• The Transactions of the Korean Institute of Electrical Engineers P
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• v.52 no.2
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• pp.56-60
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• 2003

In this work, we have fabricated thin film resistors using the DC/RF magnetron sputter of 51wt%Ni-41wt%Cr-8wt%Si alloy target and studied the effect of the process parameters on the electrical properties. In fabrication process, sputtering power, substrate temperature and annealing temperature have been varied as controllable parameters. TCR decreases with increasing the substrate temperature, but TCR increases over 300 [$^{\circ}C$]. The films are annealed to 400 [$^{\circ}C$] in air atmosphere, TCR increases with increasing the annealing temperature. The resistivity was 172 [${\mu}{\Omega}{\cdot}cm$] and 209 [${\mu}{\Omega}{\cdot}cm$] for the RF and DC as a sputtering power sources, respectively. Also, TCR was -52 [$ppm/^{\circ}C$] and -25 [$ppm/^{\circ}C$]. As a results of them, it is suggested that the sheet resistance and TCR of thin films can be controlled by variation of sputter process parameter and annealing of thin film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.64-65
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• 2005

The structural and electrical properties of the films are investigated as a function of nitrogen/argon ratio at room temperature and at various deposition temperatures. The phase changes as $Ta_2N$ or TaN in the films were observed as nitrogen/argon ratio increases from 3% to 25%. The phase changes were associated with a change in the resistivity and TCR (temperature coefficient of resistance) of the films. TCR values of the films deposited at room temperature and different nitrogen contents were negative, and strongly decreased with the increase in nitrogen/argon ratio. The Ta2N films deposited at nitrogen/argon ratio of 3% show improved TCR values and thermal stability with increasing deposition temperature. The $Ta_2N$ films grown at nitrogen/argon ratio of 3% and the temperature of $200^{\circ}C$ showed a TCR value of -47 $ppm/^{\circ}C$, which is close to near-zero TCR in the range of deposition temperature.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.1
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• pp.27-31
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• 2008

Due to the increasing need for miniaturization of electronic device, embedded resistor technology using thick film resistance paste to embed resistors currently mounted on the board thus effectively reducing board size, is being extensively researched. In this research, thick film resistor paste having $0.35{\sim}4k{\Omega}/sq$ range of resistivity were fabricated using mixtures of carbon black and epoxy resin. In order to adjust the TCR (temperature coefficient resistivity), TCR modifiers such as Ni-Cr alloy, $SiO_2$ powder were added and were able to improve on TCR value with $100ppm/^{\circ}C$. Finally embedded resistor board using thick film resistance paste were fabricated. Stable resistivity value and reliability results were achieved.

• Proceedings of the KIPE Conference
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• 2015.07a
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• pp.1-4
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• 2015

• Journal of the Korean Magnetics Society
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• v.23 no.5
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• pp.149-153
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• 2013

The electronic structures of $TCr_2O_4$ (T = Fe, Co, Ni) spinel oxides have been investigated by employing synchrotron radiation-based soft X ray absorption spectroscopy (XAS). The measured 2p XAS spectra of transition-metal ions reveal that Cr ions are trivalent ($Cr^{3+}$), and all the T (T = Fe, Co, Ni) ions are divalent ($Fe^{2+}$, $Co^{2+}$, $Ni^{2+}$). It is also found that most of T (T = Fe, Co, Ni) ions occupy the A sites under the tetrahedral symmetry, while Cr ions occupy mainly the B sites under the octahedral symmetry. These findings show that the structures of $TCr_2O_4$ (T = Fe, Co, Ni) are very close to the normal spinel structures. Based on these findings, it is expected that Jahn-Teller (JT) effects are important in $FeCr_2O_4$ and $NiCr_2O_4$. In contrast, $CoCr_2O_4$ maintains the cubic structure without having the JT distortion since both $Cr^{3+}$ and $Co^{2+}$ ions are non-JT ions. This work suggests that the antiferromagnetic interaction between $Cr^{3+}$ and $T^{2+}$ ions plays an important role in determining the magnetic properties of $TCr_2O_4$ (T = Fe, Co, Ni).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.19-19
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• 2009

TiNxOy/TiNx multilayer thin films with a high resistance (~ k$Omega$) were deposited on SiO2/Si substrates at room temperature by sputtering. The TiNx thin films show island and smooth surface morphology in samples prepared by dc and rf magnetron sputtering, respectively. TiNxOy/TiNx multilayer has been developed to control temperature coefficient of resistance (TCR) by the incorporation of TiNx layer (positive TCR) inserted into TiNxOy layers(negative TCR). Electrical and structural properties of sputtered TiNxOy/TiNx multilayer films were investigated as a function of annealing temperature. In order to achieve a stable high resistivity, multilayer films were annealed at various temperatures in oxygen ambient. Samples annealed at 700 oC for 1 min exhibit a good TCR value and a stable high resistivity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.558-561
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• 2001

Vanadium oxide ($VO_x$) thin films are very good candidate material for uncooled infrared (IR) detectors due to their high temperature coefficient of resistance (TCR) at room temperature. But, the deposition of $VO_x$ thin films showing good electrical properties is very difficult in micro bolometer fabrication process using sacrificial layer removal because of its low process temperature and thickness of thin films less than $1000{\AA}$. This paper presents a new fabrication process of $VO_x$ thin films having high TCR and low resistance. Through sandwich structure of $VO_{x}(100{\AA})/V(80{\AA})/VO_{x}(500{\AA})$ by sputter method and post-annealing at oxygen ambient, we have achieved high TCR more than $-2%/^{\circ}C$ and low resistance less than $10K\Omega$ at room temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.558-561
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• 2001

Vanadium oxide ($VO_{x}$) thin films are very good candidate material for uncooked infrared (IR) detectors due to their high temperature coefficient of resistance (TCR) at room temperature. But, the deposition of $VO_{x}$ thin films showing good electrical properties is very difficult in micro bolometer fabrication process using sacrificial layer removal because of its low process temperature and thickness of thin films less than 1000${\AA}$. This paper presents a new fabrication process of $VO_{x}$ thin films having high TCR and low resistance. Through sandwich structure of $VO_{x}$(100${\AA}$)/V(80${\AA}$)/$VO_{x}$(500${\AA}$) by sputter method and post-annealing at oxygen ambient, we have achieved high TCR more than -2%/$^{\circ}C$ and low resistance less than $10K\Omega$ at room temperature.

• Proceedings of the KIPE Conference
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• 2014.07a
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• pp.51-52
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• 2014

전력계통은 전력수요의 지속적인 성장에 따라서 전력설비의 추가를 지속적으로 추진하고 있지만, 심해지는 환경문제 등으로 인해 용지 확보에 어려움이 있다. 이로 인해 송전선로 장거리화, 용량부족량 등 전력계통에 여러 가지 복잡한 문제가 야기되는데, 이것은 곧 전력계통의 안정도와 직결된다. 이러한 문제를 효과적이면서 경제적인 해결방법으로 FACT(Flexible AC Transmission System)기술이 주목 받고 있다. FACTS 기기 중 SVC(Static Var Compensator)는 상용운전 중이며, 기존 동기조상기에 비해 저렴하고, 신속 정확한 전압제어를 하는 장점이 있다. SVC는 TCR(Thyristor Controlled Reactor)과 TSC(Thyristor Switched Capacitor), FC(Fixed Capacitor)등 여러 종류의 구성을 가질 수 있다. TCR과 TSC는 실제 운전에 앞서 여러 가지 방법으로 검증이 필요하다. 합성 시험회로 설비(Synthetic Test Circuit)는 TCR과 TSC 안에 존재하는 Thyristor Valve의 동작을 실제 동작 조건으로 동작시켜, 동작의 신뢰성을 검증하는 설비이다. 본 논문에서는 TCR의 Operational Test를 위한 STC를 기술하고 있다. 설계된 STC는 PSCAD를 사용하여 검증하였다.

• Proceedings of the KIEE Conference
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• 1988.11a
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• pp.127-130
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• 1988

This paper describes digital simulation of harmonic elimination in the FC-TCR. (Fixed Capacitor and Thyristor Controlled Reactor) A model at harmonic frequency is developed for a STATIC VAR compansator. The model is shown to be useful in predicting resonance condition. A new variable filter is used for synthesized harmonic elimination.