• Journal of the Semiconductor & Display Technology
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• v.4 no.2 s.11
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• pp.39-43
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• 2005

In the study, in order to deposit TaN thin film for diffusion barrier and bottom electrode we made the Plasma Assisted ALD equipment and confirmed the electrical characteristics of TaN thin films grown PAALD method. Plasma Assisted ALD equipment depositing TaN thin film using PEMAT(pentakis(ethylmethlyamino) tantalum) precursor and NH3 reaction gas is shown that TaN thin film deposited high density and amorphous phase with XRD measurement. The degree of diffusion and reaction taking place in Cu/TaN (deposited using 150W PAALD)/$SiO_{2}$/Si systems with increasing annealing temperature was estimated for MOS capacitor property and the $SiO_{2}$, (600${\AA}$)/Si system surface analysis by C-V measurement and secondary ion material spectrometer (SIMS) after Cu/TaN/$SiO_{2}$ (400 ${\AA}$) layer etching. TaN thin film deposited PAALD method diffusion barrier have a good diffusion barrier property up to 500$^{\circ}C$.

• Tribology and Lubricants
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• v.38 no.6
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• pp.274-280
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• 2022

There is a problem that semiconductor probe pin has a short lifespan. In order to solve this problem, Ti having excellent conductivity was doped to tetrahedral amorphous carbon (ta-C) having excellent hardness and abrasion resistance. This experiment was planned through the Taguchi robust design to determine the effect of the control factor of the ta-C:Ti coating film. The effect and contribution of control factors such as Unbalanced Magnetron Sputter(UBM) discharge current, arc discharge current, temperature, and bias voltage on ta-C:Ti characteristics were analyzed from the perspective of electrical and mechanical characteristics. The UBM discharge current was set to 4, 6, and 8 A. The main control factor of thickness and resistance is the UBM discharge current, and the thickness increased and the resistance decreased as the current increased. The decrease in resistance is due to the increase in the Ti content of the ta-C:Ti coating film. The arc discharge current was set to 60, 80, and 100 A. The main control factor of hardness and wear is the arc discharge current, and as the current rises, the hardness increases and the wear area decreases. This is due to the increased ta-C content of the ta-C:Ti coating film. Since resistance and wear are important for Probe Pin, the optimal level is set from the perspective of resistance and wear and a confirmation experiment is conducted.

• Journal of the Korean Magnetics Society
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• v.9 no.4
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• pp.210-216
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• 1999

The objective of this paper is to investigate corrosion behaviors of CoCrTa/CrNi thin film and post heat-treatment effect. An electron beam evaporator was used for films deposition. After evaporation, post heat-treatment was carried out under $5.0{\times}10^3$ Torr vacuum condition. Annealing temperature and time were 400 $^{\circ}C$ and 30 min, respectively. To understand the effect of annealing on corrosion behavior of CoCrTa/CrNi, potentiodynamic polarization technique and accelerated corrosion chamber test were undertaken. Corrosion potential is higher for the annealed samples (CoCrTa 400$\AA$/CrNi 1000$\AA$) than for as-deposited one. This is attributed to an enrichment of Cr in the surface layer of the thinfilm resulting in a more corrosion resistant material.

• Journal of Food Hygiene and Safety
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• v.14 no.3
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• pp.259-264
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• 1999

To evaluate the bacterial reverse mutation of xylooligosaccharide(XO)s the in vitro Ames test using Salmonella typhimurium (TA9S, TAIOO, TA1535, TA1537) and Escherichia coli (WP2 uvrA) was performed. XO was negative in Ames test with Salmonella typhimurium and Escherichia coli with and without rat liver microsomal enzyme (S-9 fraction). According to the results, XO does not cause bacterial reverse mutation.

• Journal of the Korean Ceramic Society
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• v.35 no.5
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• pp.472-478
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• 1998

Ferroelectric SrBi2Ta2O9(SBT) films were deposited on Pt/Ti/SiO2/Si substrates at 50$0^{\circ}C$ using a sintered SBT target Bi and Ta targets by modified rf magnetron sputtering and then were annealed at 80$0^{\circ}C$ for 10min in oxygen ambinet(760 torr) The composition of the SBT films could be easily controlled using the mul-ti-targets. The film composition of {{{{ {Sr }_{0.8 } {Bi }_{2.9 } {Ta}_{2.0 } {O }_{9 } }} was obtained with SBTd sputtering power of 100 W Bi of 25W and Ta of 10 W. A 250nm thick SBT films exhibited a dense and uniform microstructure and showed the remanent polarization(Pr) of 14.4 $\mu$C/cm2 and the coercive field({{{{ {E }_{c } }})of 60 kV/cm at applied voltage of 5 V. The SBT films show practically no polarization fatigue up to {{{{ {10 }_{10 } }} cycles under 5V bipolar pulse. The retention characteristics of the SBT films looked very promising and the leakage current density of the SBT films was about 1.23$\times${{{{ {10 }^{-7 } }}A/c{{{{ {m }^{2 } }} at 120kV/cm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.41-46
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• 2002

In this work, we studied electrical characteristics and leakage current mechanism of Au/$Ta_2O_5$/Si metal-oxide-semiconductor (MOS) devices. $Ta_2O_5$ thin film (63nm) was deposited by atomic layer deposition (ALD) method at temperature of $235^{\circ}C$. The structures of the $Ta_2O_5$ thin films were examined by X-Ray Diffraction (XRD). From XRD, the structure of $Ta_2O_5$ was single phase and orthorhombic. From capacitance-voltage (C-V) analysis, the dielectric constant was 19.4. The temperature dependence of current-voltage (I-V) characteristics of $Ta_2O_5$ thin film was studied from 300 to 423 K. In ohmic region (<0.5 MVcm${-1}$), the resistivity was $2.4056{\times}10^{14}({\Omega}cm)$ at 348 K. The Schottky emission is dominant in lower temperature range from 300 to 323 K and Poole-Frenkel emission dominant in higher temperature range from 348 to 423 K.

• Korean Journal of Materials Research
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• v.16 no.6
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• pp.373-376
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• 2006

[ $Ba(Mg_{1/3}Ta_{2/3})O_3$ ] nanoparticles were synthesized in water solution under mild temperature and pressure conditions by precipitation from $Ba(NO_3),\;Mg(NO_3)_2{\cdot}6H_2O\;and\;TaCl_5$ with aqueous potassium hydroxide. The average size and distribution of the synthesized $Ba(Mg_{1/3}Ta_{2/3})O_3$ nanoparticles were below 100 nm and broad, respectively. The phase of synthesized particles was crystalline reacted at $170^{\circ}C$ for 4 h. The characterization of $Ba(Mg_{1/3}Ta_{2/3})O_3$ nanoparticles were studied using XRD, SEM, and TEM.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.15-18
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• 2003

Ta-Ti metal alloy is proposed for alternate gate electrode of ULSI MOS device. Ta-Ti alloy was deposited directly on $SiO_2$ by a co-sputtering method and good interface property was obtained. The sputtering power of each metal target was 100W. Thermal and chemical stability of the electrode was studied by annealing at $500^{\circ}C$ and $600^{\circ}C$ in Ar ambient. X-ray diffraction was measured to study interface reaction and EDX(energy dispersive X-ray) measurement was performed to investigate composition of Ta and Ti element. Electrical properties were evaluated on MOS capacitor, which indicated that the work function of Ta-Ti metal alloy was ${\sim}4.1eV$ compatible with NMOS devices. The measured sheet resistance of alloy was lower than that of poly silicon.

• Korean Journal of Materials Research
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• v.8 no.4
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• pp.304-311
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• 1998

0.07%C-0.014%Ti-0.015Nb-0.005%B강 (강종 B)을 각각 TMCP처리하여 그 기계적 특성과 B의 거동을 조사하였다. Ta-B강이 Ti-Nb-B강보다 인장강도는 더 우수하였으나 충격 흡수에너지는 훨씬 더 낮았다. Ta-B강의 강도가 Ti-Nb-B강보다 더 우수한 이유는 Ta-B강에서의 Ta의 석출강화 효과가 Ti-Nb-B강에서의 Ti와 Nb의 석출강화 효과보다 더 크기 때문으로 생각된다. Ta-B강은 입내파괴, Ti-Nb-B강은 임계파괴의 파괴양상을 보여이며, Ti-Nb-B강이 Ta-B 강보다 더 큰 충격 흡수에너지를 나타내었다. TMCP에서는 항온변태시의 평형석출과는 달리 연속냉각방법을 사용하였기 때문에 B가 결정립계에 평형적 또는 비평형적으로 편석되어 준안정상으로 생각되는 연속적인 필름 형태의 붕화물을 형성한다. 또한, 냉각속도의 차이에 따라 석출물은 결정질이 되거자 비정질이 되었다. B의 함량이 많은 Ti-Nb-B강에서는 석출물이 비정질상이었다. 한편, B함량이 적은 Ta-B강에서는 B강에서는 결정립계에서 B가 관찰되지 않아는데, 이것은 결정립계에서의 B의 석출이 B의 함량에 매우 민감함을 의미하는 것이다.

• Journal of Microbiology and Biotechnology
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• v.17 no.5
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• pp.721-727
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• 2007

Stability-enhanced mutants, H44, 11-94, 5A2-84, and F8, of L-threonine aldolase(L-TA) from Streptomyces coelicolor A3(2)(SCO1085) were isolated by an error-prone PCR followed by a high-throughput screening. Each of these mutant, had a single amino acid substitution: H177Y in the H44 mutant, A169T in the 11-94 mutant, D104N in the 5A2-84 mutant and F18I in the F8 mutant. The residual L-TA activity of the wild-type L-TA after a heat treatment for 20 min at $60^{\circ}C$ was only 10.6%. However, those in the stability-enhanced mutants were 85.7% for the H44 mutant, 58.6% for the F8 mutant, 62.1% for the 5A2-84 mutant, and 67.6% for the 11-94 mutant. Although the half-life of the wild-type L-TA at $63^{\circ}C$ was 1.3 min, those of the mutant L-TAs were longer: 14.6 min for the H44 mutant, 3.7 min for the 11-94 mutant, 5.8 min for the 5A2-84 mutant, and 5.0 min for the F8 mutant. The specific activity did not change in most of the mutants, but it was decreased by 45% in the case of mutant F8. When the aldol condensation of glycine and 3,4-dihydroxybenzaldehyde was studied by using whole cells of Escherichia coli containing the wild-type L-TA gene, L-threo-3,4-dihydroxyphenylserine(L-threo-DOPS) was successfully synthesized with a yield of 2.0 mg/ml after 20 repeated batch reactions for 100 h. However, the L-threo-DOPS synthesizing activity of the enzyme decreased with increased cycles of the batch reactions. Compared with the wild-type L-TA, H44 L-TA kept its L-threo-DOPS synthesizing activity almost constant during the 20 repeated batch reactions for 100 h, yielding 4.0 mg/ml of L-threo-DOPS. This result showed that H44 L-TA is more effective than the wild-type L-TA for the mass production of L-threo-DOPS.