• Analytical Science and Technology
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• v.5 no.1
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• pp.115-120
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• 1992

The upper limit of solid solution of $Al_2O_3$ in $LiTaO_3$ was investigated using X-ray diffraction and Raman spectroscopy. By substituting cations in $LiTaO_3$ with $Al^{3+}$, the melting temperature was lowed and the ferroelectric properties can be improved. It is easier at lower temperature to fabricate the single crystal used for SAW filters and IR sensors. From the measured lattice constants and Raman band broadening, the solubility limit was X=0.25mol in $Li_{1-X}Al_{2X}Ta{1-X}O_3$, above which $Al_2O_3$ was obsered as a second phase. The Raman band of sintered $LiTaO_3$ was compared with that of the single crystal to see the effect of grain size on the band broadening.

• Analytical Science and Technology
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• v.5 no.1
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• pp.111-114
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• 1992

Ordering phenomena were observed for Zn and Ta cations of $Ba(Zn_{1/3}Ta_{2/3})O_3$ under particular heat treatments, followed by a considerable lattice distortion. This lattice distortion was measured by X-ray powder diffraction with a precision of higher than 1/10,000. From this investigation, a significant lattice distortion occurred within 30 min. of sintering at $1350^{\circ}C$, and it was increased with sintering time.

• Journal of Advanced Navigation Technology
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• v.7 no.2
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• pp.211-216
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• 2003

In this paper, characteristics of Ta-Ti alloy was studied as a gate electrode for NMOS devices to replace the widely used polysilicon. Ta-Ti alloy was deposited directly on $SiO_2$ by a co-sputtering method using two of Ta and Ti targets. The sputtering power of each metal target was 100W. To compare with Ta-Ti, Ta deposited with a 100W sputtering power was fabricated as well. In order to investigate the thermal/chemical stability of the Ta-Ti alloy gate, the alloy was annealed at $600^{\circ}C$ with rapid thermal annealer. No appreciable degradation of the device was observed. Also the results of electrical analysis showed that the work function of Ta-Ti metal alloy was about 4.1eV which was suitable for NMOS devices and sheet resistance of alloy was lower than that of polysilicon.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.4
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• pp.165-168
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• 2008

Ta-doped thin films were deposited on quartz and indium-tin oxide glass substrates using a co-sputtering method. The Ta-doped films formed a solid solution that induced structural changes from rutile to anatase phase. The anodic photocurrents of the Ta-doped $TiO_2$ electrodes were observed not only in UV but also in the visible light range. The photocurrent response in visible light on Ta-doped $TiO_2$ films are due to bandgap reduction.

• Journal of the Korean Society of Radiology
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• v.8 no.6
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• pp.287-292
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• 2014

In this study, the neutron capture cross section of $^{180}Ta$(natural existence ratio: 0.012 %) obtain by measuring has been compared with the evaluated data for the capture data. In generally, the neutron capture resonance is defined as Breit-Wigner formula. The formula consists of the resonance parameters such as neutron width, total width and neutron width. However in the case of $^{180}Ta$, these are very poor experimental neutron capture cross section data and resonance information in below 10 eV. Therefore, in the study, we analyzed the neutron resonance of $^{180}Ta$ with the measuring the prompt gamma-ray from the sample. And the resonance was compared with the evaluated data by Mughabghab, ENDF/B-VII, JEFF-3.1 and TENDL 2012. Neutron sources from photonuclear reaction with 46-MeV electron linear accelerator at Research Reactor Institute, Kyoto University used for cross section measurement of $^{180}Ta(n,{\gamma})^{181}Ta$ reaction. $BGO(Bi_4Ge_3O_{12})$ scintillation detectors used for measurement of the prompt gamma ray from the $^{180}Ta(n,{\gamma})^{181}Ta$ reaction. The BGO spectrometer was composed geometrically as total energy absorption detector.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.39 no.6
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• pp.1-1
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• 2002

In this paper, we focus on comparison and analysis of performance for existing Topology Aggregation algorithm. For these, we designed and implemented PNNI routing simulator which contain various TA schemes, and evaluate performance of TA schemes by this simulator. The PNNI 1.0 specification of the ATM Forum is recommended that hierarchical routing protocol and topology information is aggregated in the network constructed hierarchically Aggregating topology information is known as TA(Topology Aggregation) and TA is very important for scalability and security in network. Therefore, the performance of PNNI network would vary with TA schemes and routing algorithm. PNNI routing simulator can be applied to develope Routing algorithm and TA algorithm and can be develope these algorithms in short period.

• 한국지구과학회:학술대회논문집
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• 2010.04a
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• pp.124-127
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• 2010

본 연구에서는 통가 해역 라우분지의 열수 광상 가능성이 있는 해산들에 대하여 자력탐사가 수행되었다. 그 중 TA 09 해산에 대하여 심해견인 자력탐사가 실시되었으며 심해견인 자력탐사는 정밀한 탐사를 위하여 해저면에서 약 50 ~ 60 m 고도를 유지하며 자력계를 견인하였다. 탐사지역의 총 자력 성분은 Overhauser Proton Magnetomer (모델 SeaSPY 300(해상자력계)m, SeaSPY 6000(심해견인자력계))를 이용하여 측정되었다. 탐사 해산들 중 해상자력탐사와 심해자력탐사가 같이 수행된 TA 09 해산과 주요 열수 광상 유망 지역으로 분류되는 TA 12, 26 해산에 대해서만 측정된 지자기값을 이용하여 자기이상도를 구하였으며 자화역산법을 이용하여 자화이상도를 제작하고 분석하였다. TA 09 해산과 TA 26 해산에서의 해상 자기이상도는 쌍극자 이상형태의 단순이상을 보이며 TA 12 해산에서는 정상부에 고이상이 나타나고 그 주변으로는 저이상대가 분포하고 있다. TA 09 해산에서의 해상자력계에 의한 자기이상치와 심해견인자력계에 의한 자기이상치를 비교하여 보면 거의 10배 이상의 해상도 차이를 보여준다. 연구지역 탐사해산들의 해저지형과 비교하여 보면 열수분출대의 가능성이 높은 저자화이상대들은 주로 해산의 정상부 및 정상부 칼데라와 그 칼데라 주변부에 주로 위치하고 있는 모습을 나타내고 있다. 향후 타 탐사 해산들에 대한 자기이상에 대한 정밀처리/분석 후 탄성파 탐사결과, 암석샘플의 결과 및 지화학결과 등과 비교하여 열수광상의 존재 여부 및 위치 추정 분석이 필요할 것으로 판단된다.

• Journal of the Korean Vacuum Society
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• v.13 no.1
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• pp.22-28
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• 2004

Ta films were deposited on Si (100) substrates at zero substrate bias voltage and a substrate bias voltage of -125 V ($V_{s}$ = -125 V) using a non-mass separated ion beam deposition system. To investigate the effect of the negative substrate bias voltage on the impurity concentration in the Ta films, secondary ion mass spectrometry (SIMS) was used to determine impurities in the Ta films. By the SIMS depth profiles with $Cs^{+}$ cluster ion beam, high intensities of O, C and Si were clearly found in the Ta film at $V_{s}$ = 0 V, whereas these impurities remarkably decreased in the Ta film at $V_{s}$ = -125 V. Furthermore, from the SIMS result with $Cs^{+}$ and $O_2^{+}$ ion beams, it was found that applying the negative substrate bias voltage could affect individual impurity contents in the Ta films during the deposition. Discussions concerning the effect of the negative substrate bias voltage on the impurity concentration of Ta films will be described in details.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.1
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• pp.31-37
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• 1999

In this study, the thermal property and adhesion of the electroless-deposited Cu thin film were investigated. The multilayered structure of Cu /TaN /Si was fabricated by electroless-depositing the Cu thin layer on the TaN diffusion barrier which was deposited by MOCVD on the Si substrate. The thermal stability was investigated by measuring the resistivity as post-annealing temperature for the multilayered Cu /TaN /Si specimen which was annealed at atmospheres of $H_2$and Ar gases, respectively. The adhesion strength of Cu films was evaluated by the scratch test. The adhesion of the electroless-deposited Cu film was compared with other deposition methods of thermal evaporation and sputtering. The scratch test showed that the adhesion of electroless plated Cu film on TaN was better than that of sputtered Cu film and evaporated Cu film.

• Korean Journal of Materials Research
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• v.11 no.6
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• pp.492-497
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• 2001

We report the characteristics and the dependence of sputter-deposited Ta films on the process parameters. The properties of as-deposited Ta films such as deposition rate, resistivity, Rs uniformity, reflectivity, and stress were investigated and analyzed as a function of process parameter using a statistical experimental method. The functional relationships between the independent and dependent variables were predicted by surface response. The optimal deposition condition of DC magnetron sputtered Ta films was obtained at the chamber pressure of 2 mTorr, power density of 8 W/$\textrm{cm}^2$, and substrate temperature of 2$0^{\circ}C$ by means of resistivity and Rs uniformity. The fitness value for quadratic model as evaluated by the R- square was 0.85~ 0.9 without pooling. The as-deposited Ta films exhibited the resistivity of ~180$\mu$$\Omega$cm with Rs uniformity of ~2%. The transmission electron microscopy and x-ray diffractometry identified that the phase of as-deposited film was $\beta$-Ta having the grain size of 100~200.