• Current Optics and Photonics
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• v.2 no.5
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• pp.448-452
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• 2018

A three-wavelength $Pr^{3+}:YLF$ laser at 604 nm, 607 nm and 640 nm simultaneously output by Fabry-Perot (F-P) etalon has been obtained. A 444 nm blue laser diode is used for pumping the $Pr^{3+}:YLF$ crystal, and a 0.1 mm F-P etalon is inserted in the resonator to select wavelength. The theoretical model of three-wavelength $Pr^{3+}:YLF$ laser is established, by adjusting the tilt angle of the etalon, the transmittances of the different wavelengths can be controlled, and the threshold values can be made to equalize by controlling the loss among different wavelengths. In the experiment, when the tilt angle of etalon is $9^{\circ}$ and the optimized length of resonator is 48 mm, the total output power of 25 mW at the three-wavelength is achieved at incident pump power of 7.5 W.

• Journal of Veterinary Clinics
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• v.32 no.4
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• pp.295-300
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• 2015

The aim of the study was to assess the in vitro effect of 808-nm InGaAs diode laser on rabbit articular chondrocyte proliferation and sulphated glycosaminoglycan (sGAG) synthesis in alginate bead. Previous studies revealed either positive or negative stimulatory effects of laser on different types of cells. A 808-nm InGaAs diode laser at 1.0W power output was used to irradiate the rabbit chondrocytes in alginate beads with energy densities of $31J/cm^2$ (G 1) and $62J/cm^2$ (G 2) corresponding to the experimental groups for 10 seconds and 20 seconds, respectively at 24, 48, 72 and 96 hours after seeding. Control group was left untreated. MTT assay was performed at 1 week and 2 weeks after the $1^{st}$ laser irradiation in alginate beads. sGAG synthesis in alginate beads at 1 week and 2 weeks were determined by DMMB assay. Histological evaluation for cellular distribution and sGAG deposition around the cells were performed by alcian blue stain. MTT assay revealed no positive stimulatory effect in cell proliferation in alginate bead. DMMB assay results showed significantly increased sGAG production in G 2 chondrocytes at 2 weeks. Image analysis of alcian blue stained slides also showed significantly higher percentage of positive alcian blue stain in G 2 chondrocytes. This result suggests that 808-nm InGaAs diode laser with 1.0 W power output although cannot stimulate cell proliferation it can increase the cell secretion activity and sGAG deposition in alginate beads.

• Journal of the Korean Society for Heat Treatment
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• v.24 no.4
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• pp.203-208
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• 2011

Recently, from general machine parts and automobile parts using carbon steel to a mold, there has been efforts for improving durability and attrition resistance of these parts. Especially, heat treatment with laser which works fast and automatically can be used for the mass production with high quality. Moreover, local heat treatment can be used to handle with complex and precise parts. Accordingly, we analyzed hardening characteristics of carbon steel using the finite element method and compare the experimental results to have more reliability. We also proved the cause of thermal deformation with temperature and stress distribution by heat treatment. After these analysis and experimental, we found that each maximum hardness of the two tests was 728 Hv and 700 Hv, on condition of $1050^{\circ}C$ heating temperature, and 2 mm/sec laser speed. We also found that difference of surface stress-distribution was occurred, and this makes deformation mode up after heat treatment.

• Transactions of the Society of Information Storage Systems
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• v.2 no.1
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• pp.21-25
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• 2006

The new multimedia information environment requires smaller optical data storage systems. However, one of the difficulties encountered in designing small form factor(SFF) optical pick-up is to emit the heat which is generated from laser diode(LD). Heat generated at the LD can reduce the optical performance of the system and the lifetime of LD. Therefore, it is important to include the thermal design in the design stage of SFF optical pick-up system for high performance and the longer lifetime of LD, and furthermore, to analyze the thermal characteristics of LD in detail micro heat transfer analysis is necessary. In the present study, micro heat transfer analysis was performed using the finite element method for the $28{\times}11{\times}2mm^3$ super slim swing-arm type optical pick-up actuator for Blu-ray disk. Two different materials were used for a swing-arm; a double layer polycarbonate/steel structure and a single aluminum structure.

• Journal of the Optical Society of Korea
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• v.19 no.3
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• pp.255-259
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• 2015

We have proposed and experimentally verified a pulse-width modulation (PWM) generator which directly generated a PWM signal in the optical domain. Output waveforms were clear at the repetition rate of 16 MHz; the duty cycle (DC) was from 14.7% to 72.1%; and the DC-control resolution was about 4.399%/dB. The PWM generator' operation principle is based on the injection-locking property of a single-mode Fabry-$P{\acute{e}}rot$ laser diode (SMFP-LD). The SMFP-LD, which has a self-locked mode wavelength at ${\lambda}_{PWM}$, was used to detect the power of the injection-locking signal (optical analog input). If the analog input power is high, the SMFP-LD is locked to the wavelength of the input signal ${\lambda}_a$ and there is no output after an optical bandpass filter (OBF). If the analog input power is low, the SMFP-LD is unlocked and there is output signal at ${\lambda}_{PWM}$ after the OBF. Thus, the SMFP-LD plus the OBF provide digital output for an analog input. The DC of the output PWM signal can be controlled by tuning the power of the analog input.

• ETRI Journal
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• v.23 no.3
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• pp.97-105
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• 2001

$1.6\;{\mu}m$ emission originated from $Pr^{3+}:\;(^3F_3,\;^3F_4)\;{\longrightarrow}\;^3H_4$ transition in $Pr^{3+}-\;and\;Pr^{3+}/Er^{3+}$-doped selenide glasses was investigated under an optical pump of a conventional 1480 nm laser diode. The measured peak wavelength and fullwidth at half-maximum of the fluorescent emission are ~1650nm and 120nm, respectively. A moderate lifetime of the thermally coupled upper manifolds of ${\sim}212{\pm}10{\mu}s$ together with a high stimulated emission cross-section of ${\sim}(3{\pm}1){\times}10^{-20}\;cm^2$ promises to be useful for $1.6{\mu}m$ band fiber-optic amplifiers that can be pumped with an existing high-power 1480 nm laser diode. Codoping $Er^{3+}$ enhances the emission intensity by way of a nonradiative $Er^{3+}:\;^4I_{13/2}\;{\longrightarrow}\;Pr^{3+}:\;(^3F_3,\;^3F_4)$ energy transfer. The Dexter model based on the spectral overlap between donor emission and acceptor absorption describes well the energy transfer from $Er^{3+}$ to $Pr^{3+}$ in these glasses. Also discussed in this paper are major transmission loss mechanisms of a selenide glass optical fiber.

• ETRI Journal
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• v.30 no.3
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• pp.480-482
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• 2008

A novel InGaAsP/InP buried-ridge waveguide laser diode structure is proposed and demonstrated for use as a single-mode laser. The lateral mode of the proposed device can be controlled by adjusting the composition and thickness of the InGaAsP layer grown over the active region. Stable single-mode operation without kinks or beam-steering is achieved successfully with lateral and transverse in the junction plane even for the device with the ridge width of 9 ${\mu}m$ up to an injection current of 500 mA.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.29 no.8C
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• pp.1104-1112
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• 2004

In this paper, we establish measurement methods of vibration frequency for three-dimensional behavior measurement of large-scale structure using laser and high-speed CCD camera. We project the diode laser having a smaller fluctuation on the object plane attached to the structure and measure the displacement of the structure using a precise relative measurement algorithm. When we use high-speed(120 frames/sec) CCD camera, we can measure the vibration frequency having the uncertainty within 0.5% by taking FFT on the displacement, from 0Hz to 40Hz. And we also confirm the reliability and economical string of the suggested measurement method of vibration frequency of the structure by showing the accuracy of displacement measurement using laser is comparable to that of relative positioning methods using GPS.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.552-554
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• 1995

In long-haul high speed optical communications, the distance between a transmitter and a receiver depends on the amount of light coupled to a single mode optical fiber from the laser diode(LD) as well as the LD characteristic itself. And the transmitter module must have long lifetime. high reliability, and even simple structure. Such points have induced laser welding technique to be a first choice in opto-electronic module packaging because it can provide strong weld joint in a short time with very small coupling loss. In this paper, packaging considerations and characteristics for high speed LD modules are discussed. They include optical path design factors for larger aligning tolerance, and novel laser welding processes for component assembly. For low coupling loss after laser welding processes, the optical path for optimum coupling of a single mode optical fiber into the LD chip was designed with the GRIN lens system providing sufficiently large aligning tolerance both in the radial and axial directions. The measured sensitivity of the LD module was better than -33.7dBm(back to back) at a BER of $10^{-10}$ with a 2.5Gbps NRZ $2^{23}-1$ PRBS.

• Journal of the Korean Society for Precision Engineering
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• v.27 no.2
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• pp.13-19
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• 2010

Due to the rapid spread of mobile handheld devices, industrial demands for micro-scale holes with a diameter of even smaller than $10{\mu}m$ in sapphire/silicon wafers have been increasing. Holes in sapphire wafers are for heat dissipation from LEDs; and those in silicon wafers for interlayer communication in three-dimensional integrated circuit (IC). We have developed a sapphire wafer driller equipped with a 532nm laser in which a cooling chuck is employed to minimize local heat accumulation in wafer. Through the optimization of process parameters (pulse energy, repetition rate, number of pulses), quality holes with a diameter of $30{\mu}m$ and a depth of $100{\mu}m$ can be drilled at a rate of 30holes/sec. We also have developed a silicon wafer driller equipped with a 355nm laser. It is able to drill quality through-holes of $15{\mu}m$ in diameter and $150{\mu}m$ in depth at a rate of 100holes/sec.