• 한국재료학회지
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• 제12권3호
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• pp.200-204
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• 2002

We fabricated TMR devices which have double oxidized tunnel barrier using plasma oxidation method to form homogeneously oxidized AlO tunnel barrier. We sputtered 10 $\AA$-bottom Al layer and oxidized it by varying oxidation time for 5, 10, 20 sec. Subsequent sputtering of 13 $\AA$ - Al was performed and the matallic layer was oxidized for 120 sec. The electrical resistance changed from 700$\Omega$ to 2700$\Omega$ with increase of oxidation time, while variation of MR ratio was little spreading 27~31% which is larger than that of TMR device of ordinary single tunnel barrier. We calculated effective barrier height and width by measuring I-V curves, from which we found the barrier height was 1.3~1.5 eV, sufficient for tunnel barrier, and the barrier width(<16.2 $\AA$) was smaller than that of directly measured value by the tunneling electron microscopy. Our results may be caused by insufficient oxidation of Al precursor into $Al_2O_3$. However, double oxidized tunnel barriers were superior to conventional single tunnel barrier in uniformity and density. We found that the external magnetic field to switch spin direction of ferromagnetic layer of pinned layer breaking ferro-antiferro exchange coupling was increased as bottom layer oxidation time increased. Our results imply that we were able to improve MR ratio and tune switching field by employing double oxidized tunnel barrier process.

• Journal of Magnetics
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• 제11권1호
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• pp.8-11
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• 2006

Recently half-metallic full-Heusler alloy films have attracted significant interests for spintronics devices. As these alloys have been known to have a high spin polarization, very large TMR ratio is expected in magnetic tunnel junctions. Among these alloys, $Co_2MnSi$ full-Heusler alloy with a high spin polarization and a high Curie temperature is considered a good candidate as an electrode material for spintronic devices. In this study, the magnetic and structural properties of $Co_2MnSi$ Heusler alloy films were investigated. TMR characteristics of magnetic tunnel junctions with a $Co_2MnSi/SiO_2/CoFe$ structure were studied. A maximum MR ratio of 39% with $SiO_2$ substrates and 27% with MgO(100) substrates were obtained. The lower MR ratio than expectation is considered due to off-stoichiometry and atomic disorder of $Co_2MnSi$ electrode together with oxidation of the electrode layer.

• 한국철도학회:학술대회논문집
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• 한국철도학회 2011년도 춘계학술대회 논문집
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• pp.1195-1201
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• 2011

Since the release of safety standard IEC 61508 which defines functional safety of electronic safety-related systems, SIL(Safety Integrity Level) certification for railway systems has gained lots of attention lately. In this paper, we propose a new design technique of the computer board for train control systems with high reliability and safety. The board is designed with TMR(Triple Modular Redundancy) using a certified SIL3 Texas Instrument(TI)'s TMS570 MCU(Micro-Controller Unit) to guarantee safety and reliability. TMR for the control device is implemented on FPGA(Field Programmable Gate Array) which integrates a comparator, a CAN(Controller Area Network) communication module, built-in self-error checking, error discriminant function to improve the reliability of the board. Even if a malfunction of a processing module occurs, the safety control function based on the proposed technique lets the system operate properly by detecting and masking the malfunction. An RTOS (Real Time Operation System) called FreeRTOS is ported on the board so that reliable and stable operation and convenient software development can be provided.

• Journal of Magnetics
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• 제11권1호
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• pp.25-29
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• 2006

Recent experiments have demonstrated high TMR ratios in MTJs with the MgO barrier [1,2]. The CoFeB/MgO/CoFeB junctions showed better properties than the CoFe/MgO/CoFe junctions because the MgO layer had a good crystalline structure with (001) texture and smooth and sharp interface between CoFeB/MgO [3]. The amorphous CoFeB with 20 at%B starts the crystallization at $340^{\circ}C$ [4] and this crystallization of the CoFeB helps obtaining the high TMR ratio. In this work, the compositional changes in the MgO barrier and at the interface of CoFeB/MgO/CoFeB after the CoFeB crystallization were studied in annealed MTJs. XPS depth profiles were utilized. TEM analyses showed that the MgO barrier had (100) texture on CoFeB in the junctions. B in the bottom CoFeB layer diffused into the MgO barrier and B-oxide was formed at the interface of CoFeB/MgO/CoFeB after the CoFeB crystallization.

• 한국의학물리학회지:의학물리
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• 제5권2호
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• pp.57-68
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• 1994

선형가속기에 의한 뇌정위적 방사선수술에 적용되는 원형 소조사변의 선량분포를 측정하기 위해 측정기 선정 이유와 선축 결정, 자체 제작한 소형 물 팬톰에 의한 선량분포 측정시 고려해야 할 점에 대해 논의하고, 치료계획에 필요한 자료인 Clinac-18의 10MV X-선의 TMR, OAR, 조사면 계수와 같은 선량분포 측정결과를 보고하고자 한다. 뇌정위적 방사선수술에 권고되고 있는 조사면 크기가 3cm 이하의 작은 조사면에 대한 선량 분포를 측정하기 위해서는 크기나 감도에 있어서 적합한 p-형 실리콘(Si) 검출기가 선량에 대한 선형성과 선량율 독립성이 적합한지 측정에 의해 판단하였다. 크기와 형태가 같은 아크릴 통을 두 개 제작하여 호스로 연결하여 하나는 물 팬톰으로 이용하고 다른 하나는 높이를 조절하여 측정기의 깊이를 조절하였다. 측정할 위치에서 직각 방향의 측방선량분포를 측정하여 선축의 위치를 찾았다. SAD 100cm 위치에서 조사면 크기 10, 20, 30, 40mm 네 개 콘에 대하여 TMR을 측정하였으며, 일정한 선원-측정기간 거리(SCD)에서 최대선량점깊이(d$_{max}$) 및 6, 10, 15cm 깊이에서 OAR을 측정하여 비교하였다. 조사면 계수는 MU당 SAD, d$_{max}$에서 콘에 대한 선량으로 실리콘 검출기로 측정하였다. 실리콘 검출기는 선량에 대한 선형성이 거의 완벽하였으며 감도는 선량율이 증가함에 따라 감소하였다. 낮은 선량율 때문에 조사면 밖의 선량을 약간 과대평가할 수 있을지라도 100MU/min 이상의 선량율에 대해서는 일정하였다. 직각 방향의 측방선량분포 측정에 의하여 선축을 찾는 방식은 간편하였다. 1cm 두께의 아크릴 판을 보조 물통 아래에 삽입ㆍ제거하는 방식으로 측정기의 깊이 조절도 간편하면서 정확하였다. 측정에 의한 TMR, OAR, 조사면 계수는 충분히 정확하여 뇌정위적 방사선수술의 치료계획에 이용할 수 있었으며, OAR은 조사면 범위 내에서는 깊이에 거의 무관하였다. 실리콘 검출기는 소조사면 선량분포 측정에 적합하였으며 직각 방향의 측방선량분포의 측정으로 0.05mm까지 정확히 선축을 찾을 수 있었고, 보조 물통과 아크릴 판을 이용하여 측정기의 깊이를 조절하는 것이 용이하였다. TMR, OAR, 조사면계수의 측정치는 뇌정위적 방사선수술의 치료 계획에 이용할 수 있을 정도로 정확하였으며, OAR은 하나의 깊이에서 측정해도 충분할 것이라고 사료된다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제17권3호
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• pp.458-464
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• 2017

A magnetic tunnel junction (MTJ) based ternary content addressable memory (TCAM) is proposed which provides non-volatility. A unit cell of the TCAM has two MTJ's and 4.875 transistors, which allows the realization of TCAM in a small area. The equivalent resistance of parallel connected multiple unit cells is compared with the equivalent resistance of parallel connected multiple reference resistance, which provides the averaging effect of the variations of device characteristics. This averaging effect renders the proposed TCAM to be variation-tolerant. Using 65-nm CMOS model parameters, the operation of the proposed TCAM has been evaluated including the Monte-Carlo simulated variations of the device characteristics, the supply voltage variation, and the temperature variation. With the tunneling magnetoresistance ratio (TMR) of 1.5 and all the variations being included, the error probability of the search operation is found to be smaller than 0.033-%.

• JSTS:Journal of Semiconductor Technology and Science
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• 제2권3호
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• pp.185-196
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• 2002

MRAM(magnetic random access memory) is a promising candidate for a universal memory with non-volatile, fast operation speed and low power consumption. The simplest architecture of MRAM cell is a combination of MTJ(magnetic tunnel junction) as a data storage part and MOS transistor as a data selection part. This article will review the general development status of MRAM and discuss the issues. The key issues of MRAM technology as a future memory candidate are resistance control and low current operation for small enough device size. Switching issues are controllable with a choice of appropriate shape and fine patterning process. The control of fabrication is rather important to realize an actual memory device for MRAM technology.

• 한국축산시설환경학회지
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• 제19권1호
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• pp.9-18
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• 2013

Currently, there was no producing system of TMR for pig feeding in Korea. In this study, we examined unrolling, cutting, and softening for the round bale silage. We designed and developed the prototype system of round bale silage for pig feeding. Unroll method were lower chain conveying and upper belt conveying which includes an hydraulic vertical fodder knife. Gathering and cutting method were rotating auger and flywheel which have 10 cutters, input roller of 280 rpm, and cutter rotating speed of 1,750 rpm. Softening device was rotating hammer in inclined cylinder adjustable to $25^{\circ}C$ and rotating speed up to 1,300 rpm. The prototype system was integrated working for unrolling, cutting, and softening. We found that when the round bale silage in unrolling apparatus cut length of 20 cm to input cutting apparatus, the cutting performance was well in continuous working up to input rate of 1,000 kg/h, the softening apparatus was working well.

• Archives of Plastic Surgery
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• 제48권3호
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• pp.310-322
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• 2021

The incidence of extremity amputation is estimated at about 200,000 cases annually. Over 25% of patients suffer from terminal neuroma or phantom limb pain (TNPLP), resulting in pain, inability to wear a prosthetic device, and lost work. Once TNPLP develops, there is no definitive cure. Therefore, there has been an emerging focus on TNPLP prevention. We examined the current literature on TNPLP prevention in patients undergoing extremity amputation. A literature review was performed using Ovid Medline, Cochrane Collaboration Library, and Google Scholar to identify all original studies that addressed surgical prophylaxis against TNPLP. The search was conducted using both Medical Subject Headings and free-text using the terms "phantom limb pain," "amputation neuroma," and "surgical prevention of amputation neuroma." Fifteen studies met the inclusion criteria, including six prospective trials, two comprehensive literature reviews, four retrospective chart reviews, and three case series/technique reviews. Five techniques were identified, and each was incorporated into a targetbased classification system. A small but growing body of literature exists regarding the surgical prevention of TNPLP. Targeted muscle reinnervation (TMR), a form of physiologic target reassignment, has the greatest momentum in the academic surgical community, with multiple recent prospective studies demonstrating superior prevention of TNPLP. Neurorrhaphy and transposition with implantation are supported by less robust evidence, but merit future study as alternatives to TMR.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2002년도 추계학술대회논문집
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• pp.375-380
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• 2002

As the data storage device market demands higher data transfer rate with higher track density. TMR budget is to be tighter so that even minor improvement is sought in HDD development fields. Disk flutter associated with the turbulent air flow inside the chamber becomes of great interest for the reduction of PES especially at OD. A comparative transient turbulent flow study is presented in this paper for the reduction of disk flutter with different housing designs.