• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.328.1-328.1
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• 2014

MOSFET degradation의 대부분은 hot-carrier injection에 의한 interface state (Dit)의 생성에서 비롯되며 따라서 본 연구에서는 신뢰성에 대한 한 가지 방법으로 Charge pumping method를 이용하여 MOSFET의 interface trap(Dit)의 변화를 측정하였다. 소스와 드레인을 ground로 묶고 게이트에 펄스를 인가한 후 Icp를 측정하여 Dit를 추출하였다. 온도를 293~343 K까지 5 K씩 가변했을 때 293K의 Icp(${\mu}A$)는 0.12 nA 313 K는 0.112 nA 343 K는 0.926 nA이며 Dit (cm-1/eV-1)는 $1.61{\times}10^{12}$ (Cm-2/eV-1) $1.49{\times}10^{12}$ (Cm-2/eV-1) $1.23{\times}10^{12}$ (Cm-2/eV-1)이다. 측정결과 Dit는 Icp가 높은 지점에서 추출되며 온도가 높아지게 되면 Icp전류가 낮아지고 Dit가 줄어드는 것을 볼 수 있다. 온도가 올라가게 되면 carrier들이 trap 준위에서 conduction band 위쪽에 이동하게 되어서 interface에 trap되는 양이 작아지게 된다. 그래서 이때 Icp를 이용해 추출한 Dit 는 실제로 trap의 양이 줄어든 것이 아니라 Thermal excess 현상으로 인해 측정되는 Icp의 양이 줄어든 것으로 분석할 수 있다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.453-456
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• 1999

The Si-SiO$_2$interface trap and nitride bulk trap distribution of SONOSFET(polysilicon-oxide-nitride-oxide-semiconductor)NVSM(nonvolatile semiconductor memory) cell were investigated by single charge pumping method. The used device was fabricated by 0.35 7m standard logic fabrication including the ONO cell process. This ONO dielectric thickness is tunnel oxide 24 $\AA$, nitride 74 $\AA$, blocking oxide 25 $\AA$, respectively. Keeping the pulse base level in accumulation and pulsing the surface into inversion with increasing amplitudes, the charge pumping current flow from the single junction. Using the obtained I$_{cp}$-V$_{h}$ curve, the local V$_{t}$ distribution, doping concentration, lateral interface trap distribution and lateral memory trap distribution were extracted. The maximum N$_{it}$($\chi$) of 1.62$\times$10$^{19}$ /cm$^2$were determined.mined.d.

• 대한화학회지
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• 제39권8호
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• pp.635-642
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• 1995

Purge & Trap-GC/MS 전처리 방법과 capillary column gas chromatography/ mass spectrometry 분석법을 이용한 휘발성유기물 분석에 있어서, 보다 효울적으로 시료를 주입하는 방법에 대하여 연구하였다. 미국환경청에서 제시한 물 중의 휘발성 유기물 분석방법에서 이용하는 moisture control nodule 과 cryorefocusing에 따르는 여러가지 문제점을 관찰하였다. 이러한 무제점을 해결하기 위해 개선된 시료 주입방식을 제시하고, 여러가지 트랩과 컬럼의 특성을 조사하여 최적 실험조건을 구하였다. 이때 사용한 Purge & Trap 장치의 트랩은 carbopack B/carboxen 1000과 1001이었으며, 기체 크로마토그라프의 컬럼은 주문 제작한 dimethyldiphenylpolysiloxane crosslingking moiety capillary 컬럼을 사용하였다. 본 연구에서 제시한 방법으로 물 중에 포함된 54종의 휘발성유기물을 대상으로 동시분석할 때의 정확도와 정밀도에 대해 조사하였으며, 각 화합물에 대한 method detection limit를 구하였다.

• 한국펄프종이공학회:학술대회논문집
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• 한국펄프종이공학회 2003년도 춘계학술발표논문집
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• pp.70-79
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• 2003

Paper coating can give smoothness surface and good printability to uncoated paper. Macro roughness of base paper would be decreasing its groove and grit in view of side. Nevertheless its improving effect for paper, some kind of problem is showing in the fine coated paper. Especially, back trap mottle is one of serious problems in printing with fine coated paper. Printers can not adjust conditions to overcome the problem. Also large amounts of paper can be rejected. There are many factors that influence back trap mottle. However it is not clear what the important parameters are in back trap mottle. Back trap mottle has some relationship with ink setting but good guidelines are not clear. Back trap mottle has been linked to non-uniform ink setting. We do not know how much variation in setting we can tolerate. Other mottle issues such as micro-picking and ink refusal are still common. This paper was prepared to identify correlation with ink setting and delta ink density obtained from experiment and then tried to find out some relationships with ink setting and back trap mottle. Basically fine calcium carbonate and ciay was used for main components and coarse calcium carbonate was mixed in two fine pigments to change its porosity and ink acceptance. Micro ink tack force at KRK printing tester was adapted to measure ink setting rate. KRK units were used for back trap mottle simulation and two printed samples were prepared to check delta ink density. Clay base coating has more fast ink setting time than calcium carbonate's though smoothness of clay was better than calcium carbonate. It could be explained by that clay has finer pore in its coating than calcium carbonate. DID(delta ink density) has shown a good correlation with ink setting time from micro ink tack. The total pore volume of coating layer did not match with ink setting and DID. From the results we might conclude coating that has fine pore size around 0.05 ${\mu}m$ can be exposed to high possibility of back trap mottle.

• 마이크로전자및패키징학회지
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• 제25권4호
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• pp.83-88
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• 2018

Cu/Ni/Sn-Ag 미세범프 접합 공정후 Ni/Sn-Ag접합계면에 잔류한 비전도성 필름(non-conductive film, NCF) trap 형성이 전기적 신뢰성에 미치는 영향을 분석하기 위해 온도 $150^{\circ}C$, 전류밀도 $1.5{\times}10^5A/cm^2$ 조건에서 electromigration (EM) 신뢰성 실험을 진행하였다. EM 신뢰성 실험 결과, NCF trap이 거의 없는 Cu/Ni/Sn-Ag 미세범프가 NCF trap이 형성된 미세범프 보다 약 8배 긴 EM 수명을 보여주고 있다. 저항 변화 및 손상계면에 대한 미세구조 분석결과, Ni/Sn-Ag접합계면에 공정 이슈에 의해 형성된 NCF trap이 Ni-Sn 금속간화합물/Sn-Ag솔더계면에 보이드를 유발하여 EM 원자 확산을 방해하기 때문에 빠른 보이드 성장에 의한 전기적 손상이 일찍 발생하는 것으로 판단된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.43-46
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• 2000

In this paper, the stress and transient currents associated with the on and off time of applied voltage were used to measure the density and distribution of high voltage stress induced traps in thin silicon oxide films. The transient currents were due to the discharging of traps generated by high stress voltage in the silicon oxides. The trap distributions were relatively uniform near both cathode and anode interface. The trap densities were dependent on the stress polarity. The stress generated trap distributions were relatively uniform the order of $10^{11}\sim10^{21}$[states/eV/$cm^2$] after a stress. The trap densities at the oxide silicon interface after high stress voltages were in the $10^{10}\sim10^{13}$[states/eV/$cm^2$]. It appear that the stress and transient current that flowed when the stress voltage were applied to the oxide was caused by carriers tunneling through the silicon oxide by the high voltage stress generated traps.

• International Journal of Industrial Entomology and Biomaterials
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• 제17권2호
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• pp.201-203
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• 2008

A field study on self trap cropping system in controlling tukra mealy bug Maconellicoccus hirsutus Green) incidence on mulberry (Morus spp.; V-1 variety; $3'{\times}3'$ spacing) gardens was undertaken in selected sericulture farmers' mulberry gardens of Pydeti village (Parigi Mandal, Anantapur District, Andhra Pradesh, India). The study was conducted for three years (2004, 2005 and 2006). Four treatments (T0; control/no treatment, T1; self trap cropping rows with 10 row interval, T2; self trap cropping rows with 10 row interval and treating these rows only with 0.5% neem oil emulsion and T3; self trap cropping rows with 10 rows intervals and treating all the mulberry rows including self trap cropping rows with 0.5% neem oil emulsion) were considered. The results indicated that the incidence increased in T0 and T1 while the same suppressed in T2 and T3. The suppression (%) of tukra incidence between T2 and T3 was not significant. Hence, T2 only was recommended to farmers as its economical viable practice. The results are discussed based on the importance of tukra, its suppression and cost of treatment.

• 한국응용곤충학회지
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• 제45권1호
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• pp.87-90
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• 2006

톱다리개미허리노린재(Riptortus clavatus)의 집합페로몬 트랩에 먹이(건조 대두 + 건조 땅콩 + 물)를 첨가함으로써 트랩의 유인력을 증가시킬 수 있는지를 수반트랩과 원형트랩을 사용하여 조사하였다. 수반트랩의 경우, 페로몬+먹이를 달아준 트랩이 페로몬 만 달아준 트랩이나 무처리 트랩보다 더 많은 수의 암컷과 수컷을 유인하였다. 원통형트랩에서도 페로몬 + 먹이를 달아준 트랩이 더 많은 암수성충과 약충을 유인하는 경향이 있었지만 통계적 차이는 없었다. 페로몬 트랩에 먹이를 첨가하는 것이 트랩의 유인력을 증가시킬 수 있을 것으로 판단되지만 트랩형태와 유인력에 관한 앞으로의 연구가 요망된다.

• Mass Spectrometry Letters
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• 제6권3호
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• pp.59-64
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• 2015

Quadrupole ion trap mass analyzer with a simplified geometry, namely, the cylindrical ion trap (CIT), has been shown to be well-suited using in miniature mass spectrometry and even in mass spectrometer arrays. Computation of stability regions is of particular importance in designing and assembling an ion trap. However, solving CIT equations are rather more difficult and complex than QIT equations, so, analytical and matrix methods have been widely used to calculate the stability regions. In this article we present the results of numerical simulations of the physical properties and the fractional mass resolutions m/Δm of the confined ions in the first stability region was analyzed by the fifth order Runge-Kutta method (RKM5) at the optimum radius size for both ion traps. Because of similarity the both results, having determining the optimum radius, we can make much easier to design CIT. Also, the simulated results has been performed a high precision in the resolution of trapped ions at the optimum radius size.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권8호
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• pp.463-467
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• 2000

In this paper, the new LIGBT structures with trap injection are proposed to improve switching characteristics of the conventional SOI LIGBT. The Simulations are performed in order to investigate the effects of the positiion, whidth and concentration of trap injection region with a reduced minority carrier lifetime using 2D device simulator MEDICI. Their electrical characteristics are analyzed and the optimum design parameters are extracted. As a result of simulation, the turn off time for the model A with the trap injection is $0.78\mus$. These results indicate the improvement of about 2 times compared with the conventional SOI LIGBT because trap injection prevents minority carriers which is stored in the n-drift region during turn off switching. The latching current is $1.5\times10^{-4}A/\mum$ and forward blocking voltage is 168V which are superior to those of conventional structure. It is shown that the trap injection is very effective to reduce the turn off time with a little increasing of on-state voltage drop if its design and process parameters are optimized.