• Journal of The Korean Digital Architecture Interior Association
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• v.3 no.1
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• pp.59-62
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• 2003

The death from suffocation due to the gas from various disaster is frequent very and it occurs. Specially only from the company which treats the gas and only the enterprise which maintains the gas the many greeting accident occurs. Also accidents could occur when working around the toxic gas without one's noticing Therefore a development of the portable gas ditectoror is very essential. Specially with development of design and the new product of the electric chemical sensor might help reducing the many accidents. From the side which protects a worker's life, it isn't just simple equipment but also it must be connected directly to life saving is very important. Therefore, the key technical contents of development must be focused on sensor which is simple and easy to carry and able to detect varieties of toxic gas. So, this study is about the product design which is simple and easy to carry and to use.

• Journal of the Semiconductor & Display Technology
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• v.5 no.4 s.17
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• pp.35-40
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• 2006

This paper shows that the effect of exposing on the top area and a solution which using a water circulation system. Semiconductor substrate stage is made from Aluminum and is repeated the sequence of exposing (150), turning OFF shutter, taking 30 sec. interval at the top area of stage. So the temperature of substrate temperature rises continuously. On this, we made a waterway at the inner part of the substrate stage and operated a water circulation system. We measured the temperature of a substrate stage surface with a thermocouple attached to the substrate stage. To analyze the top area's temperature, we used Analysis Program ANSYS for analysis and 3D CAD program Solid-Works for modeling.

• Korean Journal of Crystallography
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• v.10 no.2
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• pp.119-124
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• 1999

X-선 회절법을 이용하여 3,6-bis(6'-methyl-2'pyridyl)pyridazine을 리간드로 한 Zn(Ⅱ) 착물인 [3,6-bis(6'-methyl-2'pyridyl)pyridazine]ZnCl2 (C16H16N4·ZnCl2)의 결정구조를 규명하였다. 이 결정의 결정계는 Monoclinic이며 공간군은 P21/a이다. 단위포 상수는 a=15.053(7) Å, b=14.594(7) Å, c=7.628(3) Å이며, β=93.92(4)°, V=1671.9(13) Å3, T=293(2)K, Z=4, Dc=1.594 Mgm-3이다. 회절반점들의 세기는 Enraf-Nonius CAD-4 diffractometer로 얻었으며 Mo Kα선(λ=0.71073 Å)을 사용하였다. 분자구조는 직접법으로 풀었으며, Fo>4σ (Fo)인 1750개의 독립 회절 데이터에 대하여 최소승자법으로 정밀화하여 최종 신뢰도 값 R=8.31%을 얻었다.

• Korean Journal of Crystallography
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• v.10 no.2
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• pp.125-129
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• 1999

X-선 회절법을 이용하여 1-(3 Carbamoyl-3,3-diphenylpropyl)-1-methylhexahydro-1H-azepinium iodide[이하: DIP]의 분자 및 결정구조를 규명하였다. 이 결정의 분자식은 C23H31N2O·I, 결정계는 Monoclinic이며 공간군은 P21이다. 단위포 상수는 a =8.937(1) Å, b=19.522(2) Å, c=6.485(2) Å이며, β= 105.18(2)°, V=1091.9(6) Å3, T=293(2)K, Z=2, Dc=1.45 Mgm-3이다. 회절반점들의 세기는 Enarf-Nonius CAD-4 diffractometer로 얻었으며 Mo Katjs(λ=0.71073 Å)을 사용하였다. 분자구조는 직접법으로 개략적인 분자모델을 설정하고, Fo>4σ(Fo)인 4112개의 독립 회절 데이터에 대하여 최소자승법으로 정밀화하여 최종 신뢰도 값 R=5.23%인 최종적인 분자모형을 구하였다.

• Animal cells and systems
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• v.7 no.3
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• pp.261-264
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• 2003

Leiden), no mutation was detected in either group. Allele frequencies of A2379G and G2391 A mutations were not significantly different between CAD patients and controls. Non-Caucasian populations have a considerably lower factor Ⅴ Leiden allele frequency than Caucasian populations. Thus, it may be due to differences in the genetic background as well as environmental factors.

• Transactions of Materials Processing
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• v.20 no.4
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• pp.279-283
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• 2011

Recently incremental sheet metal forming (ISF) has used widely in making prototypes and small-volume products in automotive industry etc. We apply the ISF to make a 1/4 sized automobile body-in-white. First, ISF tests for rectangular shaped cup have been performed to clarify the formability denoting the relationship between the component wall angle and maximum cup height of safe forming. Next, a CAD model for the automobile was designed and segmented into several components in order to accommodate the working space of the CNC machine we adopted and the formability of the sheet metal. Then, a CAM software was employed to generate the tool path for manufacturing wooden dies and all the small parts. Finally, the different parts were joined into a single component by laser welding after the ISF process. By using the ISF we successfully produced the 1/4 sized automobile body-in-white.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.9
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• pp.713-717
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• 2011

This paper was carried out design of 600 V GaN power MOSFET Modeling. We decided trench gate type one for design. we carried out device and process simulation with T-CAD tools. and then, we have extracted optimal device and process parameters for fabrication. we have analysis electrical characteristics after simulations. As results, we obtained 600 V breankdown voltage and $0.4\;m{\Omega}cm^2ultra$ low on resistance. At the same time, we carried out field ring simulation for obtaining high voltage.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.9
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• pp.523-526
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• 2016

This paper was researched about 1,200 V level floating island IGBT (insulated gate bipolar transistor). Presently, 1,200 V level IGBT is used in Inverter for distributed power generation. We analyzed and compared electrical charateristics of the proposed floating island IGBT and conventional IGBT. For analyzing and comparison, we used T-CAD tool and simulated the electrical charateristics of the devices. And we extracted optimal design and process parameter of the devices. As a result of experiments, we obtained 1,456 V and 1,459 V of breakdown voltages, respectively. And we obatined 4.06 V and 4.09 V of threshold voltages, respectively. On the other hand, on-state voltage drop of floating island IGBT was 3.75 V. but on-state vlotage drop of the conventional IGBT was 4.65 V. Therefore, we almost knew that the proposed floating island IGBT was superior than the conventional IGBT in terms of power dissipation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.10
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• pp.794-798
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• 2011

This paper was carried out design of 1,700 V Base Resistance Thyristor for fabrication. We decided conventional BRT (base resistance thyristor) device and Trench Gate type one for design. we carried out device and process simulation with T-CAD tools. and then, we have extracted optimal device and process parameters for fabrication. we have analysis electrical characteristics after simulations. As results, we obtained 2,000 V breakdown voltage and 3.0 V Vce,sat. At the same time, we carried out field ring simulation for obtaining high voltage.

• 한국초전도학회:학술대회논문집
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• v.15
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• pp.53-53
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• 2005