• Journal of Educational Research in Mathematics
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• v.20 no.3
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• pp.397-411
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• 2010

In this paper, definitions of biyoul and value of bi in elementary mathematics in Korea are critically analysed. And identity of halpunri is reviewed. Regarding biyoul, it is suggested that the use of term 'biyoul' is restricted to such cases when the quantity to be compared and the quantity to be a base have same measuring unit, without consider ing biyoul in terms of two numbers. it is suggested to use "the number which express how many times the quantity to be compared is contained by the quantity to be a base is called biyoul." as a definition of biyoul. It is suggested to use "value of bi A : B is A/B" as a definition of value of bi. Halpunri is a variation of halbunri, which is coined by putting hal, pun, and ri together in purpose of using in school mathematics. The tem1 corresponding halpunri is 'bohap', however, in this paper it is suggested to use halpunri after defining it instead of using bohap. In that halpunri is an acclimatized term of bohap, and considered as a biyoul not as a way to indicate biyoul, it is suggested to use "biyoul when the quantity to be a base is considered 10." as a definition of halpunri. It is suggested to see hal, pun, and ri are units for halpunri, and call decimal 0.1 expressing biyoul 1 hal, decimal 0.01 expressing biyoul 1 pun, decimal 0.001 expressing biyoul 1 ri respectively.

• Journal of Veterinary Clinics
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• v.28 no.6
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• pp.576-580
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• 2011

Silver has potent antibacterial activity against a variety of bacteria while maintaining low toxicity in mammalian cells. This study was conducted to investigate the possible mechanism underlying the bactericidal effects of silver ions against bovine mastitis pathogens using electron microscopy. We used two different bacterial strains, Escherichia coli and Staphylococcus aureus, which are primarily responsible for the majority of bovine mastitis cases. Interaction between the bacteria and silver ions (50 ${\mu}g/mL$, 2 hours) were studied using energy-filtering transmission electron microscopy (EFTEM). EFTEM images showed that E. coli and S. aureus cells treated with the silver ions had distorted plasma membranes, silver ions attached to the outer membranes, scattered electron-light material, and leakage of cell contents from disrupted cell membranes.

• Journal of Welding and Joining
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• v.33 no.5
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• pp.26-30
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• 2015

Hastelloy X in this study was applied in jet engine F-15 air fighter as shroud to isolate the engine from outer skin. After 15 years operation at elevated temperature the mechanical properties decreased gradually due to the precipitation of continues second phases in the grain boundaries and precipitated inside the grain. The crack happened at the edge of the shroud due to the thermal and mechanical stress from jet engine. Selective TEM analysis found that the grain boundaries consist of $M_{23}C_6$ carbide, $M_6$ Ccarbide and small percentage of sigma(${\sigma}$) phase. Furthermore, it was confirmed the nano size of ${\sigma}$ and miu (${\mu}$) phase inside the grain. In this study, it was investigated the microstructure of the degraded shroud component and HAZ of repair welded shroud. In the HAZ, it was observed the dissolution of the $M_{23}C_6$ carbides and smaller precipitates, the migration of the undissolved larger $M_{23}C_6$ carbide and $M_6$ Ccarbide. It is also observed the liquation due to the simply melt of the segregated precipitates in the grain boundaries. Interestingly, the segregated second phases which simply melt in the grain boundaries more easily happened at higher heat input welding condition. High temperature tensile test was done at $300^{\circ}C$, $700^{\circ}C$ and $900^{\circ}C$. It was obtained that the toughness of welded sample is lower compare to the non-welded sample. The solution heat treatment at $1170^{\circ}C$ for 5 minutes was suggested to obtain a better mechanical properties of the shroud. The high cycle fatigue number of the repair welded shroud shows a much lower compare to the shroud. In addition, the high cycle fatigue number at room temperature after solution heat treatment was almost double compare to the before solution heat treatment under 420-500MPa stress amplitude. However, the high cycle fatigue number of repaired welded sample was shown a much lower compare to the non- welded shroud and solution treated shroud. One of the main reasons to decrease the tensile strength and the high cycle fatigue properties of the repair welded shroud is the formation of the liquid phase in HAZ.

• Korean Journal of Materials Research
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• v.4 no.1
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• pp.9-23
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• 1994

Epitaxial $CoSi_2$ layer has been grown on NaCl(100) substrate at low deposition temperature($200^{\circ}C$) by multitarget bias cosputter deposition(MBCD). The phase sequence and crystallinity of deposited silicide as a function of deposition temperature and substrate bias voltage were studied by X-ray diffraction(XRD) and transmission electron microscopy(TEM) analysis. Crystalline Si was grown at $200^{\circ}C$ by metal induced crystallization(M1C) and self bias effect. In addition to, the MIC was analyzed both theoretically and experimentally. The observed phase sequence was $Co_2Si \to CoSi \to Cosi_2$ and was in good agreement with that predicted by effective heat of formation rule. The phase sequence, the CoSi(l11) preferred orientation, and the crystallinity had stronger dependence on the substrate bias voltage than the deposition temperature due to the collisional cascade mixing, the in-situ cleaning, and the increase in the number of nucleation sites by ion bombardment of growing surface. Grain growth induced by ion bombardment was observed with increasing substrate bias voltage at $200^{\circ}C$ and was interpreted with ion bombardment dissociation model. The parameters of $E_{Ar}\;and \alpha(V_s)$ were chosen to properly quantify the ion bombardment effect on the variation in crystallinty at $200^{\circ}C$ with increasing substrate bias voltage using Langmuir probe.

• Korean Journal of Materials Research
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• v.4 no.6
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• pp.687-694
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• 1994

Heteroepitaxial InP/GaAs layers were grown using the selective liquid phase epitaxy (SLPE) technique. It was observed that the optimum LPE conditions were $660^{\circ}C$ growth temperature, $5^{\circ}C$ supercooling, and $0.4^{\circ}C$/min cooling rate. Maximum expitaxial layer overgrowth (ELO) of 110-160$\mu \textrm{m}$ was obtained when the seed was aligned along (112) orientation. Initial melt-back of the substrate was observed but limited to the seed region so that flat In-Ga-As-P layers were grpwn throughout the GaAs substrates. The InP/GaAs heteroepitaxial structure could be obtained by growing an additional InP layer on top of the In-Ga-As-P layer.

• Korean Journal of Materials Research
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• v.10 no.3
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• pp.223-226
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• 2000

The oxygen deficient ferrites $(Ni_x,\; Zn_{1-x})Fe_2O_{4-{\delta}}$ can decompose $CO_2$ as C and $O_2$ at a low temperature of about $300^{\circ}C$. Ultra powders of $(Ni_x,\; Zn_{1-x})Fe_2O_4$ for the $CO_2$ decomposition were prepared by the hydrothermal methods. The XRD result of synthesized ferries showed the spinel structure of ferrites and ICP-AES and EDS quantitative analyses showed the composition similar with the starting molar ratios of the mixed solution prior to reaction. The BET surface area of the synthesized(Ni, Zn)-ferrites was above $110\textrm{m}^2/g$ and its particle size was very as small as about 5~10 nm. The $CO_2$ decomposition efficiency of the oxygen deficient ferrites($(Ni_x,\;Zn_{1-x})Fe_2O_{4-{\delta}}$) was almost independent with composition and the $CO_2$ decomposition efficiency of ternary (Ni, Zn)-ferrites was better than of binary Ni-ferrites.

• Korean Journal of Materials Research
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• v.4 no.1
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• pp.81-89
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• 1994

Ti film of lOnm thickness and Co film of 18nm thickness were sequentially e-heam evaporated onto Si (100) substrates. Metal deposited samples were rapidly thermal-annt.aled(KTA) in thr N1 en vironment a t $900^{\circ}C$ for 20 sec. to induce the reversal of metal bilayer, so that $CoSi_{2}$ thin films could be formed. The sheet resistance measured by the 4-point probe was 3.9 $\Omega /\square$This valur was maintained with increase in annealing time upto 150 seconds, showing high thermal stab~lity. Thc XRII spectra idrn tified the silicide film formed on the Si substrate as a $CoSi_{2}$ epitaxial layer. The SKM microgr;iphs showed smooth surface, and the cross-sectional TKM pictures revealed that the layer formed on the Si substrate were composed of two Co-Ti-Si alloy layers and 70nm thick $CoSi_{2}$ epl-layer. The AES analysis indicated that the native oxide on Si subs~rate was removed by TI ar the beginning of the RTA, and Ihcn that Co diffused to clean surface of Si substrate so that epitaxial $CoSi_{2}$ film could bt, formed. In thc rasp of KTA at $700^{\circ}C$. 20sec. followed by $900^{\circ}C$, 20sec., the thin film showed lower sheet resistance, but rough surface and interface owing to $CoSi_{2}$ crystal growth. The application scheme of this $CoSi_{2}$ epilayer to VLSI devices and the thermodynarnic/kinetic mechan~sms of the $CoSi_{2}$ epi-layer formation through the reversal of Co/Ti bdayer were discussed.

• Korean Journal of Materials Research
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• v.20 no.11
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• pp.606-610
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• 2010

Films consisting of a silicon quantum dot superlattice were fabricated by alternating deposition of silicon rich silicon nitride and $Si_3N_4$ layers using an rf magnetron co-sputtering system. In order to use the silicon quantum dot super lattice structure for third generation multi junction solar cell applications, it is important to control the dot size. Moreover, silicon quantum dots have to be in a regularly spaced array in the dielectric matrix material for in order to allow for effective carrier transport. In this study, therefore, we fabricated silicon quantum dot superlattice films under various conditions and investigated crystallization behavior of the silicon quantum dot super lattice structure. Fourier transform infrared spectroscopy (FTIR) spectra showed an increased intensity of the $840\;cm^{-1}$ peak with increasing annealing temperature due to the increase in the number of Si-N bonds. A more conspicuous characteristic of this process is the increased intensity of the $1100\;cm^{-1}$ peak. This peak was attributed to annealing induced reordering in the films that led to increased Si-$N_4$ bonding. X-ray photoelectron spectroscopy (XPS) analysis showed that peak position was shifted to higher bonding energy as silicon 2p bonding energy changed. This transition is related to the formation of silicon quantum dots. Transmission electron microscopy (TEM) and electron spin resonance (ESR) analysis also confirmed the formation of silicon quantum dots. This study revealed that post annealing at $1100^{\circ}C$ for at least one hour is necessary to precipitate the silicon quantum dots in the $SiN_x$ matrix.

• Korean Journal of Materials Research
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• v.20 no.11
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• pp.586-591
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• 2010

Solar cells have been more intensely studied as part of the effort to find alternatives to fossil fuels as power sources. The progression of the first two generations of solar cells has seen a sacrifice of higher efficiency for more economic use of materials. The use of a single junction makes both these types of cells lose power in two major ways: by the non-absorption of incident light of energy below the band gap; and by the dissipation by heat loss of light energy in excess of the band gap. Therefore, multi junction solar cells have been proposed as a solution to this problem. However, the $1^{st}$ and $2^{nd}$ generation solar cells have efficiency limits because a photon makes just one electron-hole pair. Fabrication of all-silicon tandem cells using an Si quantum dot superlattice structure (QD SLS) is one possible suggestion. In this study, an $SiO_x$ matrix system was investigated and analyzed for potential use as an all-silicon multi-junction solar cell. Si quantum dots with a super lattice structure (Si QD SLS) were prepared by alternating deposition of Si rich oxide (SRO; $SiO_x$ (x = 0.8, 1.12)) and $SiO_2$ layers using RF magnetron co-sputtering and subsequent annealing at temperatures between 800 and $1,100^{\circ}C$ under nitrogen ambient. Annealing temperatures and times affected the formation of Si QDs in the SRO film. Fourier transform infrared spectroscopy (FTIR) spectra and x-ray photoelectron spectroscopy (XPS) revealed that nanocrystalline Si QDs started to precipitate after annealing at $1,100^{\circ}C$ for one hour. Transmission electron microscopy (TEM) images clearly showed SRO/$SiO_2$ SLS and Si QDs formation in each 4, 6, and 8 nm SRO layer after annealing at $1,100^{\circ}C$ for two hours. The systematic investigation of precipitation behavior of Si QDs in $SiO_2$ matrices is presented.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.6 no.6
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• pp.457-460
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• 2005

Nano-sized titanium oxide and zirconium oxide powders were synthesized by hydrolysis of titanium isopropoxide $[Ti(OC_3H7)_4]$ and zirconium tetrachloride ($ZrC1_4$) via a sol-gel technique. Lead titanate powders were prepared by mixing $TiO_2$ precursors with PbO slurry made with dilute $NH_4OH$. Lead zirconate titanate powders were, then, synthesized by mixing $PbTiO_3$ with $ZrO_2$ powders. The goal of this research was to obtain the $PbZrTiO_3(PZT)$ powders and sintering these powders at low temperature. The $PbTiO_3$ and PZT powders after firing were analyzed by X-ray diffraction(XRD) and transmission electron microscopy(TEM) was utilized to observe the shape and size of the synthesized nano-particles. In the XRD pattern, the well-crystallized PZT phase could be obtained in consequence of firing at $900^{\circ}C$. SEM micrographs also showed that grains of PZT were relatively well grown with the size of the range of $2{\~}4{\mu}m$. The densified perovskite structure of $PbZrTiO_3$ could be obtained by sintering at temperature as low as $900^{\circ}C$. Characterization of the samples showed improved piezoelectric properties.