• Title/Summary/Keyword: TFT Array

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Fabrication of Pixel Array using Pentacene TFT and Organic LED (펜타센 TFT와 유기 LED로 구성된 픽셀 어레이 제작)

  • Choe Ki Beom;Ryu Gi Seong;Jung Hyun;Song Chung Kun
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.42 no.12
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    • pp.13-18
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    • 2005
  • In this paper, we fabricated a pixel array in which each pixel was consisted of Organic Thin Film Transistor (OTFT) serially connected with Organic Light Emitting Diode (OLED) on Poly-ethylene-terephthalate (PET) substrate and the number of pixels was 64 x 64. As a gate insulator of OTFT, the thermally cross-linked PVP was used and the organic semiconductor, Pentacene, is deposited for an active layer of OTFT considering the compatibility with PET substrate. The mobility of OTFT is $1.0\;cm^2/V{\cdot}sec$ as a discrete device, but it was reduced to $0.1\~0.2\;cm^2/V{\codt}sec$ in the array. We analyzed the operation of the array and confirmed the current driving ability of OTFTs for the OLEDs.

Design of Interface Module for Driving of Image Processing Using FPGA (FPGA를 이용한 영상처리 구동을 위한 정합모듈 설계)

  • Jung, Sung-Hyuck;Kim, Jung-Tae
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.14 no.9
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    • pp.2071-2077
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    • 2010
  • Interface modules design between image sensor and external components are designed by FPGA (Field Programmable Gate Array) in this paper. Generally speaking, to satisfy synchronization for the poor quality data in image, SRAM is needed. To receive synchronization signal and image signal data with pixel dimension, the proposed interface logic technique is implemented. From the proposed technique, we can obtain more clear screen by implementing with pixel dimension. Operating frequency of image sensor and that of TFT-LCD are 50MHz and 6.5MHz, respectively. Most of control logic functions are embedded in FPGA. The designed logic gate counter has 33,216 and is designed by Quartus II.

Optimized Gate Driving to Compensate Feed-through Voltage for $C_{ST}-on-Common$

  • Jung, Soon-Shin;Yun, Young-Jun;Park, Jae-Woo;Roh, Won-Yeol;Choi, Jong-Sun
    • 한국정보디스플레이학회:학술대회논문집
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    • 2000.01a
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    • pp.73-74
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    • 2000
  • In recent years, attempts have been made to greatly improve the display quality of active-matrix liquid crystal display devices, and many techniques have been proposed to solve such problems as gate signal delay, feed-through voltage and image sticking[1-3]. To improve these problems which are caused by the feed-through voltage, we have evaluated new driving methods to reduce the feed-through voltage. Two level gate-pulse was used for the gate driving of the cst-on-common structure pixels. These gate driving methods offer better feed-through characteristics than conventional simple gate pulse. Optimized step signal will compensate by step pulse time and voltage. The evaluation of the suggested driving methods were performed by using a TFT-LCD array simulator PDAST which can simulate the gate, data and pixel voltages of a certain pixel at any time and at any location on a TFT array. The effect of the new driving method was effectively analyzed.

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Circuit Modeling and Simulation of Active Controlled Field Emitter Array for Display Application (디스플레이 응용을 위한 능동 제어형 전계 에미터 어레이의 회로 모델링 및 시뮬레이션)

  • Lee, Yun-Gyeong;Song, Yun-Ho;Yu, Hyeong-Jun
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.38 no.2
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    • pp.114-121
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    • 2001
  • A circuit model for active-controlled field emitter array(ACFEA) as an electron source of active-controlled field emission display(ACFED) has been proposed. The ACFEA with hydrogenated amorphous silicon thin-film transistor(a-Si:H TFT) and Spindt-type molibdenum tips (Spindt-Mo FEA) has been fabricated monolithically on the same glass. A-Si:H TFT is used as a control device of field emitters, resulting in stabilizing emission current and lowering driving voltage. The basic model parameters extracted from the electrical characteristics of the fabricated a-Si:H TFT and Spindt-Mo FEA were implemented into the ACFEA model with a circuit simulator SPICE. The accuracy of the equivalent circuit model was verified by comparing the simulated results with the measured one through DC analysis of the ACFEA. The transient analysis of the ACFEA showed that the gate capacitance of FEA along with the drivability of TFT strongly affected the response time. With the fabricated ACFEA, we obtained a response time of 15$mutextrm{s}$, which was enough to make 4bit/color gray scale with the pulse width modulation (PWM).

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Image Quality Evaluation of Digital X-Ray Detector Using Amorphous Selenium Layer and Amorphous Silicon TFT Array (비정질 셀레늄층과 비정질 실리콘TFT배열을 사용하는 디지털 X-선 검출기의 영상특성 평가)

  • Kim, Chang-Won;Yoon, Jeong-Key;Kim, Jong-Hyo
    • Progress in Medical Physics
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    • v.19 no.4
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    • pp.219-226
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    • 2008
  • In this study, we have conducted characterization of imaging performance for a flat panel digital X-ray detector using amorphous Selenium and a-Si TFT which was developed by the authors. The procedures for characterization were in concordance with internationally recommended standards such as IEC (international electrotechnical commission). The measures used for imaging performance characterization include response characteristic, modulation transfer function (MTF), detective quantum efficiency (DQE), noise power spectrum (NPS), and quantum limited performance. The measured DQEs at lowest and highest spatial frequencies were 40% and 25% respectively, which was superior to that of commercial products by overseas vendor. The MTF values were significantly superior to that of CR and indirect type DRs. The quantum limited performance showed the detector was limited by quantum noise at the entrance exposure level below 0.023 mR, which is sufficiently low for general X-ray examination.

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Seperate Driving System For Large Area X-ray Detector In Radiology (대면적 X-ray 검출기를 위한 분할 구동 시스템)

  • Lee, D.G.;Park, J.K.;Kim, D.H.;Nam, S.H.;Ahn, S.H.;Park, H.D.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.11a
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    • pp.388-391
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    • 2003
  • The properties of these detectors can be controlled by electronics and exposure conditions. Flat-panel detectors for digital diagnostic imaging convert incident x-ray images to charge images. Flat panel detectors gain more interest real time medical x-ray imaging. Active area of flat panel detector is $14{\times}17$ inch. Detector is based on a $2560{\times}3072$ away of photoconductor and TFT pixels. X-ray conversion layer is deposited upper TFT array flat panel with a 500m by thermal deposition technology. Thickness uniformity of this layer is made of thickness control technology(5%) of thermal deposition system. Each $139m{\times}139m$ pixel is made of thin film transistor technology, a storage capacitor and charge collection electrode having geometrical fill factor of 86%. Using the separate driving system of two dimensional mosaic modules for large area, that is able to 4.2 second per frame. Imaging performance is suited for digital radiography imaging substitute by conventional radiography film system..

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4" E-ink Active-matrix Displays based on Ink-jet Printed Organic Thin Film Transistors

  • Koo, Bon-Won;Kim, Do-Hwan;Moon, Hyun-Sik;Kim, Jung-Woo;Jung, Eun-Jeong;Kim, Joo-Young;Jin, Yong-Wan;Lee, Sang-Yun;Kim, Jong-Min
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.1631-1633
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    • 2008
  • We demonstrate 4-in QVGA active-matrix electrophoretic display based on ink-jet printed organic transistors on glass substrates. Our TFT array had a bottom-gate, bottom-contact device architecture. The organic semiconductor and gate dielectric were solution processed. The field-effect mobility of the printed devices, calculated in the saturation region, was $0.1{\sim}0.3cm^2/Vs$ at Vg=-20 V.

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Near $100^{\circ}C$ low temperature a-Si TFT array fabrication on 7 inch flexible PES substrates

  • Nikulin, Ivan V.;Hwang, Tae-Hyung;Jeon, Hyung-Il;Kim, Sang-Il;Roh, Nam-Seok;Shin, Seong-Sik
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.434-438
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    • 2006
  • High-quality a-Si TFTs were fabricated on 7 inch plastic PES substrates at $130^{\circ}C$ and $100^{\circ}C$. It had been shown that the key factor for successful TFT fabrication on the relatively large plastic substrates is thorough control of total active layer's stress by means of deposition temperature reduction and single layer's intrinsic stress optimization.

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Nanoparticle Cleaning of AMLCD Backplane

  • Oh, J.H.;Kang, D.H.;Choi, M.H.;Kim, S.H.;Choo, B.K.;Hur, J.H.;Jang, J.;Kim, I.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.1425-1428
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    • 2006
  • We have proposed a novel cleaning technology with organic nanoparticles for high-performance TFT array. The surface of the TFT layer becomes more hydrophilic after cleaning by the nanoparticles. This is concluded from the comparison of contact angles for the samples cleaned by various methods. It is found that the drain currents in the subthreshold and off-state regions are less than those for the TFTs cleaned with conventional method.

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Recent Development of Optically Compensated Bend (OCB) Mode TFT-LCD

  • Wakemoto, Hirofumi;Nishiyama, Kazuhiro;Nakao, Kenji;Takimoto, Akio
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07a
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    • pp.562-566
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    • 2005
  • Toshiba Matsushita Display Technology (TMD) has firstly succeeded in mass production of OCB (Optically Compensated Bend) mode liquid crystal display panels which have excellent moving picture quality almost the same as CRT. We have newly developed 32 -inch diagonal HD ($1366{\times}768\;pixels$) panels using OCB mode and low temperature p-Si TFT (LTPS) array substrates. High performance of brightness of $600cd/m^2$ and contrast ratio of 600 : 1 was obtained by using pseudo-impulse driving method to insert a black period between continuous two frames, and also by using blinking backlight method. Furthermore, moving picture response time (MPRT) 6.5ms has been obtained by optimization of black insert driving and backlight blinking, without the great sacrifices of contrast ratio and luminance.

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