• Journal of IKEEE
• /
• v.20 no.3
• /
• pp.295-298
• /
• 2016

In this paper, we analysed the properties of the conventional ESD protection devices such as SCR, MVSCR, LVTSCR. The electrical characteristics and the turn-on time properties are simulated by Synopsys T-CAD simulator. As the results, the devices have the holding voltages between 2V and 3V, and the trigger voltage of about 20V with SCR, of about 12V with MVSCR, of about 9V with LVTSCR. The results of the simulation for the turn-on time properties are 2.8ns of SCR, 2.2ns of MVSCR, 2.0ns of LVTSCR. Thus, we prove that LVTSCR has the shortest turn-on time. However, the second breakdown currents(It2) of the devices are 7.7A of SCR, 5.5A of MVSCR, 4A of LVTSCR. This different properties have to be adapted by the operation voltages for I/O Clamps.

• Journal of the Korean Ceramic Society
• /
• v.34 no.12
• /
• pp.1227-1234
• /
• 1997

ZnO thin films were prepared by rf-magnetron sputter at various conditions. Crystallinity, microstructure, chemical composition, and optical composition, and optical properties of the films were investigated as functions of substrate temperature (R. T.-50$0^{\circ}C$) an sputter gas (O2/Ar=0-50%). ZnO thin films grown at 50$0^{\circ}C$ with sputter gas of pure argon as well as at R. T. with sputter gas of a mixture of argon & oxygen(O2/Ar=2%) exhibit a strong tendency of (002) preferred orientation, compared with a considerable random orientation at the other conditions. The thin films with (002) preferred orientation has a chemical stoichiometry of Zn/O-1.01, a band gap of 3.3eV, and a packing density of 98% respectively.

• Journal of the Mineralogical Society of Korea
• /
• v.15 no.1
• /
• pp.78-84
• /
• 2002

New pyrochlore-type phases($A_2$$B_2$$O_{7}$) were synthesized in the systems: CaO-C$eO_2$-T$iO_2$, CaO-$UO_2$(T$hO_2$)-Z$rO_2$, CaO-$UO_2$(T$hO_2$)-$Gd_2$$O_3$-T$iO_2$-Z$rO_2$, 및 CaO-T$hO_2$-S$nO_2$. The starting materials were pressed with the pressure of 200~400 MPa and sintered at 1500~ 155$0^{\circ}C$ for 4~8 hours in air and at 1300~ 135$0^{\circ}C$ for 5 ~50 hours under oxygen atmosphere. The products were characterized using XRD, SEM/EDS and TEM. In the bulk compositions of CaCe$Ti_2$$O_{7}$, CaTh$Zr_2$$O_{7}$,($Ca_{0.5}$ Gd$Th_{0.5}$)(ZrTi)$O_{7}$) ($Ca_{0.5}$Gd$Th_{0.5}$)(ZrTi)$O_{7}$, ($Ca_{0.5}$G$dU_{0.5}$)(ZrTi)$O_{7}$ and CaTh$Sn_2$$O_{7}$ , pyrochlore was the major phase, together with other oxide phase $of_2$$O_{7}$ fluorite structure. In the samples with target compositions CaU$Zr_2$$O_2$및 $Ca_{0.5}$ G$dU_{0.5}$)$Zr_2$T$iO_{7}$ pyrochlore was not identified, but a fluorite-structured phase was detected. The formation factor as the stable phase depended on crystal chemical characteristics of the actinide and lanthanide elements of the system concerned.

• Journal of the Korean Chemical Society
• /
• v.14 no.4
• /
• pp.321-326
• /
• 1970

The relation between the heating temperature and the V.C.P(Vacuum Condensing Point) at different degree of vacuum through the sublimatographic separation was studied where by ; (1) Anthracene and Anthraquinone, ${\alpha}$-Naphtol and ${\beta}$-Naphthol, o-Aminobenzoicacid and p-Aminobeenzoicacid were easily separated from each of its mixtures as shown in Figure9, 10 and 11, while tailings appeared appreciably. The results were in good agreement with those expected from the $t_k$-V.C.P curves in Figures 3,4,5,6,7 and 8. (2) The relation between the degree of vacuum and the V.C.P. of ${\alpha}$-Naphthol and Anthracene at different heating temperatures appeared as follows and are shown in Figures 12 and 13.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.191-191
• /
• 2009

$Bi_4Ti_3O_{12}$ (BiT) thin films were well developed on the Pt/Ti/$SiO_2/Si$ substrate by a metal organic decomposition (MOD) method. Oxygen was effective on the crystallization of the BiT thin films during a rapid thermal annealing process. The electrical properties of the BiT films dependant on the oxygen partial pressure were investigated. No crystalline phase was observed for the BiT film annealed at $700^{\circ}C$ under oxygen free atmosphere. However, its crystallinity was significantly evolutionned with increasing oxygen partial pressure. In addition, its dielectric and piezoelectric properties were enhanced with increasing oxygen partial pressure to 10 torr. Especially, the BiT film, annealed at $700^{\circ}C$ and 10 torr oxygen pressure, showed good dielectric properties: dielectric constant of 51 and dielectric loss of 0.2 % at 100 kHz. Its leakage current and piezoelectric constant ($d_{33}$) was also considerably improved, being as 0.62 nA/$cm^2$ at 1 V and approximately 51 pm/V, respectively.

• New Physics: Sae Mulli
• /
• v.68 no.12
• /
• pp.1302-1307
• /
• 2018

The crystallographic, electrical and magnetic behaviors of magnetite powder in the vicinity of its Verwey transition were investigated in this study. Magnetite was prepared by synthesizing a nanoparticle precursor and then annealing it at $800^{\circ}C$ for 1 h under a dynamic vacuum. Crystallographic and morphology analyses were done by using scanning electron microscope (SEM) and X-ray diffraction (XRD). The electrical and the magnetic properties were examined by using $M{\ddot{o}}ssbauer$ spectroscopy, vibrating sample magnetometer (VSM) and resistivity measurement. Both the magnetic moment and the resistivity showed discontinuous changes at the Verwey transition temperature ($T_V$). The temperature dependence of magnetic anisotropy constant showed a monotonic decrease with increasing temperature, with slight dip near $T_V$. $M{\ddot{o}}ssbauer$ spectra showed the superposition of two sextets, one from the tetrahedral (A) and the other from the octahedral (B) sites. The results revealed that identical charge states existed in the B site at temperatures both above and below $T_V$. A coordination crossover resulted in a transition from an inverse to a normal spinel at or close to $T_V$.

• Bulletin of the Korean Chemical Society
• /
• v.34 no.1
• /
• pp.225-230
• /
• 2013

A new heteropolyanion-based ionic ($[Hmim]_5PMo_{10}V_2O_{40}$) was synthesized by the reaction of molybdovanadophosphoric acid ($H_5PMo_{10}O_{40}$) with N-methylimidazole. [$[Hmim]_5PMo_{10}V_2O_{40}$ showed a high catalytic activity in the oxidative desulfurization of sulfur-containing compounds in 1-methylimidazolium tetrafluoroborate ($[Hmim]BF_4$) ionic liquid using 30% aqueous $H_2O_2$ as the oxidant. The catalytic system was of high activity, simplified workup and flexible recyclability. The catalytic oxidation reactivity of sulfur-containing compounds decreased in the order dibenzothiophene (DBT) > 4,6-dimethyldibenzothiophene (4,6-DMDBT) > benzothiophene (BT). The influences of various parameters including reaction time (t) and temperature (T), catalyst dosage, and oxidant to sulfur molar ratio n(O)/n(S) on the desulfurization of model oil were investigated in details. 99.1% of DBT conversion in the model oil was achieved at atmospheric pressure under the optimal conditions: n(O)/n(S) = 4:1, $60^{\circ}C$, 100 min and molar ratio of catalyst to sulfur of 0.062. The ionic liquid can be recycled six times without significant decrease in activity.

• Analytical Science and Technology
• /
• v.7 no.2
• /
• pp.233-236
• /
• 1994

To evaluate the emulsion stability indices of W/O emulsion system, we developed the simple and sensitive "VOLUMETRIC METHOD". This technique involved the first step of homogenizing the milk fat-water system with Ultra-turrax T25, then the volume of the added water phase was measured immediately. After quiescent incubation in test tubes at room temperature for a desired storage time, the bottom volume of the separated water layer was measured. And then "emulsion stability index(ESI)" was calculated by the following equation : $ESI=(1-V_s/V_a){\times}100$, where $V_a$ means the volume of the added water in the W/O emulsion and $V_s$ represents the volume of the separated water in the W/O emulsion for a desired storage time. The emulsion stability indices of W/O emulsion system at sorbitan trioleate, span 60, and tween 20 were $95.4{\pm}1.8$, $56.1{\pm}2.8$, and $41.6{\pm}2.2$ respectively. Furthermore, the differences between "VOLUMETRIC METHOD" and "Titus et al method" were less than 5.0 of ESI Value.

• The Transactions of the Korea Information Processing Society
• /
• v.7 no.8
• /
• pp.2463-2472
• /
• 2000

In this paper, we consider pits and falls of V oIP service scheme over the air link environment. It results that V oIP over packet switching is a more attractive approach in several points. We point out the ffilIior requirements for successful V oIP service over the air. Also, we propose V oIP CP concept for efficient wireless channel utilization. Additionally, we analyze and evaluate the performance. According to the results, It shows that the long cycle VolP vocoder CODEC such as ITU-T G.723 is better than short cycle V oIP vocoder CODEC. In this case, the increase of the simultaneous user of system is almost 60% larger than conventional circuit switching.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.15 no.5
• /
• pp.526-532
• /
• 2015

We quantitatively investigated instability mechanisms under simultaneous positive gate and drain bias stress (SPGDBS) in self-aligned top-gate amorphous indium-zinc-oxide thin-film transistors. After SPGDBS ($V_{GS}=13V$and $V_{DS}=13V$), the parallel shift of the transfer curve into a negative $V_{GS}$ direction and the increase of on current were observed. In order to quantitatively analyze mechanisms of the SPGDBS-induced negative shift of threshold voltage (${\Delta}V_T$), we experimentally extracted the density-of-state, and then analyzed by comparing and combining measurement data and TCAD simulation. As results, 19% and 81% of ${\Delta}V_T$ were taken to the donor-state creation and the hole trapping, respectively. This donor-state seems to be doubly ionized oxygen vacancy ($V{_O}^{2+}$). In addition, it was also confirmed that the wider channel width corresponds with more negative ${\Delta}V_T$. It means that both the donor-state creation and hole trapping can be enhanced due to the increase in self-heating as the width becomes wider. Lastly, all analyzed results were verified by reproducing transfer curves through TCAD simulation.