• 한국재료학회:학술대회논문집
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• 한국재료학회 1996년도 재료학회 추계학술발표회
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• pp.164-164
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• 1996

• 한국재료학회:학술대회논문집
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• 한국재료학회 2001년도 추계 학술발표강연 및 논문개요집
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• pp.63-63
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• 2001

• 한국식품과학회지
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• 제31권4호
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• pp.1065-1070
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• 1999

참취뿌리의 에탄올 추출물과 용매 분획물에 대한 생리활성 효과를 밝히기 위해 항돌연변이성 및 암세포 성장억제효과를 실시한 결과 에탄올 추출물 자체의 돌연변이성은 없었다. 직접변이원인 N-methyl-N'-nitro-N-nitrosoguanidine(MNNG)에 대해서는 Salmonella typhimurium TA100의 경우 에탄올 추출물이 79%, 에틸아세테이트 분획물은 82%의 억제효과를 나타내었다. 4-Nitroquinoline-1-oxide(4NQO)에 대해서는 Salmonella typhimurium TA98에서 에탄올 추출물이 48%, 에틸 아세테이트 분획물은 60%의 억제효과를 보였다. 한편 간접 변이원인 benzo(${\alpha}$)pyrene[B(${\alpha}$)P]에 대해서는 에틸아세테이트 분획물의 경우 TA98에서는 78%, TA100에서는 85%의 높은 억제활성을 나타내었다. 그리고 3-amino-1,4-dimethyl-5H-pyrido(4,3-b)indole(Trp-P-1)에 대해서는 TA98에서 89%의 높은 억제효과를 보였다. 한편 참취 에탄올 추출물에 대한 암세포 성장억제 실험에서도 chronic myelogenous leukemia (K562), human gastric carcinoma (KATOIII), human hepatocellular carcinoma (Hep3B) 및 human breast adenocarcioma (MCF-7)에 대하여 높은 세포독성을 나타내었으며 용매 분획물의 경우 KATOIII 세포에서는 모든 분획물이 높은 세포독성을 나타내었으나 그외세포에 대해서는 물분획물을 제외한 에틸아세테이트, 부탄올 및 클로로포름 분획물이 높은 세포독성을 나타내었다.

• 전자공학회논문지A
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• 제32A권11호
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• pp.35-43
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• 1995

To obtain high quality of $Ta_{2}O_{5}$ film, two dielectric layers of $Si_{3}N_{4}$ and $Ta_{2}O_{5}$ were subsequently formed on Si wafer. Silicon nitride films were thermally grown in 10 Torr ammonia ambient by R.F induced heating system. The thickness of thermally grown $Si_{3}N_{4}$ film was able to be controlled in the range of tens $\AA$ due to the self-limited growth property. $Ta_{2}O_{5}$ film of 200$\AA$ thickness was then deposited on the as-grown $Si_{3}N_{4}$ film about 25$\AA$ thickness by sputtering method and annealed at $900^{\circ}C$in $O_{2}$ ambient for 1hr. Stoichiometry film was prepared by the annealing in oxygen ambient. Despite the high temperature anneal process, silicon oxide layer was not grown at the interface of the layered films because of the oxidation barrier effect of Si$_{3}$N$_{4}$ film. The fabricated $Ta_{2}O_{5}$/$Si_{3}N_{4}$ film showed low leakage current less than several nA and high dielectric breakdown strength.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.551-552
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• 2006

Plasma-induced charging damage was been measured during TaN gate electrode of MISFET(TaN/$HfO_2$/Si) or interconnection metal etching step using large antenna structures. The results of these experiments were obtained that $HfO_2$ gate dielectric layer was affected about plasma charging effects and damage increased with F-N tunneling. Therefore, the etching conditions should be optimized to avoid the defects caused by plasma charging.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.75-78
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• 1996

The deposition condition Gf TiN films as electrode was studied by sheet resistance, TiN depositon Thickness X-ray diffraction. TiN was made by reactively DC magnetron sputtering with varying $N_2$/Ar mixture gas and substrate temperature. After finding The deposition condition of TiN films, The samples with the structure of Cu/Ta$_2$O$_{5}$, TiN/Ta$_2$O$_{5}$Si, Cu/TiN/Ta$_2$O$_{5}$ Si were prepared and were measured I-V, C-V. As a results, it was found that when TiN was deposited in an $N_2$a results, it was found that when TiN was deposited in an $N_2$atmosphere its Sheet resistance is lower n than n V$_2$Ar mixtureixture

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권5호
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• pp.185-190
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• 2002

Capacitor material utilized in the downsizing passive devices and dynamic random access memory(DRAM) requires the physical and electrical properties at given area such as capacitor thickness reduction, relative dielectric constant increase, low leakage current and thermal stability. Common capacitor materials, $SiO_2$, $Si_3N_4$, $SiO_2$/$Si_3N_4$,TaN and et al., used until recently have reached their physical limits in their application to several hundred angstrom scale capacitor. $Ta_2O_{5}$ is known to be a good alternative to the existing materials for the capacitor application because of its high dielectric constant (25 ~35), low leakage current and high breakdown strength. Despite the numerous investigations of $Ta_2O_{5}$ material, there have little been established the clear understanding of the annealing effect on capacitance characteristic and conduction mechanism, design and fabrication for $Ta_2O_{5}$ film capacitor. This study presents the structure-property relationship of reactive-sputtered $Ta_2O_{5}$ MIM capacitor structure processed by annealing in a vacuum. X-ray diffraction patterns skewed the existence of amorphous phase in as-deposited condition and the formation of preferentially oriented-$Ta_2O_{5}$ in 670, $700^{\circ}C$ annealing. On 670, $700^{\circ}C$ annealing under the vacuum, the leakage current decrease and the enhanced temperature-capacitance characteristic stability. and the leakage current behavior is stable irrespective of applied electric field. The results states that keeping $Ta_2O_{5}$ annealed at vacuum gives rise to improvement of electrical characteristics in the capacitor by reducing oxygen-vacancy and the broken bond between Ta and O.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.22.1-22.1
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• 2009

차세대 CMOS 공정에서 유전상수가 높은 게이트 절연막과 함께 게이트 전극이 관심을 끌고 있다. 게이트 전극은 전도도가 높아야 하고 p-MOS, n-MOS에 맞는 일함수를 가져야 하며 열적 특성이 안정해야 한다. 탄탈룸 계열 탄화물이나 질화물은 게이트 전극으로 관심을 끌고 있는 물질이며 이를 원자층 화학증착법으로 박막화 하는 공정이 관심을 끌고 있다. 원자층 화학공정에서는 전구체의 역할이 중요하며 이의 기상반응 메카니즘, 표면 반응 메카니즘을 제대로 이해해야 한다. 본 연구에서는 TBTDET (tert-butylimido tris-diethylamido tantalum) 전구체의 반응 메커니즘을 FTIR(Fourier Transform Infrared)을 이용해 진단하였다. 또한 수소, 암모니아, 메탄을 이용한 열화학 원자층 증착, 플라즈마 원자층 증착 공정을 수행하여 박막을 얻고 이들의 특성을 평가하였다. 각 공정에 따라 반응 메커니즘이 달라지고 박막의 조성이 달라지며 또한 박막의 물성도 달라진다. 특히 박막에 형성되는 TaC, TaN, Ta3N5, Ta2O5 (증착 후 산소의 유입에 의해 형성됨) 등의 조성이 공정에 따라 달라지며 박막의 물성도 달라진다. 반응메카니즘의 연구를 통해 각 공정에서 어떠한 조성의 박막이 얻어지는 지를 규명하였고 박막의 밀도에 따라 산소유입량이 어떻게 달라지는 지를 규명하였다.

• 한국재료학회지
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• 제15권6호
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• pp.426-430
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• 2005

Chemical mechanical polishing (CMP) is an essential process in the production of integrated circuits containing copper interconnects. The effect of alanine in reactive slurries representative of those that might be used in copper CMP was studied with the aim of improving selectivity between copper(Cu) film and tantalum-nitride(TaN) film. We investigated the pH effect of nano-colloidal silica slurry containing alanine through the chemical mechanical polishing test for the 8(inch) blanket wafers as deposited Cu and TaN film, respectively. The copper and tantalum-nitride removal rate decreased with the increase of pH and reaches the neutral at pH 7, then, with the further increase of pH to alkaline, the removal rate rise to increase soddenly. It was found that alkaline slurry has a higher removal rate than acidic and neutral slurries for copper film, but the removal rate of tantalum-nitride does not change much. These tests indicated that alanine may improve the CMP process by controlling the selectivity between Cu and TaN film.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.64-65
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• 2005

The structural and electrical properties of the films are investigated as a function of nitrogen/argon ratio at room temperature and at various deposition temperatures. The phase changes as $Ta_2N$ or TaN in the films were observed as nitrogen/argon ratio increases from 3% to 25%. The phase changes were associated with a change in the resistivity and TCR (temperature coefficient of resistance) of the films. TCR values of the films deposited at room temperature and different nitrogen contents were negative, and strongly decreased with the increase in nitrogen/argon ratio. The Ta2N films deposited at nitrogen/argon ratio of 3% show improved TCR values and thermal stability with increasing deposition temperature. The $Ta_2N$ films grown at nitrogen/argon ratio of 3% and the temperature of $200^{\circ}C$ showed a TCR value of -47 $ppm/^{\circ}C$, which is close to near-zero TCR in the range of deposition temperature.