Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Fabrication and Characterization of ZnGa2O4 Phosphor Target

ZnGa2O4 형광체 타겟의 제작 및 특성분석

  • 김용천 (경원대학교 전자전기정보공학부) ;
  • 홍범주 (경원대학교 전자전기정보공학부) ;
  • 권상직 (경원대학교 전자전기정보공학부) ;
  • 김경환 (경원대학교 전자전기정보공학부) ;
  • 박용서 (경원대학교 전자전기정보공학부) ;
  • 최형욱 (경원대학교 전자전기정보공학부)
  • Published : 2004.12.01
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Abstract

The ZnGa$_2$O$_4$ phosphor target was synthesized through solid-state reactions as calcine and sintering temperature in order to deposit ZnGa$_2$O$_4$ Phosphor thin film by rf magnetron sputtering system. The x-ray diffraction patterns of ZnGa$_2$O$_4$ phosphor target showed the position of (311) main peak. The cathodoluminescence(CL) spectrums of ZnGa$_2$O$_4$ phosphor target showed main peak of 370 nm to 400 nm, and maximum intensity at the calcine temperature of $700^{\circ}C$ and sintering temperature of 130$0^{\circ}C$. It was possible to prepare The ZnGa$_2$O$_4$ phosphor thin film with synthesized ZnGa$_2$O$_4$ phosphor target and The prepared ZnGa$_2$O$_4$ phosphor thin film showed the position of (311) main peak.

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References

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