• Journal of Advanced Navigation Technology
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• v.17 no.2
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• pp.183-188
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• 2013

In this paper, the TE (Transverse Electric) scattering problems by a perfectly conducting strip grating over a grounded two dielectric layers with edge boundary condition are analyzed by applying the FGMM (Fourier Galerkin Moment Method). For the TE scattering problem, the induced surface current density is expected to the zero value at both edges of the strip, then the induced surface current density on the strip is expanded in a series of the multiplication of the Chebyshev polynomials of the second kind and the functions of appropriate edge boundary condition. The numerical results shown the fast convergent solution and good agreement compared to those of the existing papers.

• Journal of Physiology & Pathology in Korean Medicine
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• v.32 no.1
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• pp.30-34
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• 2018

This research was practiced to comparative investigate the distribution of sensory and motor neuron linkaged with Yangji(TE4) by using neural-tracer technology. A total 16 S-D rats were used in the present research. After anesthesia, the rats received micro-injection of $6{\mu}{\ell}$ of cholera toxin B subunit(CTB) into the relation positions of the Yangji(TE4), in the human body for observing the distribution of the linkaged sensory neurons in dorsal root ganglia(DRGs) and motor neurons in the spinal cord(C3~T4) and sympathetic ganglia. 3 days after the micro injection, the rats were anesthetized and transcardially perfused saline and 4% paraformaldehyde, followed by routine section of the DRGs, sympathetic chain ganglia(SCGs) and spinal cord. Marked neurons and nerve fibers were detected by immunohistochemical method and observed by light microscope. The marked neurons were recorded and counted. From this study the distribution of primary sensory and motor neurons linkaged with Yangji(TE4) were concluded as follows. Yangji(TE4) dominated by spinal segments of C5~T1, C6~T4, individually.

• Electrical & Electronic Materials
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• v.10 no.1
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• pp.39-44
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• 1997

Bulk type radiation detector of Au/Cd$_{1-x}$ Zn$_{x}$Te(x=20%)/Au structure using Cd$_{1-x}$ Zn$_{x}$Te(x=20%) wafer(3x4xl mm$^{3}$) grown by high pressure Bridgman method has been developed. We etched wafer surfaces with 2% Br-methanol solution and coated gold thin film on the surfaces by electroless deposition method for 5 min. in 49/o HAuCI$_{3}$ 4H20 solution. Initial etch rates of Cd, Zn and Te were 46%, 12% and 42% respectively. After etched, the surface of wafer was slightly revealed to Te rich condition. The leakage current was increased with etch time, but it didn't exceed 3nA at 50volt. The thickness of Au film was about 100nm by Rutherford Backscattering Spectroscopy(RBS). The resolution were 6.7% for 22.1 keV photon from 109 $^{109}$ Cd and 8.2% for 59.5 keV photon from $^{241}$ Am. The radiation detector such as Au/Cd$_{1-x}$ Zn$_{x}$Te(x=20%)/Au structure was more effective to monitor the low energy gamma radiation.iation.

• Journal of radiological science and technology
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• v.41 no.1
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• pp.25-31
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• 2018

This study aimed to evaluate the range of maximum TE that could measure T2 relaxation time accurately by setting diverse maximum TE with using contrast medium phantoms. Contrast medium phantoms ranging from low to high concentrations were made by using Gadoteridol. The relaxation time and relaxation rate were compared and evaluated by conducting T2 mapping by using reference data based on various TEs and data obtained from different maximum TEs. It was found that accurate T2 relaxation time could be expressed only when the maximum TE over a certain range was used in the section with long T2 relaxation time, such as the low concentration section of saline or gadolinium contrast medium. Therefore, the maximum TE shall be longer than the T2 relation time for accurately maturing the T2 relaxation of a certain tissue or a substance.

• Current Optics and Photonics
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• v.2 no.6
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• pp.589-594
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• 2018

We have investigated the dimensional nature of center-of-mass exciton confinement states in a CdMnTe/CdTe/CdMnTe heterostructure, where the CdTe well is too wide (144 nm) to confine both electrons and holes but able to confine whole excitons in the center-of-mass coordinate. Fine multiple photoluminescence spectra with a few meV separation were observed at 6 K. From the thickness dependence of the transition rate, they were attributed to even numbered center-of-mass exciton confinement states (N = 2, 4, 6, ${\cdots}$, 18). Dimensionality of the center-of-mass exciton confinement states was also investigated in terms of temperature dependence of radiative decay time. At low temperatures (${\leq}12K$), we found that the ground state excitons are likely localized possibly due to the barrier interface fluctuation, resulting in a constant decay time (~350 ps). With increased temperature (${\geq}12K$), localized excitons are thermally released, giving rise to a linear temperature dependence of radiative decay time as an evidence of two-dimensional nature.

• Current Optics and Photonics
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• v.3 no.2
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• pp.143-149
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• 2019

Shape ellipticity dependence of the exciton fine energy levels in CdTe and CdSe nanocrystal quantum dots were compared theoretically by considering the crystal structure and the Coulomb interaction of an electron and a hole. While quantum dot ellipticity changes from an oblate to prolate quantum dot via spherical shape, both the fine energy levels and the dipole moment in wurtzite structure of a CdSe quantum dot change linearly for ellipticity. In contrast, CdTe quantum dots were found to show a level crossing between the bright and dark exciton states with a significant change of the dipole moment due to the cubic structure. Shape ellipticity dependence of the optical nonlinearities in CdTe and CdSe nanocrystal quantum dots was also calculated by using semiconductor Bloch equations. For a spherical shape quantum dot, only $1^L$ dominates the optical nonlinearities in a CdSe quantum dot, but both $1^U$ and $0^U$ contribute in a CdTe quantum dot. As excitation pulse area becomes strong (${\sim}{\pi}$), the optical nonlinearities of both CdSe and CdTe quantum dots are mainly governed by absorption saturation. However, in the case of a prolate CdTe quantum dot, the real part of the nonlinear refractive index becomes relatively significant.

• Korean Journal of Metals and Materials
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• v.48 no.5
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• pp.445-448
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• 2010

For an enhanced thermoelectric performance, one-dimensional heterostructure nanowires were created that consisted of aBi core and Te shell. The structure was fabricated by depositing Te in-situ onto a Bi nanowire grown by our unique OFF-ON (on-film formation of nanowires) method. After examining a cross-sectional TEM image, it was found that diffusive interface was formed between Bi and Te. Selected area electron diffraction revealed that the crystallinity of the Te shell was some what lower compared to the highly single-crystalline Bi core. The Bi-Te core/shell nanowires can be a smart structure that suppresses phonon transport by several scattering mechanisms, making the OFF-ON method the simplest way to realize that structure.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.157-157
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• 2003

수평 전기로에서 CdIn2Te4 다결정을 용융법으로 합성하고 Bridgman법으로 tetragonal structure의 c축에 평행한 CdIn2Te4 단결정을 성장시켰다. c축에 평행한 시료의 광흡수와 광전류 spectra를 293K에서 10K까지 측정하였다. 광흡수 spectra에 의해 band gap Eg(T)는 varshni공식에 따라 계산한 결과 1.4753eV-(7.78$\times$$10^{-3}$eV/K)T$^2$/(T+2155K)임을 확인하였다. Hall 효과는 van der Pauw 방법에 의해 측정되었으며, 온도에 의존하는 운반자 농도와 이동도는 293K에서 각각 9.01$\times$$10^{16}$ /㎤, 219 $\textrm{cm}^2$/V.S였다. 광전류 스펙트럼으로부터 Hamilton matrix(Hopfield quasicubic mode)법으로 계산한 결과 crystal field splitting $\Delta$cr값이 0.2704 eV이며 spin-orbit $\Delta$so 값은 0,1465 eV임을 확인하였다. 10K일 때 광전류 봉우리들은 n=1일때 Al-, Bl-와 Cl-exciton 봉우리임을 알았다.

• Electrical & Electronic Materials
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• v.9 no.8
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• pp.813-818
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• 1996

Amorphous As$_{10}$Ge$_{15}$ Te$_{75}$ device shows the memory switching characteristics under d.c. bias. In bulk material, a-As$_{10}$Ge$_{15}$ Te$_{75}$ switching threshold voltage (V$_{th}$) is very high (above 100 volts), but in the case of thin film, V$_{th}$ decreases to a few or ten a few volts. The characteristics of V$_{th}$ depends on the physical dimensions such as the thickness of thin film and the separation between d.c. electrodes, and the annealing conditions. The switching threshold voltage decreases exponentially with increasing annealing temperature and annealing time, but increases linearly with the thickness of thin film and exponentially with increasing the separation between d.c. electrodes. The desirable low switching threshold voltage, therefore, can be obtained by the stabilization through annealing and changing physical dimensions.imensions.sions.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.7 no.2
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• pp.167-177
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• 1996

The cutoff frequencies of a double ridged rectangular waveguide are calculated by applying the modal analysis to its cross-section. And the characteristic impedance of its $TE_{10}$ mode is evaluated in a frequency range of 6 to 18 GHz. When both ends of a linearly tapered rectangular wa- veguide consists of single and double ridged rectangular cross-sections, the equivalent nonuniform transmission line of its $TE_{10}$ mode is solved numerically. It is shown that the input impedance at its single ridged terminal becomes nearly constant in the wide bandwidth.