• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.594-600
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• 2014

A threshold voltage compensation pixel circuit was developed for active-matrix organic light emitting diodes (AMOLEDs) using amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO-TFTs). Oxide TFTs are n-channel TFTs; therefore, we developed a circuit for the n-channel TFT characteristics. The proposed pixel circuit was verified and proved by circuit analysis and circuit simulations. The proposed circuit was able to compensate for the threshold voltage variations of the drive TFT in AMOLEDs. The error rate of the OLED current for a threshold voltage change of 3 V was as low as 1.5%.

• Proceedings of the Korea Institutes of Information Security and Cryptology Conference
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• 1997.11a
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• pp.34-40
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• 1997

By proxy signatures, proposed by Mambo, a designated signer can sign original's signature instead of original signer. This paper presents new types of digital proxy signatures called partial delegation with threshold delegation. In proxy signatures for partial delegation with threshold delegation, the proxy signer's power to sign messages is shared. In conclusion, we construct proxy signature schemes satisfying our conditions.

• Journal of the Korean Statistical Society
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• v.35 no.4
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• pp.409-417
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• 2006

This article is concerned with threshold modeling of the bifurcating autoregressive model (BAR) originally suggested by Cowan and Staudte (1986) for tree structured data of cell lineage study where each individual $(X_t)$ gives rise to two off-spring $(X_{2t},\;X_{2t+1})$ in the next generation. The triplet $(X_t,\;X_{2t},\;X_{2t+1})$ refers to mother-daughter relationship. In this paper we propose a threshold model incorporating the difference of 'fertility' of the mother for the first and second off-springs, and thereby extending BAR to threshold-BAR (TBAR, for short). We derive a sufficient condition of stationarity for the suggested TBAR model. Also various inferential methods such as least squares (LS), maximum likelihood (ML) and quasi-likelihood (QL) methods are discussed and relevant limiting distributions are obtained.

• Journal of Biomedical Engineering Research
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• v.22 no.3
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• pp.269-273
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• 2001

Proper determination of pacing threshold is important for patient safety and pacemaker longevity. In general, cardiac muscle contractions caused by pacing pulses are verified by observing the morphology of surface ECG displayed on a monitor. In this study, a method of automatic pacing threshold determination based on morphological difference between intrinsic and paced ECGs was developed. First, characteristics of intrinsic ECG and paced ECG were analyzed in time and frequency domain and a proper discrimination parameter was extracted. Then, the automatic capture verification method based on the parameter was developed and applied to 23 pacemaker patients. The selected parameter was the area of ventricular depolarization wave during 80ms after pacing stimulus. It was found that the method was reliable and effective in identifying paced ECG and, thereby, determing a proper pacing threshold.

• Proceedings of the Korea Institutes of Information Security and Cryptology Conference
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• 2006.06a
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• pp.79-82
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• 2006

다중 사용자 환경에서 안전한 대리서명을 설계하는 연구의 하나로, threshold 서명 방식을 대리서명에 적용한 threshold 대리서명 기법들이 최근 많이 제안되고 있다. Xue와 Cao가 2004년 발표한 threshold 대리서명 기법은 Hsu-Wu 자체인증 공개키 방식 (Self-certified public key)을 기반으로 설계된 것으로 WISA 2005, CISC 2005, ICCSA 2006에서 각각 다른 취약성이 밝혀진 바 있다. 특히 CISC 2005, ICCSA 2006에서는 각각의 공격방법에 내성을 가질 수 있도록 Xue-Cao 기법을 개선하는 방안을 같이 제시하였다. 본 논문에서는 이러한 개선안이 적용된 Xue-Cao 기법에 대해 두 가지 종류의 원서명자 위조 공격이 가능함을 보인다. 하나는 Hsu-Wu 자체인증 공개키 방식의 취약성을 이용하는 것이고 다른 하나는 Xue-Cao 기법의 서명 생성 방식의 취약성에 기반한 것이다. 이러한 공격을 통해 개선된 Xue-Cao 기법 또한 대리자 보호, 부인방지와 같은 안전성 조건을 만족하지 않음을 확인한다.

• Journal of Electrical Engineering and Technology
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• v.9 no.6
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• pp.2079-2088
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• 2014

In this paper, we propose new physically based threshold voltage models for short channel Surrounding Gate Silicon Nanowire Transistor with two different geometries. The model explores the impact of various device parameters like silicon film thickness, film height, film width, gate oxide thickness, and drain bias on the threshold voltage behavior of a cylindrical surrounding gate and rectangular surrounding gate nanowire MOSFET. Threshold voltage roll-off and DIBL characteristics of these devices are also studied. Proposed models are clearly validated by comparing the simulations with the TCAD simulation for a wide range of device geometries.

• Electrical & Electronic Materials
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• v.9 no.8
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• pp.813-818
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• 1996

Amorphous As$_{10}$Ge$_{15}$ Te$_{75}$ device shows the memory switching characteristics under d.c. bias. In bulk material, a-As$_{10}$Ge$_{15}$ Te$_{75}$ switching threshold voltage (V$_{th}$) is very high (above 100 volts), but in the case of thin film, V$_{th}$ decreases to a few or ten a few volts. The characteristics of V$_{th}$ depends on the physical dimensions such as the thickness of thin film and the separation between d.c. electrodes, and the annealing conditions. The switching threshold voltage decreases exponentially with increasing annealing temperature and annealing time, but increases linearly with the thickness of thin film and exponentially with increasing the separation between d.c. electrodes. The desirable low switching threshold voltage, therefore, can be obtained by the stabilization through annealing and changing physical dimensions.imensions.sions.

• Journal of Nutrition and Health
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• v.27 no.2
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• pp.181-191
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• 1994

This study was designed to evaluate anthropometric measurement, blood pressure, salt threshold and salt preference of children living at orphan home in Seoul and Kangnung. Anthropometric data of the subjects were slightly lower than the Korean standards, and those of children in Seoul were slightly higher than those of children in Kangnung. There were no differences in salt threshold and salt preference between Seoul and Kangnung. Blood pressure had positive correlation that partialled out of age with various anthropometric measurements(body weight, mid-arm circumference, girth of chest, BMI and body surface area), but did not correlated to salt threshold and salt preference.

• ETRI Journal
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• v.17 no.1
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• pp.1-10
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• 1995

We have achieved very low threshold current densities with high light output powers for InGaAs/ GaAs surface-emitting lasers using a periodic gain active structure in which three quantum wells are inserted in two-wavelength-thick (2${\lambda}$ ) cavity. Air-post type devices with a diameter of 20~40${\mu}m$ exhibit a threshold current density of 380~410$A/cm^2$. Output power for a 40${\mu}m$ diameter device reaches over 11 mW. A simple theoretical calculation of the threshold and power performances indicates that the periodic gain structure has an advantage in achieving low threshold current density mainly due to the high coupling efficiency between gain medium and optical field. The deterioration of power, expected from the long cavity length of $2{\lambda}$, is negligible.

• Journal of the Korean Data and Information Science Society
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• v.26 no.1
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• pp.255-260
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• 2015

Among many optimal threshold criteria from ROC curve, the closest-to-(0,1) and amended closest-to-(0,1) criteria are considered. An ROC curve that passes close to the (0,1) point indicates that two models are well classified. In this case, the ROC curve is located far from the (1,0) point. Hence we propose two criteria: the farthest-to-(1,0) and amended farthest-to-(1,0) criteria. These criteria are found to have a relationship with the KolmogorovSmirnov statistic as well as some optimal threshold criteria. Moreover, we derive that a definition for the proposed criteria with more than two dimensions and with relations to multi-dimensional optimal threshold criteria.