamp diodes are adopted into the conventional phase shift full bridge (PSFB) converter for reducing the voltage stress of secondary rectifier diodes and extending the range of zero voltage switching (ZVS) operation. However, since additional leakage inductance carries the ac current similar to the primary one, the core and copper loss oriented from additional leakage inductance can be high enough to decrease the whole efficiency of DC/DC converter. Therefore, in this paper, a new ZVS phase shift full bridge converter with separated primary winding (SPW) is proposed. Proposed converter makes the transformer and additional leakage inductor with one ferrite core. Using this method, leakage inductance is controlled by the winding ratio of separated primary winding. Moreover, by manufacturing the both magnetic components with one core, size and core loss can be reduced and it turns out the improvement of efficiency and power density of DC/DC converter. The operational principle of proposed converter is analyzed and verified by the 1.2kW prototype.

  • PDF

Development of Oil Leakage Stability Evaluation for Composite Aterproofing Methods using Asphalt Mastic and Modified Asphalt Sheet in Concrete Structure (콘크리트 구조물에 사용되는 개량아스팔트 시트와 아스팔트 매스틱을 복합화한 방수공법의 누유안정성 평가방법 개발)

  • Park, Jin-Sang;Kim, Dong-Bum;Park, Wan-Goo;Kim, Byoung-Il;Oh, Sang-Keun
    • Journal of the Korea Institute of Building Construction
    • /
    • v.19 no.1
    • /
    • pp.19-29
    • /
    • 2019
  • In this study, a revised oil leakage evaluation method for assessing oil leakage stability of asphalt mastics used in upper slabs of below-grade residential parking lots was developed and presented. In order to verify the reliability and reproducibility of leakage results, the parameters the revised evaluation was carried out for three products with actual leakage history, and it was confirmed the leaks could be reproduced whereas the existing methods could not. To quantitatively verify the reproducibility, the filler content of the leaked samples was derived and the maximum filler content was 64% lower than that of the normal sample. The same results was found with the samples from the actual leakage site, thus verifying the reliability of the revised evaluation method.

Introduction to Industrial Applications of Low Power Design Methodologies

  • Kim, Hyung-Ock;Lee, Bong-Hyun;Choi, Jung-Yon;Won, Hyo-Sig;Choi, Kyu-Myung;Kim, Hyun-Woo;Lee, Seung-Chul;Hwang, Seung-Ho
    • JSTS:Journal of Semiconductor Technology and Science
    • /
    • v.9 no.4
    • /
    • pp.240-248
    • /
    • 2009
  • Moore's law has driven silicon technology scale down aggressively, and it results in significant increase of leakage current on nano-meter scale CMOS. Especially, in mobile devices, leakage current has been one of designers' main concerns, and thus many studies have introduced low power methodologies. However, there are few studies to minimize implementation cost in the mixed use of the methodologies to the best of our knowledge. In this paper, we introduce industrial applications of low power design methodologies for the decrease of leakage current. We focus on the design cost reduction of power gating and reverse body bias when used together. Also, we present voltage scale as an alternative to reverse body bias. To sustain gate leakage current, we discuss the adoption of high-$\kappa$ metal gate, which cuts gate leakage current by a factor of 10 in 32 nm CMOS technology. A 45 nm mobile SoC is shown as the case study of the mixed use of low power methodologies.

MTCMOS Post-Mask Performance Enhancement

  • Kim, Kyo-Sun;Won, Hyo-Sig;Jeong, Kwang-Ok
    • JSTS:Journal of Semiconductor Technology and Science
    • /
    • v.4 no.4
    • /
    • pp.263-268
    • /
    • 2004
  • In this paper, we motivate the post-mask performance enhancement technique combined with the Multi-Threshold Voltage CMOS (MTCMOS) leakage current suppression technology, and integrate the new design issues related to the MTCMOS technology into the ASIC design methodology. The issues include short-circuit current and sneak leakage current prevention. Towards validating the proposed techniques, a Personal Digital Assistant (PDA) processor has been implemented using the methodology, and a 0.18um process. The fabricated PDA processor operates at 333MHz which has been improved about 23% at no additional cost of redesign and masks, and consumes about 2uW of standby mode leakage power which could have been three orders of magnitude larger if the MTCMOS technology was not applied.

Investigation on Flashover Development Mechanism of Polymeric Insulators by Time Frequency Analysis

  • Muniraj, C.;Krishnamoorthi, K.;Chandrasekar, S.
    • Journal of Electrical Engineering and Technology
    • /
    • v.8 no.6
    • /
    • pp.1503-1511
    • /
    • 2013
  • This paper deals with the analysis of leakage current characteristics of silicone rubber insulator in order to develop a new condition monitoring tool to identify the flashover of outdoor insulators. In this work, laboratory based pollution performance tests are carried out on silicone rubber insulator under ac voltage at different pollution levels and relative humidity conditions with sodium chloride (NaCl) as a contaminant. Min-Norm spectral analysis is adopted to calculate the higher order harmonics and Signal Noise Ratio (SNR). Choi-Williams Distribution (CWD) function is employed to understand the time frequency characteristics of the leakage current signal. Reported results on silicone rubber insulators show that the flashover development process of outdoor polymer insulators could be identified from the higher order harmonics and signal noise ratio values of leakage current signals.

A Study on Implementation Method of ECM-based Electronic Document Leakage Prevention System through Security Area Location Information Management (보안구역 위치정보 관리를 통한 ECM기반 전자문서유출방지 시스템 구현방안 연구)

  • Yoo, Gab-Sang;Cho, Seung-Yeon;Hwang, In-Tae
    • Journal of Information Technology Services
    • /
    • v.19 no.2
    • /
    • pp.83-92
    • /
    • 2020
  • The current technology drain at small and medium-sized enterprises in Korea is very serious. According to the National Intelligence Service's survey data, 69 percent of technology leaks are made through employees of small and medium-sized enterprises. A document security system was introduced to compensate for the problem. However, small and medium-sized enterprises are not doing well due to their poor environment. Therefore, it proposes a document security system suitable for small businesses by developing a location information machine learning system that automatically creates a document security Green Zone through learning, and an ECM-based electronic document leakage prevention system that manages generated Green Zone information by reflecting it into the document authority system. And step by step, propose a universal solution through cloud services..

A Study on The Countermeasure by The Types through Case Analysis of Industrial Secret Leakage Accident (산업기밀 유출사고 사례분석을 통한 유형별 대응방안 연구)

  • Chang, Hangbae
    • Convergence Security Journal
    • /
    • v.15 no.7
    • /
    • pp.39-45
    • /
    • 2015
  • Industrial secrets that companies own recently protected by various act related industrial security such as Trade Secret Act, Act on Prevention of Divulgence and Protection of Industrial Technology, etc. However, despite such protection infringement and leakage accidents of industrial secrets is increasing every year. According to a survey conducted by KAITS(Korean Association for Industrial Technology Security) annual average of estimated damage by industrial secrets leakage is estimated to be "50 trillion won." This is equivalent to the amount of annual revenue of small businesses more than 4,700 units. Following this, industrial secrets leakage causes serious damages to competitiveness of nation and companies and economic. However investment and effort to the industrial secrets leakage crime is lack of level compared to the scale of damage. Actually, most companies except some major companies are lack of response action about industrial secrets leakage because of shortage of separate organization, workforce, budget for industrial secrets leakage security. This paper aims to understand the overall flow of the industrial secrets leakage crime through various taxonomy such as cause of occurrence and leakage pathway and grasp the condition of damage from industrial secrets leakage through analyzation of internal and external industrial secrets leakage crime. This is expected to be the basis for related research.

Leakage-Suppressed SRAM with Dynamic Power Saving Scheme for Future Sub-70-nm CMOS Technology (70-nm 이하 급 초미세 CMOS 공정에서의 누설 전류 및 동적 전류 소비 억제 내장형 SRAM 설계)

  • CHOI Hun-Dae;CHOI Hyun Young;KIM Dong Myeong;KIM Daejeong;MIN Kyeung-Sik
    • Proceedings of the IEEK Conference
    • /
    • 2004.06b
    • /
    • pp.343-346
    • /
    • 2004
  • This paper proposes a leakage-suppressed SRAM with dynamic power saying scheme for the future leakage-dominant sub-70-nm technology. By dynamically controlling the common source-line voltage ($V_{SL}$) of sleep cells, the sub-threshold leakage through these sleep cells can be reduced to be 1/10-1/100 due to the reverse body-bias effect, dram-induced barrier lowering (DIBL) and negative $V_{GS}$ effects. Moreover, the bit-ling leakage which mar introduce a fault during the read operation can be completely eliminated in this new SRAM. The dynamic $V_{SL}$ control can also reduce the bit-line swing during the write so that the dynamic power in write can be reduced. This new SRAM was fabricated in 0.35-${\mu}m$ CMOS process and more than $30\%$ of dynamic power saying is experimentally verified in the measurement. The leakage suppression scheme is expected to be able to reduce more than $90\%$ of total SRAM power in the future leakage-dominant 70-nm process.

  • PDF