• Journal of Magnetics
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• v.6 no.4
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• pp.132-141
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• 2001

The switching characteristics and the magnetization-flop behavior in magnetic tunnel junctions exchange biased by synthetic antiferromagnets (SyAFs) are investigated by using a computer simulations based on a single-domain multilayer model. The bias field acting on the free layer is found to be sensitive to the thickness of neighboring layers, and the thickness dependence of the bias field is greater at smaller cell dimensions due to larger magnetostatic interactions. The resistance to magnetization flop increases with decreasing cell size due to increased shape anisotropy. When the cell dimensions are small and the synthetic antiferromagnet is weakly, or not pinned, the magnetization directions of the two layers sandwiching the insulating layer are aligned antiparallel due to a strong magnetostatic interaction, resulting in an abnormal magneto resistance (MR) change from the high-MR state to zero, irrespective of the direction of the free-layer switching. The threshold field for magnetization-flop is found to increase linearly with increasing antiferromagnetic exchange coupling in the synthetic antiferromagnet. Irrespective of the magnetic parameters and cell sizes, magnetization flop does not exist near zero applied field, indicating that magnetization flop is driven by the Zeeman energy.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.911-913
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• 2008

In this work, nonvolatile memory (NVM) devices for system on panel of flat panel display (FPD) were fabricated using low temperature polycrystalline silicon (LTPS) thin film transistor (TFT) technology with an oxide-nitride-oxynitride (ONOn) stack structure on glass. The results demonstrate that the NVM devices fabricated using the ONOn stack structure on glass have suitable switching characteristics for data storage with a low operating voltage, a threshold voltage window of more than 1.8 V between the programming and erasing (P/E) states after 10 years and its initial threshold voltage window (${\Delta}V_{TH}$) after $10^5$ P/E cycles.

• Journal of the Korean Institute of Telematics and Electronics S
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• v.34S no.1
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• pp.36-42
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• 1997

This paper proposes a high-speed contention resolution scheme featuring high flexibility to the bursty traffic for an input buffering ATM switching architecture and its hardware strategy. The scheme is based on the threshold on the occupancy of the input buffer. As the proposed scheme utilizes the threshold, it has high flexibility to the fluctuations of the input traffic. The hardware strategy for the proposed policy is provided with the aim of the simple structure that achieves the reduction of the signal path and the power consumption. The performance on the average buffer size of the proposed policy is performed and compared with the conventional schame under the bursty traffic through both the analysis based on the markov hain and the simulation. The relations among the parameters on the proposed policy is analyzed to improve the performance.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.595-599
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• 2003

We have studied the phase transition to look for molecular structure by using several different techniques for new banana-shaped liquid crystals shown in Fig. 1. Based on the similarities to recently observed fluro-contaning materials (switching involves layer structure rearrangement, increasing threshold with increasing temperature) for HC sample (where x is H), we assume that the phase C has a triclinic symmetry corresponding to the double tilted $smC_G$ Phase. The observation that the polarization peak appears at lower field ($E_o{\sim}15V/{\mu}m$) than the amplitude of the threshold ($E_{th}$) can be explained assuming a field induced $SmC_G$ - SmCP (or SmAP) transition at $E_{th}$

• Proceedings of the Optical Society of Korea Conference
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• 2004.07a
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• pp.26-27
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• 2004

We present the first demonstration of the vertical-injection depleted optical thyristor laster diode with InGaAs/InGaAsP multiple quantum well structure. The measured switching voltage and current are 3.36 V and 10 A respectively. The holding voltage and current are respectively 1.37 V, 100 A. The lasing threshold current is 131 mA at 25 C. The output peak wavelength is at 1578 nm at a bias current equal to 1.22 times threshold.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.300-300
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• 2012

프로그래머블 스위치는 프로그래머블 로직 디바이스 내에서 사용자의 프로그래밍에 따라 로직 블록과 배선을 연결하거나 차단하는 기능을 수행하는 전자소자이다. 기존의 프로그래머블 스위치는 상변화 특성을 보이는 칼코겐화물을 이용하는데, 상변화 재료만을 이용하는 스위치는 전기신호 누설의 문제점을 가지고 있다. 이러한 문제점을 해결하기 위하여 본 연구에서는 프로그래머블 스위치의 활성물질로서 상변화 재료 및 문턱(threshold) 스위칭 특성을 보이는 칼코겐화물을 포함하는 다층구조를 제안하고, 다층구조에 적용 가능한 칼코겐화물 합금 특성을 보고한다. RF magnetron sputtering 방식을 이용하여 doped GeSbTe 박막을 증착하고 온도에 따른 면저항 및 표면 형상 변화를 관찰하였다. Doped GeSbTe는 기존의 GeSbTe 상변화 재료와는 뚜렷하게 구분되는 면 저항 및 표면 형상 변화를 나타내었다. 이러한 결과로부터 doped GeSbTe 합금 박막은 다층구조 프로그래머블 스위치의 활성물질로 사용이 가능하다는 사실을 확인할 수 있었다.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.7
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• pp.69-76
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• 1995

A new device structure has been developed for p-i-n switches. In this structure, the phosphorus-diffused n$^{+}$ layter adjacent to the boron-doped anode is used to short the p$^{+}$ anode-channel(i-region). This change in the anode electrode structure results in a significant improvement in the threshold voltage-to-holding voltage($V_{Th}/V_{h}$) ratio, which is due to the suppression of the hold injection from the anode by the n$^{+}$ layer. The shorted anode p-i-n devices of a 100 .mu.m channel length show an extremely high threshold voltage in the 250~300 V range and a low holding voltage in the 5~9 V range. These features of the device are expected to acdelerate their practical application to power switching circuits.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.2
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• pp.163-168
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• 2014

Bottom gate thin-film transistors were fabricated using solution processed IGZO channel layers with various gallium composition ratios that were annealed on a hot plate. Increasing the gallium ratio from 0.1 to 0.6 induced a threshold voltage shift in the electrical characteristics, whereas the molar ratio of In:Zn was fixed to 1:1. Among the devices, the IGZO-TFTs with gallium ratios of 0.4 and 0.5 exhibited suitable switching characteristics with low off-current and low SS values. The IGZO-TFTs prepared from IGZO films with a gallium ratio of 0.4 showed a mobility, on/off current ratio, threshold voltage, and subthreshold swing value of $0.1135cm^2/V{\cdot}s$, ${\sim}10^6$, 0.8 V, and 0.69 V/dec, respectively. IGZO-TFTs annealed at $300^{\circ}C$, $350^{\circ}C$, and $400^{\circ}C$ were also fabricated. Annealing at lower temperatures induced a positive shift in the threshold voltage and produced inferior electrical properties.

• Korean Journal of Optics and Photonics
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• v.10 no.6
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• pp.487-493
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• 1999

In this paper, we studied the characteristics of a soliton coupler using a bent nonlinear waveguide. The bent soliton coupler has very ,harp switching characteristic like the conventional soliton coupler due to the threshold effect of soliton emi,sion from the nonlinear waveguide. By using the bent structure, we can reduce the threshold power for the soliton emission. We consider the saturation effect of nonlinearity and the loss in the medium for more accurate and practical numerical analysis in wave propagation through the bent soliton coupler. The simulation results show that the consideration of the saturation effect and the ]os~ may be very important in the analyses and design of the nonlinear waveguide devices. The bent structure is useful for the emission of the spatial soliton with the low threshold power, when we consider the saturation and the loss effect. ffect.

• Journal of Institute of Control, Robotics and Systems
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• v.18 no.4
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• pp.371-374
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• 2012

DC/DC switching power converters produce DC output voltages from different stable DC input sources regulated by a bi-polar transistor. The converters can be used in regenerative braking of DC motors to return energy back in the supply, resulting in energy savings for the systems containing frequent stops. The voltage mode DC/DC converter is composed of a PWM (Pulse Width Modulation) controller, a MOSFET (Metal Oxide Semiconductor Field Effect Transistor), an inductor, and capacitors, etc. PWM is applied to control and regulate the total output voltage. It is shown that the output of DC/DC converter depends on the variation of threshold voltage at MOSFET and the variation of pulse width. In the PWM operation, the missing pulses, the changes in pulse width, and a change in the period of the output waveform are studied by SPICE (Simulation Program with Integrated Circuit Emphasis) and experiments.