• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2008.05a
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• pp.713-716
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• 2008

This paper presents an automatic back-light brightness control system for mobile displays. One of the most important factors in mobile display is the power consumption due to the limited and movable power source. More than 80% of power of the LCD display is consumed by LED bark-light unit (BLU). The target brightness also becomes higher because of its moving picture and high resolution image, so there are some side effects for not only excessive power consumption but also ergonomic inconvenience in dark environment. To prevent this discomfort and reduce power consumption, this paper proposes automatic brightness control (ABC) technique in mobile displays. Developed system contains TFT-LCD panel with built-in photo sensor, driver IC capable of controlling photo sensor, and BLU. Since the photo sensor array built in panel detects automatically outdoor ambient light intensity, the power of BLU in dark environment is reduced. Developed ABC system showed reduced power consumption of 50% in dark environment. We believe that the proposed system is very useful to control power of mobile TFT-LCD.

• ETRI Journal
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• v.24 no.4
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• pp.290-298
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• 2002

We present, for the first time, a prototype active-matrix field emission display (AMFED) in which an amorphous silicon thin-film transistor (a-Si TFT) and a molybdenum-tip field emitter array (Mo-tip FEA) were monolithically integrated on a glass substrate for a novel active-matrix cathode (AMC) plate. The fabricated AMFED showed good display images with a low-voltage scan and data signals irrespective of a high voltage for field emissions. We introduced a light shield layer of metal into our AMC to reduce the photo leakage and back channel currents of the a-Si TFT. We designed the light shield to act as a focusing grid to focus emitted electron beams from the AMC onto the corresponding anode pixel. The thin film depositions in the a-Si TFTs were performed at a high temperature of above 360°C to guarantee the vacuum packaging of the AMC and anode plates. We also developed a novel wet etching process for $n^+-doped$ a-Si etching with high etch selectivity to intrinsic a-Si and used it in the fabrication of an inverted stagger TFT with a very thin active layer. The developed a-Si TFTs performed well enough to be used as control devices for AMCs. The gate bias of the a-Si TFTs well controlled the field emission currents of the AMC plates. The AMFED with these AMC plates showed low-voltage matrix addressing, good stability and reliability of field emission, and good light emissions from the anode plate with phosphors.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1625-1628
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• 2006

Two different negative-type photosensitive polyimides were synthesized and characterized for an application as an interdielectric layer in TFTLCD array. In the case of photocurable polyimides, the photosensitive moiety, 2-HHSP, was synthesized through 3 step reaction, and then was incorporated into side chains of polyimide precursor by post reaction. Optimum compositions of negative-type photocurable polyimde were also formulated. For photopolymerizable polyimides, two novel UV monomers containing imide linkages were prepared. An aqueous alkaline developable polymer matrix was synthesized by free radical copolymerization. A negative photoresist formulation was developed utilizing synthesized UV monomers containing imide linkage, photoinitiator, UV oligomer, and alkali developable polymer matrix. It was found that viaholes with good resolution, high transmittance and thermal resistance could be obtained by photolithographic process utilizing the negative-type photoresist formulations.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.356-358
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• 2004

In this paper we fabricated and succeeded to demonstrate a test panel for AMOLED on 2" glass and PET substrate. The test panel consisted of an array of 64 x 64 pixels in which OLEDs was driven by pentacene TFT. OTFTs were made of the inverted staggered structure and employed polyvinylphenol as the gate insulator and pentacene thin film as the active layer, producing the filed effect mobility of 0.3$cm^2$/V.sec and on/off current ratio of $10^5$. OLEDs were composed of TPD for HTL and Alq3 for EML with 35nm thick each, generating green monochrome light.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.2
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• pp.28-28
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• 2001

능동제어형 전계방출 디스플레이의 전자공급원으로서 능동제어형 전계 에미터 어레이의 회로모델이 제안되었다. 능동제어형 전계 에미터 어레이는 전계방출을 안정화시키고 저전력구동을 위한 수소화 된 비정질 실리콘 박막 트랜지스터와 Spindt형 Mo 전계 에미터 어레이로 구성되었고 같은 유리기판 위에 제작되었다. 비정질 박막 트랜지스터와 Spindt형 Mo 전계 에미터 어레이의 전기적 특성으로부터 추출된 기본 모델 변수는 제안된 능동제어형 전계 에미터 어레이 회로모델에 입력되었고 SPICE 회로 시뮬레이터를 사용하여 특성을 분석하였다. 제작된 소자의 측정값과 DC 시뮬레이션 결과를 비교한 결과 두 값이 상당히 일치함으로써 등가회로 모델의 정확성을 확인하였다. 또한 제작된 소자의 transient 시뮬레이션 결과 전계 에미터 어레이의 게이트 커패시턴스와 TFT의 구동능력이 반응시간에 가장 크게 영향을 끼치고 있음을 확인하였다. 제작된 능동제어형 전계방출 에미터 어레이는 pulse width modulation으로 구동하는 경우 15㎲의 반응시간을 얻었고 이 값으로는 4bit/color의 계조(gray scale)표현이 가능하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1269-1271
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• 2008

We find some array mura are caused by S/D bridge or channel open in 4 mask process. The gray tone PR thickness non-uniformity is the main reason of these defects. By the adjustment of exposure and dry etch parameters, S/D bridge and channel open ratio drops by 10.87%.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.330-332
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• 2009

Highly stable bottom gate thin film transistors(TFTs) with a zinc indium tin oxide(Zn-In-Sn-O:ZITO) channel layer have been fabricated by rf-magnetron co-sputtering using a indium tin oxide(ITO:90/10), a tin oxide and a zinc oxide targets. The ZITO TFT (W/L=$40{\mu}m/20{\mu}m$) has a mobility of 24.6 $cm^2$/V.s, a subthreshold swing of 0.12V/dec., a turn-on voltage of -0.4V and an on/off ratio of >$10^9$. When gate field of $1.8{\times}10^5$ V/cm was applied with source-drain current of $3{\mu}A$ at $60^{\circ}C$, the threshold voltage shift was ~0.18 V after 135 hours. We fabricated AM-OLED driven by highly stable bottom gate Zn-In-Sn-O TFT array.

• Korean Journal of Digital Imaging in Medicine
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• v.6 no.1
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• pp.24-30
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• 2003

Flat-panel detector(FPD) is the driving force for realizing the next gene ration of x-ray system. In this study, we developed amorphous selenium(a-Se) based flat-panel digital X-ray detector(DXD) for radiography. The prototype detector consists of an amorphous selenium layer and a thin-film transistor(TFT) array. Comparing to other papers1)-4), optimization of amorphous selenium and progress of evaporation were similar. The pixel pitch of fabricated detector was $139{\mu}m$, fill factor was 86%, and the size was 14"${\times}$8.5". Hand and test bar pattern images were acquired. A high modulation transfer function(MTF) factor was obtained: 58% at 3.0 lp/mm.

• Design & Manufacturing
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• v.2 no.2
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• pp.29-32
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• 2008

A back light unit (BLU) is a key module of a thin film transistor liquid crystal display (TFT-LCD), frequently utilized in various mobile displays. In this study, we experimentally characterize transcription and optical properties of concave and convex microlens arrays (MLAs) of light guide plate (LGP) fabricated by injection molding with polycarbonate as a LGP substrate material. Nickel mold inserts were manufactured by electroforming on the MLA which was fabricated by the thermal reflow of photoresist microstructures patterned by UV-photolithography. For the case of convex microlens, the height of replicated microlens was less than that of the mold insert while maintaining almost the same microlens diameter of the mold insert as the location of the microlens is far from the gate. In contrast, for the concave microlens, the diameter of replicated microlens was larger than that of mold insert, while showing almost the same microlens height as the mold insert. From the optical examination of replicated convex and concave MLAs, it was found that a higher luminance of the LGP was achieved by the concave MLAs compared to the convex MLAs (about 30% enhancement in this case)due to the utilization of a larger amount of light provided by the light sources.

• Journal of Sensor Science and Technology
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• v.29 no.5
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• pp.332-335
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• 2020

Drop casting, a solution process, is a simple low-cost fabrication technique that does not waste material. In this study, we elucidate the effect of the concentration of a InGaZnO solution on the electrical properties of drop-cast oxide thin-film transistors. The higher the concentration the larger the amount of remnant InGaZnO solutes, which yields a thicker thin film. Accordingly, the electrical properties were strongly dependent on the concentration. At a high concentration of 0.3 M (or higher), a large current flowed but did not lead to switching characteristics. At a concentration lower than 0.01 M, switching characteristics were observed, but the mobility was small. In addition to a high mobility, sufficient switching characteristics were obtained at a concentration of 0.1 M owing to the appropriate thickness of the semiconductor layer. This study provides a technical basis for the low-cost fabrication of switching devices capable of driving a sensor array.