• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.280-281
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• 2011

We fabricated the devices of TFT type with the amorphous chalcogenide channel. A single device consists of a Pt source and drain, a Ti glue layer and a GeSe chalcogenide channel layer on SiO2/Si substrate which worked as the gate. We confirmed the drain current with variations of gate bias and channel size. The I-V curves of the switching device are shown in Fig. 1. The channel of the device always contains amorphous state, but can be programmed into two states with different threshold voltages (Vth). In each state, the device shows a normal Ovonic switching behavior. Below Vth (OFF state), the current is low, but once the biasing voltage is greater than Vth (ON state), the current increases dramatically and the ON-OFF ratio is about 4 order. Based on the experiments, we contained the conclusion that the gate voltage can enhance the drain current, and the electric field by the drain voltage affects the amorphous-amorphous transition. The switching device always contains the amorphous state and never exhibits the Ohmic behavior of the crystalline state.

• Journal of the Korean Institute of Telematics and Electronics B
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• v.33B no.10
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• pp.148-156
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• 1996

Increasing the switching frquency is essential to achieve the high density of switched mode power supplies, but this leads to the increase of switching losses. A number of new soft switching converters have been presented ot reduce switching losses, but most of them may have some demerits, such as the increase of voltage/current stresses and high conduction losses. To overcome these problems, the ZVT-PWM converter has recently been presented. in this paper, the operation characteristics of the ZVT-PWM boost converter is analyzed, and the steady-states (DC) and small-signal model of this converter are derived and analyzed, and then the transfer functions of this converter are derived. The transfer functions of ZVT-PWM boost converter are similar to those of the conventional PWM boost converter, but the transfer characteristics are affecsted by te duty ratio and the switching frequency.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.8
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• pp.902-913
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• 1992

There have been several control schemes for the single input systems with unmeasurable state variables using variable structure control(VSC) theory. In the previous VSC, the systems must be represented in phase canonical form and the complete measurements for each state variable must be assumed. In order to eliminate these restrictions several VSC methods were proposed. And especially for the systems in phase canonical form with unmeasurable state variables, the reduced order switching function algorithm was proposed. But this method has many drawbacks and can not be used in the case of general form (not phase canonical form) dynamic system. Therefore this paper propose new construction method of switching fuction for the systems in phase canonical form, which reduce the restriction of reduced order switching function algorithm. And this algorithm can be realized for any state representation and adopted in the systems where not all states are available for switching function synthesis or control.

• International journal of advanced smart convergence
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• v.8 no.4
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• pp.138-146
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• 2019

In this paper, we proposed a soft-switched synchronous buck converter, which can perform charging the battery. The proposed converter has low switching loss even at high frequency operation due to its soft switching characteristics. The converter operates in synchronous mode to minimize conduction loss, resulting in small conduction loss, also. In this reason, the efficiency of the converter can be greatly improved even in high frequency. The size and weight of the converter can be reduced by high frequency operation of the converter. In this paper, we designed a battery charger with a switching frequency of 100 kHz. The designed converter also simulated to prove the converter's characteristics of synchronous operation as well as soft switching operation. The simulation shows that the proposed converter always meets the soft switching conditions of turning on and off switching in the zero voltage and zero current states. Therefore, simulation results have confirmed that the proposed battery charger had soft switching characteristics. The simulation results for transient response to charge current for the designed converter show that the converter responds to charge current commands quickly within 0.05 ms.

• Korean Journal of Materials Research
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• v.25 no.9
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• pp.429-434
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• 2015

Resistance switching memory cells were fabricated using atomically dispersed Pt-$SiO_2$ thin film prepared via RF co-sputtering. The memory cell can switch between a low-resistance-state and a high-resistance-state reversibly and reproducibly through applying alternate voltage polarities. Percolated conducting paths are the origin of the low-resistance-state, while trapping electrons in the negative U-center in the Pt-$SiO_2$ interface cause the high-resistance-state. Intermediate resistance-states are obtained through controlling the compliance current, which can be applied to multi-level operation for high memory density. It is found that the resistance value is related to the capacitance of the memory cell: a 265-fold increase in resistance induces a 2.68-fold increase in capacitance. The exponential growth model of the conducting paths can explain the quantitative relationship of resistance-capacitance. The model states that the conducting path generated in the early stage requires a larger area than that generated in the last stage, which results in a larger decrease in the capacitance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.6
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• pp.436-439
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• 2010

SiC power device possesses attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation. In general, device design has a significant effect on the switching characteristics. In this work, we report the effect of the interface states ($Q_f$) on the transient characteristics of SiC DMOSFETs. The key design parameters for SiC DMOSFETs have been optimized by using a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. When the $SiO_2$/SiC interface charge decreases, power losses and switching time also decrease, primarily due to the lowered channel mobilities. High density interface states can result in increased carrier trapping, or more recombination centers or scattering sites. Therefore, the quality of $SiO_2$/SiC interfaces has a important effect on both the static and transient properties of SiC MOSFET devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.207.1-207.1
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• 2013

Tantalum oxide has been extensively investigated as one of the promising Resistive switching materials applicable to Resistive Dynamic Access Memories. Impedance spectroscopy offers simultaneous measurements of electrical and dielectric information, separation of electrical origins among bulk, grain boundaries, and interfaces, and the monitoring of electrical components. Such benefits have been combined with the resistive states of resistive switching devices which can be described in terms of equivalent circuits involving resistors, capacitors, and inductors, The current work employed pulsed laser deposition in order to prepare the oxygen-deficient tantalum oxide. The fabricated devices were controlled between highresistance and low-resistance states in controlled current compliance modes. The corresponding electrical phenomena were monitored both in the dc-based current-voltage characteristics and in the ac-based impedance spectroscopy. The origins of the electrical switching are discussed towards optimized ReRAM devices in terms of interfacial effects.

• Journal of Power Electronics
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• v.19 no.1
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• pp.244-253
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• 2019

Finite control set model-predictive control (FCS-MPC) has received increasing attentions due to its outstanding dynamic performance. It is being widely used in power converters and multilevel inverters. However, FCS-MPC requires a lot of calculations, especially for multilevel-cascaded H-bridge (CHB) static synchronous compensators (STATCOMs), since it has to take account of all the feasible voltage vectors of inverters. Hence, an improved five-segment space vector pulse width modulation (SVPWM) method based on the non-orthogonal static reference frames is proposed. The proposed SVPWM method has a lower number of switching states and requires fewer computations than the conventional method. As a result, it makes FCS-MPC more efficient for multilevel cascaded H-bridge STATCOMs. The partial cost function is adopted to sequentially solve for the reference current and capacitor voltage. The proposed FCS-MPC method can reduce the calculation burden of the FCS-MPC strategy, and reduce both the switching frequency and power losses. Simulation and experimental results validate the excellent performance of the proposed method when compared with the conventional approach.

• Journal of Magnetics
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• v.16 no.4
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• pp.328-331
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• 2011

Here, we describe a dual spin valve structure with distinct switching fields for two pinned layers. A device with this structure has a staircase of three distinct magnetoresistive states. The multiple resistance states are achieved by controlling the exchange coupling between two ferromagnetic pinned layers and two adjacent anti-ferromagnetic pinning layers. The maximum magnetoresistance ratio is 7.9% for the current-perpendicular-to-plane and 7.2% for the current-in-plane geometries, with intermediate magnetoresistance ratios of 3.9% and 3.3%, respectively. The requirements for using this exchange-biased stack as a three-state memory device are also discussed.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.502-504
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• 2009

We demonstrate a pixel-isolated bistable twist-splay namatic (PI-BTSN) liquid crystal (LC) cell which has two stable states of splay and ${\pi}$-twist. Each state is stabilized by a multi-dimensional anchoring effect of pixel-isolating polymer walls without any chiral additives. Polymer walls are formed around the pixel region by anisotropic phase separation between LCs and reactive mesogens. Switching between the two states is archived by using vertical and horizontal electric fields. The memory mode of the fabricated LC cell has shown infinity memory time.