• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.5
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• pp.411-414
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• 2008

The germanium films were deposited by metal organic chemical vapor deposition using $Ge(allyl)_4$ precursors on TiAlN substrates. Deposition of germanium films was only possible with a presence of $Sb(iPr)_3$, which means that $Sb(iPr)_3$ takes a catalytic role by a thermal decomposition of $Sb(iPr)_3$ for Ge film deposition. Also, as Sb bubbler temperature increases, deposition rate of the Ge films increases at a substrate temperature of $370^{\circ}C$. The GeTe thin films were fabricated by MOCVD with $Te(tBu)_2$ on Ge thin film. The GeTe films were grown by the tellurium deposition at $230-250^{\circ}C$ on Ge films deposited on TiAlN electrode in the presence of Sb at $370^{\circ}C$. The GeTe film growth on Ge films depends on the both the tellurium deposition temperature and deposition time. Also, using $Sb(iPr)_3$ precursor, GeSbTe films with hexagonal structures were fabricated on GeTe thin films. GeSbTe films were deposited in trench structure with 200 nm*120 nm small size.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.197.2-197.2
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• 2015

Low-cost, high efficiency solar cells are tremendous interests for the realization of a renewable and clean energy source. ZnTe based solar cells have a possibility of high efficiency with formation of an intermediated energy band structure by impurity doping. In this work, the ZnTe:O/CdS/ZnO structure was fabricated by pulsed laser deposition (PLD) technique. A pulsed (10 Hz) Nd:YAG laser operating at a wavelength of 266 nm was used to produce a plasma plume from an ablated a ZnTe target, whose density of laser energy was 4.5 J/cm2. The base pressure of the chamber was kept at a pressure of approximately $4{\times}10-7Torr$. ZnO thin film with thickness of 100 nm was grown on to ITO/glass, and then CdS and ZnTe:O thin film were grown on ZnO thin film. Thickness of CdS and ZnTe:O were 50 nm and 500 nm, respectively. During deposition of ZnTe:O films, O2 gas was introduced from 1 to 20 mTorr. For fabricating ZnTe:O/CdS/ZnO solar cells, Au metal was deposited on the ITO film and ZnTe:O by thermal evaporation method. From the fabricated ZnTe:O/CdS/ZnO solar cell, current-voltage characteristics was measured by using HP 4156-a semiconductor parameter analyzer. Finally, solar cell performance was measured using an Air Mass 1.5 Global (AM 1.5 G) solar simulator with an irradiation intensity of 100 mW cm-2.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.18 no.4
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• pp.509-516
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• 2020

An important property of glass and ceramic solid waste forms is processability. Tellurite materials with low melting temperatures and high halite solubilities have potential as solid waste forms. Crystalline TiTe3O8 was synthesized through a solid-state reaction between stoichiometric amounts of TiO2 and TeO2 powder. The resultant TiTe3O8 crystal had a three-dimensional (3D) structure consisting of TiO6 octahedra and asymmetric TeO4 seesaw moiety groups. The melting temperature of the TiTe3O8 powder was 820℃, and the constituent TeO2 began to evaporate selectively from TiTe3O8 above around 840℃. The leaching rate, as determined using the modified American Society of Testing and Materials static leach test method, of Ti in the TiTe3O8 crystal was less than the order of 10-4 g·m-2·d-1 at 90℃ for durations of 14 d over a pH range of 2-12. The chemical durability of the TiTe3O8 crystal, even under highly acidic and alkaline conditions, was comparable to that of other well-known Ti-based solid waste forms.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.21-22
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• 2008

In the paper, we report several experimental data capable of evaluating the phase transformation characteristics of $Ag_x(Ge_2Sb_2Te_5)_{1-x}$ (x =0, 0.05, 0.1) thin films. The $Ag_x(Ge_2Sb_2Te_5)_{1-x}$ phase change thin films have been prepared by thermal evaporation. The crystallization characteristics of amorphous$Ag_x(Ge_2Sb_2Te_5)_{1-x}$ thin films were investigated by using nano-pulse scanner with 658 nm laser diode (power; 1~17 mW, pulse duration; 10~460 ns) and XRD measurement. It was found that the more Ag is doped, the more crystallization speed was 50 improved. In comparision with $Ge_2Sb_2Te_5$ thin film, the sheet resistance$(R_{amor})$ of the amorphous $Ag_x(Ge_2Sb_2Te_5)_{1-x}$ thin films were found to be lager than that of $Ge_2Sb_2Te_5$ film($R_{amor}$ $\sim10^7\Omega/\square$ and $R_{cryst}$ 10 $\Omega/\square$). That is, the ratio of $R_{amor}/R_{cryst}$ was evaluates to be $\sim10^6$ This is very helpful to writing current reduction of phase-change random acess memory.

• Journal of the Korean Magnetics Society
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• v.21 no.4
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• pp.127-131
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• 2011

In this paper, we study the electronic and magnetic properties of Cr substituted SiTe in the rock-salt structure compound using the full potential linearized augmented plane wave method within the generalized gradient approximation to the exchange correlation potential. Two stoichiometries are studied: $CrSi_3Te_4$ with 25 %, and $CrSiTe_2$ with 50 % Cr substitution. We found, from the total energy calculations, that the equilibrium lattice constant for cubic $CrSi_3Te_4$ is 11.64 a.u. and a = 7.89 a.u. and c = 11.13 a.u. for tetragonal $CrSiTe_2$. The integer value of the calculated magnetic moment per unit cell, $4{\mu}_B$ for $CrSiTe_2$ suggests that this compound is halfmetallic. The magnetic moment per unit cell for $CrSi_3Te_4$ is slightly larger than $4{\mu}_B$. The magnetic moment on Cr atoms are 3.61 and $3.62{\mu}_B$ in the $CrSi_3Te_4$ and $CrSiTe_2$, respectively. The presence of Cr atoms causes that the other atoms become slightly magnetized in both compounds. The electronic properties and the magnetism are discussed with the calculated spin-polarized density of states.

• Electrical & Electronic Materials
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• v.9 no.10
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• pp.1013-1018
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• 1996

The annealing effects of Au/Te/Au/n-GaAs structure was investigated by using x-ray diffraction, scanning electron microscope, the specific contact resistance and I-V measurement. Increasing the annealing temperature, the intensity of Au-Ga peak by X-ray diffraction was increased. The Ga$\_$2/Te$\_$3/peak got evident for the samples annealed at 400.deg. C and GaAs peak by recrystallization appeared for the samples annealed at 500.deg. C. The variation from the schottky to low resistance contact was confirmed by I-V curve. The lowest value of the specific contact resistance of the samples annealed at 500.deg. C was 3.8*10$\^$-5/.ohm.-cm$\^$2/ but the value increased above 600.deg. C.

• Korean Journal of Materials Research
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• v.7 no.1
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• pp.40-49
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• 1997

$Bi_{2}(Te_{0.9}Se_{0.1})_{3}$ thermoelectric matcrials havc 11et:n fahricxted hy mechanical alloying and hot pressing methods. Microstructure and thermoelectric properties of the hot 11resseii $Bi_{2}(Te_{0.9}Se_{0.1})_{3}$ have been investigated Lvith variations of hot pressing temperature and dopmt atltiition Formation of $Bi_{2}(Te_{0.9}Se_{0.1})_{3}$ alloy powders was completed by mechanical alloying of the as-mixed Ri. Te, arid Sc grmules of ~3.6mm size for 3 hours at ball-to-material weight ratio of 5 : 1. Figure of merit of $Bi_{2}(Te_{0.9}Se_{0.1})_{3}$ was markedly incrcwieti hy hot pressing at temperatures above $450^{\circ}C$, and value of $1.9{\times}10^{-3}/K$ was obtained for the specimen hot pressed at $550^{\circ}C$. With addition of 0.015 wt% Ri as acceptor dopant, figure of merit ol $Bi_{2}(Te_{0.9}Se_{0.1})_{3}$ hot pressed $550^{\circ}C$$2.1{\times}10^{-3}/K$.

• Korean Journal of Crystallography
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• v.7 no.1
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• pp.44-56
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• 1996

CuInTe2 synthesised in a horizontal electric furnace was found to be polycrystalline. Single crystals of CuInTe2 were grown with the vertical Bridgman technique. The structure, Hall effect of the crystals were measured in the temperature range 30 to 293K. Both the polycrystals and single crystals of CuInTe2 were tetragonal in structure. The lattice constants of the polycrytals were measured as a=6.168Å and c=12.499Å, with c/a=2.026, these of the single crystals were measured as a=6.186Å and c=12.453Å, with c/a=2.013. The growth plane of the oriented single crystals was confirmed to be a (112) plane from the back-reflection Laue patterns. The Hall effect of the CuInTe2 single crystals was measured with the method of van der Pauw The Hall data of the samples measured at room temperature showed a carrier concentration of 2.14×1023holes/m3, a conductivity of 739.58Ω-1m-1, and a mobility of 2.16×10 -2m 2/V·s for the sample perpendicular to the c-axis. Values of 1.51×1023holes/m3, 717.55Ω-1m-1, and 2.97×10-2 m2/V·s were obtained for the sample parallel to the c-axis. The Hall coefficients for the samples both perpendicular and parallel to the c-axis in the temperature range 30K to 293K were always positive values. Thus the CuInTe2 single crystal was determined to be a p-type semiconductor.

• Korean Chemical Engineering Research
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• v.50 no.6
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• pp.1082-1085
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• 2012

CdTe nanoribbons feature their unique optical properties compared with CdTe nanoparticles. Slow oxidation of tellurium ions on CdTe nanoparticles resulted in the organization of individual nanoparticle into nanoribbons. The light-controlled self-assembly of CdTe nanoparticles led to twisted ribbons. It was found that irradiation improved the oxidation of tellurium ions. Transmission electron microscopy (TEM) were performed to characterize the synthesized nanostructures and showed nanowires were twisted after self-assembly. The photoluminescence was slightly blue-shifted from 550 to 544 nm. This synthetic procedure could potentially provide a key step toward the fabrication of nanowires.

• Journal of Sensor Science and Technology
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• v.15 no.6
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• pp.379-385
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• 2006

Single crystal of p-$CdIn_{2}Te_{4}$ was grown in a three-stage vertical electric furnace by using Bridgman method. The quality of the grown crystal has been investigated by x-ray diffraction and photoluminescence measurements. From the photoluminescence spectra of the as-grown $CdIn_{2}Te_{4}$ crystal and the various heat-treated crystals, the ($D^{o}$, X) emission was found to be the dominant intensity in the photoluminescence spectrum of the $CdIn_{2}Te_{4}$:Cd, while the ($A^{o}$, X) emission completely disappeared in the $CdIn_{2}Te_{4}$:Cd. However, the ($A^{o}$, X) emission in the photoluminescence spectrum of the $CdIn_{2}Te_{4}$:Te was the dominant intensity like in the as-grown $CdIn_{2}Te_{4}$ crystal. These results indicated that the ($D^{o}$, X) is associated with $V_{Te}$ which acted as donor and that the ($A^{o}$, X) emission is related to $V_{Cd}$ which acted as acceptor, respectively. The p-$CdIn_{2}Te_{4}$ crystal was obviously found to be converted into n-type after annealing in Cd atmosphere. The origin of ($D^{o},{\;}A^{o}$) emission and its to phonon replicas is related to the interaction between donors such as $V_{Te}$ or $Cd_{int}$, and acceptors such as $V_{Cd}$ or $Te_{int}$. Also, the In in the $CdIn_{2}Te_{4}$ was confirmed not to form the native defects because it existed in a stable bonding form.