• Title/Summary/Keyword: TID(total ionizing dose)

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Towards defining a simplified procedure for COTS system-on-chip TID testing

  • Di Mascio, Stefano;Menicucci, Alessandra;Furano, Gianluca;Szewczyk, Tomasz;Campajola, Luigi;Di Capua, Francesco;Lucaroni, Andrea;Ottavi, Marco
    • Nuclear Engineering and Technology
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    • v.50 no.8
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    • pp.1298-1305
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    • 2018
  • The use of System-on-Chip (SoC) solutions in the design of on-board data handling systems is an important step towards further miniaturization in space. However, the Total Ionizing Dose (TID) and Single Event Effects (SEE) characterization of these complex devices present new challenges that are either not fully addressed by current testing guidelines or may result in expensive, cumbersome test configurations. In this paper we report the test setups, procedures and results for TID testing of a SoC microcontroller both using standard $^{60}Co$ and low-energy protons beams. This paper specifically points out the differences in the test methodology and in the challenges between TID testing with proton beam and with the conventional gamma ray irradiation. New test setup and procedures are proposed which are capable of emulating typical mission conditions (clock, bias, software, reprogramming, etc.) while keeping the test setup as simple as possible at the same time.

Simulation-based analysis of total ionizing dose effects on low noise amplifier for wireless communications

  • Gandha Satria Adi;Dong-Seok Kim;Inyong Kwon
    • Nuclear Engineering and Technology
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    • v.56 no.2
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    • pp.568-574
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    • 2024
  • The development of radiation-tolerant radio-frequency (RF) systems can be a solution for applications in extreme radiation environments, such as nuclear power plant monitoring and space exploration. Among the crucial components within an RF system, the low noise amplifier (LNA) stands out due to its vulnerability to TID effects, mainly relying on transistors as its main devices. In this study, the TID effects in the LNA using standard 0.18 ㎛ complementary metal oxide semiconductors (CMOS) technology are estimated and analyzed. The results show that the LNA can withstand absorbed radiation up to 100 kGy. The S21, S11, noise figure (NF), stability (K), and linearity of the third input intercept point (IIP3) slightly shifted from the initial values of 0.8312 dB, 0.793 dB, 0.00381 dB, 1.34406, and 2.36066 dBm, respectively which are still comparable to the typical performances. Moreover, the standard 0.18 ㎛ technology has demonstrated its radiation tolerance, as it exhibits negligible performance degradation in the conventional LNA even when exposed to radiation levels up to 100 kGy. In this context, simulation approach offers a means to predict the TID effects and estimate the radiation exposure limit for electronic devices, particularly when transistors are used as the primary RF components.

Radiation-hardened-by-design preamplifier with binary weighted current source for radiation detector

  • Minuk Seung;Jong-Gyun Choi ;Woo-young Choi;Inyong Kwon
    • Nuclear Engineering and Technology
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    • v.56 no.1
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    • pp.189-194
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    • 2024
  • This paper presents a radiation-hardened-by-design preamplifier that utilizes a self-compensation technique with a charge-sensitive amplifier (CSA) and replica for total ionizing dose (TID) effects. The CSA consists of an operational amplifier (OPAMP) with a 6-bit binary weighted current source (BWCS) and feedback network. The replica circuit is utilized to compensate for the TID effects of the CSA. Two comparators can detect the operating point of the replica OPAMP and generate appropriate signals to control the switches of the BWCS. The proposed preamplifier was fabricated using a general-purpose complementary metal-oxide-silicon field effect transistor 0.18 ㎛ process and verified through a test up to 230 kGy (SiO2) at a rate of 10.46 kGy (SiO2)/h. The code of the BWCS control circuit varied with the total radiation dose. During the verification test, the initial value of the digital code was 39, and a final value of 30 was observed. Furthermore, the preamplifier output exhibited a maximum variation error of 2.39%, while the maximum rise-time error was 1.96%. A minimum signal-to-noise ratio of 49.64 dB was measured.

Environment Simulation and Effect Estimation of Space Radiation for COMS Communication Payload (통신해양기상위성 통신 탑재체의 우주 방사선 환경 모사 및 영향 추정)

  • Kim, Seong-Jun;U, Hyeong-Je;Seon, Jong-Ho
    • Journal of the Korean Society for Aeronautical & Space Sciences
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    • v.34 no.11
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    • pp.76-83
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    • 2006
  • Space radiation environment for COMS is simulated by NASA AP8/AE8, JPL91 and NRL CREME models, respectively for trapped particle, solar proton and cosmic-ray. The radiation effects on electronic devices in communication payload are also estimated by using simulation results. Dose-depth curve and LET spectrum are calculated for estimating total ionizing dose(TID) effect and single event effect(SEE) respectively. Spherical sector method is applied to dose estimation at each position in the units of communication payload to consider shielding effect of platform and housing. Total ionizing dose at each position varies by 8 times through shielding effect under the same external space radiation environment.

High energy swift heavy ion irradiation and annealing effects on DC electrical characteristics of 200 GHz SiGe HBTs

  • Hegde, Vinayakprasanna N.;Praveen, K.C.;Pradeep, T.M.;Pushpa, N.;Cressler, John D.;Tripathi, Ambuj;Asokan, K.;Prakash, A.P. Gnana
    • Nuclear Engineering and Technology
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    • v.51 no.5
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    • pp.1428-1435
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    • 2019
  • The total ionizing dose (TID) and non ionizing energy loss (NIEL) effects of 100 MeV phosphorous ($P^{7+}$) and 80 MeV nitrogen ($N^{6+}$) ions on 200 GHz silicon-germanium heterojunction bipolar transistors (SiGe HBTs) were examined in the total dose range from 1 to 100 Mrad(Si). The in-situ I-V characteristics like Gummel characteristics, excess base current (${\Delta}I_B$), net oxide trapped charge ($N_{OX}$), current gain ($h_{FE}$), avalanche multiplication (M-1), neutral base recombination (NBR) and output characteristics ($I_C-V_{CE}$) were analysed before and after irradiation. The significant degradation in device parameters was observed after $100MeV\;P^{7+}$ and $80MeV\;N^{6+}$ ion irradiation. The $100MeV\;P^{7+}$ ions create more damage in the SiGe HBT structure and in turn degrade the electrical characteristics of SiGe HBTs more when compared to $80MeV\;N^{6+}$. The SiGe HBTs irradiated up to 100 Mrad of total dose were annealed from $50^{\circ}C$ to $400^{\circ}C$ in different steps for 30 min duration in order to study the recovery of electrical characteristics. The recovery factors (RFs) are employed to analyse the contribution of room temperature and isochronal annealing in total recovery.

The Study on the Design and Implementation of SHF band Downconverter of Digital Satellite Communication (디지털위성중계기용 SHF 대역 하향주파수 변환장치 설계 및 구현에 대한 연구)

  • Kim, Ki-Jung
    • The Journal of the Korea institute of electronic communication sciences
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    • v.12 no.3
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    • pp.427-432
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    • 2017
  • This study describes the design and implementation of SHF band Downconverter Digital Satellite Communication. The SHF band Downconverter unit consists of PLDRO and Frequency converter. In Frequency converter, microstrip BPF and LPF designed through the pre EM simulation are implemented to minimize the unwanted spurious in Frequency converter. Through the pre-simulation analysis of space environment, the possibility of and minimized about the malfunction of equipment and we designed a reliable SHF band Downconverter through simulation for a TID according to the vibration generated during the launch and space radiation environment, and compared pre-simulation of main performance results to test results about main performances of SHF band Downconverter after production.

The Study on the Implementation and Design of Power Supply Unit of Digital Communication Satellite (디지털위성중계기용 전원공급기 설계 및 구현에 대한 연구)

  • Kim, Ki-Jung
    • The Journal of the Korea institute of electronic communication sciences
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    • v.11 no.9
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    • pp.855-860
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    • 2016
  • This study describes the design and implementation of digital Payload power supply. We materialized the interface of the PLDIU and power supply of a satellite bus, and minimized the potential for the occurrence of such erroneous operation circuit ESD through the WCA of the space environment. We designed a reliable power supply through simulation for a TID according to the vibration generated during the launch and space radiation environment, and found no problem in the function and performance through the test space environment after production.

The Study on the Design and Implementation of SHF band Low Noise Amplifier of Digital Satellite Communication (디지털 위성 중계기용 SHF 대역 저잡음 증폭장치 설계 및 구현에 대한 연구)

  • Kim, Ki-Jung
    • The Journal of the Korea institute of electronic communication sciences
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    • v.11 no.12
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    • pp.1159-1164
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    • 2016
  • This study describes the design and implementation of SHF band Low Noise Amplifier of Digital Satellite Communication. We have applied to HEMT part to minimize Noise Figure of system. and minimized the potential for the occurrence of such erroneous operation of equipment through the simulations of the space environment. We designed a reliable Low Noise Amplifier through simulation for a TID according to the vibration generated during the launch and space radiation environment, and compared pre-simulation of main performance results to test results about main performances of Low Noise Amplifier after production.

The Study on the Design and Implementation of SHF band Upconverter of Digital Satellite Communication (디지털위성중계기용 SHF 대역 상향주파수 변환장치 설계 및 구현에 대한 연구)

  • Kim, Ki-Jung
    • The Journal of the Korea institute of electronic communication sciences
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    • v.12 no.2
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    • pp.261-266
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    • 2017
  • This study describes the design and implementation of SHF band Upconverter Digital Satellite Communication. The SHF band Upconverter unit consists of PLDROand frequency converter. In frequency converter, microstripBPF and LPF designed through the pre EMsimulation are implemented to minimize the unwanted spurious in frequency converter. Through the pre-simulation analysis ofspace environment, the possibility of and minimized about the malfunction of equipment and we designed a reliable SHF band Upconverter through simulation for a TID according to the vibration generated during the launch and space radiation environment, and compared pre-simulation of main performance results to test results about main performances of SHF band Upconverter after production.