• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.546-549
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• 2009

In this paper, we investigated the effects of different source/drain (S/D) electrode materials in thin film transistors (TFTs) based on indium-gallium-zinc oxide (IGZO) semiconductor. A transfer length and effective resistances between S/D electrodes and amorphous IGZO thin-film transistors were examined. Intrinsic TFT parameters were extracted by the transmission line method (TLM) using a series of TFTs with different channel lengths measured at a low drain voltage. The TFTs fabricated with Cu S/D electrodes showed the lowest contact resistance and transfer length indicating good ohmic characteristics, and good transfer characteristics with a field-effect mobility (${\mu}_{FE}$) of 10.0 $cm^2$/Vs.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1600-1603
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• 2009

In this work, we have fabricated inverted staggered ZnO TFTs with 1-${\mu}m$ resolution channel length by micro contact printing (${\mu}$-CP) method. Patterning of micro scale source/drain electrodes without etching is successfully achieved by micro contact printing method by using silver ink and polydimethylsiloxane (PDMS) stamp. And the time dependent characteristics of the sheet resistance show that Ag inklayer could be used as source and drain electrodes for ZnO TFTs.

• Journal of Welding and Joining
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• 제27권4호
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• pp.73-78
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• 2009

Characterization of the microweld CCFL electrode for the TFT-LCD backlight unit was carried out in terms of the glass beading heat treatment conditions. We evaluate the weld zone and parent metal of the microweld CCFL electrodes that were exposed to simulated glass beading heat treatment. The CCFL electrode was composed of the cup made with pure Ni, the pin made with pure Mo and the lead wire made with Ni-Mn alloy. Each part of the electrode was assembled together by micro spot welding process and then the assembled electrodes were exposed to simulated glass beading temperatures of $700^{\circ}C,\;750^{\circ}C$ and $800^{\circ}C$. The microstructures of the microweld CCFL electrode were observed by using optical microscope, scanning electron microscope and EDS. Micro-tensile and microhardness test were also carried out. The results indicated that the grain coarsening in the HAZs(heat affected zones) for both the cup-pin weld and pin-lead wire were exhibited and the grain coarsening of the HAZ for the cup and the lead wire was more obvious than the HAZ of the pin. The micro-tensile test revealed that the fracture occurred at the cup-pin weld zone for all test conditions. The fracture surface could be classified into two parts such as pin portion and cup portion including weld nugget. The failure was seemed to be initiated from the boundary between nugget and pin through the weld joint. The result of the microhardness measurement exhibited that the relatively low hardness value, about 105HV was recorded at the HAZ of the cup. This value was about 50% less than that of the original value of the cup. The reduction of the microhardness was considered as the cause of the grain coarsening due to welding process. It was also appeared that there was no change in electric resistance for the standard electrodes and heat treated electrodes.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.287-287
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• 2010

We report a new direct patterning method, called liquid bridge-mediated nanotransfer molding (LB-nTM), for the formation of two- or three-dimensional structures with feature sizes between tens of nanometers and tens of micron over large areas. LB-nTM is based on the direct transfer of various materials from a mold to a substrate via a liquid bridge between them. This procedure can be adopted for automated direct printing machines that generate patterns of functional materials with a wide range of feature sizes on diverse substrates. Arrays of TIPS-PEN TFTs were fabricated on 4" polyethersulfone (PES) substrates by LB-nTM using PDMS molds. An inverted staggered structure was employed in the TFT device fabrication. A 150 nm-thick indium-tin oxide (ITO) gate electrode and a 200 nm-thick SiO2dielectric layer were formed on a PES substrate by sputter deposition. An array of TIPS-PEN patterns (thickness: 60 nm) as active channel layers was fabricated on the substrate by LB-nTM. The nominal channel length of the TIPS-PEN TFT was 10 mm, while the channel width was 135 mm. Finally, the source and drain electrodes of 200 nm-thick Ag were defined on the substrate by LB-nTM. The TIPS-PEN TFTs can endure strenuous bending and are also transparent in the visible range, and therefore potentially useful for flexible and invisible electronics.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.341-341
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• 2012

Recently, oxide semi-conductor materials have been investigated as promising candidates replacing a-Si:H and poly-Si semiconductor because they have some advantages of a room-temperature process, low-cost, high performance and various applications in flexible and transparent electronics. Particularly, amorphous indium-gallium-zinc-oxide (a-IGZO) is an interesting semiconductor material for use in flexible thin film transistor (TFT) fabrication due to the high carrier mobility and low deposition temperatures. In this work, we demonstrated improvement of flexibility in IGZO TFTs, which were fabricated on polyimide (PI) substrate. At first, a thin poly-4vinyl phenol (PVP) layer was spin coated on PI substrate for making a smooth surface up to 0.3 nm, which was required to form high quality active layer. Then, Ni gate electrode of 100 nm was deposited on the bare PVP layer by e-beam evaporator using a shadow mask. The PVP and $Al_2O_3$ layers with different thicknesses were used for organic/inorganic multi gate dielectric, which were formed by spin coater and atomic layer deposition (ALD), respectively, at $200^{\circ}C$. 70 nm IGZO semiconductor layer and 70 nm Al source/drain electrodes were respectively deposited by RF magnetron sputter and thermal evaporator using shadow masks. Then, IGZO layer was annealed on a hotplate at $200^{\circ}C$ for 1 hour. Standard electrical characteristics of transistors were measured by a semiconductor parameter analyzer at room temperature in the dark and performance of devices then was also evaluated under static and dynamic mechanical deformation. The IGZO TFTs incorporating hybrid gate dielectrics showed a high flexibility compared to the device with single structural gate dielectrics. The effects of mechanical deformation on the TFT characteristics will be discussed in detail.

• 한국재료학회지
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• 제17권9호
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• pp.484-488
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• 2007

Mo(Ti) alloy and pure Cu thin films were subsequently deposited on $SiO_2-coated$ Si wafers, resulting in $Cu/Mo(Ti)/SiO_2$ structures. The multi-structures have been annealed in vacuum at $100-600^{\circ}C$ for 30 min to investigate the outdiffusion of Ti to Cu surface. Annealing at high temperature allowed the outdiffusion of Ti from the Mo(Ti) alloy underlayer to the Cu surface and then forming $TiO_2$ on the surface, which protected the Cu surface against $SiH_4＋NH_3$ plasma during the deposition of $Si_3N_4$ on Cu. The formation of $TiO_2$ layer on the Cu surface was a strong function of annealing temperature and Ti concentration in Mo(Ti) underlayer. Significant outdiffusion of Ti started to occur at $400^{\circ}C$ when the Ti concentration in Mo(Ti) alloy was higher than 60 at.%. This resulted in the formation of $TiO_2/Cu/Mo(Ti)\;alloy/SiO_2$ structures. We have employed the as-deposited Cu/Mo(Ti) alloy and the $500^{\circ}C-annealed$ Cu/Mo(Ti) alloy as gate electrodes to fabricate TFT devices, and then measured the electrical characteristics. The $500^{\circ}C$ annealed Cu/Mo($Ti{\geq}60at.%$) gate electrode TFT showed the excellent electrical characteristics ($mobility\;=\;0.488\;-\;0.505\;cm^2/Vs$, on/off $ratio\;=\;2{\times}10^5-1.85{\times}10^6$, subthreshold = 0.733.1.13 V/decade), indicating that the use of Ti-rich($Ti{\geq}60at.%$) alloy underlayer effectively passivated the Cu surface as a result of the formation of $TiO_2$ on the Cu grain boundaries.

• E2M - 전기 전자와 첨단 소재
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• 제8권3호
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• pp.340-351
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• 1995

Electrical, physical and optical properties of Aluminum(Al), Copper(Cu) thin films were investigated in order to establish the optimum sputtering parameters in Liquid Crystal Display (LCD) panel applications. DC-magnetron sputtered film on coming 7059 samples were fabricated with variations of deposition power densities, deposition pressures and substrate temperatures. Low resistivity films(AI;2.80 .mu..ohm.-cm, Cu:1.84 .mu..ohm-cm),which lower than the reported values, were obtained under sputtering parameters of power density(250W), substrate temperature(450-530.deg. C) and 5*10$\^$-3/ Torr deposition pressure. Expected columnar growth and stable grain growth of both films was observed through the Scanning Electron Microscope(SEM) micrographs. Dependency of the applicable defect-free film density upon depositon power and temperature was also characterized. Not too noticable variations in X-ray diffraction patterns were remarked under the alterations of sputtering parameters. High optical reflectivities of Al, Cu films, approximately 70-90 %, showed high degree of surface flatness.

• 한국산학기술학회논문지
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• 제11권5호
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• pp.1592-1596
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• 2010

IGZO (indium gallium zinc oxide) 박막트랜지스터는, 활성층 채널의 폭과 길이의 비가 고정된 경우에도, 채널 길이가 길어지면 게이트전압에 대한 드레인 전류의 특성곡선이 양의 전압 방향으로 이동하고 전계효과이동도는 낮아졌다. 채널의 길이와 폭이 고정된 상태에서는, 드레인이 전압 높은 경우에 전계효과이동도가 낮고 문턱아래 기울기가 큰 특성을 보였다. 이러한 현상은 IGZO 채널층의 일함수가 커서 소스/드레인 전극과 채널층의 접합부 띠굽음이 규소반도체의 경우와 반대방향으로 나타나는 것에 기인하는 것으로 해석된다.

• 한국전기전자재료학회논문지
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• 제29권2호
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• pp.120-124
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• 2016

In this study, we fabricate transparent and bendable a-IGZO (amorphous indium gallium zinc oxide) TFTs (thin-film transistors) with a-IZO (amorphous indium zinc oxide) transparent electrodes on plastic substrates and investigate their electrical characteristics under bending states. Our a-IGZO TFTs show a high transmittance of 82% at a wavelength of 550 nm. And these TFTs have an $I_{on}/I_{off}$ ratio of $1.8{\times}10^8$, a field effect mobility of $15.4cm^2/V{\cdot}s$, and a subthreshold swing of 186 mV/dec. The good electrical characteristics are retained even after bending with a curvature radius of 18 mm corresponding to a strain of 0.5% owing to mechanical durability of the transparent electrodes used in this study.

• 청정기술
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• 제21권4호
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• pp.209-216
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• 2015

인듐주석산화물(ITO)은 TFT-LCD, OLED 등의 투명전극에 널리 사용되는 소재이다. ITO의 주요 원소인 인듐(In)은 높은 비용과 제한된 매장량 등으로 인해 머지 않아 고갈될 것으로 예측되고 있다. 이에 대처하는 방법은 공정 후 잔류 ITO 타겟을 재활용하여 ITO 소재의 원료를 확보하는 것이다. 본 원고에서는 공정 후 잔류 ITO 타겟의 재자원화 기술 및 시장 동향 고찰 및 효율적인 재활용을 위한 방향을 제시하였다. 그 결과, 현재 국내 및 일본에서 대부분 잔류 ITO 타겟에서 In만을 재자원화하고 있는 것으로 파악되었다. 이외에도 ITO 나노분말 입자를 제조 및 분산한 용액을 이용하여 투명전극을 제작하는 연구개발이 진행되고 있다. 그러나, ITO 타겟을 이용한 투명전극이 다른 대체 기술을 적용한 것보다 우수하기 때문에, 보다 효율적인 ITO 재자원화 및 타겟 제작을 위해 ITO를 동시에 재생하는 기술 확립이 필요한 것으로 보인다.