• Title/Summary/Keyword: T/R switch

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Design of T/R Switch Using LTCC Technology

  • Sim, Sung-Hun;Kang, Chong-Yun;Park, Ji-Won;Yoon, Young-Joong;Kim, hyun-Jai;Park, Hyung-Wook;Yoon, Seok-Jin
    • Journal of the Korean Ceramic Society
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    • v.40 no.4
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    • pp.375-379
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    • 2003
  • In this paper, a novel design of multilayer ceramic-based Transmit/Receive (T/R) switch using Low Temperature Co-fired Ceramic (LTCC) technology have been presented. Compact T/R switch has been designed by transforming quarter-wave transmission line to its lumped equivalent circuit. Especially, high-Q three dimensional inductors with double strip have been proposed and incorporated. The proposed inductor has been modeled by multi-conductor coupled lines. A measured inductor quality factor (Q) of 80 and a Self-Resonance Frequency (SRF) of 6.6 GHz have been demonstrated. The inductor library has been incorporated into the design of WCDMA T/R switch.

A 0.13-μm CMOS RF Tx/Rx Switch for Wideband Applications

  • Kim, Jeong-Yeon;Kim, Chang-Wan
    • Journal of electromagnetic engineering and science
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    • v.8 no.3
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    • pp.96-99
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    • 2008
  • This paper describes a $0.13-{\mu}m$ CMOS RF switch for $3{\sim}5$ GHz UWB band(mode 1). It can improve isolation characteristics between ports by using deep n-well RF devices while their source and body terminals are separated. From the measurement results, the proposed T/R switch is comparative to the on-wafer probing measurement results of the series-shunt T/R switches. When the proposed T/R switch operates as Tx mode, measured insertion loss from Tx to output port is less than 1.5 dB and isolation between Tx and Rx is more than 27 dB for $3{\sim}5$ GHz. Return loss for the Tx port is more than -10 dB and input P1dB is +10 dBm.

Design of an Active Inductor-Based T/R Switch in 0.13 μm CMOS Technology for 2.4 GHz RF Transceivers

  • Bhuiyan, Mohammad Arif Sobhan;Reaz, Mamun Bin Ibne;Badal, Md. Torikul Islam;Mukit, Md. Abdul;Kamal, Noorfazila
    • Transactions on Electrical and Electronic Materials
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    • v.17 no.5
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    • pp.261-269
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    • 2016
  • A high-performance transmit/receive (T/R) switch is essential for every radio-frequency (RF) device. This paper proposes a T/R switch that is designed in the CEDEC 0.13 μm complementary metal-oxide-semiconductor (CMOS) technology for 2.4 GHz ISM-band RF applications. The switch exhibits a 1 dB insertion loss, a 28.6 dB isolation, and a 35.8 dBm power-handling capacity in the transmit mode; meanwhile, for the 1.8 V/0 V control voltages, a 1.1 dB insertion loss and a 19.4 dB isolation were exhibited with an extremely-low power dissipation of 377.14 μW in the receive mode. Besides, the variations of the insertion loss and the isolation of the switch for a temperature change from - 25℃ to 125℃ are 0.019 dB and 0.095 dB, respectively. To obtain a lucrative performance, an active inductor-based resonant circuit, body floating, a transistor W/L optimization, and an isolated CMOS structure were adopted for the switch design. Further, due to the avoidance of bulky inductors and capacitors, a very small chip size of 0.0207 mm2 that is the lowest-ever reported chip area for this frequency band was achieved.

A 0.13 ${\mu}m$ CMOS UWB RF Transmitter with an On-Chip T/R Switch

  • Kim, Chang-Wan;Duong, Quoc-Hoang;Lee, Seung-Sik;Lee, Sang-Gug
    • ETRI Journal
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    • v.30 no.4
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    • pp.526-534
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    • 2008
  • This paper presents a fully integrated 0.13 ${\mu}m$ CMOS MB-OFDM UWB transmitter chain (mode 1). The proposed transmitter consists of a low-pass filter, a variable gain amplifier, a voltage-to-current converter, an I/Q up-mixer, a differential-to-single-ended converter, a driver amplifier, and a transmit/receive (T/R) switch. The proposed T/R switch shows an insertion loss of less than 1.5 dB and a Tx/Rx port isolation of more than 27 dB over a 3 GHz to 5 GHz frequency range. All RF/analog circuits have been designed to achieve high linearity and wide bandwidth. The proposed transmitter is implemented using IBM 0.13 ${\mu}m$ CMOS technology. The fabricated transmitter shows a -3 dB bandwidth of 550 MHz at each sub-band center frequency with gain flatness less than 1.5 dB. It also shows a power gain of 0.5 dB, a maximum output power level of 0 dBm, and output IP3 of +9.3 dBm. It consumes a total of 54 mA from a 1.5 V supply.

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Korean Red Ginseng slows coreceptor switch in HIV-1 infected patients

  • Young-Keol Cho;Jung-Eun Kim;Jinny Lee
    • Journal of Ginseng Research
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    • v.47 no.1
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    • pp.117-122
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    • 2023
  • Background: Human immunodeficiency virus-1 (HIV-1) that binds to the coreceptor CCR5 (R5 viruses) can evolve into viruses that bind to the coreceptor CXCR4 (X4 viruses), with high viral replication rates governing this coreceptor switch. Korean Red Ginseng (KRG) treatment of HIV-1 infected patients has been found to slow the depletion of CD4+ T cells. This study assessed whether the KRG-associated slow depletion of CD4+ T cells was associated with coreceptor switching. Methods: This study included 146 HIV-1-infected patients naïve to antiretroviral therapy (ART) and seven patients receiving ART. A total of 540 blood samples were obtained from these patients over 122 ± 129 months. Their env genes were amplified by nested PCR or RT-PCR and subjected to direct sequencing. Tropism was determined with a 10% false positive rate (FPR) cutoff. Results: Of the 146 patients naïve to ART, 102 were KRG-naïve, and 44 had been treated with KRG. Evaluation of initial samples showed that coreceptor switch had occurred in 19 patients, later occurring in 38 additional patients. There was a significant correlation between the amount of KRG and FPR. Based on initial samples, the R5 maintenance period was extended 2.35-fold, with the coreceptor switch being delayed 2.42-fold in KRG-treated compared with KRG-naïve patients. The coreceptor switch occurred in 85% of a homogeneous cohort. The proportion of patients who maintained R5 for ≥10 years was significantly higher in long-term slow progressors than in typical progressors. Conclusion: KRG therapy extends R5 maintenance period by increasing FPR, thereby slowing the coreceptor switch.

Design of the Dual Receiving Channel T/R Module for the Next Generation SAR Payload (차세대 SAR 탑재체를 위한 이중 수신 채널 T/R 모듈 설계)

  • Won, Young-Jin;Youn, Young-Su;Woo, Sung-Hyun;Yoon, Jae-Cheol;Keum, Jung-Hoon;Kim, Jin-Hee
    • Aerospace Engineering and Technology
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    • v.11 no.2
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    • pp.1-11
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    • 2012
  • This paper describes the transmit/receive(T/R) module for the space based X-band active phased array radar. T/R module is the integrated module which is assembled by the transmitting and receiving RF semiconductor devices to enable the electronically beam steering of the phased array antenna and the key component of the SAR payload. T/R module can selectively receive the polarization signals by the switch according to the established technology but now the technological trend of the T/R module is to receive the horizontal and vertical polarization signal simultaneously. Therefore the research and development of the dual polarization receiving channel T/R module is actively in progress. In this study, as the prior research for the next generation SAR payload, the technological trend of the active phased array radar T/R module and the result of the preliminary design of the dual receiving channel T/R module were described.

A Self-Driven Active Clamp Forward Converter Using the Auxiliary Winding of the Power Transformer (변압기 보조권선을 이용한 자기 구동 능동 클램프 포워드 컨버터)

  • 이광운;임범선;김희준
    • Journal of the Institute of Electronics Engineers of Korea SC
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    • v.40 no.5
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    • pp.350-354
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    • 2003
  • This study proposes a new self-driven active clamp forward converter eliminating the extra drive circuit for the active clamp switch. The converter used the auxiliary winding of the power transformer to drive the active clamp switch and a simple R-C circuit to get the dead time between the two switches. The operation principle was presented and experimental results were used to verify theoretical predictions. A 100-W (5V/20A) prototype converter built that only exhibited 1.5-turn winding number in the auxiliary winding was sufficient to drive the active clamp switch on the input of 50V. Finally, the measured efficiency of the converter was presented and the maximum efficiency of 91% was obtained.

A Study on ZVT Boost Converter Using a ZCS Auxiliary Circuit (ZCS 보조회로를 이용한 ZVT Boost 컨버터에 관한 연구)

  • Ryu D.K.;Lee W.S.;Choi T.Y.;Seo M.S.;Won C,Y.;Kim Y.R.
    • Proceedings of the KIPE Conference
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    • 2001.12a
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    • pp.129-132
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    • 2001
  • Recently, a ZVT boost converter is embedded in a power factor correction system. The control circuit of the converter assures soft-switching for all the MOSFETs and load regulation. The PFC system contains additional control circuits which assure the input voltage in a sinusoidal form and feed-forward line voltage regulation. In this paper, a soft switching boost converter with zero-voltage transition(ZVT) main switch using zero-current switching(ZCS) auxiliary switch is proposed. Operating intervals of the converter are persented and analyzed. The proposed results show that the main switch maintains UT while auxiliary switch retains ZCS for the complete specified line and load conditions.

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A Low Insertion-Loss, High-Isolation Switch Based on Single Pole Double Throw for 2.4GHz BLE Applications

  • Truong, Thi Kim Nga;Lee, Dong-Soo;Lee, Kang-Yoon
    • IEIE Transactions on Smart Processing and Computing
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    • v.5 no.3
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    • pp.164-168
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    • 2016
  • A low insertion-loss, high-isolation switch based on single pole double throw (SPDT) for a 2.4GHz Bluetooth low-energy transceiver is presented in this paper. In order to increase isolation, the body floating technique is implemented. Based on characteristics whereby the ratio of the sizes of the shunt and the series transistors significantly affect the performance of the switches, the device sizes are optimized. A simple matching network is also designed to enhance the insertion loss. Thus, the SPDT switch has high isolation and low insertion loss without increasing the complexity of the circuit. The proposed SPDT is designed and simulated in a complementary metal-oxide semiconductor 65nm process. The switch has a $530{\mu}m{\times}270{\mu}m$ area and achieves 0.9dB, 1.78dB insertion loss and 40dB, 41dB isolation of transmission, reception modes, respectively.