• IMMUNE NETWORK
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• 제14권1호
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• pp.21-29
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• 2014

Follicular helper T ($T_{FH}$) cells are recently highlighted as their crucial role for humoral immunity to infection as well as their abnormal control to induce autoimmune disease. During an infection, na$\ddot{i}$ve T cells are differentiating into $T_{FH}$ cells which mediate memory B cells and long-lived plasma cells in germinal center (GC). $T_{FH}$ cells are characterized by their expression of master regulator, Bcl-6, and chemokine receptor, CXCR5, which are essential for the migration of T cells into the B cell follicle. Within the follicle, crosstalk occurs between B cells and $T_{FH}$ cells, leading to class switch recombination and affinity maturation. Various signaling molecules, including cytokines, surface molecules, and transcription factors are involved in $T_{FH}$ cell differentiation. IL-6 and IL-21 cytokine-mediated STAT signaling pathways, including STAT1 and STAT3, are crucial for inducing Bcl-6 expression and $T_{FH}$ cell differentiation. $T_{FH}$ cells express important surface molecules such as ICOS, PD-1, IL-21, BTLA, SAP and CD40L for mediating the interaction between T and B cells. Recently, two types of microRNA (miRNA) were found to be involved in the regulation of $T_{FH}$ cells. The miR-17-92 cluster induces Bcl-6 and $T_{FH}$ cell differentiation, whereas miR-10a negatively regulates Bcl-6 expression in T cells. In addition, follicular regulatory T ($T_{FR}$) cells are studied as thymus-derived $CXCR5^+PD-1^+Foxp3^+\;T_{reg}$ cells that play a significant role in limiting the GC response. Regulation of $T_{FH}$ cell differentiation and the GC reaction via miRNA and $T_{FR}$ cells could be important regulatory mechanisms for maintaining immune tolerance and preventing autoimmune diseases such as systemic lupus erythematosus (SLE) and rheumatoid arthritis (RA). Here, we review recent studies on the various factors that affect $T_{FH}$ cell differentiation, and the role of $T_{FH}$ cells in autoimmune diseases.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.863-866
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• 2003

Recently, there has been growing interests in the magneto-resistive random access memory (MRAM) because of its great potential as a future nonvolatile memory. In this paper, a CMOS macro-model for MRAM cell based on a twin cell structure is proposed. The READ and WRITE operations of the MTJ cell can be emulated by adopting data latch and switch blocks. The behavior of the circuit is confirmed by HSPICE simulations in a 0.35-${\mu}{\textrm}{m}$ CMOS process. We expect the macro model can be utilized to develope the core architecture and the peripheral circuitry. It can also be used for the characterization and the direction of the real MTJ cells.

• 전기학회논문지
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• 제57권9호
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• pp.1660-1668
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• 2008

The WiBro was adopted to the 3G international standard. By the change of specification from Wave 1 to Wave 2, MIMO technology is applied in order to increase the speed of downlink. By MIMO the RF part of WiBro base station is increased to 2 Tx paths. Therefore, the size of RF part is bigger and material cost is increased. For reducing these demerits, the RF part which is consisted of PA, LNA, and TDD switch is designed to one complex RF unit. Also, the experimental results of the RF unit have been discussed. Since the complex RF unit is more compact than the RF part of Wave 1 base station, it can be used as the RF part of Wave 2 base station with 2T/2R MIMO.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 D
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• pp.3210-3212
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• 2000

We designed and manufactured 300MHz NMR RF Transceiver. NMR system is composed of NMR Spectrometer, Superconductive Magnet and Pulse Programmer, GUI. NMR RF Transceiver is composed of transmitter, receiver, frequency synthesizer. T/R switch, main power amp., RF coil. To phase modulation, transmitter is composed of mixer, splitter and combiner et al. To weak signal detection, receiver is composed of pre-amp., filter, mixer et al. Each module is manufactured PCB. And installed NMR system to detect chemical component of specimen. In result, we can get the information of specimen.

• 대한전자공학회논문지TC
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• 제46권12호
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• pp.6-13
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• 2009

X-대역의 위상 배열 시스템에 응용 가능한 전력 증폭기, 6-bit 위상 변위기, 6-bit 디지털 감쇠기 및 SPDT 송수신 스위치를 각각 설계 및 측정하였다. 모든 회로는 CMOS 0.18 um 공정을 사용하여 구현되었다. 전력 증폭기는 2-단 차동 및 cascode 구조를 가지며, 20 dBm 의 P1dB, 19%의 PAE 의 성능을 8-11 GHz 주파수 대역에서 보였다. 6-bit 위상 변위기는 Embedded switched filter 구조를 가지며, 스위치용 nMOS 트랜지스터 및 마이크로스트립 선로로 인덕턴스를 구현하였다. $360^{\circ}$ 위상 제어가 가능하며 위상 해상도는 $5.6^{\circ}$ 이다. 8-11 GHz 주파수 대역에서 RMS phase 및 amplitude 오차는 $5^{\circ}$ 및 0.8 dB 이하이며, 삽입손실은 약 $-15.7\;{\pm}\;1,1\;dB$ 이다. 6-bit 디지털 감쇠기는 저항 네트워크와 스위치가 결합된 Embedded switched Pi-및 T-구조이며, 위상 배열 시스템에서 요구하는 낮은 통과 위상 변동 특성을 가지는 구조가 적용되었다. 최대 감쇠는 31.5 dB 이며 진폭 해상도는 0.5 dB 이다. 8-11 GHz 주파수 대역에서 RMS amplitude 및 phase 오차는 0.4 dB 및 $2^{\circ}$ 이하이며, 삽입손실은 약 $-10.5\;{\pm}\;0.8\;dB$ 이다. SPDT 송수신 스위치는 series 및 shunt nMOS 트랜지스터의 쌍으로 구성되었으며 회로의 면적을 최소화하기 위해 1개의 수동 인덕터만으로 SPDT 기능을 구현하였다. 삽입손실은 약 -1.5 dB, 반사손실은 -15 dB 이하이며, 송수신 격리 특성은 -30 dB 이하이다. 각각의 칩 면적은 $1.28\;mm^2$, $1.9mm^2$, $0.34\;mm^2$, $0.02mm^2$ 이다.

• Asian-Australasian Journal of Animal Sciences
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• 제18권6호
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• pp.780-786
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• 2005

This study presents a non-video, non-invasive, automatic, on-site monitoring system the system employs ultrasonic transducers to detect behavior in sows before, during and after parturition. An ultrasonic transmitting/receiving (T/R) circuit of 40 kHz was mounted above a conventional parturition bed. The T/R units use ultrasonic time-of-flight (TOF) ranging technology to measure the height of the confined sows at eight predetermined locations. From this data, three momentary postures of the sow are determined, characterized as standing-posture (SP), lateral-lying-posture (LLP) and sitting posture (STP). By examining the frequencies of position switch Stand-Up-Sequence (SUS) between standing-posture (SP), lateral-lying-posture (LLP) and sitting-posture (STP) rate can be determined for the duration of the sow' confinement. Three experimental pureblooded Landrace sows undergoing normal gestation were monitored for the duration of confinement. In agreement with common observation, the sows exhibited increased restlessness as parturition approached. Analysis of the data collected in our study showed a distinct peak in Stand-Up-Sequence (SUS, i.e. the transition from lying laterally to standing up ) and sitting-posture (STP) rate approximately 12 h prior to parturition, the observed peak being 5 to 10 times higher than observed on any other measurement day. It is concluded that the presented methodology is a robust, low-cost, lowlabor method for the continuous remote monitoring of sows and similar large animals for parturition and other behavior. It is suggested that the system could be applied to automatic prediction of sow parturition, with automatic notification of remote management personnel so human attendance at birth could reduce rates of sow and piglet mortality. The results of this study provide a good basis for enhancing automation and reducing costs in large-scale sow husbandry and have applications in the testing of various large mammals for the effects of medications, diets, genetic modifications and environmental factors.

• 한국전자파학회논문지
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• 제27권1호
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• pp.60-68
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• 2016

본 논문에서는 6~18 GHz 대역 7-bit 28 dB 가변 신호 감쇠기의 설계 및 측정결과에 대하여 기술하였다. 기존의 switched-T 감쇠기에 칩 사이즈를 최소화하기 위해 인덕터를 사용하지 않았고, 보상용 병렬 커패시터를 추가하여 참조 상태 (reference state)와 감쇠 상태간의 위상 변화를 최소화하였다. 설계된 감쇠기는 $0.18{\mu}m$ CMOS 공정을 이용하여 제작하였다. 측정된 감쇠기의 해상도와 전체 감쇠 범위는 각각 0.22 dB 및 28 dB이다. 6~18 GHz의 동작 주파수에서 RMS 감쇠 오차는 0.26 dB 이하, 위상 오차는 $3.2^{\circ}$ 이하로 측정되었으며, 참조상태 손실은 12.4 dB 이하이다. 전체 주파수 범위와 감쇠상태에서 입출력 반사손실은 9.4 dB 이상이다. 패드를 포함하지 않은 칩 면적은 $0.11mm^2$이다.

• ETRI Journal
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• 제29권4호
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• pp.421-429
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• 2007

This paper presents a direct-conversion CMOS transceiver for fully digital DS-UWB systems. The transceiver includes all of the radio building blocks, such as a T/R switch, a low noise amplifier, an I/Q demodulator, a low pass filter, a variable gain amplifier as a receiver, the same receiver blocks as a transmitter including a phase-locked loop (PLL), and a voltage controlled oscillator (VCO). A single-ended-to-differential converter is implemented in the down-conversion mixer and a differential-to-single-ended converter is implemented in the driver amplifier stage. The chip is fabricated on a 9.0 $mm^2$ die using standard 0.18 ${\mu}m$ CMOS technology and a 64-pin MicroLead Frame package. Experimental results show the total current consumption is 143 mA including the PLL and VCO. The chip has a 3.5 dB receiver gain flatness at the 660 MHz bandwidth. These results indicate that the architecture and circuits are adaptable to the implementation of a wideband, low-power, and high-speed wireless personal area network.

• 한국ITS학회 논문지
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• 제7권2호
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• pp.43-49
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• 2008

본 논문에서는 UHF 대역 RFID에서 송신과 수신신호의 격리도를 개선한 새로운 구조의 방향성 결합기 모듈을 설계 제작하였다. 본 논문에서 제안한 방법은 방향성 결합기자체가 갖는 격리도와 안테나의 부정합으로 인한 TX의 반사를 모두 제거할 수 있는 구조이다. 제안한 방법을 검증하기 위하여 분포소자 및 집중소자로 방향성 결합기를 설계 및 제작하였다. 또한 바렉터 다이오드를 통한 가변회로를 설계하여 안테나의 부정합을 보상할 수 있도록 설계하였다. 제작한 회로의 특성은 모두 910MHz 중심주파수에서 45dB이상의 격리 특성을 보였다.

• 한국전기전자재료학회논문지
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• 제33권2호
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• pp.109-113
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• 2020

A power device is a component used as a switch or rectifier in power electronics to control high voltages. Consequently, power devices are used to improve the efficiency of electric-vehicle (EV) chargers, new energy generators, welders, and switched-mode power supplies (SMPS). Power device designs, which require high voltage, high efficiency, and high reliability, are typically based on MOSFET (metal-oxide-semiconductor field-effect transistor) and IGBT (insulated-gate bipolar transistor) structures. As a unipolar device, a MOSFET has the advantage of relatively fast switching and low tail current at turn-off compared to IGBT-based devices, which are built on bipolar structures. A superjunction structure adds a p-base region to allow a higher yield voltage due to lower R_DS (on) and field dispersion than previous p-base components, significantly reducing the total gate charge. To verify the basic characteristics of the superjunction, we worked with a planar type MOSFET and Synopsys' process simulation T-CAD tool. A basic structure of the superjunction MOSFET was produced and its changing electrical characteristics, tested under a number of environmental variables, were analyzed.