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http://dx.doi.org/10.4313/JKEM.2004.17.12.1347

Fabrication and Characterization of ZnGa2O4 Phosphor Target  

Kim, Yong-Chun (경원대학교 전자전기정보공학부)
Hong, Beom-Joo (경원대학교 전자전기정보공학부)
Kwon, Sang-Jik (경원대학교 전자전기정보공학부)
Kim, Kyung-Hwan (경원대학교 전자전기정보공학부)
Park, Yong-Seo (경원대학교 전자전기정보공학부)
Choi, Hyung-Wook (경원대학교 전자전기정보공학부)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.17, no.12, 2004 , pp. 1347-1351 More about this Journal
Abstract
The ZnGa$_2$O$_4$ phosphor target was synthesized through solid-state reactions as calcine and sintering temperature in order to deposit ZnGa$_2$O$_4$ Phosphor thin film by rf magnetron sputtering system. The x-ray diffraction patterns of ZnGa$_2$O$_4$ phosphor target showed the position of (311) main peak. The cathodoluminescence(CL) spectrums of ZnGa$_2$O$_4$ phosphor target showed main peak of 370 nm to 400 nm, and maximum intensity at the calcine temperature of $700^{\circ}C$ and sintering temperature of 130$0^{\circ}C$. It was possible to prepare The ZnGa$_2$O$_4$ phosphor thin film with synthesized ZnGa$_2$O$_4$ phosphor target and The prepared ZnGa$_2$O$_4$ phosphor thin film showed the position of (311) main peak.
Keywords
$ZnGa_{2}O_{4}$; Phosphor; Rf magnetron sputtering; Cathodoluminescence(CL);
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