• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.328.1-328.1
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• 2014

MOSFET degradation의 대부분은 hot-carrier injection에 의한 interface state (Dit)의 생성에서 비롯되며 따라서 본 연구에서는 신뢰성에 대한 한 가지 방법으로 Charge pumping method를 이용하여 MOSFET의 interface trap(Dit)의 변화를 측정하였다. 소스와 드레인을 ground로 묶고 게이트에 펄스를 인가한 후 Icp를 측정하여 Dit를 추출하였다. 온도를 293~343 K까지 5 K씩 가변했을 때 293K의 Icp(${\mu}A$)는 0.12 nA 313 K는 0.112 nA 343 K는 0.926 nA이며 Dit (cm-1/eV-1)는 $1.61{\times}10^{12}$ (Cm-2/eV-1) $1.49{\times}10^{12}$ (Cm-2/eV-1) $1.23{\times}10^{12}$ (Cm-2/eV-1)이다. 측정결과 Dit는 Icp가 높은 지점에서 추출되며 온도가 높아지게 되면 Icp전류가 낮아지고 Dit가 줄어드는 것을 볼 수 있다. 온도가 올라가게 되면 carrier들이 trap 준위에서 conduction band 위쪽에 이동하게 되어서 interface에 trap되는 양이 작아지게 된다. 그래서 이때 Icp를 이용해 추출한 Dit 는 실제로 trap의 양이 줄어든 것이 아니라 Thermal excess 현상으로 인해 측정되는 Icp의 양이 줄어든 것으로 분석할 수 있다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.453-456
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• 1999

The Si-SiO$_2$interface trap and nitride bulk trap distribution of SONOSFET(polysilicon-oxide-nitride-oxide-semiconductor)NVSM(nonvolatile semiconductor memory) cell were investigated by single charge pumping method. The used device was fabricated by 0.35 7m standard logic fabrication including the ONO cell process. This ONO dielectric thickness is tunnel oxide 24 $\AA$, nitride 74 $\AA$, blocking oxide 25 $\AA$, respectively. Keeping the pulse base level in accumulation and pulsing the surface into inversion with increasing amplitudes, the charge pumping current flow from the single junction. Using the obtained I$_{cp}$-V$_{h}$ curve, the local V$_{t}$ distribution, doping concentration, lateral interface trap distribution and lateral memory trap distribution were extracted. The maximum N$_{it}$($\chi$) of 1.62$\times$10$^{19}$ /cm$^2$were determined.mined.d.

• Journal of the Korean Chemical Society
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• v.39 no.8
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• pp.635-642
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• 1995

Improved sample introduction system has been investigated for the determination of volatile organic compounds in water using a purge & trap preconcentration apparatus and a capillary gas chromatography/mass spectrometry. The present limitations associated with the moisture control module and cryorefocusing system suggested by EPA were discussed. To solve the problems such as improper separation of peaks due to the adsorption of water and contamination of purge & trap system, a more efficient connection system between the purge & trap apparatus and the gas chromatograph was introduced and the optimum operational conditions were suggested. A carbopack B/carboxen 1000 and 1001 trap was used for the purge & trap procedure and a custom made crosslinked dimethyldiphenylpolysiloxane capillary column was used for the separation of compounds. Accuracy and precision of the method suggested in this report were examined and the method detection limit of each compound was proposed for the simultaneous determination of 54 volatile organic compounds in water.

• Proceedings of the Korea Technical Association of the Pulp and Paper Industry Conference
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• 2003.04a
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• pp.70-79
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• 2003

Paper coating can give smoothness surface and good printability to uncoated paper. Macro roughness of base paper would be decreasing its groove and grit in view of side. Nevertheless its improving effect for paper, some kind of problem is showing in the fine coated paper. Especially, back trap mottle is one of serious problems in printing with fine coated paper. Printers can not adjust conditions to overcome the problem. Also large amounts of paper can be rejected. There are many factors that influence back trap mottle. However it is not clear what the important parameters are in back trap mottle. Back trap mottle has some relationship with ink setting but good guidelines are not clear. Back trap mottle has been linked to non-uniform ink setting. We do not know how much variation in setting we can tolerate. Other mottle issues such as micro-picking and ink refusal are still common. This paper was prepared to identify correlation with ink setting and delta ink density obtained from experiment and then tried to find out some relationships with ink setting and back trap mottle. Basically fine calcium carbonate and ciay was used for main components and coarse calcium carbonate was mixed in two fine pigments to change its porosity and ink acceptance. Micro ink tack force at KRK printing tester was adapted to measure ink setting rate. KRK units were used for back trap mottle simulation and two printed samples were prepared to check delta ink density. Clay base coating has more fast ink setting time than calcium carbonate's though smoothness of clay was better than calcium carbonate. It could be explained by that clay has finer pore in its coating than calcium carbonate. DID(delta ink density) has shown a good correlation with ink setting time from micro ink tack. The total pore volume of coating layer did not match with ink setting and DID. From the results we might conclude coating that has fine pore size around 0.05 ${\mu}m$ can be exposed to high possibility of back trap mottle.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.4
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• pp.83-88
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• 2018

The electromigration (EM) tests were performed at $150^{\circ}C$ with $1.5{\times}10^5A/cm^2$ conditions in order to investigate the effect of non-conductive film (NCF) trap on the electrical reliability of Cu/Ni/Sn-Ag microbumps. The EM failure time of Cu/Ni/Sn-Ag microbump with NCF trap was around 8 times shorter than Cu/Ni/Sn-Ag microbump without NCF trap. From systematic analysis on the electrical resistance and failed interfaces, the trapped NCF-induced voids at the Sn-Ag/Ni-Sn intermetallic compound interface lead to faster EM void growth and earlier open failure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.43-46
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• 2000

In this paper, the stress and transient currents associated with the on and off time of applied voltage were used to measure the density and distribution of high voltage stress induced traps in thin silicon oxide films. The transient currents were due to the discharging of traps generated by high stress voltage in the silicon oxides. The trap distributions were relatively uniform near both cathode and anode interface. The trap densities were dependent on the stress polarity. The stress generated trap distributions were relatively uniform the order of $10^{11}\sim10^{21}$[states/eV/$cm^2$] after a stress. The trap densities at the oxide silicon interface after high stress voltages were in the $10^{10}\sim10^{13}$[states/eV/$cm^2$]. It appear that the stress and transient current that flowed when the stress voltage were applied to the oxide was caused by carriers tunneling through the silicon oxide by the high voltage stress generated traps.

• International Journal of Industrial Entomology and Biomaterials
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• v.17 no.2
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• pp.201-203
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• 2008

A field study on self trap cropping system in controlling tukra mealy bug Maconellicoccus hirsutus Green) incidence on mulberry (Morus spp.; V-1 variety; $3'{\times}3'$ spacing) gardens was undertaken in selected sericulture farmers' mulberry gardens of Pydeti village (Parigi Mandal, Anantapur District, Andhra Pradesh, India). The study was conducted for three years (2004, 2005 and 2006). Four treatments (T0; control/no treatment, T1; self trap cropping rows with 10 row interval, T2; self trap cropping rows with 10 row interval and treating these rows only with 0.5% neem oil emulsion and T3; self trap cropping rows with 10 rows intervals and treating all the mulberry rows including self trap cropping rows with 0.5% neem oil emulsion) were considered. The results indicated that the incidence increased in T0 and T1 while the same suppressed in T2 and T3. The suppression (%) of tukra incidence between T2 and T3 was not significant. Hence, T2 only was recommended to farmers as its economical viable practice. The results are discussed based on the importance of tukra, its suppression and cost of treatment.

• Korean journal of applied entomology
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• v.45 no.1 s.142
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• pp.87-90
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• 2006

The effect of food source in aggregation pheromone trap of bean bug, Riptortus clavatus, was evaluated in terms of the trap attractiveness using water-ran and cylinder-type traps. Water-pan trap baited with pheromone + food (dried soybean + dried peanut + water) attracted significantly more number of females and males than those with pheromone or control trap. Although cylinder-type trap baited with pheromone + food did not show significantly higher attractiveness, it attracted more adults and nymphs than the pheromone and control traps. Further research on the effect of trap types on attractiveness is needed.

• Mass Spectrometry Letters
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• v.6 no.3
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• pp.59-64
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• 2015

Quadrupole ion trap mass analyzer with a simplified geometry, namely, the cylindrical ion trap (CIT), has been shown to be well-suited using in miniature mass spectrometry and even in mass spectrometer arrays. Computation of stability regions is of particular importance in designing and assembling an ion trap. However, solving CIT equations are rather more difficult and complex than QIT equations, so, analytical and matrix methods have been widely used to calculate the stability regions. In this article we present the results of numerical simulations of the physical properties and the fractional mass resolutions m/Δm of the confined ions in the first stability region was analyzed by the fifth order Runge-Kutta method (RKM5) at the optimum radius size for both ion traps. Because of similarity the both results, having determining the optimum radius, we can make much easier to design CIT. Also, the simulated results has been performed a high precision in the resolution of trapped ions at the optimum radius size.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.8
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• pp.463-467
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• 2000

In this paper, the new LIGBT structures with trap injection are proposed to improve switching characteristics of the conventional SOI LIGBT. The Simulations are performed in order to investigate the effects of the positiion, whidth and concentration of trap injection region with a reduced minority carrier lifetime using 2D device simulator MEDICI. Their electrical characteristics are analyzed and the optimum design parameters are extracted. As a result of simulation, the turn off time for the model A with the trap injection is $0.78\mus$. These results indicate the improvement of about 2 times compared with the conventional SOI LIGBT because trap injection prevents minority carriers which is stored in the n-drift region during turn off switching. The latching current is $1.5\times10^{-4}A/\mum$ and forward blocking voltage is 168V which are superior to those of conventional structure. It is shown that the trap injection is very effective to reduce the turn off time with a little increasing of on-state voltage drop if its design and process parameters are optimized.