• Korean Journal of Heritage: History & Science
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• v.44 no.3
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• pp.44-61
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• 2011

This study consider the life and works of Hu ShunShen(胡舜申) who was the author of JiRiSinBub(地理新法) which the representative FengShui book in Choson dynasty. His adult name is RuJia(汝嘉). He was born in on September 6, 1091 at JiXi(績溪) in China as a son of Ho Xian(胡咸). He left his hometown with his family to avoid war and settled down in HuZhou(胡州). He took up an official post with his brother's YinPu(蔭補), and held several provincial official posts. After serving as vice governor(通判) of ShuZhou(舒州), he became supervisor of taoist temple(崇道觀) in TaiZhou(台州) and retired from office. After burying his father, he took an interest in fengShui(風水) and studied for a long time. People say that JiangXiDilixinfa(江西地理新法) is the well-known FengShui book written by him. When he was 74 years old, he suggested opening SheMen(蛇門) gate and XuMen(胥門) gate in SuZhou(蘇州) castle by "WoMenZhongGao(吳門忠告)". But it didn't come ture. He died March 9, 1177 at the age of 87 and was buried in HuZhou(胡州). His elder brother Hu Shunzhi(胡舜陟) and nephew HuZi(胡仔) is well-known. He had a son named Hu wei(胡偉) who served pacification commissioners of JiangXi(江西宣撫使). His Works were YiSiSiZhouLu(乙巳泗州錄), YiYouBiLuanLu(己酉避亂錄) as essay and YinYangBeiYong(陰陽備用), JiRiSinBub(地理新法), "WoMenZhongGao(吳門忠告)" as fengShui text.

• Journal of Environmental Impact Assessment
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• v.30 no.4
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• pp.225-236
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• 2021

The master plan for the Four Rivers Restoration Project (June 2009) was devised, the procedure of pre-environmental review (June 2009) and environmental impact assessment (Nov. 2009), and post-environmental impact survey were implemented, and 4 times audits also inspected. and finally the Ministry of Environment's Four Rivers Investigation and Evaluation Planning Committee proposed the dismantling or partial dismantling of the five weirs of the Geum River and Yeongsan River. But controversies and conflicts are still ongoing. Therefore, this study intend to reestablish the management plan for the four major rivers by reviewing and analyzing the process so far. The results are as follows. First, a cost-benefit analysis should be performed by comparing the water quality impact of weir operation and weir opening. Therefore, it is inevitably difficult to conduct cost-benefit analysis. Second, according to the results of cost-benefit analysis on the dismantling of the Geum River and the Yeongsan River, the dismantling of the weir and the regular sluice gate opening was decided. However, there is a problem in the validity of the decision to dismantle the weir because the cost-benefit analysis for maintaining the weir is not carried out. Third, looking at the change in water quality of 16 weirs before and after the Four Major Rivers Restoration Project, COD and Chl-a were generally deteriorated, and BOD, SS, T-N, and T-P improved. However, in the cost-benefit analysis related to water quality at the time of weir dismantling, only COD items were targeted. Therefore, the cost of BOD, SS, T-N, and T-P items improved after the project were not reflected in the cost-benefit analysis of dismantling weirs, so the water quality benefits were exaggerated. Fourth, in the case of Gongju weir and Juksan weir, most of them are movable weirs, so opening the weir alone can have the same effect as dismantling when the water quality deteriorates. Since the same effect can be expected, there is little need to dismantle the weirs. Fifth, in order to respond to frequent droughts and floods, it is desirable to secure the agricultural water supply capacity to the drought areas upstream of the four majorrivers by constructing a waterway connected to the weir. At present it is necessary to keep weirs rather than dismantling them.

• Journal of Yeungnam Medical Science
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• v.11 no.1
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• pp.101-108
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• 1994

Many previously described nuclear medicine procedures to assess glomerular filtration rate have some problems because numerous blood sample is to be taken and they don't measure each separate renal function. Gates described isotopic method for the measurement of global and unilateral GFR based on the fractional renal uptake of $^{99m}Tc$-DTPA 2 to 3 minutes after its intravenous injection. We evaluated GFR using $^{99m}Tc$-DTPA in 57 people according to Gates method and compared with creatinine clearance. A good correlation was observed between creatinine clearance and GFR calculated by Gates' formula with an r value of 0.9(P<0.05). And also the relationship between parameters of $^{99m}Tc$-DTPA renal scan images and GFR was taken. They were significantly correlated with GFR calculated by Gates' formula : r value 0.66 between relative intensity of peak renal to peak aortic activity(pK/pA) and GFR, -0.42 between time between aortic and kidney peak(A-K) and GFR and -0.48 between parenchymal renal activity at 25 min compared to peak kidney activity(25K/pK) and GFR. In conclusion, the determination of GFR according to the Gates' formula shows good and reproducible of GFR with rapidity and simplicity. And the parameters from the renal scan images can use to estimate the renal function.

• Animal cells and systems
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• v.6 no.3
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• pp.271-275
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• 2002

Rph1 and Gisl are damage-responsive repressors involved in PHR1 expression. They have two $C_{2}$H/ sub 2/ zinc finger motifs as putative DNA binding domains and N-terminal conserved domain with unknown function. They are also found in the human retinoblastoma binding protein 2 and the mouse jumonji- encoded protein. The repressors are able to bind to A $G_{4}$ sequence within a 39-bp sequence called upstream repressing sequence of PHR1 promoter (UR $S_{PHR1}$) responsible for the damage-response of PHR1. We report here that Rph1 is predominantly localized in the nucleus as examined by fluorescence microscopic analysis with GFP-Rph1 fusion protein. On the basis of the fact that the A $G_{4}$ sequence that is recognized by Rph1 and Gisl is also recognized by Msn2 and Msn4 in a process of stress response, we a1so tried to examine the in vivo function of A $G_{4}$ and the role of Msn2 and Msn4 in PHR1 expression. Our results demonstrate that Msn2 and Msn4 are actually required for the basal transcription of PHR1 expression but not for its damage induction. When A $G_{4}$ sequence was inserted into the minimal promoter of the cyc1-LacZ reporter, the increased LacZ expression was observed indicating its involvement in transcriptional activation. The data suggest that the A $G_{4}$ is primarily required for basal transcriptional activation of PHR1 or CYC1 promoter through the possible involvement of Msn2 and Msn4. However, since the A $G_{4}$ is also involved in the repression of PHR1 via Rphl and Gisl, it is proposed that A $G_{4}$ functions as either URS or upstream activating sequence (UAS) depending on the promoter context.t.

• ETRI Journal
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• v.26 no.6
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• pp.575-582
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• 2004

Fully-depleted silicon-on-insulator (FD-SOI) devices with a 15 nm SOI layer thickness and 60 nm gate lengths for analog applications have been investigated. The Si selective epitaxial growth (SEG) process was well optimized. Both the single- raised (SR) and double-raised (DR) source/drain (S/D) processes have been studied to reduce parasitic series resistance and improve device performance. For the DR S/D process, the saturation currents of both NMOS and PMOS are improved by 8 and 18%, respectively, compared with the SR S/D process. The self-heating effect is evaluated for both body contact and body floating SOI devices. The body contact transistor shows a reduced self-heating ratio, compared with the body floating transistor. The static noise margin of an SOI device with a $1.1\;{\mu}m^2$ 6T-SRAM cell is 190 mV, and the ring oscillator speed is improved by 25 % compared with bulk devices. The DR S/D process shows a higher open loop voltage gain than the SR S/D process. A 15 nm ultra-thin body (UTB) SOI device with a DR S/D process shows the same level of noise characteristics at both the body contact and body floating transistors. Also, we observed that noise characteristics of a 15 nm UTB SOI device are comparable to those of bulk Si devices.

• Journal of the Korean Vacuum Society
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• v.18 no.2
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• pp.79-84
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• 2009

The electron emission source of triode type has been fabricated using CNT paste. The nano Ag particle and photosensitive polymers were added to the CNT paste. The surface roughness of the CNT emitter was uniform by the back exposure method. The added nano Ag particle improves the adhesion and the electric conductance with small variation in the CNTs and between electrode. After the aging with heat-exhausting, the reliability of the triode CNT electron source was secured in the high voltage and current operation for 12 hours. At this time, the gate leakage current was about 10 % less than.

• Journal of Information Display
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• v.2 no.3
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• pp.48-53
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• 2001

Carbon nanotube emitters, prepared by screen printing, have demonstrated a great potential towards low-cost, largearea field emission displays. Carbon nanotube paste, essential to the screen printing technology, was formulated to exhibit low threshold electric fields as well as an emission uniformity over a large area. Two different types of triode structures, normal gate and undergate, have been investigated, leading us to the optimal structure designing. These carbon nanotube FEDs demonstrated color separation and high brightness over 300 $cd/m^2$ at a video-speed operation of moving images. Our recent developments are discussed in details.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.28 no.11A
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• pp.859-866
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• 2003

In this paper, we designed the bandwidth allocation scheme with priority consideration for upstream channel access of EthernetPON. The objective of our scheme is to control the multi services in more effective way according to their CoS(Class of Service) or QoS(Quality of Service). The designed scheme considers transmission priority in the both side of OLT and ONU. In the OLT's view, the Two-step scheduling algorithm is applied with which we can support multiple bandwidth allocation policies simultaneously, i.e. SBA for the time-sensitive, constant rate transmission services and DBA for the best-effort services. This Two-step scheduling algorithm reduces the scheduling complexity by separating the process of transmission start time decision from the process of grant generation. In the ONU's view, the proposed scheme controls 8 priority queues of the 802.1d recommended 8 service classes. Higher priority queue is serviced in prior during the allowed GATE time from OLT. The OPNET modeling and simulation result compares the performance of each bandwidth allocation policy with SBA or DBA only approach.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.599-602
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• 2005

In this paper, we have performed a study that modifies the CPW Pad configurations to improve an $f_{max}$ characteristic of metamorphic HEMT. To analyze the CPW Pad structures of MHEMT, we use the ADS momentum simulator developed by $Agilent^{TM}$. Comparing the employed structure (G/W = 40/100 m), the optimized structure (G/W = 20/25 m) of CPW MHEMT shows the increased $S_{21}$ by 2.5 dB, which is one of the dominant parameters influencing the $f_{max}$ of MHEMT. To compare the performances of optimized MHEMT with the employed MHEMT, DC and RF characteristics of the fabricated MHEMT were measured. In the case of optimized CPW MHEMT, the measured saturated drain current density and transconductance $(g_m)$ were 693 mA/mm and 647 mS/mm, respectively. RF measurements were performed in a frequency range of $0.1{\sim}110$ GHz. A high $S_{21}$ gain of 5.5 dB is shown at a millimeter-wave frequency of 110 GHz. Two kinds of RF gains, $h_{21}$ and maximum available gain (MAG), versus the frequency, and a cut-off frequency ($f_t$) of ${\sim}154$ GHz and a maximum frequency of oscillation ($f_{max}$) of ${\sim}358$ GHz are obtained, respectively, from the extrapolation of the RF gains for a device biased at a peak transconductance. An optimized CPW MHEMT structure is one of the first reports among fabricated 0.1 m gate length MHEMTs.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.210-215
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• 2017

We have developed the neuromorphic system that can work with the four-terminal Si-based synaptic devices and verified the operation of the system using simulation tool and printed-circuit-board (PCB). The symmetrical current mirrors connected to the n-channel and p-channel synaptic devices constitute the synaptic integration part to express the excitation and the inhibition mechanism of neurons, respectively. The number and the weight of the synaptic devices affect the amount of the current reproduced from the current mirror. The double-stage inverters controlling delay time and the NMOS with large threshold voltage ($V_T$) constitute the action-potential generation part. The generated action-potential is transmitted to next neuron and simultaneously returned to the back gate of the synaptic device for changing its weight based on spike-timing-dependent-plasticity (STDP).