• ETRI Journal
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• v.41 no.6
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• pp.829-837
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• 2019

The p-type nanowire field-effect transistor (FET) with a SiGe shell channel on a Si core is optimally designed and characterized using in-depth technology computer-aided design (TCAD) with quantum models for sub-10-nm advanced logic technology. SiGe is adopted as the material for the ultrathin shell channel owing to its two primary merits of high hole mobility and strong Si compatibility. The SiGe shell can effectively confine the hole because of the large valence-band offset (VBO) between the Si core and the SiGe channel arranged in the radial direction. The proposed device is optimized in terms of the Ge shell channel thickness, Ge fraction in the SiGe channel, and the channel length (L_g) by examining a set of primary DC and AC parameters. The cutoff frequency (f_T) and maximum oscillation frequency (f_max) of the proposed device were determined to be 440.0 and 753.9 GHz when L_g is 5 nm, respectively, with an intrinsic delay time (τ) of 3.14 ps. The proposed SiGe-shell channel p-type nanowire FET has demonstrated a strong potential for low-power and high-speed applications in 10-nm-and-beyond complementary metal-oxide-semiconductor (CMOS) technology.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.3
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• pp.147-151
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• 2016

Graphene has a monolayer crystal structure formed with C-atoms and has been used as a base layer of HETs (hot electron transistors). Graphene HETs have exhibited the operation at THz frequencies and higher current on/off ratio than that of Graphene FETs. In this article, we report on the preliminary results of current characteristics from the HETs which are fabricated utilizing highly doped Si collector, graphene base, and 5 nm thin $Al_2O_3$ tunnel layers between the base and Ti emitter. We have observed E-B forward currents are inherited to tunneling through $Al_2O_3$ layers, but have not noticed the Schottky barrier blocking effect on B-C forward current at the base/collector interface. At the common-emitter configuration, under a constant $V_{BE}$ between 0~1.2V, $I_C$ has increased linearly with $V_{CE}$ for $V_{CE}$ < $V_{BE}$ indicating the saturation region. As the $V_{CE}$ increases further, a plateau of $I_C$ vs. $V_{CE}$ has appeared slightly at $V_{CE}{\simeq}V_{BE}$, denoting forward-active region. With further increase of $V_{CE}$, $I_C$ has kept increasing probably due to tunneling through thin Schottky barrier between B/C. Thus the current on/off ration has exhibited to be 50. To improve hot electron effects, we propose the usage of low doped Si substrate, insertion of barrier layer between B/C, or substrates with low electron affinity.

• Journal of Conservation Science
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• v.32 no.2
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• pp.235-247
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• 2016

Conventional imaging techniques such as ultraviolet, infrared, and X-ray are used mainly to diagnose the damaged parts of the painted cultural assets in Korea. These techniques, however, have limits in diagnosing damages of interlayer parts. We have performed and extensive study on the applicability of Terahertz(THz) analysis technique, introduced recently to this field of study on cultural properties in Korea, to diagnose painted cultural assets. The specimens, produced to imitate the damage types of Korean painted properties, were analyzed over their painting, supporting, and backing layers by terahertz pulse imaging technique. The analyzed results provided information about the cracks, the separated areas, and the separated distances between layers on the specimens. Our research, then, was extended to real painted cultural remains, Birojana Sam-shin Gwebul-do at Bongseon Temple in Namyang-ju, Korea National Treasure Number 1792, through which we have obtained 3D information about the extent and pattern of damages to the asset. These results demonstrate that terahertz 3D imaging technique has the capability of noncontact 3D diagnosis on painted cultural properties.

• Journal of the Korean Physical Society
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• v.80
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• pp.698-716
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• 2022

Laser plasmas can be produced when high-power laser beams are focused in matter. A focused laser beam of TW(terawatt)-level high power has an extremely strong electric field, so neutral atoms are immediately ionized by the laser electric field, leading to a laser-produced plasma. The laser plasma can be produced by small table-top TW lasers based on the CPA (chirped-pulse amplification) technique, and now they are rather easily available even in university laboratories. In Korea, there are several CPA-based TW (or even petawatt) lasers in a few institutions, and they have been used for diverse laser plasma physics research and applications, including the laser acceleration for electrons and ions, high-power THz (tera-hertz) generation, advanced light sources, high-energy-density plasmas, plasma optics, etc. This paper reviews some of the laser plasma physics research and applications that have been performed in several universities and research institutes.