• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.402-403
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• 2006

This research aims to develop the multiple channel electrochemical DNA chip using microfabrication technology. At first, we fabricated a high integration type DNA chip array by lithography technology. Several probe DNAs consisting of thiol group at their 5-end were immobilized on the gold electrodes. Then target DNAs were hybridized and reacted. Cyclic voltammetry showed a difference between target DNA and control DNA in the anodic peak current values. Therefore, it is able to detect a plural genes electrochemically after immobilization of a plural probe DNA and hybridization of non-labeling target DNA on the electrodes simultaneously. It suggested that this DNA chip could recognize the sequence specific genes.

• 반도체디스플레이기술학회지
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• 제9권2호
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• pp.111-116
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• 2010

In a large area magnetron sputtering system, which is under the influence of high heat load from the plasma, it is necessary to use the effective water cooling in order to maintain the proper deposition performance and the economic use of target materials. A series of three-dimensional numerical simulations are carried out on the simplified model of the large area magnetron sputtering system with the cooling plate that includes the U-shaped water channel. The analysis is focused on the effects of water channel geometry, cooling water flowrate, thermal conductivity of target material, and the degree of target erosion on the cooling performance of cooling plate, which is represented by the temperature distribution of target material.

• Nuclear Engineering and Technology
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• 제53권10호
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• pp.3158-3163
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• 2021

Chromium material is commonly used for fusion plasma facing applications because of the low neutron activation property. The Monte Carlo method is one of the useful ways to investigate the ion-target interactions. In this study, Chromium target irradiated by protons was investigated using Monte Carlo based simulation tools. In this context, the calculations of radiation damage on Chromium material irradiated with protons at 17.9 and 22.3 MeV energies were carried out using GEANT4 and SRIM codes. Besides, the cross sections for proton interaction with Chromium target were calculated by the TALYS 1.9 code using CTM + FGM, BSFGM, and GSFM level densities. As a result, GEANT4, SRIM and TALYS 1.9 codes provide a suitable tool for the predictions of radiation damage and cross cross section with proton irradiation.

• 한국전기전자재료학회논문지
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• 제36권1호
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• pp.36-41
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• 2023

We investigated the properties of vanadium oxide (VOx) buffer layers deposited by a dual RF magnetron sputtering method under various target powers for inverted organic solar cells (IOSCs). Sputter fabricatged VOx thin films exhibited higher crystallinity with the increase of target power, resulting in a uniform and large grain size. The electrical properties of VOx films are improved with the increase of target power because of the increase of V content. In the results, the performance of IOSCs critically depended on the target power during the film growth because the crystalllinity of the VOx film affects the carrier mobility of the VOx film.

• 한국분말재료학회지
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• 제15권1호
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• pp.1-5
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• 2008

ZnS-$SiO_2$ composite is normally used for sputtering target. In recent years, high sputtering power for higher deposition rate often causes crack formation of the target. Therefore the target material is required that the sintered target material should have high crack resistance, excellent strength and a homogeneous microstructure with high sintered density. In this study, raw ZnS and ZnS-$SiO_2$ powders prepared by a 3-D mixer or high energy ball-milling were successfully densified by spark plasma sintering, the effective densification method of hard-to-sinter materials in a short time. After sintering, the fracture toughness was measured by the indentation fracture (IF) method. Due to the effect of crack deflection by the residual stress occurred by the second phase of fine $SiO_2$, the hardness and fracture toughness reached to 3.031 GPa and $1.014MPa{\cdot}m^{1/2}$, respectively.

• The Journal of the Acoustical Society of Korea
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• 제29권1E호
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• pp.38-44
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• 2010

This paper is based on our comments and proposed amendments to the documents, Annex A, Phantom for determining Maximum Depth of Penetration, and Annex B, Local Dynamic Range Using Acoustical Test Objects 87/400/CDV. IEC 61391-2 Ed. 1.0 200X, prepared by IEC technical Committee 87; Ultrasonics. The documents are concerned with the influence of microstructure of reference target material on the ultrasonic backscattering. Previous works on the attenuation due to backreflection and backscattering of reference target materials are reviewed. The drawback to the use of ungraded stainless steel and metallic materials without microstructural data such as, crystal structure, basic acoustic data of sound velocity and attenuation, grain size, roughness and elastic constants has been discussed. The analysis suggested that the insightful conclusion can be made by differentiating the influence arising from target size and microstructure on the backscattering measurements. The microstructural parameters are associated with physical, geometrical, acoustical and mechanical origins of variation with frequency. Further clarification of such a diverse source mechanisms for ultrasonic backscattering would make the target material and its application for medical diagnosis and therapy simpler and more reliable.

• 반도체디스플레이기술학회지
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• 제19권3호
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• pp.100-105
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• 2020

Recently, as display and semiconductor devices have been miniaturized and highly integrated, there is a demand for optimization of the structural characteristics of the thin film accordingly. The sputtering device has the advantage of stably obtaining a desired thin film depending on the material selected for the target. However, due to the structural characteristics of the sputtering equipment, the structural characteristics of the film may be different depending on the incidence angle of the sputtering target material to the substrate. In this study, the characteristics of the thin film material according to the scattering angle of the target material and the incidence position of the substrate were studied to find the optimization design rule of the sputtering equipment. To this end, a Si thin film of 1 ㎛ or less was deposited on the Si(100) substrate, and then the microstructure, reflectance, surface roughness, and thin film crystallinity of the thin film formed for each substrate location were investigated. As a result of the study, it was found that as the sputter scattering angle increased and the substrate incident angle decreased, the gap energy along with the surface structure of the thin film increased from 1.47 eV to 1.63 eV, gradually changing to a non-conductive tendency.

• 한국소음진동공학회논문집
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• 제18권12호
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• pp.1262-1269
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• 2008

Though multilayered foam-panel structures have been widely used to reduce sound transmission in various fields, most of the previous works to design them were conducted by repeated analyses or experiments based on initially given configurations or sequences. Therefore, it was difficult to obtain an optimal sequence of multilayered foam-panel structure yielding superior sound isolation capability. In this work, we propose a new design method to sequence a multi-panel structure lined with a poroelastic material having maximized sound transmission loss. Being formulated as a one-dimensional topology optimization problem fur a given target frequency, the optimal sequencing of panel-poroelastic layers is systematically carried out in an iterative manner. In this method, a panel layer is expressed as a limiting case of a poroelastic layer to facilitate the optimization process. This means that main material properties of a poroelastic material are treated as interpolated functions of design variable. The designed sequences of panel-poroelastic multilayer were shown to be significantly affected by the target frequencies; more panels were obtained at higher target frequency. The sound transmission loss of the system was calculated by the transfer matrix derived from Biot's theory.

• 한국전기전자재료학회논문지
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• 제17권12호
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• pp.1347-1351
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• 2004

The ZnGa$_2$O$_4$ phosphor target was synthesized through solid-state reactions as calcine and sintering temperature in order to deposit ZnGa$_2$O$_4$ Phosphor thin film by rf magnetron sputtering system. The x-ray diffraction patterns of ZnGa$_2$O$_4$ phosphor target showed the position of (311) main peak. The cathodoluminescence(CL) spectrums of ZnGa$_2$O$_4$ phosphor target showed main peak of 370 nm to 400 nm, and maximum intensity at the calcine temperature of $700^{\circ}C$ and sintering temperature of 130$0^{\circ}C$. It was possible to prepare The ZnGa$_2$O$_4$ phosphor thin film with synthesized ZnGa$_2$O$_4$ phosphor target and The prepared ZnGa$_2$O$_4$ phosphor thin film showed the position of (311) main peak.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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• pp.43-45
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• 1996