• Korean Journal of Materials Research
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• v.12 no.3
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• pp.200-204
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• 2002

We fabricated TMR devices which have double oxidized tunnel barrier using plasma oxidation method to form homogeneously oxidized AlO tunnel barrier. We sputtered 10 $\AA$-bottom Al layer and oxidized it by varying oxidation time for 5, 10, 20 sec. Subsequent sputtering of 13 $\AA$ - Al was performed and the matallic layer was oxidized for 120 sec. The electrical resistance changed from 700$\Omega$ to 2700$\Omega$ with increase of oxidation time, while variation of MR ratio was little spreading 27~31% which is larger than that of TMR device of ordinary single tunnel barrier. We calculated effective barrier height and width by measuring I-V curves, from which we found the barrier height was 1.3~1.5 eV, sufficient for tunnel barrier, and the barrier width(<16.2 $\AA$) was smaller than that of directly measured value by the tunneling electron microscopy. Our results may be caused by insufficient oxidation of Al precursor into $Al_2O_3$. However, double oxidized tunnel barriers were superior to conventional single tunnel barrier in uniformity and density. We found that the external magnetic field to switch spin direction of ferromagnetic layer of pinned layer breaking ferro-antiferro exchange coupling was increased as bottom layer oxidation time increased. Our results imply that we were able to improve MR ratio and tune switching field by employing double oxidized tunnel barrier process.

• Journal of Magnetics
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• v.11 no.1
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• pp.8-11
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• 2006

Recently half-metallic full-Heusler alloy films have attracted significant interests for spintronics devices. As these alloys have been known to have a high spin polarization, very large TMR ratio is expected in magnetic tunnel junctions. Among these alloys, $Co_2MnSi$ full-Heusler alloy with a high spin polarization and a high Curie temperature is considered a good candidate as an electrode material for spintronic devices. In this study, the magnetic and structural properties of $Co_2MnSi$ Heusler alloy films were investigated. TMR characteristics of magnetic tunnel junctions with a $Co_2MnSi/SiO_2/CoFe$ structure were studied. A maximum MR ratio of 39% with $SiO_2$ substrates and 27% with MgO(100) substrates were obtained. The lower MR ratio than expectation is considered due to off-stoichiometry and atomic disorder of $Co_2MnSi$ electrode together with oxidation of the electrode layer.

• Proceedings of the KSR Conference
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• 2011.05a
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• pp.1195-1201
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• 2011

Since the release of safety standard IEC 61508 which defines functional safety of electronic safety-related systems, SIL(Safety Integrity Level) certification for railway systems has gained lots of attention lately. In this paper, we propose a new design technique of the computer board for train control systems with high reliability and safety. The board is designed with TMR(Triple Modular Redundancy) using a certified SIL3 Texas Instrument(TI)'s TMS570 MCU(Micro-Controller Unit) to guarantee safety and reliability. TMR for the control device is implemented on FPGA(Field Programmable Gate Array) which integrates a comparator, a CAN(Controller Area Network) communication module, built-in self-error checking, error discriminant function to improve the reliability of the board. Even if a malfunction of a processing module occurs, the safety control function based on the proposed technique lets the system operate properly by detecting and masking the malfunction. An RTOS (Real Time Operation System) called FreeRTOS is ported on the board so that reliable and stable operation and convenient software development can be provided.

• Journal of Magnetics
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• v.11 no.1
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• pp.25-29
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• 2006

Recent experiments have demonstrated high TMR ratios in MTJs with the MgO barrier [1,2]. The CoFeB/MgO/CoFeB junctions showed better properties than the CoFe/MgO/CoFe junctions because the MgO layer had a good crystalline structure with (001) texture and smooth and sharp interface between CoFeB/MgO [3]. The amorphous CoFeB with 20 at%B starts the crystallization at $340^{\circ}C$ [4] and this crystallization of the CoFeB helps obtaining the high TMR ratio. In this work, the compositional changes in the MgO barrier and at the interface of CoFeB/MgO/CoFeB after the CoFeB crystallization were studied in annealed MTJs. XPS depth profiles were utilized. TEM analyses showed that the MgO barrier had (100) texture on CoFeB in the junctions. B in the bottom CoFeB layer diffused into the MgO barrier and B-oxide was formed at the interface of CoFeB/MgO/CoFeB after the CoFeB crystallization.

• Progress in Medical Physics
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• v.5 no.2
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• pp.57-68
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• 1994

Purpose : The purposes are to discuss the reason to measure dose distributions of circular small fields for stereotactic radiosurgery based on medical linear accelerator, finding of beam axis, and considering points on dosimetry using home-made small water phantom, and to report dosimetric results of 10MV X-ray of Clinac-18, like as TMR, OAR and field size factor required for treatment planning. Method and material : Dose-response linearity and dose-rate dependence of a p-type silicon (Si) diode, of which size and sensitivity are proper for small field dosimetry, are determined by means of measurement. Two water tanks being same in shape and size, with internal dimension, 30${\times}$30${\times}$30cm$^3$ were home-made with acrylic plates and connected by a hose. One of them a used as a water phantom and the other as a device to control depth of the Si detector in the phantom. Two orthogonal dose profiles at a specified depth were used to determine beam axis. TMR's of 4 circular cones, 10, 20, 30 and 40mm at 100cm SAD were measured, and OAR's of them were measured at 4 depths, d$\sub$max/, 6, 10, 15cm at 100cm SCD. Field size factor (FSF) defined by the ratio of D$\sub$max/ of a given cone at SAD to MU were also measured. Result : The dose-response linearity of the Si detector was almost perfect. Its sensitivity decreased with increasing dose rate but stable for high dose rate like as 100MU/min and higher even though dose out of field could be a little bit overestimated because of low dose rate. Method determining beam axis by two orthogonal profiles was simple and gave 0.05mm accuracy. Adjustment of depth of the detector in a water phantom by insertion and remove of some acryl pates under an auxiliary water tank was also simple and accurate. TMR, OAR and FSF measured by Si detector were sufficiently accurate for application to treatment planning of linac-based stereotactic radiosurgery. OAR in field was nearly independent of depth. Conclusion : The Si detector was appropriate for dosimetry of small circular fields for linac-based stereotactic radiosurgery. The beam axis could be determined by two orthogonal dose profiles. The adjustment of depth of the detector in water was possible by addition or removal of some acryl plates under the auxiliary water tank and simple. TMR, OAR and FSF were accurate enough to apply to stereotactic radiosurgery planning. OAR data at one depth are sufficient for radiosurgery planning.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.3
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• pp.458-464
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• 2017

A magnetic tunnel junction (MTJ) based ternary content addressable memory (TCAM) is proposed which provides non-volatility. A unit cell of the TCAM has two MTJ's and 4.875 transistors, which allows the realization of TCAM in a small area. The equivalent resistance of parallel connected multiple unit cells is compared with the equivalent resistance of parallel connected multiple reference resistance, which provides the averaging effect of the variations of device characteristics. This averaging effect renders the proposed TCAM to be variation-tolerant. Using 65-nm CMOS model parameters, the operation of the proposed TCAM has been evaluated including the Monte-Carlo simulated variations of the device characteristics, the supply voltage variation, and the temperature variation. With the tunneling magnetoresistance ratio (TMR) of 1.5 and all the variations being included, the error probability of the search operation is found to be smaller than 0.033-%.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.3
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• pp.185-196
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• 2002

MRAM(magnetic random access memory) is a promising candidate for a universal memory with non-volatile, fast operation speed and low power consumption. The simplest architecture of MRAM cell is a combination of MTJ(magnetic tunnel junction) as a data storage part and MOS transistor as a data selection part. This article will review the general development status of MRAM and discuss the issues. The key issues of MRAM technology as a future memory candidate are resistance control and low current operation for small enough device size. Switching issues are controllable with a choice of appropriate shape and fine patterning process. The control of fabrication is rather important to realize an actual memory device for MRAM technology.

• Journal of Animal Environmental Science
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• v.19 no.1
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• pp.9-18
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• 2013

Currently, there was no producing system of TMR for pig feeding in Korea. In this study, we examined unrolling, cutting, and softening for the round bale silage. We designed and developed the prototype system of round bale silage for pig feeding. Unroll method were lower chain conveying and upper belt conveying which includes an hydraulic vertical fodder knife. Gathering and cutting method were rotating auger and flywheel which have 10 cutters, input roller of 280 rpm, and cutter rotating speed of 1,750 rpm. Softening device was rotating hammer in inclined cylinder adjustable to $25^{\circ}C$ and rotating speed up to 1,300 rpm. The prototype system was integrated working for unrolling, cutting, and softening. We found that when the round bale silage in unrolling apparatus cut length of 20 cm to input cutting apparatus, the cutting performance was well in continuous working up to input rate of 1,000 kg/h, the softening apparatus was working well.

• Archives of Plastic Surgery
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• v.48 no.3
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• pp.310-322
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• 2021

The incidence of extremity amputation is estimated at about 200,000 cases annually. Over 25% of patients suffer from terminal neuroma or phantom limb pain (TNPLP), resulting in pain, inability to wear a prosthetic device, and lost work. Once TNPLP develops, there is no definitive cure. Therefore, there has been an emerging focus on TNPLP prevention. We examined the current literature on TNPLP prevention in patients undergoing extremity amputation. A literature review was performed using Ovid Medline, Cochrane Collaboration Library, and Google Scholar to identify all original studies that addressed surgical prophylaxis against TNPLP. The search was conducted using both Medical Subject Headings and free-text using the terms "phantom limb pain," "amputation neuroma," and "surgical prevention of amputation neuroma." Fifteen studies met the inclusion criteria, including six prospective trials, two comprehensive literature reviews, four retrospective chart reviews, and three case series/technique reviews. Five techniques were identified, and each was incorporated into a targetbased classification system. A small but growing body of literature exists regarding the surgical prevention of TNPLP. Targeted muscle reinnervation (TMR), a form of physiologic target reassignment, has the greatest momentum in the academic surgical community, with multiple recent prospective studies demonstrating superior prevention of TNPLP. Neurorrhaphy and transposition with implantation are supported by less robust evidence, but merit future study as alternatives to TMR.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2002.11b
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• pp.375-380
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• 2002

As the data storage device market demands higher data transfer rate with higher track density. TMR budget is to be tighter so that even minor improvement is sought in HDD development fields. Disk flutter associated with the turbulent air flow inside the chamber becomes of great interest for the reduction of PES especially at OD. A comparative transient turbulent flow study is presented in this paper for the reduction of disk flutter with different housing designs.