• Journal of the Korean institute of surface engineering
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• 제51권2호
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• pp.110-115
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• 2018

The Na low temperature gettering in $SiO_2/PSG/SiO_2/Al-1%Si$ and $SiO_2/TEOS/SiO_2/Al-1%Si$ multilevel thin films was investigated using dynamic SIMS(secondary ion mass spectrometry) analysis. DC magnetron sputter, APCVD and PECVD techniques were utilized for the deposition of Al-1%Si thin films, $SiO_2/PSG/SiO_2$ and $SiO_2/TEOS/SiO_2$ passivations, respectively. Heat treatment was carried out at $300^{\circ}C$ for 5 h in air. SIMS depth profiling was used to determine the distribution of Na, Al, Si and other elements throughout the $SiO_2/PSG/SiO_2/Al-1%Si$ and $SiO_2/TEOS/SiO_2/Al-1%Si$ multilevel thin films. XPS was used to analyze chemical states of Si and O elements in $SiO_2$ passivation layers. Na peaks were observed throughout the $PSG/SiO_2$ and $TEOS/SiO_2$ passivation layers on the Al-1%Si thin films and especially at the interfaces. Na low temperature gettering in $SiO_2/PSG/SiO_2/Al-1%Si$ and $SiO_2/TEOS/SiO_2/Al-1%Si$ multilevel thin films is considered to be caused by a segregation type of gettering.

• Korean Journal of Materials Research
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• 제2권1호
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• pp.76-82
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• 1992

Deposition of $TEOS-O_3$ oxide film as inter-metal dielectric layer shows the substrate dependency according to the substrate material and pattern density and pitch size. To minimize substrate and Pattern dependency, TEOS-base and $SiH_4-base$ Plasma oxide were predeposited as underlying material on the substrate. The substrate dependency of $TEOS-O_3$ oxide film was more significant on TEOS-base plasma oxide than on $SiH_4-base$ plasma oxide. The dependency of $TEOS-O_3$ oxide film was remarkably reduced, or nearly eliminated, by $N_2$plasma treatment on TEOS-base plasma oxide, which appears to be caused by the O-Si-N structure, observed on the the surface of TEOS-base plasma oxide.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.295-296
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• 2005

Poly-Silicon Thin Film Transistor 응용을 위한 $SiO_2$ 박막 성장에 관한 연구로서 기존의 ICP-CVD를 이용한 실험에서 $SiH_4$ 가스대신 유기 사일렌 반응물질인 TEOS(TetraethylOrthosilicate) Source를 이용하여 APCVD 법으로 성장시켰다. $SiO_2$ 박막은 반도체 및 디스플레이 분야에서 필드산화막, 보호막, 게이트 절연막 등으로 사용되며, 이러한 산화막 증착을 TEOS를 이용하였고, 빠른 증착과 더 좋은 특성을 갖는 박막 형성을 위하여 $O_2$ 반응가스를 이용하였고, Ellipsometor, XPS 등을 이용하여 계면 특성 분석을 하였다.

• Journal of the Korean Ceramic Society
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• 제31권2호
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• pp.206-212
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• 1994

Effects of the film deposition process parameters on the properties such as deposition rate, etch rate, refractive index, stress and step coverage of plasma enhanced chemical vapor deposited (PECVD) tetraethylorthosilicate glass (TEOS) SiO2 film were investigated and analysed using SEM, FTIR and SIMS techniques. Increasing TEOS flow or decreasing O2 flow increased the deposition rate and the compressive stress of the oxide film but produced a less denser film. The deposition rate decreased owing to the decrease in the sticking coefficient of the TEOS and the O2 molecules onto the substrate Si with increasing the substrate temperature. Increasing the substrate temperature produced a denser film with a lower etch rate and the higher refractive index by lowering SiOH and moisture contents. Increasing the rf power increases the ion bombardment energy. This increase in energy, in turn, increases the deposition rate and tends to make the film denser. No appreciable changes were found in the deposition rate but the refractive index and the stress of the film decreased with increasing the deposition pressure. The carbon content in the plasma TEOS CVD oxide film prepared under our standard deposition conditions were very low according to the SIMS analysis results.

• Applied Chemistry for Engineering
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• 제8권2호
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• pp.301-307
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• 1997

Monodisperse, spherical $SiO_2/TiO_2$ composite fine powders were prepared by modified Sol-Gel process which $TiO_2$ fine Powders was used as a seed particles for condensation of TEOS (Tetraethyl Orthosilicate). The reaction was carried out under $N_2$ atmosphere at ambient temperature using $NH_3$ as a catalyst. Ethanol was used as a solvent. Drying process was carried out with vacuum trap which cooled by liquid $N_2$. The reaction variables were the concentration of TEOS, the concentration of ammonia, the size of $TiO_2$ seed and molar ratio of $SiO_2/TiO_2$. The optimum condition for the preparation of $SiO_2/TiO_2$ composite fine powders without agglomeration was [TEOS]=0.3M, [$NH_3$]=0.7M, size of $SiO_2/TiO_2$ seed = 200~300nm.

• Korean Membrane Journal
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• 제3권1호
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• pp.69-74
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• 2001

Films of TiO$_2$/SiO$_2$ were deposited on the inner surface of the porous glass support tubes by decomposition of tetraisopropyl titanate (TIPT) and tetraethyl orthosilicate (TEOS) at atmospheric pressure. Dense and hydrogen -permselective membranes were formed at 400-600$\^{C}$. The permeation rates of H$_2$ through the membrane at 600$\^{C}$ were 0.2-0.4 ㎤(STP)/min-㎠ atm and H$_2$:N$_2$permeation ratios were above 1000. The permeation properties of the membranes were investigated at various deposition temperatures and TIPT/TEOS concentrations. Decomposition of TIPT alone at temperatures above 400$\^{C}$ produced porous crystalline TiO$_2$ films and they were not H7-selective. Decomposition of TEOS produced H$_2$-permeable SiO$_2$ films at 400-600$\^{C}$ but film deposition rate was very low. Addition of TIFT to the TEOS stream significantly accelerated the deposition rate and produced highly H$_2$-selective films. Increasing the TIPT/TEOS concentration ratio increased the deposition rate. The TiO$_2$/SiO$_2$ membranes formed at 600 $\^{C}$ have the permeation properties comparable to those of SiO$_2$ membranes produced from TEOS.

• Korean Journal of Materials Research
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• 제9권2호
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• pp.144-148
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• 1999

We have studied the deposition characteristics of thick silicon dioxide film on Si substrate by $O_3$/TEOS APCVD(Atmospheric Pressure Chemical Vapor Deposition). The effect of deposition parameters such as the distance between showerhead and substrate, deposition temperature, TEOS flow rate and $O_3$/TEOS ratio on deposition rate, surface morphology, and properties of films as investigated. As deposition temperature increased, deposition rate decreased but the surface morphology and adhesion of film to substrate improved. As the distance between showerhead and substrate decreased, the deposition rate increased. Etching rate using the BOE increased as TEOS flow rate increased, but was independent of$ O_3$/TEOS ratio. Deposition rate of $5\mu\textrm{m}$/hour was obtained under the condition that the distance between showerhead and substrate was 5mm and the deposition temperature was $370^{\circ}C$.

• Proceedings of the KSME Conference
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• 대한기계학회 2000년도 추계학술대회논문집B
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• pp.174-179
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• 2000

Ultrafine particles have been used widely in many high technology industrial areas. The spherical nonagglomerated and uniform nanometer-size $SiO_2$ particles are synthesized by the direct injection of TEOS(Tetraethyorthosilicate) using electro-hydrodynamic spray ins method. Electro-hydrodynamic spray can generate in the range of submicron-size TEOS particles with high electric charge by applying a high electric field between the liquid injection nozzle and the reaction tube. This TEOS particles are thermally decomposed or oxidized to produce nanometresized $SiO_2$ particles in the reaction tube. Spherical, nonagglomerated and ultrafine particle generated and examined at furnaced temperature, $800^{\circ}C$ and TEOS flowrate of 0.49 or $1.00cm^3/hr$ using SEM and SMPS. As the total gas flowrate changes from 1.51pm to 5.01pm, the mean diameter of $SiO_2$ particle decreases from 120 nm to 68nm.

• Transactions of the Korean Society of Mechanical Engineers B
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• 제25권5호
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• pp.660-665
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• 2001

Ultrafine particles have been widely used in many high technology industrial areas. The spherical nonagglomerated and uniform nanometer-size SiO$_2$particles are synthesized by the direct injection of TEOS(Tetraethyorthosilicate) using electro-hydrodynamic spraying method. Electro-hydrodynamic spraying can generate submicron-size TEOS droplets having high electric charges by applying a high electric field between the liquid injection nozzle and the reaction tube. These TEOS droplets are evaporated, and thermally decomposed or oxidized to produce nanometresized SiO$_2$particles in the reaction tube. Spherical, nonagglomerated and ultrafine particles are generated in various conditions and examined by using SEM and SMPS. As the total gas flow rate in the furnace changes from 1.5 lpm, the mean diameter of SiO$_2$particle decreases from 120 nm to 68 nm. The synthesized particle charging fractions are also investigated.

• Journal of the Korean Electrochemical Society
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• 제16권3호
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• pp.184-189
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• 2013

$Ba_2SiO_4:Eu^{2+}$ ($B_2S:Eu^{2+}$) powders were prepared by firing the dry gel obtained by the sol-gel and the hybrid process (sol-gel and combustion), respectively, and their structure and luminescence were investigated. Tetraethyl orthosilicate (TEOS) was used as a Si source. The phase transition was observed with the TEOS content. With 1.2M TEOS, the powders prepared by the sol-gel process without prior calcination were composed of the $B_2S:Eu^{2+}$ single phase, whereas those by the sol-gel and the hybrid process with prior calcination consisted of the dominant $B_2S:Eu^{2+}$ and minor $BaSiO_3:Eu^{2+}$ ($BS:Eu^{2+}$) phases and their emission intensities were approximately two times higher than those without prior calcination. The hybrid process could reduce the process time innovatively compared to the sol-gel process, even though the former was a little inferior to the latter in the emission intensity of $B_2S:Eu^{2+}$. With 1.1M TEOS, the $B_2S:Eu^{2+}$ single phase was obtained by the hybrid process, and its green emission was observed at 505 nm originated from the $4f^65d^1{\rightarrow}4f^7$ transition of $Eu^{2+}$ ions.