• 반도체디스플레이기술학회지
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• 제4권2호
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• pp.39-43
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• 2005

In the study, in order to deposit TaN thin film for diffusion barrier and bottom electrode we made the Plasma Assisted ALD equipment and confirmed the electrical characteristics of TaN thin films grown PAALD method. Plasma Assisted ALD equipment depositing TaN thin film using PEMAT(pentakis(ethylmethlyamino) tantalum) precursor and NH3 reaction gas is shown that TaN thin film deposited high density and amorphous phase with XRD measurement. The degree of diffusion and reaction taking place in Cu/TaN (deposited using 150W PAALD)/$SiO_{2}$/Si systems with increasing annealing temperature was estimated for MOS capacitor property and the $SiO_{2}$, (600${\AA}$)/Si system surface analysis by C-V measurement and secondary ion material spectrometer (SIMS) after Cu/TaN/$SiO_{2}$ (400 ${\AA}$) layer etching. TaN thin film deposited PAALD method diffusion barrier have a good diffusion barrier property up to 500$^{\circ}C$.

• Tribology and Lubricants
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• 제38권6호
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• pp.274-280
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• 2022

There is a problem that semiconductor probe pin has a short lifespan. In order to solve this problem, Ti having excellent conductivity was doped to tetrahedral amorphous carbon (ta-C) having excellent hardness and abrasion resistance. This experiment was planned through the Taguchi robust design to determine the effect of the control factor of the ta-C:Ti coating film. The effect and contribution of control factors such as Unbalanced Magnetron Sputter(UBM) discharge current, arc discharge current, temperature, and bias voltage on ta-C:Ti characteristics were analyzed from the perspective of electrical and mechanical characteristics. The UBM discharge current was set to 4, 6, and 8 A. The main control factor of thickness and resistance is the UBM discharge current, and the thickness increased and the resistance decreased as the current increased. The decrease in resistance is due to the increase in the Ti content of the ta-C:Ti coating film. The arc discharge current was set to 60, 80, and 100 A. The main control factor of hardness and wear is the arc discharge current, and as the current rises, the hardness increases and the wear area decreases. This is due to the increased ta-C content of the ta-C:Ti coating film. Since resistance and wear are important for Probe Pin, the optimal level is set from the perspective of resistance and wear and a confirmation experiment is conducted.

• 한국자기학회지
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• 제9권4호
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• pp.210-216
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• 1999

본 연구에서는 e-beam evaporator를 사용하여 제조한 CoCrTa/CrNi 박막시편의 자성층 두께에 따른 부식특성과 열처리에 따른 부식특성의 변화를 알아보았다. Potentiodynamic scan을 이용하여 알아본 결과, 자성층 두께가 증가함에 따라 부식전위가 낮아지고, 부동태 전류밀도가 감소함을 알 수 있었다. XRD를 이용한 분석결과에 따르면, 이것은 자성층 두께가 증가함에 따라 (100)면보다 수소과전압이 큰 (0002)면으로 우선 성장했기 때문이다. 열처리에 따른 CoCrTa(400$\AA$) 자성박막의 부식특성 변화를 potentiodynamic scan과 accelerated corrosion chamber test를 이용하여 알아본 결과, 열처리후 박막시편의 내부식성이 우수해짐을 알 수 있었다. 이것은 열처리에 의해 자성층위에 Cr 산화물층이 형성되고, 이 산화물층이 자성층의 보호막으로 작용했기 때문이다.

• 한국식품위생안전성학회지
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• 제14권3호
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• pp.259-264
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• 1999

Xylooligosaccharide의 세균에 대한 돌연변이 유발성을 검색하기 위하여 Salmonella typhimurium의 히스티딘 요구성균주 TA100, TA1535, TA98 및 TA1537의 4개 균주와 대장균 Escherichia coli의 트립토판 요구성 균주인 WP2 uvrA를 이용해 복귀돌연변이 시험을 실시하였다. 시험 물질은 증류수에 용해하여 처리하였으며, 대사 활성계 미적용 및 적용하에 $5000\;\mu\textrm{g}/plate$를 최고농도로 하고 공비 2로서 5단계 농도군(313, 625, 1250, 2500 및 $5000\;\mu\textrm{g}/plate$)과 음성 및 양성 대조군으로 시험군을 구성해 본 시험을 실시하였다. 시험 결과 시험물질을 처리한 모든 농도군에서 복귀돌연변이 집락 수는 음성대조군과 비슷한 정도로 관찰되었다. 이상의 결과에서, xylooligosaccharide는 본 시험 조건 하에 사용한 균주들에 복귀돌연변이를 유발하지 않는 것으로 사료되었다.

• 한국세라믹학회지
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• 제35권5호
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• pp.472-478
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• 1998

Ferroelectric SrBi2Ta2O9(SBT) films were deposited on Pt/Ti/SiO2/Si substrates at 50$0^{\circ}C$ using a sintered SBT target Bi and Ta targets by modified rf magnetron sputtering and then were annealed at 80$0^{\circ}C$ for 10min in oxygen ambinet(760 torr) The composition of the SBT films could be easily controlled using the mul-ti-targets. The film composition of {{{{ {Sr }_{0.8 } {Bi }_{2.9 } {Ta}_{2.0 } {O }_{9 } }} was obtained with SBTd sputtering power of 100 W Bi of 25W and Ta of 10 W. A 250nm thick SBT films exhibited a dense and uniform microstructure and showed the remanent polarization(Pr) of 14.4 $\mu$C/cm2 and the coercive field({{{{ {E }_{c } }})of 60 kV/cm at applied voltage of 5 V. The SBT films show practically no polarization fatigue up to {{{{ {10 }_{10 } }} cycles under 5V bipolar pulse. The retention characteristics of the SBT films looked very promising and the leakage current density of the SBT films was about 1.23$\times${{{{ {10 }^{-7 } }}A/c{{{{ {m }^{2 } }} at 120kV/cm.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 일렉트렛트 및 응용기술
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• pp.41-46
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• 2002

In this work, we studied electrical characteristics and leakage current mechanism of Au/$Ta_2O_5$/Si metal-oxide-semiconductor (MOS) devices. $Ta_2O_5$ thin film (63nm) was deposited by atomic layer deposition (ALD) method at temperature of $235^{\circ}C$. The structures of the $Ta_2O_5$ thin films were examined by X-Ray Diffraction (XRD). From XRD, the structure of $Ta_2O_5$ was single phase and orthorhombic. From capacitance-voltage (C-V) analysis, the dielectric constant was 19.4. The temperature dependence of current-voltage (I-V) characteristics of $Ta_2O_5$ thin film was studied from 300 to 423 K. In ohmic region (<0.5 MVcm${-1}$), the resistivity was $2.4056{\times}10^{14}({\Omega}cm)$ at 348 K. The Schottky emission is dominant in lower temperature range from 300 to 323 K and Poole-Frenkel emission dominant in higher temperature range from 348 to 423 K.

• 한국재료학회지
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• 제16권6호
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• pp.373-376
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• 2006

[ $Ba(Mg_{1/3}Ta_{2/3})O_3$ ] nanoparticles were synthesized in water solution under mild temperature and pressure conditions by precipitation from $Ba(NO_3),\;Mg(NO_3)_2{\cdot}6H_2O\;and\;TaCl_5$ with aqueous potassium hydroxide. The average size and distribution of the synthesized $Ba(Mg_{1/3}Ta_{2/3})O_3$ nanoparticles were below 100 nm and broad, respectively. The phase of synthesized particles was crystalline reacted at $170^{\circ}C$ for 4 h. The characterization of $Ba(Mg_{1/3}Ta_{2/3})O_3$ nanoparticles were studied using XRD, SEM, and TEM.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.15-18
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• 2003

Ta-Ti metal alloy is proposed for alternate gate electrode of ULSI MOS device. Ta-Ti alloy was deposited directly on $SiO_2$ by a co-sputtering method and good interface property was obtained. The sputtering power of each metal target was 100W. Thermal and chemical stability of the electrode was studied by annealing at $500^{\circ}C$ and $600^{\circ}C$ in Ar ambient. X-ray diffraction was measured to study interface reaction and EDX(energy dispersive X-ray) measurement was performed to investigate composition of Ta and Ti element. Electrical properties were evaluated on MOS capacitor, which indicated that the work function of Ta-Ti metal alloy was ${\sim}4.1eV$ compatible with NMOS devices. The measured sheet resistance of alloy was lower than that of poly silicon.

• 한국재료학회지
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• 제8권4호
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• pp.304-311
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• 1998

0.07%C-0.014%Ti-0.015Nb-0.005%B강 (강종 B)을 각각 TMCP처리하여 그 기계적 특성과 B의 거동을 조사하였다. Ta-B강이 Ti-Nb-B강보다 인장강도는 더 우수하였으나 충격 흡수에너지는 훨씬 더 낮았다. Ta-B강의 강도가 Ti-Nb-B강보다 더 우수한 이유는 Ta-B강에서의 Ta의 석출강화 효과가 Ti-Nb-B강에서의 Ti와 Nb의 석출강화 효과보다 더 크기 때문으로 생각된다. Ta-B강은 입내파괴, Ti-Nb-B강은 임계파괴의 파괴양상을 보여이며, Ti-Nb-B강이 Ta-B 강보다 더 큰 충격 흡수에너지를 나타내었다. TMCP에서는 항온변태시의 평형석출과는 달리 연속냉각방법을 사용하였기 때문에 B가 결정립계에 평형적 또는 비평형적으로 편석되어 준안정상으로 생각되는 연속적인 필름 형태의 붕화물을 형성한다. 또한, 냉각속도의 차이에 따라 석출물은 결정질이 되거자 비정질이 되었다. B의 함량이 많은 Ti-Nb-B강에서는 석출물이 비정질상이었다. 한편, B함량이 적은 Ta-B강에서는 B강에서는 결정립계에서 B가 관찰되지 않아는데, 이것은 결정립계에서의 B의 석출이 B의 함량에 매우 민감함을 의미하는 것이다.

• Journal of Microbiology and Biotechnology
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• 제17권5호
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• pp.721-727
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• 2007

Stability-enhanced mutants, H44, 11-94, 5A2-84, and F8, of L-threonine aldolase(L-TA) from Streptomyces coelicolor A3(2)(SCO1085) were isolated by an error-prone PCR followed by a high-throughput screening. Each of these mutant, had a single amino acid substitution: H177Y in the H44 mutant, A169T in the 11-94 mutant, D104N in the 5A2-84 mutant and F18I in the F8 mutant. The residual L-TA activity of the wild-type L-TA after a heat treatment for 20 min at $60^{\circ}C$ was only 10.6%. However, those in the stability-enhanced mutants were 85.7% for the H44 mutant, 58.6% for the F8 mutant, 62.1% for the 5A2-84 mutant, and 67.6% for the 11-94 mutant. Although the half-life of the wild-type L-TA at $63^{\circ}C$ was 1.3 min, those of the mutant L-TAs were longer: 14.6 min for the H44 mutant, 3.7 min for the 11-94 mutant, 5.8 min for the 5A2-84 mutant, and 5.0 min for the F8 mutant. The specific activity did not change in most of the mutants, but it was decreased by 45% in the case of mutant F8. When the aldol condensation of glycine and 3,4-dihydroxybenzaldehyde was studied by using whole cells of Escherichia coli containing the wild-type L-TA gene, L-threo-3,4-dihydroxyphenylserine(L-threo-DOPS) was successfully synthesized with a yield of 2.0 mg/ml after 20 repeated batch reactions for 100 h. However, the L-threo-DOPS synthesizing activity of the enzyme decreased with increased cycles of the batch reactions. Compared with the wild-type L-TA, H44 L-TA kept its L-threo-DOPS synthesizing activity almost constant during the 20 repeated batch reactions for 100 h, yielding 4.0 mg/ml of L-threo-DOPS. This result showed that H44 L-TA is more effective than the wild-type L-TA for the mass production of L-threo-DOPS.