• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.7 s.349
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• pp.1-6
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• 2006

We show for the first time the optical properties of the selectively oxidized vertical cavity laser (VCL) - depleted optical thyristor (DOT), which has not only a low threshold current, but also a high sensitivity to the optical input light. In order to analyze their switching characteristics, nonlinear s-shaped current-voltage characteristics are calculated and the reverse full-depletion voltages (Vneg's) are obtained as function of semiconductor parameters by using a finite difference method (FDM). The selectively oxidized PnpN VCL-DOT clearly shows the nonlinear s-shaped current-voltage and lasing characteristics. A switching voltage of 5.24 V, a holding voltage of 1.50 V, a spectral response at 854.5 nm, and a very low threshold current of 0.65 mA is measured, making these devices attractive for optical processing applications.

• Proceedings of the KIPE Conference
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• 2017.11a
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• pp.133-134
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• 2017

This paper analyzes switch Device losses and efficiency depending on SiC and Si devices. The switch devices loss is compared to Si and SiC-based elements through Threshold Voltage and Miller Platequ Voltage. And analyzed through comparison of each switching loss by experiment.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.12 no.7
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• pp.3401-3420
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• 2018

Pixel expansion and contrast are two major performance parameters for visual cryptography scheme (VCS), which is a type of secret image sharing. Random Grid (RG) is an alternative approach to solve the pixel expansion problem. Chen and Tsao proposed the first (k, n) RG-based VCS, and then Guo et al., Wu et al., Shyu, and Yan et al. significantly improved the contrast in recent years. However, the investigations on improving the contrast of threshold RG-based VCS are not sufficient. In this paper, we develop a contrast-improved algorithm for (k, n) RG-based VCS. Theoretical analysis and experimental results demonstrate that the proposed algorithm outperformers the previous threshold algorithms with better visual quality and a higher accuracy of contrast.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.52 no.1
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• pp.42-47
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• 2016

This study was conducted to investigate visual threshold of nigro (Cichlasoma nigrofasciatum) on white LED light. The visual threshold was obtained by analyzing electrocardiogram (ECG) of the nigro. 5 individuals (body weight: 15.62~45.49 g; TL: 8.9~12.4 cm) were trained for lights by an electric stimulus. And then the heart rate (beats/10s) before and after switching on the light were compared. Light intensity range was from 0.00 to 226.4 lux. Average heart rate was 10.36 beats/10s in the normal condition. When the fish perceived the light, the heart rate was decreased. Visual threshold of the fish was 2.59 lux.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.78.2-78.2
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• 2012

최근 PRAM의 집적도 향상 및 3차원 적층에 의한 메모리 용량 향상을 위해 셀 선택 스위치로서 박막형 Ovonic Threshold Switching (OTS) 소자를 적용한 Cross bar 구조의 PRAM이 제안된 바 있다. OTS 소자는 비정질 칼코지나이드를 핵심층으로 하는 2단자 소자로서 고저항의 Off 상태에 특정 값 (문턱스위칭 전압) 이상의 전압을 가해주면 저저항의 On 상태로 바뀌고 다시 특정 값 (유지전압) 이하로 전압을 감소시킴에 따라 고저항의 Off 상태로 복원하는 특성을 갖는다. 셀 선택용 스위치로 적용되기 위해서는 핵심적으로 On-Off 상태간의 가역적인 변화 중에도 재료가 비정질 구조를 안정하게 유지해야 하며 전기적으로는 Off 상탱의 저항이 크고 또한 전류값의 점멸비가 커야 한다. GeSe는 이원계 재료로서 단수한 구성에도 불구하고 OTS 소자가 갖추어야할 기본적인 특성을 가지는 것으로 알려져 있다. 본 연구에서는 GeSe로 구성된 OTS 재료에 경원소인 질소를 첨가하여 비정질 상태의 안정성과 소자특성의 개선 효과를 조사하였다. RF-puttering 시 Ar과 $N_2$의 혼합 Gas를 사용하여 조성이 $Ge_{62}Se_{38}$ ($N_2$ : 3%)인 박막을 제작하여 DSC를 통해 결정화온도(Tx)를 확인하였고, $N_2$ gas의 함유량이 각각 1 %, 2 %, 3 %인 $Ge_{62}Se_{38}$인 박막을 전극의 접촉 부 면적이 $10{\times}10\;{\mu}m^2$인 cross-bar 구조의 소자로 제작하여 Threshold switching voltage ($V_{th}$), Delay time ($t_d$), $I_{on}/I_{off}$ 그리고 Endurance 특성을 평가하였다. DSC 분석 결과 $N_2$ 가 3 % 첨가된 GeSe 박막은 Tx가 $371^{\circ}C$에서 $399^{\circ}C$로 증가되었다. $N_2$가 1% 첨가된 GeSe 소자를 측정한 결과 $V_{th}$의 변화 없는 가운데 $I_{on}/I_{off}$이 약 $2{\times}10^3$에서 $5{\times}10^4$로 향상되었다. Endurance 특성 역시 $10^4$에서 $10^5$번으로 향상되었다. $t_d$의 경우 비정질 상태의 저항 증가로 인해 약 50% 증가되었다. 이러한 $N_2$의 첨가로 인한 비정질 GeSe 박막의 변화 원인에 대한 분석 결과를 소개할 예정이다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.234-237
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• 1996

The amorphous chalogenide semiconductors are new material in semiconductor physics. Their properties, especially electronic and optical properties are main motives for device application. Amorphous As$_{10}$Ge$_{15}$ Te$_{75}$material has the stable ac conductivity at high frequency and the dc memory switching property. At higher frequency than 10MHz, ac conductivity of As$_{10}$Ge$_{15}$ Te$_{75}$ thin film is much higher than below frequency and independent of temperature and frequency. If the dc voltages are applied between edges of thin film, one can see the dc memory switching phenomenon, in other words the dc conductivity increases quite a few of magnitude after the threshold voltage is applied. Using the stable ac conductivity at high frequency and the increase of conductivity after dc memory switching, As$_{10}$Ge$_{15}$ Te$_{75}$thin film is considered as new material for microwave switch devices.vices.es.vices.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.52 no.4
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• pp.154-160
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• 2003

The switched reluctance motor(SRM) has a considerable potential for industrial applications because of its high reliability as a result of the absence of rotor windings. In some applications with SRM, a parallel switching strategy is often used for cost saving, increasing of current capacity and system reliability. This paper proposes a new parallel switching strategy of SRM using parallel winding. While conventional parallel switching devices are connected in a phase winding, power devices are connected in the parallel windings wound in each pole of stator in the proposed method. Paralleling strategy for current sharing in the proposed method can be easily determined without considerations of any nonlinear characteristics of power devices such as conduction resistance, threshold voltage and gain factor. The proposed paralleling strategy is verified by the mathematical analysis and experimental results.

• The Transactions of the Korean Institute of Electrical Engineers A
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• v.52 no.4
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• pp.154-154
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• 2003

The switched reluctance motor(SRM) has a considerable potential for industrial applications because of its high reliability as a result of the absence of rotor windings. In some applications with SRM, a parallel switching strategy is often used for cost saving, increasing of current capacity and system reliability. This paper proposes a new parallel switching strategy of SRM using parallel winding. While conventional parallel switching devices are connected in a phase winding, power devices are connected in the parallel windings wound in each pole of stator in the proposed method. Paralleling strategy for current sharing in the proposed method can be easily determined without considerations of any nonlinear characteristics of power devices such as conduction resistance, threshold voltage and gain factor. The proposed paralleling strategy is verified by the mathematical analysis and experimental results.

• The Transactions of the Korea Information Processing Society
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• v.7 no.11S
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• pp.3684-3693
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• 2000

In this paper, performance of a nonblocking high speed packet switch with switching capacity m which adopts a dynamic priority control function (DPCF) of a threshold- based Bernoulli priority jump (TBPJ) scheme is considered. Each input queue has two separate buffers with different sizes for two classes of traffics, delay-sensitive and loss-sensitive traffics, and adopts a TBPJ scheme that is a general state-dependent Bernoulli scheduling scheme. Under the TBP] scheme, a head packet of the delay-sensitive traffic buffer goes into the loss -sensitive traffic buffer with Hernoulli probability p according to systems states that represent the buffer thresholds and the number of packets waiting for scheduling. Performance analysis shows that TBPJ scheme obtains large performance build-up for the delay-sensitive traffic without performance degradation for the loss-sensitive traffic. In addition to, TBP] scheme shows better performance than that of HOL scheme.

• Journal of Communications and Networks
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• v.16 no.1
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• pp.56-66
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• 2014

We propose a novel opportunistic access scheme for cognitive radios in an interweave cognitive system, that considers the channel gain as well as the predicted idle channel probability (primary user occupancy: Busy/idle). In contrast to previous work where a cognitive user vacates a channel only when that channel becomes busy, the proposed scheme requires the cognitive user to switch to the channel with the next highest idle probability if the current channel's gain is below a certain threshold. We derive the threshold values that maximize the long term throughput for various primary user transition probabilities and cognitive user's relative movement.